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1. 发明授权

US06849857B2 Beam processing apparatus 有权
标题翻译：梁加工设备
公开(公告)号：US06849857B2
公开(公告)日：2005-02-01
申请号：US10471610
申请日：2002-03-22
申请人： Katsunori Ichiki , Kazuo Yamauchi , Hirokuni Hiyama , Seiji Samukawa
发明人： Katsunori Ichiki , Kazuo Yamauchi , Hirokuni Hiyama , Seiji Samukawa
IPC分类号： H05H1/46 , B01J19/08 , C23C14/32 , H01J37/08 , H01J37/30 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H01J37/00
CPC分类号： H01J37/32137 , H01J37/08 , H01J37/30 , H01J37/32357 , H01J2237/0827
摘要： A beam processing apparatus comprises a workpiece holder (20) for holding a workpiece (X), a plasma generator for generating a plasma in a vacuum chamber (3), first electrode (4) disposed in the vacuum chamber (3), and a second electrode (5) disposed upstream of the first electrode (4) in the vacuum chamber (3). The beam processing apparatus further comprises a voltage applying unit for applying a variable voltage between the first electrode (4) and the second electrode (5) to alternately extract positive ions (6) and negative ions from the plasma generated by the plasma generator.
摘要翻译：光束处理装置包括用于保持工件（X）的工件保持器（20），用于在真空室（3）中产生等离子体的等离子体发生器，设置在真空室（3）中的第一电极（4）第二电极（5），设置在真空室（3）中的第一电极（4）的上游。光束处理装置还包括用于在第一电极（4）和第二电极（5）之间施加可变电压以从等离子体发生器产生的等离子体中交替地提取正离子（6）和负离子的电压施加单元。

2. 发明申请

US20050020070A1 Etching method and apparatus 失效
标题翻译：蚀刻方法和装置
公开(公告)号：US20050020070A1
公开(公告)日：2005-01-27
申请号：US10484502
申请日：2002-09-24
申请人： Katsunori Ichiki , Kazuo Yamauchi , Hirokuni Hiyama , Seiji Samukawa
发明人： Katsunori Ichiki , Kazuo Yamauchi , Hirokuni Hiyama , Seiji Samukawa
IPC分类号： G21K1/00 , G21K5/04 , H01J37/32 , H01L21/00 , H01L21/302 , H01L21/3065 , H01L21/461 , H05H3/02
CPC分类号： H01J37/32357 , H01J37/32422 , H01L21/3065 , H01L21/67069
摘要： An etching apparatus comprises a workpiece holder (21) for holding a workpiece (X), a plasma generator (10, 20) for generating a plasma (30) in a vacuum chamber (3), an orifice electrode (4) disposed between the workpiece holder (21) and the plasma generator (10, 20), and a grid electrode (5) disposed upstream of the orifice electrode (4) in the vacuum chamber (3). The orifice electrode (4) has orifices (4a) defined therein. The etching apparatus further comprises a voltage applying unit (25, 26) for applying a voltage between the orifice electrode (4) and the grid electrode (5) to accelerate ions from the plasma (30) generated by the plasma generator (10, 20) and to pass the extracted ions through the orifices (4a) in the orifice electrode (4), for generating a collimated neutral particle beam having an energy ranging from 10 eV to 50 eV.
摘要翻译：蚀刻装置包括用于保持工件（X）的工件保持器（21），用于在真空室（3）中产生等离子体（30）的等离子体发生器（10,20），设置在真空室工件保持器（21）和等离子体发生器（10,20）以及设置在真空室（3）中的孔电极（4）上游的栅电极（5）。孔口电极（4）具有限定在其中的孔（4a）。蚀刻装置还包括用于在孔电极（4）和栅电极（5）之间施加电压的电压施加单元（25,26），以加速由等离子体发生器（10,20）产生的等离子体（30）的离子并且将提取的离子通过孔口电极（4）中的孔（4a），以产生具有10eV至50eV的能量的准直中性粒子束。

3. 发明授权

US07314574B2 Etching method and apparatus 失效
标题翻译：蚀刻方法和装置
公开(公告)号：US07314574B2
公开(公告)日：2008-01-01
申请号：US10484502
申请日：2002-09-24
申请人： Katsunori Ichiki , Kazuo Yamauchi , Hirokuni Hiyama , Seiji Samukawa
发明人： Katsunori Ichiki , Kazuo Yamauchi , Hirokuni Hiyama , Seiji Samukawa
IPC分类号： B44C1/22 , H01L21/00
CPC分类号： H01J37/32357 , H01J37/32422 , H01L21/3065 , H01L21/67069
摘要： An etching apparatus comprises a workpiece holder (21) for holding a workpiece (X), a plasma generator (10, 20) for generating a plasma (30) in a vacuum chamber (3), an orifice electrode (4) disposed between the workpiece holder (21) and the plasma generator (10, 20), and a grid electrode (5) disposed upstream of the orifice electrode (4) in the vacuum chamber (3). The orifice electrode (4) has orifices (4a) defined therein. The etching apparatus further comprises a voltage applying unit (25, 26) for applying a voltage between the orifice electrode (4) and the grid electrode (5) to accelerate ions from the plasma (30) generated by the plasma generator (10, 20) and to pass the extracted ions through the orifices (4a) in the orifice electrode (4), for generating a collimated neutral particle beam having an energy ranging from 10 eV to 50 eV.
摘要翻译：蚀刻装置包括用于保持工件（X）的工件保持器（21），用于在真空室（3）中产生等离子体（30）的等离子体发生器（10,20），设置在真空室工件保持器（21）和等离子体发生器（10,20）以及设置在真空室（3）中的孔电极（4）上游的栅电极（5）。孔口电极（4）具有限定在其中的孔（4a）。蚀刻装置还包括用于在孔电极（4）和栅电极（5）之间施加电压的电压施加单元（25,26），以加速由等离子体发生器（10,20）产生的等离子体（30）的离子并且将提取的离子通过孔口电极（4）中的孔（4a），以产生具有10eV至50eV的能量的准直中性粒子束。

4. 发明授权

US06909087B2 Method of processing a surface of a workpiece 失效
标题翻译：加工工件表面的方法
公开(公告)号：US06909087B2
公开(公告)日：2005-06-21
申请号：US10471743
申请日：2002-03-22
申请人： Katsunori Ichiki , Kazuo Yamauchi , Hirokuni Hiyama , Seiji Samukawa
发明人： Katsunori Ichiki , Kazuo Yamauchi , Hirokuni Hiyama , Seiji Samukawa
IPC分类号： B23K15/00 , B23K101/40 , H01J37/317 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/31 , H05H1/46 , H01L21/306 , H05H3/00
CPC分类号： H01J37/32082 , H01J37/317 , H01J37/32357 , H01J37/32706 , H05H1/46
摘要： A plasma generator generates positive ions and negative ions in a plasma. An ion extracting portion (4, 5) selectively extracts the generated positive ions and negative ions from the plasma, and accelerates the extracted ions in a predetermined direction. The positive ions and the negative ions are selectively applied to the workpiece (X). The plasma generator applies a high-frequency voltage to a process gas in a vacuum chamber for generating a plasma which is composed of positive ions and electrons from the process gas, and interrupts the high-frequency voltage for attaching the electrons to the residual process gas to generate negative ions. The application of the high-frequency voltage and the interruption of the high-frequency voltage are alternately repeated.
摘要翻译：等离子体发生器在等离子体中产生正离子和负离子。离子提取部分（4,5）选择性地从等离子体中提取产生的正离子和负离子，并且在预定方向上加速提取的离子。正离子和负离子选择性地施加到工件（X）上。等离子体发生器对真空室中的处理气体施加高频电压，用于产生由来自处理气体的正离子和电子组成的等离子体，并且中断用于将电子附着到残余处理气体的高频电压以产生负离子。交替地重复施加高频电压和高频电压的中断。

5. 发明授权

US06909086B2 Neutral particle beam processing apparatus 失效
标题翻译：中性粒子束处理装置
公开(公告)号：US06909086B2
公开(公告)日：2005-06-21
申请号：US10471742
申请日：2002-03-22
申请人： Seiji Samukawa , Katsunori Ichiki , Kazuo Yamauchi , Hirokuni Hiyama
发明人： Seiji Samukawa , Katsunori Ichiki , Kazuo Yamauchi , Hirokuni Hiyama
IPC分类号： H05H1/46 , C23C14/32 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/31 , H05H3/02 , H01L21/306 , H05H3/00
CPC分类号： H05H3/02
摘要： A neutral particle beam processing apparatus comprises a workpiece holder (20) for holding a workpiece (X), a plasma generator for generating a plasma in a vacuum chamber (3) by applying a high-frequency electric field, an orifice electrode (4) disposed between the workpiece holder (20) and the plasma generator, and a grid electrode (5) disposed upstream of the orifice electrode (4) in the vacuum chamber (3). The orifice electrode (4) has orifices (4a) defined therein. The neutral particle beam processing apparatus further comprises a voltage applying unit for applying a voltage between the orifice electrode (4) which serves as an anode and the grid electrode (5) which serves as a cathode, while the high-frequency electric field applied by the plasma generator is being interrupted, to accelerate negative ions in the plasma generated by the plasma generator and pass the accelerated negative ions through the orifices (4a) in the orifice electrode (4).
摘要翻译：中性粒子束处理装置包括用于保持工件（X）的工件保持器（20），用于通过施加高频电场在真空室（3）中产生等离子体的等离子体发生器，孔电极（4）设置在工件保持器（20）和等离子体发生器之间，以及栅极（5），设置在真空室（3）中的孔电极（4）的上游。孔口电极（4）具有限定在其中的孔（4a）。中性粒子束处理装置还包括用于在用作阳极的孔电极（4）和用作阴极的栅电极（5）之间施加电压的电压施加单元，同时施加的高频电场等离子体发生器被中断，以加速由等离子体发生器产生的等离子体中的负离子，并使加速的负离子通过孔口电极（4）中的孔（4a）。

6. 发明授权

US06858838B2 Neutral particle beam processing apparatus 失效
标题翻译：中性粒子束处理装置
公开(公告)号：US06858838B2
公开(公告)日：2005-02-22
申请号：US10451635
申请日：2002-03-22
申请人： Katsunori Ichiki , Kazuo Yamauchi , Hirokuni Hiyama , Seiji Samukawa
发明人： Katsunori Ichiki , Kazuo Yamauchi , Hirokuni Hiyama , Seiji Samukawa
IPC分类号： H05H1/46 , B01J19/08 , C23C14/32 , C23C16/50 , H01J27/16 , H01J37/08 , H01J37/317 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H05H3/02 , H01L21/306
CPC分类号： H01J37/321 , H01J37/3178 , H01J37/32357 , H05H3/02
摘要： A neutral particle beam processing apparatus comprises a plasma generator for generating positive ions and/or negative ions in a plasma, a pair of electrodes (5, 6) involving the plasma generated by the plasma generator therebetween, and a power supply (102) for applying a voltage between the pair of electrodes (5, 6). The pair of electrodes (5, 6) accelerate the positive ions and/or the negative ions generated by the plasma generator. The positive ions and/or the negative ions are neutralized and converted into neutral particles while being drifted in the plasma between the pair of electrodes (5, 6) toward a workpiece (X). The accelerated neutral particles pass through one of the electrodes (6) and are applied to the workpiece (X).
摘要翻译：一种中性粒子束处理装置，包括：等离子体发生器，用于在等离子体中产生正离子和/或负离子;一对电极（5,6），其包括由等离子体发生器在其间产生的等离子体;以及电源（102），用于在所述一对电极（5,6）之间施加电压。一对电极（5,6）加速由等离子体发生器产生的正离子和/或负离子。正离子和/或负离子被中和并转化成中性粒子，同时在一对电极（5,6）之间的等离子体中朝向工件（X）漂移。加速的中性粒子通过电极（6）之一并施加到工件（X）上。

7. 发明授权

US07144520B2 Etching method and apparatus 有权
标题翻译：蚀刻方法和装置
公开(公告)号：US07144520B2
公开(公告)日：2006-12-05
申请号：US10493414
申请日：2002-11-08
申请人： Katsunori Ichiki , Kazuo Yamauchi , Hirokuni Hiyama , Seiji Samukawa
发明人： Katsunori Ichiki , Kazuo Yamauchi , Hirokuni Hiyama , Seiji Samukawa
IPC分类号： H01L21/00 , B44C1/22
CPC分类号： H01J37/321 , H01J37/32357 , H01L21/3065
摘要： An etching apparatus comprises a workpiece holder (21) for holding a workpiece (X), a plasma generator (10, 20) for generating a plasma (30) in a vacuum chamber (3), an orifice electrode (4) disposed between the workpiece holder (21) and the plasma generator (10, 20), and a grid electrode (5) disposed upstream of the orifice electrode (4) in the vacuum chamber (3). The orifice electrode (4) has orifices (4a) defined therein. The etching apparatus further comprises a voltage applying unit (25, 26) for applying a voltage between the orifice electrode (4) and the grid electrode (5) to accelerate ions from the plasma (30) generated by the plasma generator (10, 20) and to pass the extracted ions through the orifices (4a) in the orifice electrode (4). A first collimated neutral particle beam is generated and applied to the workpiece (X) for etching a surface of a processing layer (60) of the workpiece (X). A second collimated neutral particle beam is generated, and a mask (50) for covering at least a portion of the surface of the processing layer (60) is sputtered by the second neutral particle beam to form a protecting film (80) on a sidewall (60a) of the processing layer (60) for protecting the sidewall (60a) of the processing layer (60) from being etched by the first neutral particle beam.
摘要翻译：蚀刻装置包括用于保持工件（X）的工件保持器（21），用于在真空室（3）中产生等离子体（30）的等离子体发生器（10,20），设置在真空室工件保持器（21）和等离子体发生器（10,20）以及设置在真空室（3）中的孔电极（4）上游的栅电极（5）。孔口电极（4）具有限定在其中的孔（4a）。蚀刻装置还包括用于在孔电极（4）和栅电极（5）之间施加电压的电压施加单元（25,26），以加速由等离子体发生器（10,20）产生的等离子体（30）的离子）并使提取的离子通过孔口电极（4）中的孔（4a）。产生第一准直中性粒子束并将其施加到工件（X），用于蚀刻工件（X）的处理层（60）的表面。产生第二准直中性粒子束，并且用于覆盖处理层（60）的表面的至少一部分的掩模（50）由第二中性粒子束溅射，以在侧壁上形成保护膜（80）用于保护处理层（60）的侧壁（60a）不被第一中性粒子束蚀刻的处理层（60）的上表面（60a）。

8. 发明授权

US07034285B2 Beam source and beam processing apparatus 失效
标题翻译：光源和光束处理装置
公开(公告)号：US07034285B2
公开(公告)日：2006-04-25
申请号：US10797723
申请日：2004-03-11
申请人： Katsunori Ichiki , Akio Shibata , Akira Fukuda , Hirokuni Hiyama , Kazuo Yamauchi , Seiji Samukawa
发明人： Katsunori Ichiki , Akio Shibata , Akira Fukuda , Hirokuni Hiyama , Kazuo Yamauchi , Seiji Samukawa
IPC分类号： H05H3/02
CPC分类号： H05H1/46 , H01J37/08
摘要： A beam source has a plasma generating chamber and a gas inlet port for introducing a gas into the plasma generating chamber. The beam source includes a plasma generator for generating positive-negative ion plasma containing positive ions at a density of at least 1010 ions/cm3 and negative ions from the gas. The beam source also includes a plasma potential adjustment electrode disposed in the plasma generating chamber and a grid electrode having a plurality of beam extraction holes formed therein. The beam extraction holes have a diameter of at least 0.5 mm. The beam source has a first power supply for applying a voltage of at most 500 V between the plasma potential adjustment electrode and the grid electrode.
摘要翻译：光束源具有等离子体产生室和用于将气体引入等离子体产生室的气体入口端口。光束源包括等离子体发生器，用于产生具有至少10×10 5 / cm 3的密度的正离子和来自气体的负离子。光束源还包括设置在等离子体发生室中的等离子体电位调节电极和形成有多个光束提取孔的栅格电极。光束提取孔的直径至少为0.5mm。光束源具有用于在等离子体电位调节电极和栅电极之间施加至多500V的电压的第一电源。

9. 发明授权

US06861643B2 Neutral particle beam processing apparatus 失效
标题翻译：中性粒子束处理装置
公开(公告)号：US06861643B2
公开(公告)日：2005-03-01
申请号：US10471741
申请日：2002-03-22
申请人： Katsunori Ichiki , Kazuo Yamauchi , Hirokuni Hiyama , Seiji Samukawa
发明人： Katsunori Ichiki , Kazuo Yamauchi , Hirokuni Hiyama , Seiji Samukawa
IPC分类号： G21K5/04 , B01J19/08 , C23C14/32 , C23C16/50 , H01J37/317 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/304 , H01L21/3065 , H05H1/46 , H01L21/306 , H05H3/00
CPC分类号： H01J37/32357 , H01J37/3178 , H01J37/32688
摘要： A neutral particle beam processing apparatus comprises a process gas inlet port (11) for introducing a process gas into a vacuum chamber (1), a plasma generating chamber (2) for generating positive ions and electrons from the introduced process gas, and a negative ion generating chamber (3) for attaching electrons generated in the plasma generating chamber to the residual gas to generate negative ions. The neutral particle beam processing apparatus further comprises an ion extracting portion (4) for extracting the positive ions or the negative ions and accelerating the positive ions or the negative ions in a predetermined direction, and a neutralizing chamber (5) for neutralizing an ion beam generated by the ion extracting portion (4) to generate a neutral particle beam. The neutral particle beam generated in the neutralizing chamber (5) is applied to a workpiece (X).
摘要翻译：中性粒子束处理装置包括用于将处理气体引入真空室（1）的工艺气体入口（11），用于从引入的处理气体产生正离子和电子的等离子体产生室（2）离子发生室（3），用于将在等离子体产生室中产生的电子附着到残留气体上以产生负离子。中性粒子束处理装置还包括用于提取正离子或负离子并沿预定方向加速正离子或负离子的离子提取部分（4）和用于中和离子束的中和室（5）由离子提取部分（4）产生的中性粒子束。在中和室（5）中产生的中性粒子束被施加到工件（X）上。

10. 发明授权

US07078862B2 Beam source and beam processing apparatus 失效
标题翻译：光源和光束处理装置
公开(公告)号：US07078862B2
公开(公告)日：2006-07-18
申请号：US10797596
申请日：2004-03-11
申请人： Akira Fukuda , Akio Shibata , Hirokuni Hiyama , Katsunori Ichiki , Kazuo Yamauchi , Seiji Samukawa
发明人： Akira Fukuda , Akio Shibata , Hirokuni Hiyama , Katsunori Ichiki , Kazuo Yamauchi , Seiji Samukawa
IPC分类号： H05B31/26 , C23C16/00
CPC分类号： H01J37/321 , H01J37/32357
摘要： A beam source has a plasma generating chamber, an antenna for generating plasma in the plasma generating chamber, a first electrode disposed in the plasma generating chamber, and a second electrode disposed in the plasma generating chamber. Both of the antenna and the second electrode face the first electrode. The beam source also includes a power supply for applying a voltage between the first electrode and the second electrode to extract particles from the plasma generated by the antenna. The beam source applies various kinds of beams having a large diameter, such as a positive ion beam, a negative ion beam, and a neutral particle beam, uniformly to a workpiece.
摘要翻译：光束源具有等离子体产生室，用于在等离子体产生室中产生等离子体的天线，设置在等离子体发生室中的第一电极和设置在等离子体产生室中的第二电极。天线和第二电极都面向第一电极。光束源还包括用于在第一电极和第二电极之间施加电压从而从天线产生的等离子体中提取粒子的电源。光束源对工件均匀地施加各种具有大直径的光束，例如正离子束，负离子束和中性粒子束。

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