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    • 1. 发明授权
    • Optical wiring substrate fabrication process and optical wiring substrate device
    • 光布线基板制造工艺和光布线基板装置
    • US07197201B2
    • 2007-03-27
    • US10456965
    • 2003-06-09
    • Daisuke NakayaTakeshi FujiiYoji OkazakiKazuhiko NaganoHiromi Ishikawa
    • Daisuke NakayaTakeshi FujiiYoji OkazakiKazuhiko NaganoHiromi Ishikawa
    • G02B6/12
    • G03F7/7005G02B6/136G02B6/138G02B2006/12104G03F7/70291G03F7/70391
    • An optical wiring substrate fabrication method capable of simple formation, by maskless exposure, of an inclined face shape at an end portion of a core layer structuring an optical waveguide. Using an exposure apparatus, image exposure is carried out with a light beam which is modulated by a spatial modulation element in accordance with image information. A predetermined area of a photosensitive material (a photoresist), which is coated on the core layer which is a material of the optical wiring substrate, is exposed by a light beam (UV) and patterned to form an etching mask. A region corresponding to the inclined face, which is to be formed at the end portion of the core layer, is exposed and patterned by the light beam, exposure amounts of which are controlled in accordance with the inclined form of the inclined face, such that an end portion of the etching mask has an inclined face structure. When the core layer is worked by etching using this etching mask, working of the core layer at the end portion of the core layer progresses in proportion to film thickness of the etching mask, and the inclined face is formed.
    • 一种光学布线基板的制造方法,其能够通过无掩模地曝光在构成光波导的芯层的端部处形成倾斜的表面形状。 使用曝光装置,利用由空间调制元件根据图像信息调制的光束进行图像曝光。 通过光束(UV)对作为光布线基板的材料的芯层上涂布的感光材料(光致抗蚀剂)的预定区域进行曝光并图案化以形成蚀刻掩模。 对应于要形成在芯层的端部的倾斜面的区域被光束曝光和图案化,其曝光量根据倾斜面的倾斜形式被控制,使得 蚀刻掩模的端部具有倾斜面结构。 当通过使用该蚀刻掩模的蚀刻加工芯层时,芯层的端部的芯层的加工与蚀刻掩模的膜厚度成比例地进行,并且形成倾斜面。
    • 7. 发明授权
    • Laser module
    • 激光模块
    • US07301975B2
    • 2007-11-27
    • US10954244
    • 2004-10-01
    • Teruhiko KuramachiFusao YamanakaKazuhiko NaganoYoji Okazaki
    • Teruhiko KuramachiFusao YamanakaKazuhiko NaganoYoji Okazaki
    • H01S3/04
    • G02B6/4206G02B6/4248
    • In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350˜450 nm, generation of organic volatile gas is suppressed in the container and life of the module is prolonged. In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350˜450 nm and whose life is 5500 hours or more, optical components whose organic volatile gas generation measured by GC/MS is 10 μg/g or less at 150° C. are positioned in the container. In addition, as an organic adhesive to fix the optical components such as a collimating lens is used an organic adhesive whose organic volatile gas generation measured by GC/MS is 300 μg/g or less at 15° C.
    • 在包含发光波长为350〜450nm的半导体激光装置的内部的气密密封容器的激光模块中,在容器中抑制有机挥发性气体的产生,延长了模块的使用寿命。 在发光波长为350〜450nm,寿命为5500小时以上的半导体激光装置的内部的气密密封容器的激光组件中,通过GC / MS测定的有机挥发性气体产生量为10mug / g, 在150℃下较少位于容器中。 此外,作为用于固定准直透镜等光学部件的有机粘合剂,使用通过GC / MS测定的有机挥发性气体产生在15℃下为300mug / g以下的有机粘合剂。
    • 9. 发明授权
    • Exposure head
    • 曝光头
    • US07061517B2
    • 2006-06-13
    • US11124058
    • 2005-05-09
    • Hiromi IshikawaYoji OkazakiKazuhiko Nagano
    • Hiromi IshikawaYoji OkazakiKazuhiko Nagano
    • B41J2/47G02F1/295
    • G03F7/70291G02B26/0841G03F7/7005
    • In the present invention provides, in order to obtain a desired focal depth t in a range α of an acceptable increased amount of beam diameter, an exposure head is designed so that the ratio D/W of an output beam width D to a beam width W at the position where a DMD is placed satisfies the following relational formula. D W ≤ α × M 2 × t - K × λ a θ In the above formula, parameters are defined as follows. λ: the wavelength of laser light θ: the angle of beam outputted from an illumination light source that is derived by a numerical aperture (NA) of optical fiber according to the following formula θ=sin−1(NA) D: the width of beam outputted from the illumination light source W: the beam width at the position where the DMD is placed (at the irradiated surface) a: the size of one pixel on the DMD K: a coefficient determined by beam characteristics, K=1 M: the magnification of imaging optical system t: required focal depth α: acceptable increased amount of beam diameter
    • 在本发明中,为了获得可接受的增加光束直径的α的范围内的所需焦点深度t,曝光头被设计成使得输出光束宽度D的比D / W与光束宽度 放置DMD的位置的W满足以下关系式。 D W 2 - /> > 在上述公式中,参数定义如下。 λ:激光的波长θ:根据以下公式由光纤的数值孔径(NA)导出的照明光源输出的光束的角度<?in-line-formula description =“In-line 公式“end =”lead“?> theta = sin (NA)<?in-line-formula description =”In-line Formulas“end =”tail“?> D: 从照明光源W输出的光束:DMD放置位置处的光束宽度(照射面)a:DMD上的一个像素的大小K:由光束特性确定的系数,K = 1M :成像光学系统的放大倍数t:所需的焦深α:可接受的增加光束直径的数量