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1. 发明授权

US4392175A Protecting device for a gate turn-off thyristor 失效
标题翻译：栅极关断晶闸管保护装置
公开(公告)号：US4392175A
公开(公告)日：1983-07-05
申请号：US212244
申请日：1980-12-02
申请人： Katsuhiko Takigami , Minami Takeuchi
发明人： Katsuhiko Takigami , Minami Takeuchi
IPC分类号： H03K17/082 , H02H3/20
CPC分类号： H03K17/0824
摘要： A protecting device includes a discriminating circuit and a protecting circuit. The GTO thyristor is operated in such a manner that a carrier storing is completed from a first time point at which the supply of a negative gate current is started to a second time point, an anode-cathode voltage increases from the second time point to a third time point and decreases from the third time point to a fourth time point, and increases again from the fourth time point. The discriminating circuit includes a circuit for obtaining an amount of change between the anode-cathode voltages at the third and fourth time points, a circuit for obtaining a ratio of the amount of change to the anode-cathode voltage at the third time point, and a comparing circuit for producing a control signal when the ratio is smaller than a given value. The protecting circuit, when receiving the control signal, stops the conduction of the GTO thyristor. It is judged whether or not the GTO thyristor is operated at a critical point to its break-down.
摘要翻译：保护装置包括识别电路和保护电路。 GTO晶闸管的操作方式是从负栅极电流的供给开始到第二时间点的第一时间点完成载流子存储，阳极 - 阴极电压从第二时间点增加到第三时间点，并且从第三时间点减少到第四时间点，并且从第四时间点开始再次增加。识别电路包括用于获得在第三和第四时间点的阳极 - 阴极电压之间的变化量的电路，用于获得在第三时间点的变化量与阳极 - 阴极电压的比率的电路，以及比较电路，用于当所述比值小于给定值时产生控制信号。保护电路在接收到控制信号时，停止GTO晶闸管的导通。判断GTO晶闸管是否在其分解的关键点运行。

2. 发明授权

US5793065A Insulated-gate thyristor 失效
公开(公告)号：US5793065A
公开(公告)日：1998-08-11
申请号：US483325
申请日：1995-06-07
申请人： Takashi Shinohe , Kazuya Nakayama , Minami Takeuchi , Masakazu Yamaguchi , Mitsuhiko Kitagawa , Ichiro Omura , Akio Nakagawa
发明人： Takashi Shinohe , Kazuya Nakayama , Minami Takeuchi , Masakazu Yamaguchi , Mitsuhiko Kitagawa , Ichiro Omura , Akio Nakagawa
IPC分类号： H01L29/423 , H01L29/745 , H01L29/749 , H01L29/74 , H01L31/111
CPC分类号： H01L29/7455 , H01L29/42308 , H01L29/749
摘要： Disclosed herein is an insulated-gate thyristor comprising a base layer of a first conductivity type, having first and second major surfaces, a first main-electrode region of the first conductivity type, formed in the first major surface of the base layer, a second main-electrode region of a second conductivity type, formed in the second major surface of the base layer, at least a pair of grooves extending from the first main-electrode region into the base layer, and opposing each other and spaced apart by a predetermined distance, insulated gate electrodes formed within the grooves, and a turn-off insulated-gate transistor structure for releasing carriers of the second conductivity type from the base layer.

3. 发明授权

US4357621A Reverse conducting thyristor with specific resistor structures between main cathode and amplifying, reverse conducting portions 失效
公开(公告)号：US4357621A
公开(公告)日：1982-11-02
申请号：US89102
申请日：1979-10-29
申请人： Minami Takeuchi
发明人： Minami Takeuchi
IPC分类号： H01L29/74 , H01L29/747
CPC分类号： H01L29/7416
摘要： A reverse conducting thyristor includes a thyristor section, a diode section and a semiconductor separator section for electrically separating both the sections. The thyristor section includes: a first region of first conductivity type, a second region of a second conductivity type, a third region of the first conductivity type, a main emitter region of the second conductivity type, an auxiliary emitter region formed, with intervention of the exposed portion of said third region, facing at least a part of the periphery of said main emitter region which does not contact the separate section and a cathode electrode, an auxiliary gate electrode contacting the auxiliary emitter region and enclosing, with intervention of the exposed portion of the third region, at least a part of the periphery of said main emitter region which does not contact the separate section, and a main gate electrode formed on the exposure surface of the third region contacting the side wall of the auxiliary emitter region which does not face the main emitter region. The respective components are successively layered on a first electrode acting as an anode electrode. The diode section includes a fourth region of the second conductivity type formed on the first or anode electrode, a fifth region of the first conductivity type formed on the fourth region, and a second electrode formed on the fifth region and connected to the cathode electrode. The separate section includes a sixth region formed on the first electrode and of the first conductivity type, a seventh region formed on the sixth region and of the second conductivity type and an eighth region formed on the seventh region and of the first conductivity type. The resistance values of the semiconductor layers between the cathode electrode and the second electrode and between the cathode electrode and the auxiliary gate electrode are each 2 to 18 Ohms.

4. 发明授权

US4296427A Reverse conducting amplified gate thyristor with plate-like separator section 失效
公开(公告)号：US4296427A
公开(公告)日：1981-10-20
申请号：US70655
申请日：1979-08-28
申请人： Minami Takeuchi , Minoru Kuriki
发明人： Minami Takeuchi , Minoru Kuriki
IPC分类号： H01L29/74 , H01L29/747
CPC分类号： H01L29/7416
摘要： A reverse conducting thyristor comprises a thyristor section, a diode section and a separator section. The three sections are integrally formed into a cylindrical body. The thyristor section is constituted by a first region of a first conductivity type, a second region of the second conductivity type, a third region of the first conductivity type, a main emitter region of the second conductivity type, a cathode electrode, an auxiliary emitter region, an auxiliary gate electrode and a main gate electrode.The first region is formed on a first electrode, the second region on the first region, and the third region on the second region. The main emitter region is so formed in the third region as to have its surface on the same level with that of the third region. The auxiliary emitter region is similarly formed in the third region and faces at least a part of that periphery of the main emitter region which does not contact the separator section. The cathode electrode is formed on the main emitter region. The auxiliary gate electrode is formed partly on the third region and partly on the auxiliary emitter region and is arched concentrically with the cylindrical body so as to surround at least a part of said periphery of the main emitter region. The main gate electrode is formed on that surface portion of the third region which is adjacent to that lateral surface of the auxiliary emitter region which does not face the main emitter region.The diode section comprises a fourth region of the second conductivity type, a fifth region of the first conductivity type and a second electrode. The fourth region is formed on the first electrode, the fifth region on the fourth region, and the second electrode on the fifth region.The separator section is a plate which is constituted by a sixth region of the first conductivity type, a seventh region of the second conductivity type and an eight region of the first conductivity type. The sixth region is formed on the first electrode, the seventh region on the sixth region, and the eighth region on the seventh region.

5. 发明授权

US5381026A Insulated-gate thyristor 失效
公开(公告)号：US5381026A
公开(公告)日：1995-01-10
申请号：US760344
申请日：1991-09-16
申请人： Takashi Shinohe , Kazuya Nakayama , Minami Takeuchi , Masakazu Yamaguchi , Mitsuhiko Kitagawa , Ichiro Omura , Akio Nakagawa
发明人： Takashi Shinohe , Kazuya Nakayama , Minami Takeuchi , Masakazu Yamaguchi , Mitsuhiko Kitagawa , Ichiro Omura , Akio Nakagawa
IPC分类号： H01L29/423 , H01L29/745 , H01L29/749 , H01L27/08 , H01L29/74
CPC分类号： H01L29/7455 , H01L29/42308 , H01L29/749
摘要： Disclosed herein is an insulated-gate thyristor comprising a base layer of a first conductivity type, having first and second major surfaces, a first main-electrode region of the first conductivity type, formed in the first major surface of the base layer, a second main-electrode region of a second conductivity type, formed in the second major surface of the base layer, at least a pair of grooves extending from the first main-electrode region into the base layer, and opposing each other and spaced apart by a predetermined distance, insulated gate electrodes formed within the grooves, and a turn-off insulated-gate transistor structure for releasing carriers of the second conductivity type from the base layer.

6. 发明授权

US5089719A Drive circuit for a semiconductor device with high voltage for turn-on and low voltage for normal operation 失效
标题翻译：用于正常工作的高压低电压的半导体器件的驱动电路
公开(公告)号：US5089719A
公开(公告)日：1992-02-18
申请号：US587807
申请日：1990-09-25
申请人： Yoshio Kamei , Minami Takeuchi
发明人： Yoshio Kamei , Minami Takeuchi
IPC分类号： H03K17/04 , H03K17/0412 , H03K17/0812 , H03K17/56 , H03K17/567
CPC分类号： H03K17/04123 , H03K17/08122 , H03K17/567
摘要： A drive circuit for a voltage-controlled type semiconductor device is provided which comprises ON gate drive circuit for supplying an ON control signal to a control electrode of the semiconductor device which performs a current switching, OFF gate drive circuit for supplying an OFF control signal to the control electrode of the semiconductor device, high voltage power source, connected to at least one of the ON gate drive circuit and OFF gate drive circuit, for supplying a control current of a predetermined current increase rate to the control electrode of the semiconductor device through at least one of the ON gate drive circuit and OFF gate drive circuit, low voltage power source, provided in juxtaposition with the high voltage power source, for supplying, to the control electrode, enough control current to hold the semiconductor device in a normal state, and switch for supplying an output of the high voltage power source to the control electrode in an earlier portion of a turn ON or a turn OFF period, and an output of the low voltage power source to the control electrode in a normally ON or a normally OFF state.

7. 发明授权

US06236069B1 Insulated-gate thyristor 失效
标题翻译：绝缘栅晶闸管
公开(公告)号：US06236069B1
公开(公告)日：2001-05-22
申请号：US09102360
申请日：1998-06-23
申请人： Takashi Shinohe , Kazuya Nakayama , Minami Takeuchi , Masakazu Yamaguchi , Mitsuhiko Kitagawa , Ichiro Omura , Akio Nakagawa
发明人： Takashi Shinohe , Kazuya Nakayama , Minami Takeuchi , Masakazu Yamaguchi , Mitsuhiko Kitagawa , Ichiro Omura , Akio Nakagawa
IPC分类号： H01L2974
CPC分类号： H01L29/7455 , H01L29/42308 , H01L29/749
摘要： Disclosed herein is an insulated-gate thyristor comprising a base layer of a first conductivity type, having first and second major surfaces, a first main-electrode region of the first conductivity type, formed in the first major surface of the base layer, a second main-electrode region of a second conductivity type, formed in the second major surface of the base layer, at least a pair of grooves extending from the first main-electrode region into the base layer, and opposing each other and spaced apart by a predetermined distance, insulated gate electrodes formed within the grooves, and a turn-off insulated-gate transistor structure for releasing carriers of the second conductivity type from the base layer.
摘要翻译：本文公开了一种绝缘栅极晶闸管，其包括第一导电类型的基极层，具有第一和第二主表面，形成在基底层的第一主表面中的第一导电类型的第一主电极区域，第二导电类型的第二主表面形成在基底层的第二主表面的第二导电类型的主电极区域，至少一对从第一主电极区域延伸到基底层中并且彼此相对并间隔开预定的凹槽距离，形成在沟槽内的绝缘栅电极，以及用于从基层释放第二导电类型的载流子的关断绝缘栅晶体管结构。

8. 发明授权

US5464994A Insulated-gate thyristor 失效
标题翻译：绝缘栅晶闸管
公开(公告)号：US5464994A
公开(公告)日：1995-11-07
申请号：US291754
申请日：1994-08-16
申请人： Takashi Shinohe , Kazuya Nakayama , Minami Takeuchi , Masakazu Yamaguchi , Mitsuhiko Kitagawa , Ichiro Omura , Akio Nakagawa
发明人： Takashi Shinohe , Kazuya Nakayama , Minami Takeuchi , Masakazu Yamaguchi , Mitsuhiko Kitagawa , Ichiro Omura , Akio Nakagawa
IPC分类号： H01L29/423 , H01L29/745 , H01L29/749 , H01L29/74
CPC分类号： H01L29/7455 , H01L29/42308 , H01L29/749
摘要： Disclosed herein is an insulated-gate thyristor comprising a base layer of a first conductivity type, having first and second major surfaces, a first main-electrode region of the first conductivity type, formed in the first major surface of the base layer, a second main-electrode region of a second conductivity type, formed in the second major surface of the base layer, at least a pair of grooves extending from the first main-electrode region into the base layer, and opposing each other and spaced apart by a predetermined distance, insulated gate electrodes formed within the grooves, and a turn-off insulated-gate transistor structure for releasing carriers of the second conductivity type from the base layer.
摘要翻译：本文公开了一种绝缘栅极晶闸管，其包括第一导电类型的基极层，具有第一和第二主表面，形成在基底层的第一主表面中的第一导电类型的第一主电极区域，第二导电类型的第二主表面形成在基底层的第二主表面的第二导电类型的主电极区域，至少一对从第一主电极区域延伸到基底层中并且彼此相对并间隔开预定的凹槽距离，形成在沟槽内的绝缘栅电极，以及用于从基层释放第二导电类型的载流子的关断绝缘栅晶体管结构。

9. 发明授权

US4609937A Power semiconductor device with O-ring seal 失效
标题翻译：功率半导体器件具有O形圈密封
公开(公告)号：US4609937A
公开(公告)日：1986-09-02
申请号：US726943
申请日：1985-04-26
申请人： Minami Takeuchi , Shuichi Otake
发明人： Minami Takeuchi , Shuichi Otake
IPC分类号： H01L21/52 , H01L21/58 , H01L23/047 , H01L23/32 , H01L25/07 , H01L23/48 , H01L23/02
CPC分类号： H01L24/83 , H01L23/047 , H01L23/32 , H01L24/33 , H01L25/072 , H01L25/074 , H01L2224/8319 , H01L2224/8385 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01042 , H01L2924/01074 , H01L2924/01082 , H01L2924/014 , H01L2924/07802 , H01L2924/1301
摘要： A power semiconductor device dispensed with soldering and useful for fork lifts and etc., wherein at least one O-ring is provided between the inner wall of case housing at least one semiconductor element structure and outer periphery of a member disposed on the semiconductor element structure inside said case so as to hermetically seal the semiconductor element structure from external atmosphere.
摘要翻译：一种功率半导体器件，省去了焊接并可用于叉车升降机等，其中至少一个O形环设置在容纳至少一个半导体元件结构的壳体的内壁和设置在半导体元件结构上的构件的外周之间在所述壳体内部，以将半导体元件结构与外部气氛气密密封。

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