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    • 2. 发明授权
    • FET amplifier with gate voltage control
    • FET放大器,具有栅极电压控制
    • US5278517A
    • 1994-01-11
    • US800999
    • 1991-12-02
    • Noriyuki Fujita
    • Noriyuki Fujita
    • H03F1/02H03F1/32H03G3/20H03G3/30
    • H03F1/0261
    • In an amplifier comprising an FET (11) having a gate electrode and source and drain electrodes and a drain bias circuit (19) controlled by an output power control command to supply a drain bias to the drain electrode, a gate bias circuit (17) is controlled by the output power control command to supply the gate electrode with a controlled voltage as a gate bias. The gate bias circuit may have a voltage source terminal (25) given a predetermined voltage and comprises a gate bias control device (27) for controlling the predetermined voltage so as to develop the controlled voltage in accordance with the output power control command. Preferably, the device comprises a ROM for memorizing gate voltage data and a voltage producing section for converting the predetermined voltage to the controlled voltage in compliance with one of the gate voltage data that is selected by the command. Alternatively, the device comprises a voltage divider for dividing the predetermined voltage into divided voltages and a selector for selecting one of the divided voltages as the controlled voltage in accordance with the command.
    • 在包括具有栅电极和源电极和漏电极的FET(11)的放大器和由输出功率控制命令控制的漏极偏置电路(19),以向漏电极提供漏极偏置的栅极偏置电路(17) 由输出功率控制命令控制,以将栅极电极作为栅极偏压提供受控电压。 栅极偏置电路可以具有给定预定电压的电压源端子(25),并且包括用于控制预定电压以便根据输出功率控制命令产生受控电压的栅极偏置控制装置(27)。 优选地,该装置包括用于存储栅极电压数据的ROM和用于根据由该命令选择的栅极电压数据之一将预定电压转换为受控电压的电压产生部分。 或者,该装置包括用于将预定电压划分为分压的分压器和用于根据该命令选择一个分压电压作为受控电压的选择器。
    • 4. 发明授权
    • Glass bottle for high-frequency heat sealing
    • 玻璃瓶用于高频热封
    • US06428864B1
    • 2002-08-06
    • US09820354
    • 2001-03-29
    • Noriyuki Fujita
    • Noriyuki Fujita
    • B65D4100
    • B65D1/40B65D1/0207Y10T428/13
    • Glass bottles having undergone high-frequency heat sealing, to depress the dispersion of sealing strength as low as possible and to improve the ease of both sealing and unsealing. A rough surface having minute unevenness is formed in the proximity of the apical part of the mouth of a glass bottle, wherein the apical part contacts with a sealing material. Since (1) a contact area between the sealing material and the glass surface decreases, and the quantity of heat taken by the glass from the sealing material decreases, (2) a bond area increases; and (3) an anchor effect is generated, the sealing strength increases, and simultaneously the dispersion of the sealing strength decreases.
    • 经过高频热封的玻璃瓶,尽可能地降低密封强度的分散,并提高密封和开封的容易性。 在玻璃瓶口的顶部附近形成具有微小凹凸的粗糙表面,其中顶部与密封材料接触。 由于(1)密封材料与玻璃表面之间的接触面积减小,玻璃从密封材料中吸收的热量减少,(2)粘合面积增大; (3)产生锚固效应,密封强度提高,密封强度的分散性降低。
    • 5. 发明授权
    • Transmitting diversity circuit for TDMA radio unit
    • 用于TDMA无线电单元的发射分集电路
    • US6128476A
    • 2000-10-03
    • US12557
    • 1998-01-23
    • Noriyuki Fujita
    • Noriyuki Fujita
    • H04B1/48H04B7/06H04B7/08H04B7/02
    • H04B7/082H04B7/0602
    • Disclosed is a transmitting diversity circuit for a TDMA radio unit which has: a plurality of antennas; a plurality of transmitting circuits; a plurality of receiving circuits; a first switch which is connected with one of the plurality of transmitting circuits and selects one of the plurality of antennas; a second switch which is connected with the first switch and selects the one or the other of the plurality of transmitting circuits; a third switch which is connected with the second switch and one or more of the plurality of receiving circuits and selects one of the plurality of transmitting circuits or the one or more of the plurality of receiving circuits; a judging circuit which controls the switching of the first and second switches according to a level of received field strength to be detected by the receiving circuit connected with the third switch; wherein the one of the plurality of transmitting circuits is connected through the first to third switches with the selected one of the plurality of antennas.
    • 公开了一种具有:多个天线的TDMA无线电单元的发射分集电路; 多个发送电路; 多个接收电路; 第一开关,其与所述多个发送电路中的一个连接并选择所述多个天线中的一个; 第二开关,其与所述第一开关连接并选择所述多个发送电路中的一个或另一个; 第三开关,其与所述第二开关和所述多个接收电路中的一个或多个连接,并且选择所述多个发送电路中的一个或所述多个接收电路中的一个或多个; 判断电路,根据由与第三开关连接的接收电路检测的接收场强的电平来控制第一和第二开关的切换; 其中所述多个发射电路中的一个通过所述第一至第三开关与所述多个天线中的所选择的天线连接。
    • 8. 发明授权
    • Linear compensating circuit
    • 线性补偿电路
    • US5329244A
    • 1994-07-12
    • US923323
    • 1992-07-31
    • Noriyuki FujitaMasahiko Tanaka
    • Noriyuki FujitaMasahiko Tanaka
    • H03F1/32H03G3/20H03F1/26
    • H03G3/3042H03F1/3247H03F1/3288
    • A linear compensating circuit comprises a first level detection circuit for detecting the level of an input signal to an amplifier, a second level detection circuit for detecting the level of an output signal from the amplifier, an amplitude compensating circuit for controlling the amplitude of the input signal in accordance with the difference between the signal level detected by the first detection circuit and the signal level detected by the second level detection circuit for improving the linearity of an input-output characteristic of the amplifier, and a phase compensating circuit for controlling the phase of the input signal in accordance with the signal level detected by the second detection circuit. The linear compensating circuit compensates for both amplitude and phase and, as a result, the degradation of phase characteristic caused by amplitude compensation can be prevented, resulting in a reduction in the distortion of the output signal of the amplifier even when it is being operated in the vicinity of the saturation range. This linear compensating circuit is effective when applied to a power amplifier, particularly to a high frequency power amplifier.
    • 线性补偿电路包括用于检测放大器的输入信号的电平的第一电平检测电路,用于检测来自放大器的输出信号的电平的第二电平检测电路,用于控制输入的幅度的幅度补偿电路 根据由第一检测电路检测的信号电平与由第二电平检测电路检测的信号电平之间的差异来提高放大器的输入 - 输出特性的线性度的信号,以及用于控制相位的相位补偿电路 根据由第二检测电路检测的信号电平的输入信号。 线性补偿电路补偿幅度和相位,结果,可以防止由幅度补偿引起的相位特性的劣化,导致放大器的输出信号的失真减少,即使在其被操作时 饱和度范围附近。 该线性补偿电路在应用于功率放大器,特别是高频功率放大器时是有效的。
    • 9. 发明授权
    • Amplifying device
    • 放大装置
    • US07924090B2
    • 2011-04-12
    • US12445836
    • 2007-10-29
    • Noriyuki FujitaShigeo MasaiMasaharu Sato
    • Noriyuki FujitaShigeo MasaiMasaharu Sato
    • H03F3/30
    • H03F1/52H03F1/56H03F3/45475H03F2203/45136H03F2203/45576
    • An amplifying device for setting input impedance at several GΩ to several tens of GΩ and improving an ESD withstand current rating is provided.An ECM is connected to an input terminal 21 and frequency characteristics become flat to a voice band by high input impedance of a CMOS amplifier 20 and the input impedance is set at several GΩ to several tens of GΩ and thereby, response time after detecting a loud voice or turning on a power source of the ECM is speeded up and desired electrical characteristics are achieved. A path for releasing a surge voltage which occurs during assembly in the outside of an IC and intrudes from the input terminal 21 to a power source terminal or an earth terminal without an influence on a signal (20 Hz to 20 kHz) of a voice band entering from the input terminal 21 can be constructed by connecting a P-channel MOS transistor 27 and an N-channel MOS transistor 28 as an ESD protective element.
    • 用于设置几个G&OHgr的输入阻抗的放大装置; 到几十G&OHgr; 并提供了ESD耐受额定电流。 ECM连接到输入端子21,并且频率特性通过CMOS放大器20的高输入阻抗而变得平坦到语音频带,并且输入阻抗被设置为几个G&OHgr; 到几十G&OHgr; 因此,检测到大声音或者打开ECM的电源之后的响应时间被加速并达到期望的电特性。 用于释放在IC外部组装期间发生的浪涌电压的路径,并且从输入端子21入射到电源端子或接地端子,而不影响声频带的信号(20Hz至20kHz) 可以通过连接作为ESD保护元件的P沟道MOS晶体管27和N沟道MOS晶体管28构成从输入端子21进入。
    • 10. 发明授权
    • Voltage controlled variable capacitor
    • 电压可变电容器
    • US07183867B2
    • 2007-02-27
    • US10964704
    • 2004-10-15
    • Junichi MatsuuraEiichi KaminishiNoriyuki Fujita
    • Junichi MatsuuraEiichi KaminishiNoriyuki Fujita
    • H03L7/00
    • H03B5/32H03B2201/0266H03J2200/10
    • To provide a voltage controlled variable capacitor which can change a capacitance value thereof in a wide controlled voltage range and control the capacitance value easily with a high precision without complicating the circuit configuration thereof, and to provide a voltage controlled variable capacitor which can change a capacitance value thereof with a good linearity. The voltage controlled varactor is configured in a manner that varactors VCk, each formed by a series connection of a fixed capacitor Ck (k=1, 2, . . . , n) and a MOS transistor Mk of N channel type, are connected in parallel. The MOS transistors M1 to Mn are configured in a manner that gate widths W are same but gate lengths L1 to Ln are elongated sequentially (that is, L1
    • 为了提供可以在宽的受控电压范围内改变其电容值并且以高精度容易地控制电容值而不使其电路结构复杂化的电压控制可变电容器,并且提供可以改变电容的电压控制的可变电容器 其值具有良好的线性。 电压控制变容二极管被配置为使得由固定电容器C k(k = 1,2,...,n)和N沟道型的MOS晶体管Mk的串联连接形成的变容二极管VCk连接在 平行。 MOS晶体管M 1〜Mn以栅极宽度W相同但栅极长度L 1〜Ln依次延长(即,L 1