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1. 发明授权

US09111629B2 Smart charge pump configuration for non-volatile memories 有权
标题翻译：智能电荷泵配置用于非易失性存储器
公开(公告)号：US09111629B2
公开(公告)日：2015-08-18
申请号：US13441335
申请日：2012-04-06
申请人： Jeffrey C. Cunningham , Karthik Ramanan , Ross S. Scouller , Ronald J. Syzdek
发明人： Jeffrey C. Cunningham , Karthik Ramanan , Ross S. Scouller , Ronald J. Syzdek
IPC分类号： G11C16/04 , G11C16/30 , G11C5/14 , G11C8/08 , G11C16/34
CPC分类号： G11C16/30 , G11C5/145 , G11C8/08 , G11C16/3454
摘要： A semiconductor memory device includes a non-volatile memory, a memory controller, and a charge pump system. The memory controller establishes first parameters for a first programming cycle of a first plurality of memory cells of the non-volatile memory prior to the first programming cycle being performed. The charge pump system includes a plurality of charge pumps and provides a first programming pulse for use in performing the first program cycle. The first programming pulse is provided by selecting, according to the first parameters, which of the plurality of charge pumps are to be enabled during the first program cycle and which are to be disabled during the first program cycle.
摘要翻译：半导体存储器件包括非易失性存储器，存储器控制器和电荷泵系统。存储器控制器在执行第一编程周期之前为非易失性存储器的第一多个存储器单元的第一编程周期建立第一参数。电荷泵系统包括多个电荷泵并提供用于执行第一程序循环的第一编程脉冲。第一编程脉冲通过根据第一参数选择在第一编程周期期间启用多个电荷泵中的哪一个并在第一编程周期期间被禁用来提供。

2. 发明授权

US08704587B2 Configurable multistage charge pump using a supply detect scheme 有权
标题翻译：可配置的多级电荷泵使用电源检测方案
公开(公告)号：US08704587B2
公开(公告)日：2014-04-22
申请号：US13555848
申请日：2012-07-23
申请人： Karthik Ramanan , Jeffrey C. Cunningham , Ronald J. Syzdek
发明人： Karthik Ramanan , Jeffrey C. Cunningham , Ronald J. Syzdek
IPC分类号： G05F1/62 , H02M3/18
CPC分类号： G11C16/30 , G11C5/145 , H02M3/07 , H02M2001/0022
摘要： A configurable multistage charge pump including multiple pumpcells, at least one bypass switch and control logic. The pumpcells are coupled together in series including a first pumpcell receiving an input voltage and at least one remaining pumpcell including a last pumpcell which generates an output voltage. Each bypass switch is coupled to selectively provide the input voltage to a pumpcell input of a corresponding one of the remaining pumpcells. The control logic is configured to determine one of multiple voltage ranges of the input voltage, to enable each pumpcell for a first voltage range and to disable and bypass at least one pumpcell for at least one other voltage range. A method of operating a multistage charge pump including detecting an input voltage, selecting a voltage range based on an input voltage, and enabling a number of cascaded pumpcells corresponding to the selected voltage range.
摘要翻译：一个可配置的多级电荷泵，包括多个泵浦单元，至少一个旁路开关和控制逻辑。泵浦单元串联连接在一起，包括接收输入电压的第一泵浦单元和至少一个包括产生输出电压的最后一个泵浦单元的剩余泵浦单元。每个旁路开关被耦合以选择性地将输入电压提供给相应的剩余泵浦单元的泵单元输入。控制逻辑被配置为确定输入电压的多个电压范围中的一个，以使得每个泵浦电池能够达到第一电压范围，并且在至少一个其它电压范围内禁用和旁路至少一个泵浦电池。一种操作多级电荷泵的方法，包括检测输入电压，基于输入电压选择电压范围，以及使能与选定电压范围对应的多个级联泵浦电池。

3. 发明申请

US20140022005A1 CONFIGURABLE MULTISTAGE CHARGE PUMP USING A SUPPLY DETECT SCHEME 有权
标题翻译：可配置多功能充电泵使用电源检测方案
公开(公告)号：US20140022005A1
公开(公告)日：2014-01-23
申请号：US13555848
申请日：2012-07-23
申请人： Karthik Ramanan , Jeffrey C. Cunningham , Ronald J. Syzdek
发明人： Karthik Ramanan , Jeffrey C. Cunningham , Ronald J. Syzdek
IPC分类号： G05F1/02
CPC分类号： G11C16/30 , G11C5/145 , H02M3/07 , H02M2001/0022
摘要： A configurable multistage charge pump including multiple pumpcells, at least one bypass switch and control logic. The pumpcells are coupled together in series including a first pumpcell receiving an input voltage and at least one remaining pumpcell including a last pumpcell which generates an output voltage. Each bypass switch is coupled to selectively provide the input voltage to a pumpcell input of a corresponding one of the remaining pumpcells. The control logic is configured to determine one of multiple voltage ranges of the input voltage, to enable each pumpcell for a first voltage range and to disable and bypass at least one pumpcell for at least one other voltage range. A method of operating a multistage charge pump including detecting an input voltage, selecting a voltage range based on an input voltage, and enabling a number of cascaded pumpcells corresponding to the selected voltage range.
摘要翻译：一个可配置的多级电荷泵，包括多个泵浦单元，至少一个旁路开关和控制逻辑。泵浦单元串联连接在一起，包括接收输入电压的第一泵浦单元和至少一个包括产生输出电压的最后一个泵浦单元的剩余泵浦单元。每个旁路开关被耦合以选择性地将输入电压提供给相应的剩余泵浦单元的泵单元输入。控制逻辑被配置为确定输入电压的多个电压范围中的一个，以使得每个泵浦电池能够达到第一电压范围，并且在至少一个其它电压范围内禁用和旁路至少一个泵浦电池。一种操作多级电荷泵的方法，包括检测输入电压，基于输入电压选择电压范围，以及使能与选定电压范围对应的多个级联泵浦电池。

4. 发明申请

US20130265828A1 SMART CHARGE PUMP CONFIGURATION FOR NON-VOLATILE MEMORIES 有权
标题翻译：智能充电泵配置非易失性存储器
公开(公告)号：US20130265828A1
公开(公告)日：2013-10-10
申请号：US13441335
申请日：2012-04-06
申请人： Jeffrey C. Cunningham , Karthik Ramanan , Ross S. Scouller , Ronald J. Syzdek
发明人： Jeffrey C. Cunningham , Karthik Ramanan , Ross S. Scouller , Ronald J. Syzdek
IPC分类号： G11C16/10
CPC分类号： G11C16/30 , G11C5/145 , G11C8/08 , G11C16/3454
摘要： A semiconductor memory device includes a non-volatile memory, a memory controller, and a charge pump system. The memory controller establishes first parameters for a first programming cycle of a first plurality of memory cells of the non-volatile memory prior to the first programming cycle being performed. The charge pump system includes a plurality of charge pumps and provides a first programming pulse for use in performing the first program cycle. The first programming pulse is provided by selecting, according to the first parameters, which of the plurality of charge pumps are to be enabled during the first program cycle and which are to be disabled during the first program cycle.
摘要翻译：半导体存储器件包括非易失性存储器，存储器控制器和电荷泵系统。存储器控制器在执行第一编程周期之前为非易失性存储器的第一多个存储器单元的第一编程周期建立第一参数。电荷泵系统包括多个电荷泵并提供用于执行第一程序循环的第一编程脉冲。第一编程脉冲通过根据第一参数选择在第一编程周期期间启用多个电荷泵中的哪一个并在第一编程周期期间被禁用来提供。

5. 发明申请

US20120176844A1 READ CONDITIONS FOR A NON-VOLATILE MEMORY (NVM) 有权
标题翻译：阅读非挥发性记忆条件（NVM）
公开(公告)号：US20120176844A1
公开(公告)日：2012-07-12
申请号：US12985724
申请日：2011-01-06
申请人： Jeffrey C. Cunningham , Thomas D. Cook , Stephen F. McGinty , Ronald J. Syzdek
发明人： Jeffrey C. Cunningham , Thomas D. Cook , Stephen F. McGinty , Ronald J. Syzdek
IPC分类号： G11C16/06
CPC分类号： G11C16/28 , G11C11/14 , G11C11/5642 , G11C16/10 , G11C16/3418
摘要： A method and memory are provided for determining a read reference level for a plurality of non-volatile memory cells. The method includes: performing a program operation of the plurality of non-volatile memory cells; determining a program level of a least programmed memory cell of the plurality of memory cells; performing an erase operation of the plurality of non-volatile memory cells; determining an erase level of a least erased memory cell of the plurality of memory cells; determining an operating window between the program level and the erase level; and setting the read reference level to be a predetermined offset from the erase level if the operating window is determined to compare favorably to a predetermined value. The memory includes registers for storing the program level and the erase level.
摘要翻译：提供了一种用于确定多个非易失性存储器单元的读取参考电平的方法和存储器。该方法包括：执行多个非易失性存储单元的编程操作; 确定所述多个存储器单元中的最小程序存储单元的程序级; 执行所述多个非易失性存储单元的擦除操作; 确定所述多个存储器单元中最少擦除的存储单元的擦除电平; 确定程序级和擦除级之间的操作窗口; 并且如果确定操作窗口与预定值相比较，则将读取参考电平设置为与擦除电平的预定偏移。存储器包括用于存储程序电平和擦除电平的寄存器。

6. 发明授权

US08310877B2 Read conditions for a non-volatile memory (NVM) 有权
标题翻译：读取非易失性存储器（NVM）的条件
公开(公告)号：US08310877B2
公开(公告)日：2012-11-13
申请号：US12985724
申请日：2011-01-06
申请人： Jeffrey C. Cunningham , Thomas D. Cook , Stephen F. McGinty , Ronald J. Syzdek
发明人： Jeffrey C. Cunningham , Thomas D. Cook , Stephen F. McGinty , Ronald J. Syzdek
IPC分类号： G11C16/04
CPC分类号： G11C16/28 , G11C11/14 , G11C11/5642 , G11C16/10 , G11C16/3418
摘要： A method and memory are provided for determining a read reference level for a plurality of non-volatile memory cells. The method includes: performing a program operation of the plurality of non-volatile memory cells; determining a program level of a least programmed memory cell of the plurality of memory cells; performing an erase operation of the plurality of non-volatile memory cells; determining an erase level of a least erased memory cell of the plurality of memory cells; determining an operating window between the program level and the erase level; and setting the read reference level to be a predetermined offset from the erase level if the operating window is determined to compare favorably to a predetermined value. The memory includes registers for storing the program level and the erase level.
摘要翻译：提供了一种用于确定多个非易失性存储器单元的读取参考电平的方法和存储器。该方法包括：执行多个非易失性存储单元的编程操作; 确定所述多个存储器单元中的最小程序存储单元的程序级; 执行所述多个非易失性存储单元的擦除操作; 确定所述多个存储器单元中最少擦除的存储单元的擦除电平; 确定程序级和擦除级之间的操作窗口; 并且如果确定操作窗口与预定值相比较，则将读取参考电平设置为与擦除电平的预定偏移。存储器包括用于存储程序电平和擦除电平的寄存器。

7. 发明授权

US09013927B1 Sector-based regulation of program voltages for non-volatile memory (NVM) systems 有权
标题翻译：基于部门的非易失性存储器（NVM）系统的程序电压调节
公开(公告)号：US09013927B1
公开(公告)日：2015-04-21
申请号：US14050962
申请日：2013-10-10
申请人： Jeffrey C. Cunningham , Ross S. Scouller , Ronald J. Syzdek
发明人： Jeffrey C. Cunningham , Ross S. Scouller , Ronald J. Syzdek
IPC分类号： G11C16/06 , G11C16/10
CPC分类号： G11C29/021 , G11C5/145 , G11C8/12 , G11C16/08 , G11C16/12 , G11C16/30 , G11C29/028 , G11C2029/1202
摘要： Methods and systems are disclosed for sector-based regulation of program voltages for non-volatile memory (NVM) systems. The disclosed embodiments regulate program voltages for NVM cells based upon feedback signals generated from sector return voltages that are associated with program voltage drivers that are driving program voltages to NVM cells within selected sectors an NVM array. As such, drops in program voltage levels due to IR (current-resistance) voltage losses in program voltage distribution lines are effectively addressed. This sector-based regulation of the program voltage effectively maintains the desired program voltage at the cells being programmed regardless of the sector being accessed for programming and the number of cells being programmed. Sector return voltages can also be used along with local program voltages to provide two-step feedback regulation for the voltage generation circuitry. Test mode configurations can also be provided using test input and/or output pads.
摘要翻译：公开了用于非易失性存储器（NVM）系统的用于基于扇区的程序电压调节的方法和系统。所公开的实施例基于从扇区返回电压产生的反馈信号来调节NVM单元的编程电压，所述反馈信号与将编程电压相关联的程序电压驱动到选定扇区内的NVM单元NVM阵列。因此，编程电压分配线中的IR（电流 - 电阻）电压损失导致的编程电压电平下降被有效地解决。程序电压的基于扇区的调节在编程的单元有效地保持所需的编程电压，而不管正在被访问的扇区用于编程和正被编程的单元的数量。扇区返回电压也可以与本地编程电压一起使用，为电压产生电路提供两步反馈调节。也可以使用测试输入和/或输出焊盘提供测试模式配置。

8. 发明申请

US20150103602A1 SECTOR-BASED REGULATION OF PROGRAM VOLTAGES FOR NON-VOLATILE MEMORY (NVM) SYSTEMS 有权
标题翻译：针对非易失性存储器（NVM）系统的程序电压的基于行业的规范
公开(公告)号：US20150103602A1
公开(公告)日：2015-04-16
申请号：US14050962
申请日：2013-10-10
申请人： Jeffrey C. Cunningham , Ross S. Scouller , Ronald J. Syzdek
发明人： Jeffrey C. Cunningham , Ross S. Scouller , Ronald J. Syzdek
IPC分类号： G11C16/10
CPC分类号： G11C29/021 , G11C5/145 , G11C8/12 , G11C16/08 , G11C16/12 , G11C16/30 , G11C29/028 , G11C2029/1202
摘要： Methods and systems are disclosed for sector-based regulation of program voltages for non-volatile memory (NVM) systems. The disclosed embodiments regulate program voltages for NVM cells based upon feedback signals generated from sector return voltages that are associated with program voltage drivers that are driving program voltages to NVM cells within selected sectors an NVM array. As such, drops in program voltage levels due to IR (current-resistance) voltage losses in program voltage distribution lines are effectively addressed. This sector-based regulation of the program voltage effectively maintains the desired program voltage at the cells being programmed regardless of the sector being accessed for programming and the number of cells being programmed. Sector return voltages can also be used along with local program voltages to provide two-step feedback regulation for the voltage generation circuitry. Test mode configurations can also be provided using test input and/or output pads.
摘要翻译：公开了用于非易失性存储器（NVM）系统的用于基于扇区的程序电压调节的方法和系统。所公开的实施例基于从扇区返回电压产生的反馈信号来调节NVM单元的编程电压，所述反馈信号与将编程电压相关联的程序电压驱动到选定扇区内的NVM单元NVM阵列。因此，编程电压分配线中的IR（电流 - 电阻）电压损失导致的编程电压电平下降被有效地解决。程序电压的基于扇区的调节在编程的单元有效地保持所需的编程电压，而不管正在被访问的扇区用于编程以及正被编程的单元的数量。扇区返回电压也可以与本地编程电压一起使用，为电压产生电路提供两步反馈调节。也可以使用测试输入和/或输出焊盘提供测试模式配置。

9. 发明申请

US20140354364A1 OSCILLATOR WITH STARTUP CIRCUITRY 有权
标题翻译：振荡器与启动电路
公开(公告)号：US20140354364A1
公开(公告)日：2014-12-04
申请号：US13907068
申请日：2013-05-31
申请人： Gilles J. Muller , Jeffrey C. Cunningham , Karthik Ramanan
发明人： Gilles J. Muller , Jeffrey C. Cunningham , Karthik Ramanan
IPC分类号： H03L7/06
CPC分类号： H03L7/06 , H03B5/06 , H03B2200/0094 , H03K3/014 , H03K3/0231 , H03L1/02 , H03L3/00 , H03L5/00
摘要： An oscillator that includes a first source current leg and first sink current leg to source current and sink current, respectively, during a startup mode of oscillator operation. The oscillator includes a second source current leg and a second sink current leg to source current and sink current, respectively, during a second mode of oscillator operation.
摘要翻译：振荡器，其包括在振荡器操作的启动模式期间分别源电流和吸收电流的第一源电流支路和第一汇流电流支路。振荡器包括第二源极电流支路和第二吸收电流支路，以分别在第二振荡器操作模式期间分别提供电流和吸收电流。

10. 发明授权

US08310300B2 Charge pump having ramp rate control 有权
标题翻译：电荷泵具有斜坡率控制
公开(公告)号：US08310300B2
公开(公告)日：2012-11-13
申请号：US12870464
申请日：2010-08-27
申请人： Thomas D. Cook , Jeffrey C. Cunningham , Karthik Ramanan
发明人： Thomas D. Cook , Jeffrey C. Cunningham , Karthik Ramanan
IPC分类号： G05F1/10 , G05F3/02
CPC分类号： H02M3/07
摘要： A charge pump includes a first counter and a pump stage. The first counter has a control input for receiving a control signal, and an output for providing a first count value. The first count value is incremented in response to the control signal being a first logic state and the first count value is decremented in response to the control signal being a second logic state. The pump stage has a variable capacitor. The variable capacitor has a control input coupled to the output of the first counter for receiving the first count value. The capacitance value of the variable capacitor is changed in response to the first count value changing. The capacitance value is for determining a ramp-up rate of an output voltage at an output of the charge pump.
摘要翻译：电荷泵包括第一计数器和泵级。第一计数器具有用于接收控制信号的控制输入和用于提供第一计数值的输出。第一计数值响应于控制信号是第一逻辑状态而递增，并且第一计数值响应于控制信号是第二逻辑状态而递减。泵级具有可变电容器。可变电容器具有耦合到第一计数器的输出的控制输入，用于接收第一计数值。可变电容器的电容值响应于第一计数值变化而改变。电容值用于确定电荷泵输出处的输出电压的上升速率。

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