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1. 发明授权

US07659184B2 Plasma immersion ion implantation process with chamber seasoning and seasoning layer plasma discharging for wafer dechucking 失效
标题翻译：等离子体浸没离子注入工艺与室内调料和调味料层等离子体放电用于晶圆脱扣
公开(公告)号：US07659184B2
公开(公告)日：2010-02-09
申请号：US12072495
申请日：2008-02-25
申请人： Manoj Vellaikal , Kartik Santhanam , Yen B. Ta , Martin A. Hilkene , Matthew D. Scotney-Castle , Canfeng Lai , Peter I. Porshnev , Majeed A. Foad
发明人： Manoj Vellaikal , Kartik Santhanam , Yen B. Ta , Martin A. Hilkene , Matthew D. Scotney-Castle , Canfeng Lai , Peter I. Porshnev , Majeed A. Foad
IPC分类号： H01L21/20
CPC分类号： H01J37/32477 , H01J37/32412 , H01J2237/0213 , H01J2237/022 , H01J2237/16
摘要： In a plasma immersion ion implantation process, the thickness of a pre-implant chamber seasoning layer is increased (to permit implantation of a succession of wafers without replacing the seasoning layer) without loss of wafer clamping electrostatic force due to increased seasoning layer thickness. This is accomplished by first plasma-discharging residual electrostatic charge from the thick seasoning layer. The number of wafers which can be processed using the same seasoning layer is further increased by fractionally supplementing the seasoning layer after each wafer is processed, which may be followed by a brief plasma discharging of the supplemented seasoning before processing the next wafer.
摘要翻译：在等离子体浸没离子注入工艺中，增加了植入前调节层的厚度（允许植入一系列晶片而不更换调味料层），而不会因调节层厚度的增加而损失晶片夹紧静电力。这是通过首先等离子体排出来自厚调味层的残留静电电荷来实现的。在处理每个晶片之后，可以通过分批补充调味层来进一步增加可以使用相同调味料处理的晶片数量，其后可以在加工下一个晶片之前进行补充调味料的短暂等离子体放电。

2. 发明申请

US20090280628A1 PLASMA IMMERSION ION IMPLANTATION PROCESS WITH CHAMBER SEASONING AND SEASONING LAYER PLASMA DISCHARGING FOR WAFER DECHUCKING 有权
标题翻译：等离子体浸入式离子植入工艺，具有室温季节和分散层等离子体放电
公开(公告)号：US20090280628A1
公开(公告)日：2009-11-12
申请号：US12503697
申请日：2009-07-15
申请人： Manoj Vellaikal , Kartik Santhanam , Yen B. Ta , Martin A. Hilkene , Matthew D. Scotney-Castle , Canfeng Lai , Peter I. Porshnev , Majeed A. Foad
发明人： Manoj Vellaikal , Kartik Santhanam , Yen B. Ta , Martin A. Hilkene , Matthew D. Scotney-Castle , Canfeng Lai , Peter I. Porshnev , Majeed A. Foad
IPC分类号： H01L21/26
CPC分类号： H01J37/32477 , H01J37/32412 , H01J2237/0213 , H01J2237/022 , H01J2237/16
摘要： In a plasma immersion ion implantation process, the thickness of a pre-implant chamber seasoning layer is increased (to permit implantation of a succession of wafers without replacing the seasoning layer) without loss of wafer clamping electrostatic force due to increased seasoning layer thickness. This is accomplished by first plasma-discharging residual electrostatic charge from the thick seasoning layer. The number of wafers which can be processed using the same seasoning layer is further increased by fractionally supplementing the seasoning layer after each wafer is processed, which may be followed by a brief plasma discharging of the supplemented seasoning before processing the next wafer.
摘要翻译：在等离子体浸没离子注入工艺中，增加了植入前调节层的厚度（允许植入一系列晶片而不更换调味料层），而不会因调节层厚度的增加而损失晶片夹紧静电力。这是通过首先等离子体排出来自厚调味层的残留静电电荷来实现的。在处理每个晶片之后，可以通过分批补充调味层来进一步增加可以使用相同调味料处理的晶片数量，其后可以在加工下一个晶片之前进行补充调味料的短暂等离子体放电。

3. 发明申请

US20090215251A1 PLASMA IMMERSION ION IMPLANTATION PROCESS WITH CHAMBER SEASONING AND SEASONING LAYER PLASMA DISCHARGING FOR WAFER DECHUCKING 失效
公开(公告)号：US20090215251A1
公开(公告)日：2009-08-27
申请号：US12072495
申请日：2008-02-25
申请人： Manoj Vellaikal , Kartik Santhanam , Yen B. Ta , Martin A. Hilkene , Matthew D. Scotney-Castle , Canfeng Lai , Peter I. Porshnev , Majeed A. Foad
发明人： Manoj Vellaikal , Kartik Santhanam , Yen B. Ta , Martin A. Hilkene , Matthew D. Scotney-Castle , Canfeng Lai , Peter I. Porshnev , Majeed A. Foad
IPC分类号： H01L21/62 , G21K5/10
CPC分类号： H01J37/32477 , H01J37/32412 , H01J2237/0213 , H01J2237/022 , H01J2237/16
摘要： In a plasma immersion ion implantation process, the thickness of a pre-implant chamber seasoning layer is increased (to permit implantation of a succession of wafers without replacing the seasoning layer) without loss of wafer clamping electrostatic force due to increased seasoning layer thickness. This is accomplished by first plasma-discharging residual electrostatic charge from the thick seasoning layer. The number of wafers which can be processed using the same seasoning layer is further increased by fractionally supplementing the seasoning layer after each wafer is processed, which may be followed by a brief plasma discharging of the supplemented seasoning before processing the next wafer.

4. 发明申请

US20120302048A1 PRE OR POST-IMPLANT PLASMA TREATMENT FOR PLASMA IMMERSED ION IMPLANTATION PROCESS 审中-公开
标题翻译：用于等离子体离子植入过程的预处理或后植入等离子体处理
公开(公告)号：US20120302048A1
公开(公告)日：2012-11-29
申请号：US13461476
申请日：2012-05-01
申请人： Kartik Santhanam , Yen B. Ta , Matthew D. Scotney-Castle , Manoj Vellaikal , Martin A. Hilkene , Peter I. Porshnev , Majeed A. Foad
发明人： Kartik Santhanam , Yen B. Ta , Matthew D. Scotney-Castle , Manoj Vellaikal , Martin A. Hilkene , Peter I. Porshnev , Majeed A. Foad
IPC分类号： H01L21/265
CPC分类号： H01L21/2236 , H01J37/32412 , H01L21/32155
摘要： Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, the method for implanting ions into a substrate by a plasma immersion ion implantation process includes providing a substrate into a processing chamber, flowing a gas mixture including a hydride dopant gas and a fluorine-containing dopant gas into the processing chamber, wherein the hydride dopant gas comprises P-type hydride dopant gas, N-type hydride dopant gas, or a combination thereof, and the fluorine-containing dopant gas comprises a P-type or N-type dopant atom, generating a plasma from the gas mixture, and co-implanting ions from the gas mixture into a surface of the substrate.
摘要翻译：提供了通过等离子体浸没离子注入工艺将离子注入衬底的方法。在一个实施例中，通过等离子体浸入离子注入工艺将离子注入衬底的方法包括将衬底提供到处理室中，将包括氢化物掺杂剂气体和含氟掺杂剂气体的气体混合物流入处理室，其中氢化物掺杂剂气体包括P型氢化物掺杂气体，N型氢化物掺杂气体或其组合，并且含氟掺杂剂气体包括P型或N型掺杂剂原子，从气体混合物产生等离子体并且将来自气体混合物的离子共注入到衬底的表面中。

5. 发明授权

US08003500B2 Plasma immersion ion implantation process with chamber seasoning and seasoning layer plasma discharging for wafer dechucking 有权
标题翻译：等离子体浸没离子注入工艺与室内调料和调味料层等离子体放电用于晶圆脱扣
公开(公告)号：US08003500B2
公开(公告)日：2011-08-23
申请号：US12503697
申请日：2009-07-15
申请人： Manoj Vellaikal , Kartik Santhanam , Yen B. Ta , Martin A. Hilkene , Matthew D. Scotney-Castle , Canfeng Lai , Peter I. Porshnev , Majeed A. Foad
发明人： Manoj Vellaikal , Kartik Santhanam , Yen B. Ta , Martin A. Hilkene , Matthew D. Scotney-Castle , Canfeng Lai , Peter I. Porshnev , Majeed A. Foad
IPC分类号： H01L21/42
CPC分类号： H01J37/32477 , H01J37/32412 , H01J2237/0213 , H01J2237/022 , H01J2237/16
摘要： In a plasma immersion ion implantation process, the thickness of a pre-implant chamber seasoning layer is increased (to permit implantation of a succession of wafers without replacing the seasoning layer) without loss of wafer clamping electrostatic force due to increased seasoning layer thickness. This is accomplished by first plasma-discharging residual electrostatic charge from the thick seasoning layer. The number of wafers which can be processed using the same seasoning layer is further increased by fractionally supplementing the seasoning layer after each wafer is processed, which may be followed by a brief plasma discharging of the supplemented seasoning before processing the next wafer.
摘要翻译：在等离子体浸没离子注入工艺中，增加了植入前调节层的厚度（允许植入一系列晶片而不更换调味料层），而不会因调节层厚度的增加而损失晶片夹紧静电力。这是通过首先等离子体排出来自厚调味层的残留静电电荷来实现的。在处理每个晶片之后，可以通过分批补充调味层来进一步增加可以使用相同调味料处理的晶片数量，其后可以在加工下一个晶片之前进行补充调味料的短暂等离子体放电。

6. 发明授权

US08501605B2 Methods and apparatus for conformal doping 有权
标题翻译：保形掺杂的方法和装置
公开(公告)号：US08501605B2
公开(公告)日：2013-08-06
申请号：US13188824
申请日：2011-07-22
申请人： Kartik Santhanam , Martin A. Hilkene , Manoj Vellaikal , Mark R. Lee , Matthew D. Scotney-Castle , Peter I. Porshnev
发明人： Kartik Santhanam , Martin A. Hilkene , Manoj Vellaikal , Mark R. Lee , Matthew D. Scotney-Castle , Peter I. Porshnev
IPC分类号： H01L21/22 , H01L21/38
CPC分类号： H01L21/2236 , H01J37/32412 , H01J37/32623 , H01J37/32669 , H01L21/324
摘要： Methods and apparatus for processing a substrate are provided herein. In some embodiments, a method of doping a substrate may include forming a dopant region on a substrate by implanting one or more dopant elements into the dopant region of the substrate using a plasma doping process; forming a cap layer atop the dopant region; annealing the dopant region after forming the cap layer; and removing the cap layer after annealing the dopant region.
摘要翻译：本文提供了用于处理衬底的方法和设备。在一些实施例中，掺杂衬底的方法可以包括通过使用等离子体掺杂工艺将一个或多个掺杂剂元素注入到衬底的掺杂剂区域中在衬底上形成掺杂剂区域; 在掺杂剂区域的顶部形成帽层; 在形成盖层之后退火掺杂剂区域; 并且在退火掺杂剂区域之后去除覆盖层。

7. 发明授权

US07968401B2 Reducing photoresist layer degradation in plasma immersion ion implantation 失效
标题翻译：降低等离子体浸渍离子注入中的光致抗蚀剂层退化
公开(公告)号：US07968401B2
公开(公告)日：2011-06-28
申请号：US12550142
申请日：2009-08-28
申请人： Martin A. Hilkene , Kartik Santhanam , Yen B. Ta , Peter I. Porshnev , Majeed A. Foad
发明人： Martin A. Hilkene , Kartik Santhanam , Yen B. Ta , Peter I. Porshnev , Majeed A. Foad
IPC分类号： H01L21/3065 , H01L21/336 , H01L21/425 , H01L21/8238
CPC分类号： H01L21/2236 , H01L21/31138
摘要： A method of plasma immersion ion implantation of a workpiece having a photoresist mask on its top surface prevents photoresist failure from carbonization of the photoresist. The method includes performing successive ion implantation sub-steps, each of the ion implantation sub-steps having a time duration over which only a fractional top portion of the photoresist layer is damaged by ion implantation. After each one of the successive ion implantation sub-steps, the fractional top portion of the photoresist is removed while leaving the remaining portion of the photoresist layer in place by performing an ashing sub-step. The number of the successive ion implantation sub-steps is sufficient to reach a predetermined ion implantation dose in the workpiece.
摘要翻译：在其顶表面上具有光致抗蚀剂掩模的工件的等离子体浸没离子注入的方法防止光致抗蚀剂从光致抗蚀剂的碳化失效。该方法包括执行连续的离子注入子步骤，每个离子注入子步骤具有仅通过离子注入损坏光致抗蚀剂层的仅部分顶部的持续时间。在连续离子注入子步骤中的每一个之后，去除光致抗蚀剂的分数顶部，同时通过执行灰化子步骤留下光致抗蚀剂层的剩余部分就位。连续离子注入子步骤的数量足以在工件中达到预定的离子注入剂量。

8. 发明申请

US20090162996A1 REMOVAL OF SURFACE DOPANTS FROM A SUBSTRATE 有权
标题翻译：从基板上去除表面掺杂物
公开(公告)号：US20090162996A1
公开(公告)日：2009-06-25
申请号：US11963034
申请日：2007-12-21
申请人： Kartik Ramaswamy , Kenneth S. Collins , Biagio Gallo , Hiroji Hanawa , Majeed A. Foad , Martin A. Hilkene , Kartik Santhanam , Matthew D. Scotney-Castle
发明人： Kartik Ramaswamy , Kenneth S. Collins , Biagio Gallo , Hiroji Hanawa , Majeed A. Foad , Martin A. Hilkene , Kartik Santhanam , Matthew D. Scotney-Castle
IPC分类号： H01L21/263
CPC分类号： H01L21/2254 , H01L21/2253
摘要： A method and apparatus for removing excess dopant from a doped substrate is provided. In one embodiment, a substrate is doped by surfaced deposition of dopant followed by formation of a capping layer and thermal diffusion drive-in. A reactive etchant mixture is provided to the process chamber, with optional plasma, to etch away the capping layer and form volatile compounds by reacting with excess dopant. In another embodiment, a substrate is doped by energetic implantation of dopant. A reactive gas mixture is provided to the process chamber, with optional plasma, to remove excess dopant adsorbed on the surface and high-concentration dopant near the surface by reacting with the dopant to form volatile compounds. The reactive gas mixture may be provided during thermal treatment, or it may be provided before or after at temperatures different from the thermal treatment temperature. The volatile compounds are removed. Substrates so treated do not form toxic compounds when stored or transported outside process equipment.
摘要翻译：提供了用于从掺杂衬底去除多余掺杂剂的方法和装置。在一个实施例中，通过表面沉积掺杂剂掺杂衬底，然后形成覆盖层和热扩散驱入。将反应性蚀刻剂混合物与任选的等离子体提供给处理室，以通过与多余的掺杂剂反应来蚀刻掉覆盖层并形成挥发性化合物。在另一个实施例中，通过掺杂剂的高能注入来掺杂衬底。通过与掺杂剂反应形成挥发性化合物，将具有任选等离子体的反应气体混合物提供给处理室，以除去吸附在表面上的多余掺杂物和表面附近的高浓度掺杂剂。反应性气体混合物可以在热处理期间提供，或者可以在与热处理温度不同的温度之前或之后提供。除去挥发性化合物。如此处理的基材在储存或运输到工艺设备外时不会形成有毒化合物。

9. 发明授权

US08354035B2 Method for removing implanted photo resist from hard disk drive substrates 有权
标题翻译：从硬盘驱动器基板上去除植入光刻胶的方法
公开(公告)号：US08354035B2
公开(公告)日：2013-01-15
申请号：US12821400
申请日：2010-06-23
申请人： Martin A. Hilkene , Majeed A. Foad , Matthew D. Scotney-Castle , Roman Gouk , Steven Verhaverbeke , Peter I. Porshnev
发明人： Martin A. Hilkene , Majeed A. Foad , Matthew D. Scotney-Castle , Roman Gouk , Steven Verhaverbeke , Peter I. Porshnev
IPC分类号： B44C1/22
CPC分类号： G11B5/84 , G03F7/427
摘要： A method of removing resist material from a substrate having a magnetically active surface is provided. The substrate is disposed in a processing chamber and exposed to a fluorine-containing plasma formed from a gas mixture having a reagent, an oxidizing agent, and a reducing agent. A cleaning agent may also be included. The substrate may be cooled by back-side cooling or by a cooling process wherein a cooling medium is provided to the processing chamber while the plasma treatment is suspended. Substrates may be flipped over for two-sided processing, and multiple substrates may be processed concurrently.
摘要翻译：提供了从具有磁性活性表面的基板去除抗蚀剂材料的方法。将基板设置在处理室中并暴露于由具有试剂，氧化剂和还原剂的气体混合物形成的含氟等离子体。还可以包括清洁剂。衬底可以通过背面冷却或通过冷却过程冷却，其中在等离子体处理被暂停时将冷却介质提供给处理室。衬底可以翻转以进行双面处理，并且可以同时处理多个衬底。

10. 发明申请

US20110006034A1 METHOD FOR REMOVING IMPLANTED PHOTO RESIST FROM HARD DISK DRIVE SUBSTRATES 有权
标题翻译：从硬盘驱动器基板移除嵌入式照相器的方法
公开(公告)号：US20110006034A1
公开(公告)日：2011-01-13
申请号：US12821400
申请日：2010-06-23
申请人： Martin A. Hilkene , Majeed A. Foad , Matthew D. Scotney-Castle , Roman Gouk , Steven Verhaverbeke , Peter I. Porshnev
发明人： Martin A. Hilkene , Majeed A. Foad , Matthew D. Scotney-Castle , Roman Gouk , Steven Verhaverbeke , Peter I. Porshnev
IPC分类号： G11B5/84
CPC分类号： G11B5/84 , G03F7/427
摘要： A method of removing resist material from a substrate having a magnetically active surface is provided. The substrate is disposed in a processing chamber and exposed to a fluorine-containing plasma formed from a gas mixture having a reagent, an oxidizing agent, and a reducing agent. A cleaning agent may also be included. The substrate may be cooled by back-side cooling or by a cooling process wherein a cooling medium is provided to the processing chamber while the plasma treatment is suspended. Substrates may be flipped over for two-sided processing, and multiple substrates may be processed concurrently.
摘要翻译：提供了从具有磁性活性表面的基板去除抗蚀剂材料的方法。将基板设置在处理室中并暴露于由具有试剂，氧化剂和还原剂的气体混合物形成的含氟等离子体。还可以包括清洁剂。衬底可以通过背面冷却或通过冷却过程冷却，其中在等离子体处理被暂停时将冷却介质提供给处理室。衬底可以翻转以进行双面处理，并且可以同时处理多个衬底。

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