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    • 3. 发明授权
    • Inspection apparatus and method
    • 检验仪器及方法
    • US09057711B2
    • 2015-06-16
    • US13307389
    • 2011-11-30
    • Hideo TsuchiyaTakafumi InoueNobutaka Kikuiri
    • Hideo TsuchiyaTakafumi InoueNobutaka Kikuiri
    • H04N7/18G01N21/956G01N21/88
    • G01N21/95607G01N21/8851G01N2021/95615G01N2021/95676
    • An inspection apparatus and method, which can perform defect determination and estimate a defect on a mask and the resultant influence on a wafer. Each of the transfer images is reviewed in order of following (1) to (3): (1) when the degree of defect identified in the first comparing unit is at or exceeding a third threshold and an error ratio corresponding to the defect is at or exceeding a fourth threshold; (2) when the degree of a defect identified in the first comparing unit is less than the third threshold, and an error ratio corresponding to the defect is at or exceeding a fourth threshold; and (3) when the degree of a defect identified in the first comparing unit is at or exceeding a third threshold, and an error ratio corresponding to the defect is less than the fourth threshold.
    • 一种检查装置和方法,其可以执行缺陷确定并估计掩模上的缺陷以及对晶片的所得影响。 以下(1)〜(3)的顺序对每个传送图像进行检查:(1)当在第一比较单元中识别的缺陷程度在或超过第三阈值时,并且与缺陷相对应的误差率在 或超过第四阈值; (2)当在第一比较单元中识别的缺陷程度小于第三阈值时,并且与该缺陷相对应的误差率在或超过第四阈值; 以及(3)当第一比较单元中识别的缺陷程度在或超过第三阈值时,并且与缺陷相对应的误差率小于第四阈值。