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1. 发明授权

US07927967B2 Method for manufacturing semiconductor memory device 有权
标题翻译：制造半导体存储器件的方法
公开(公告)号：US07927967B2
公开(公告)日：2011-04-19
申请号：US12608903
申请日：2009-10-29
申请人： Kayo Nomura , Hideto Matsuyama
发明人： Kayo Nomura , Hideto Matsuyama
IPC分类号： H01L21/76
CPC分类号： H01L27/11578 , H01L27/11575 , H01L27/11582
摘要： A method for manufacturing a semiconductor memory device, includes: forming a stacked unit above a semiconductor substrate; making a hole in the stacked unit to pass through electrode layers and insulating layers of the stacked unit; forming an insulating film on a side wall of the hole, the insulating film including a charge storage layer; forming a semiconductor layer in an interior of the hole to align in a stacking direction of the electrode layers and the insulating layers to form a memory string; making a trench in a portion of the stacked unit proximal to the memory string to pass through the electrode layers and the insulating layers; forming a metal film on a side wall of the trench; forming a cap film to cover the metal film and fill into the trench; performing heat treatment to form a compound on the side wall of the trench.
摘要翻译：一种半导体存储器件的制造方法，包括：在半导体衬底上形成堆叠单元; 在堆叠单元中形成孔，以通过层叠单元的电极层和绝缘层; 在所述孔的侧壁上形成绝缘膜，所述绝缘膜包括电荷存储层; 在所述孔的内部形成半导体层，以在电极层和绝缘层的堆叠方向上对准以形成存储器串; 在靠近存储器串的层叠单元的一部分中形成沟槽，以穿过电极层和绝缘层; 在沟槽的侧壁上形成金属膜; 形成盖膜以覆盖金属膜并填充到沟槽中; 进行热处理以在沟槽的侧壁上形成化合物。

2. 发明申请

US20100144133A1 METHOD FOR MANUFACTURING SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：制造半导体存储器件的方法
公开(公告)号：US20100144133A1
公开(公告)日：2010-06-10
申请号：US12608903
申请日：2009-10-29
申请人： Kayo NOMURA , Hideto Matsuyama
发明人： Kayo NOMURA , Hideto Matsuyama
IPC分类号： H01L21/8239
CPC分类号： H01L27/11578 , H01L27/11575 , H01L27/11582
摘要： A method for manufacturing a semiconductor memory device, includes: forming a stacked unit above a semiconductor substrate, the stacked unit including a plurality of insulating layers alternately stacked with a plurality of electrode layers, the electrode layers being formed of a semiconductor; making a hole in the stacked unit to pass through the electrode layers and the insulating layers; forming an insulating film on a side wall of the hole, the insulating film including a charge storage layer; forming a semiconductor layer in an interior of the hole to align in a stacking direction of the electrode layers and the insulating layers to form a memory string by multiply connecting memory cells in the stacking direction, the memory cell including the electrode layer, the charge storage layer opposing the electrode layer, and the semiconductor layer opposing the charge storage layer; making a trench in a portion of the stacked unit proximal to the memory string to pass through the electrode layers and the insulating layers; forming a metal film on a side wall of the trench; forming a cap film to cover the metal film and fill into the trench; performing heat treatment in the state where the cap film is filled into the trench to cause the metal film to react with the semiconductor of the electrode layers and form a compound between the semiconductor and the metal film at portions of the electrode layers contacting the metal film; removing the cap film and an unreacted excess portion of the metal film; and providing a dielectric substance in the trench after the cap film and the unreacted excess portion are removed.
摘要翻译：一种制造半导体存储器件的方法，包括：在半导体衬底上形成层叠单元，所述层叠单元包括交替层叠有多个电极层的多个绝缘层，所述电极层由半导体形成; 在堆叠单元中形成孔以穿过电极层和绝缘层; 在所述孔的侧壁上形成绝缘膜，所述绝缘膜包括电荷存储层; 在所述孔的内部形成半导体层，以在所述电极层和所述绝缘层的堆叠方向上排列，以通过沿堆叠方向乘以连接存储单元形成存储串，所述存储单元包括所述电极层，所述电荷存储与电极层相对的层，以及与电荷存储层相对的半导体层。在靠近存储器串的层叠单元的一部分中形成沟槽，以穿过电极层和绝缘层; 在沟槽的侧壁上形成金属膜; 形成盖膜以覆盖金属膜并填充到沟槽中; 在将盖膜填充到沟槽中的状态下进行热处理，使得金属膜与电极层的半导体反应，并且在与金属膜接触的电极层的部分处形成半导体与金属膜之间的化合物 ; 去除所述盖膜和所述金属膜的未反应的多余部分; 并且在除去盖膜和未反应的过量部分之后在沟槽中提供电介质。

3. 发明申请

US20090020883A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于制造半导体器件的半导体器件和方法
公开(公告)号：US20090020883A1
公开(公告)日：2009-01-22
申请号：US12175132
申请日：2008-07-17
申请人： Kayo Nomura , Junichi Wada , Hideto Matsuyama , Masayuki Kitamura
发明人： Kayo Nomura , Junichi Wada , Hideto Matsuyama , Masayuki Kitamura
IPC分类号： H01L23/48 , H01L21/44
CPC分类号： H01L21/76877 , H01L21/76831 , H01L21/76843 , H01L21/76855 , H01L21/76867 , H01L21/76873 , H01L23/485 , H01L23/53223 , H01L23/53238 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a first contact plug arranged above a semiconductor substrate and using aluminum (Al) as a material; a second contact plug arranged on and in contact with the first contact plug and using a refractory metal material; a first dielectric film arranged on a flank side of the first and second contact plugs; a wire arranged above the second contact plug and using copper (Cu) as a material; a second dielectric film arranged on a flank side of the wire; and a barrier film arranged at least between the wire and the first dielectric film and between the wire and the second dielectric film.
摘要翻译：半导体器件包括布置在半导体衬底之上并使用铝（Al）作为材料的第一接触插塞; 布置在第一接触插塞上并与第一接触插塞接触并使用难熔金属材料的第二接触插塞; 布置在第一和第二接触插塞的侧面上的第一电介质膜; 布置在第二接触塞上方并使用铜（Cu）作为材料的导线; 布置在所述导线的侧面侧的第二电介质膜; 以及阻挡膜，其至少布置在所述线和所述第一电介质膜之间以及所述线与所述第二电介质膜之间。

4. 发明授权

US09511529B2 Deformed porous hollow fiber membrane, production method of deformed porous hollow fiber membrane, and module, filtration device, and water treatment method in which deformed porous hollow fiber membrane is used 有权
标题翻译：变形多孔中空纤维膜，变形多孔中空纤维膜的制造方法，模块，过滤装置以及使用变形的多孔中空纤维膜的水处理方法
公开(公告)号：US09511529B2
公开(公告)日：2016-12-06
申请号：US13382039
申请日：2010-08-13
申请人： Hirokazu Fujimura , Masatoshi Hashino , Noboru Kubota , Hideto Matsuyama
发明人： Hirokazu Fujimura , Masatoshi Hashino , Noboru Kubota , Hideto Matsuyama
IPC分类号： B01D69/08 , B01D71/26 , B01D71/34 , B01D67/00 , B29C47/00 , B29K27/00 , B29L23/00
CPC分类号： B29C47/0023 , B01D67/0002 , B01D69/08 , B01D69/082 , B01D69/085 , B01D69/087 , B01D71/26 , B01D71/34 , B01D2313/10 , B01D2313/26 , B01D2323/02 , B01D2323/08 , B01D2323/42 , B29K2027/16 , B29L2023/003
摘要： A porous hollow fiber membrane that is suitable for treatment of liquid containing an inorganic substance and/or an organic substance, is obtained at a low cost performance, and has high water permeability performance, fretting resistance, and drying resistance. A deformed porous hollow fiber membrane according to the present invention is composed of a thermoplastic resin and includes a continuous asperity provided on the periphery in the longitudinal direction of the membrane, in which the periphery of the hollow fiber membrane in the circumferential direction includes continuous projected and depressed parts.
摘要翻译：以低成本的性能获得适用于处理含有无机物和/或有机物质的液体的多孔中空纤维膜，具有高透水性，耐磨性和耐干燥性。根据本发明的变形的多孔中空纤维膜由热塑性树脂组成，并且在膜的纵向周围设置有连续的凹凸，其中中空纤维膜的周向在周向上包括连续突出的和沮丧的部分。

5. 发明申请

US20120219718A1 CO2-FACILITATED TRANSPORT MEMBRANE AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：二氧化碳促进运输膜及其生产方法
公开(公告)号：US20120219718A1
公开(公告)日：2012-08-30
申请号：US13462549
申请日：2012-05-02
申请人： Osamu Okada , Masaaki Teramoto , Reza Yegani , Hideto Matsuyama , Keiko Shimada , Kaori Morimoto
发明人： Osamu Okada , Masaaki Teramoto , Reza Yegani , Hideto Matsuyama , Keiko Shimada , Kaori Morimoto
IPC分类号： B05D3/10 , B05D3/02
CPC分类号： B01J19/2475 , B01D69/10 , B01D69/12 , B01D71/38 , B01D71/40 , B01D71/76 , B01D2325/20 , C01B3/16 , C01B2203/041 , C01B2203/0475 , C01B2203/066 , H01M8/0668 , H01M8/0687 , Y02C10/04 , Y02P70/56
摘要： A CO2-facilitated transport membrane of excellent carbon dioxide permeability and CO2/H2 selectivity, which can be applied to a CO2 permeable membrane reactor, is stably provided. The CO2-facilitated transport membrane is formed such that a gel layer 1 obtained by adding cesium carbonate to a polyvinyl alcohol-polyacrylic acid copolymer gel membrane is supported by a hydrophilic porous membrane 2. More preferably, a gel layer supported by a hydrophilic porous membrane 2 is coated with hydrophilic porous membranes 3 and 4.
摘要翻译：稳定地提供了可应用于二氧化碳可渗透膜反应器的具有优异的二氧化碳渗透性和CO 2 / H 2选择性的CO 2促进输送膜。形成CO 2促进输送膜，使得通过将碳酸铯添加到聚乙烯醇 - 聚丙烯酸共聚物凝胶膜中而获得的凝胶层1由亲水性多孔膜2负载。更优选地，由亲水性多孔膜 2涂覆有亲水性多孔膜3和4。

6. 发明申请

US20100003816A1 Method of manufacturing a semiconductor device from which damage layers and native oxide films in connection holes have been removed 有权
标题翻译：制造半导体器件的方法，其中去除了连接孔中的损伤层和自然氧化膜
公开(公告)号：US20100003816A1
公开(公告)日：2010-01-07
申请号：US12585238
申请日：2009-09-09
申请人： Makoto Honda , Kaori Yomogihara , Kazuhiro Murakami , Masanori Numano , Takahito Nagamatsu , Hideaki Harakawa , Hideto Matsuyama , Hirokazu Ezawa , Hisashi Kaneko
发明人： Makoto Honda , Kaori Yomogihara , Kazuhiro Murakami , Masanori Numano , Takahito Nagamatsu , Hideaki Harakawa , Hideto Matsuyama , Hirokazu Ezawa , Hisashi Kaneko
IPC分类号： H01L21/768
CPC分类号： H01L21/76802 , H01L21/02063 , H01L21/31116 , H01L21/76814
摘要： An insulating film formed on a conducting layer is dry-etched so as to make a connection hole in the insulating film to expose the conducting layer. Plasma is supplied onto the exposed conducting layer to dry-clean a damage layer produced in the connection hole. A product produced in the connection hole as a result of the dry cleaning is removed by a wet process. An oxide film formed in the connection hole as a result of the wet process is etched by a chemical dry process using a gas including either NF3 or HF. A thermally decomposable reaction product produced as a result of the etching is removed by heat treatment.
摘要翻译：对形成在导电层上的绝缘膜进行干蚀刻，以在绝缘膜上形成连接孔，使导电层露出。将等离子体供应到暴露的导电层上以干燥在连接孔中产生的损伤层。作为干式清洗的连接孔中产生的产品通过湿法除去。通过使用包括NF 3或HF的气体的化学干法，蚀刻形成在连接孔中的作为湿法处理的结果的氧化膜。通过热处理除去作为蚀刻结果产生的可热分解的反应产物。

7. 发明授权

US08644891B2 Voice communication apparatus connectable to wireless LAN, radio circuit activation method, and radio circuit activation program 有权
标题翻译：可连接到无线LAN的语音通信装置，无线电电路激活方法和无线电电路激活程序
公开(公告)号：US08644891B2
公开(公告)日：2014-02-04
申请号：US11942345
申请日：2007-11-19
申请人： Fumiaki Matsumoto , Mitsuhiro Sugimori , Hiroshi Tsunoda , Hideto Matsuyama
发明人： Fumiaki Matsumoto , Mitsuhiro Sugimori , Hiroshi Tsunoda , Hideto Matsuyama
IPC分类号： H04M1/00
CPC分类号： H04W52/0274 , H04M2250/06 , H04W88/06 , Y02D70/142 , Y02D70/23
摘要： In order to reduce power consumption while an incoming call is detected by each of a plurality of communication methods, a mobile phone includes a radio circuit, a wireless LAN circuit, and a control portion to control power supply to them. The control portion cuts off power supply to the radio circuit when communication for a call by the wireless LAN circuit is established when power is supplied to both the radio circuit and the wireless LAN circuit.
摘要翻译：为了在通过多种通信方式中的每一种检测到来话呼叫时降低功耗，移动电话包括无线电电路，无线LAN电路和控制部分，以控制对它们的电力供应。当向无线电电路和无线LAN电路供电时，无线LAN电路的呼叫通信建立时，控制部分切断对无线电电路的电源。

8. 发明申请

US20110036237A1 CO2-FACILITATED TRANSPORT MEMBRANE AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：二氧化碳促进运输膜及其生产方法
公开(公告)号：US20110036237A1
公开(公告)日：2011-02-17
申请号：US12864232
申请日：2009-01-22
申请人： Osamu Okada , Masaaki Teramoto , Reza Yegani , Hideto Matsuyama , Keiko Shimada , Kaori Morimoto
发明人： Osamu Okada , Masaaki Teramoto , Reza Yegani , Hideto Matsuyama , Keiko Shimada , Kaori Morimoto
IPC分类号： B01D69/12 , B05D5/00 , B32B38/00 , B01D71/06 , B01D53/22
CPC分类号： B01J19/2475 , B01D69/10 , B01D69/12 , B01D71/38 , B01D71/40 , B01D71/76 , B01D2325/20 , C01B3/16 , C01B2203/041 , C01B2203/0475 , C01B2203/066 , H01M8/0668 , H01M8/0687 , Y02C10/04 , Y02P70/56
摘要： A CO2-facilitated transport membrane of excellent carbon dioxide permeability and CO2/H2 selectivity, which can be applied to a CO2 permeable membrane reactor, is stably provided. The CO2-facilitated transport membrane is formed such that a gel layer 1 obtained by adding cesium carbonate to a polyvinyl alcohol-polyacrylic acid copolymer gel membrane is supported by a hydrophilic porous membrane 2. More preferably, a gel layer supported by a hydrophilic porous membrane 2 is coated with hydrophilic porous membranes 3 and 4.
摘要翻译：稳定地提供了可应用于二氧化碳可渗透膜反应器的具有优异的二氧化碳渗透性和CO 2 / H 2选择性的CO 2促进输送膜。形成CO 2促进输送膜，使得通过将碳酸铯添加到聚乙烯醇 - 聚丙烯酸共聚物凝胶膜中而获得的凝胶层1由亲水性多孔膜2负载。更优选地，由亲水性多孔膜 2涂覆有亲水性多孔膜3和4。

9. 发明授权

US07605076B2 Method of manufacturing a semiconductor device from which damage layers and native oxide films in connection holes have been removed 有权
标题翻译：制造半导体器件的方法，其中去除了连接孔中的损伤层和自然氧化膜
公开(公告)号：US07605076B2
公开(公告)日：2009-10-20
申请号：US11346236
申请日：2006-02-03
申请人： Makoto Honda , Kaori Yomogihara , Kazuhiro Murakami , Masanori Numano , Takahito Nagamatsu , Hideaki Harakawa , Hideto Matsuyama , Hirokazu Ezawa , Hisashi Kaneko
发明人： Makoto Honda , Kaori Yomogihara , Kazuhiro Murakami , Masanori Numano , Takahito Nagamatsu , Hideaki Harakawa , Hideto Matsuyama , Hirokazu Ezawa , Hisashi Kaneko
IPC分类号： H01L21/4763 , H01L21/28 , H01L21/302
CPC分类号： H01L21/76802 , H01L21/02063 , H01L21/31116 , H01L21/76814
摘要： An insulating film formed on a conducting layer is dry-etched so as to make a connection hole in the insulating film to expose the conducting layer. Plasma is supplied onto the exposed conducting layer to dry-clean a damage layer produced in the connection hole. A product produced in the connection hole as a result of the dry cleaning is removed by a wet process. An oxide film formed in the connection hole as a result of the wet process is etched by a chemical dry process using a gas including either NF3 or HF. A thermally decomposable reaction product produced as a result of the etching is removed by heat treatment.
摘要翻译：对形成在导电层上的绝缘膜进行干蚀刻，以在绝缘膜上形成连接孔，使导电层露出。将等离子体供应到暴露的导电层上以干燥在连接孔中产生的损伤层。作为干式清洗的连接孔中产生的产品通过湿法除去。通过使用包括NF 3或HF的气体的化学干法，蚀刻形成在连接孔中的作为湿法处理的结果的氧化膜。通过热处理除去作为蚀刻结果产生的可热分解的反应产物。

10. 发明授权

US07239359B2 Digital broadcasting receiver 有权
标题翻译：数字广播接收机
公开(公告)号：US07239359B2
公开(公告)日：2007-07-03
申请号：US10303694
申请日：2002-11-26
申请人： Hideto Matsuyama , Eiichi Itani
发明人： Hideto Matsuyama , Eiichi Itani
IPC分类号： H04N5/44
CPC分类号： H04N5/50 , H04N5/4401 , H04N21/4345 , H04N21/4348 , H04N21/4383 , H04N21/4586 , H04N21/485
摘要： A tuner extracts a digital broadcasting wave on a channel tuned in to, and demodulates the extracted digital broadcasting wave, to output a transport stream. A demultiplexer acquires various types of data from the transport stream. A CPU performs channel search processing when the timing of execution previously set has arrived (e.g., 4:00 a.m. on Thursday every week), and performs processing for acquiring channel information included in the digital broadcasting wave and storing, when a new channel is found, for example, channel information related to the new channel in a non-volatile memory.
摘要翻译：调谐器在调谐到的信道上提取数字广播波，并解调所提取的数字广播波，以输出传输流。解复用器从传输流中获取各种类型的数据。当执行先前设定的定时已经到达（例如，周四上午4:00）时，CPU执行信道搜索处理，并且执行用于获取包括在数字广播波中的频道信息的处理，并且当找到新的频道时存储例如，与非易失性存储器中的新频道相关的频道信息。

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