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    • 2. 发明申请
    • Liquid crystal display device and method for fabrication thereof
    • 液晶显示装置及其制造方法
    • US20050275776A1
    • 2005-12-15
    • US11145225
    • 2005-06-06
    • Makoto OhueTakeshi Ishida
    • Makoto OhueTakeshi Ishida
    • G02F1/1335G02F1/1362
    • G02F1/133555G02F1/136227G02F2001/136222
    • A liquid crystal display device 1 has liquid crystal 6 sealed between a pixel substrate 4, having a pixel electrode 10 composed of a reflective electrode 42 that reflects light and a transparent electrode 41 that transmits light, and a opposed substrate 5 having a opposed electrode 23 located opposite the pixel electrode 10. The liquid crystal display device 1 displays an image while being illuminated by light reflected from the reflective electrode 42 or with light transmitted through the transparent electrode 41. The pixel substrate 4 has a coloring layer 43, which is formed on top of the reflective electrode 42 to add a color to light and has an opening 43a above the reflective electrode 42, and a multiple-gap portion 44, which is formed continuously on top of the coloring layer 43 and in the opening 43a and narrows the thickness of the liquid crystal 6 above the reflective electrode 42. The transparent electrode 41 is laid on the multiple-gap portion 44 and the coloring layer 43. The transparent electrode 41 and the reflective electrode 42 conduct to each other through a contact hole 44a formed in the multiple-gap portion 44, inside the rim of the opening 43a.
    • 液晶显示装置1具有密封在像素基板4之间的液晶6,像素基板4具有由反射光的反射电极42构成的像素电极10和透射光的透明电极41以及具有相对电极23的相对基板5 位于与像素电极10相对的位置。 液晶显示装置1通过从反射电极42反射的光或透过透明电极41的光而被照明而显示图像。 像素基板4具有着色层43,该着色层43形成在反射电极42的顶部上以对光线添加颜色,并且在反射电极42上方具有开口43a以及连续形成的多间隙部分44 在着色层43的顶部和开口部分41a中,使反射电极42上方的液晶6的厚度变窄。 透明电极41放置在多间隙部分44和着色层43上。 透明电极41和反射电极42通过形成在开口部41a的边缘内的多间隙部分44中的接触孔44a彼此导通。
    • 3. 发明授权
    • Liquid crystal display device and method for fabrication thereof
    • 液晶显示装置及其制造方法
    • US07450201B2
    • 2008-11-11
    • US11145225
    • 2005-06-06
    • Makoto OhueTakeshi Ishida
    • Makoto OhueTakeshi Ishida
    • G02F1/1333G02F1/1335
    • G02F1/133555G02F1/136227G02F2001/136222
    • A liquid crystal display device 1 has liquid crystal 6 sealed between a pixel substrate 4, having a pixel electrode 10 composed of a reflective electrode 42 that reflects light and a transparent electrode 41 that transmits light, and a opposed substrate 5 having a opposed electrode 23 located opposite the pixel electrode 10. The liquid crystal display device 1 displays an image while being illuminated by light reflected from the reflective electrode 42 or with light transmitted through the transparent electrode 41. The pixel substrate 4 has a coloring layer 43, which is formed on top of the reflective electrode 42 to add a color to light and has an opening 43a above the reflective electrode 42, and a multiple-gap portion 44, which is formed continuously on top of the coloring layer 43 and in the opening 43a and narrows the thickness of the liquid crystal 6 above the reflective electrode 42. The transparent electrode 41 is laid on the multiple-gap portion 44 and the coloring layer 43. The transparent electrode 41 and the reflective electrode 42 conduct to each other through a contact hole 44a formed in the multiple-gap portion 44, inside the rim of the opening 43a.
    • 液晶显示装置1具有密封在像素基板4之间的液晶6,像素基板4具有由反射光的反射电极42构成的像素电极10和透射光的透明电极41以及具有相对电极23的相对基板5 位于与像素电极10相对的位置。 液晶显示装置1通过从反射电极42反射的光或透过透明电极41的光而被照明而显示图像。 像素基板4具有着色层43,该着色层43形成在反射电极42的顶部上以对光线添加颜色,并且在反射电极42上方具有开口43a以及连续形成的多间隙部分44 在着色层43的顶部和开口部分41a中,使反射电极42上方的液晶6的厚度变窄。 透明电极41放置在多间隙部分44和着色层43上。 透明电极41和反射电极42通过形成在开口部41a的边缘内的多间隙部分44中的接触孔44a彼此导通。
    • 5. 发明授权
    • Semiconductor device and manufacturing method thereof
    • 半导体装置及其制造方法
    • US5950077A
    • 1999-09-07
    • US910138
    • 1997-08-13
    • Makoto OhueShinji Shimada
    • Makoto OhueShinji Shimada
    • H01L29/786G02F1/1362H01L21/30H01L21/312H01L21/336H01L21/322
    • H01L29/66757H01L21/3003G02F1/136227H01L21/312Y10S148/06
    • A semiconductor device in accordance with the present invention, for example, is a thin film transistor provided on a transparent substrate. The semiconductor device made of a polysilicon film is provided with (1) a semiconductor layer having a source region and a drain region and (2) a gate electrode provided on a region between the source region and the drain region of the semiconductor layer via a gate insulating film. The semiconductor device is further provided with an organic insulating film made of a condensation polymer having an imide ring such that the organic insulating film covers the gate electrode, the source region, and the drain region. The organic insulating film is formed by applying an organic insulating material such as polyimide, polyamic acid, and other materials, and thereafter by carrying out a calcining process, thereby reducing a trap density of the polysilicon film constituting the semiconductor layer without lowering the productivity due to low throughput, and realizing a semiconductor device which can be suitably adopted as a thin film transistor constituting a matrix circuit section of an active-matrix type liquid crystal display device.
    • 例如,根据本发明的半导体器件是设置在透明基板上的薄膜晶体管。 由多晶硅膜制成的半导体器件设置有(1)具有源极区和漏极区的半导体层,以及(2)设置在半导体层的源极区和漏极区之间的区域上的栅电极, 栅极绝缘膜。 半导体器件还设置有由具有酰亚胺环的缩聚物制成的有机绝缘膜,使得有机绝缘膜覆盖栅极电极,源极区域和漏极区域。 通过施加有机绝缘材料如聚酰亚胺,聚酰胺酸等材料形成有机绝缘膜,然后进行煅烧处理,从而降低构成半导体层的多晶硅膜的陷阱密度,而不降低生产率 实现低成本率,实现可以适用于构成有源矩阵型液晶显示装置的矩阵电路部的薄膜晶体管的半导体装置。