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    • 1. 发明申请
    • 276-PIN BUFFERED MEMORY MODULE WITH ENHANCED MEMORY SYSTEM INTERCONNECT AND FEATURES
    • 具有增强的存储器系统的276引脚缓冲存储器模块互连和特性
    • US20100005220A1
    • 2010-01-07
    • US12166208
    • 2008-07-01
    • Karl D. LoughnerKevin C. GowerCharles A. KilmerWarren E. Maule
    • Karl D. LoughnerKevin C. GowerCharles A. KilmerWarren E. Maule
    • G06F12/06G06F12/10
    • G06F13/426
    • A memory module that includes a first group of memory devices arranged in one or more ranks and a second group of memory devices arranged in one or more ranks. The memory module also includes a first and second port, wherein the first port is operable simultaneously with and independently of the second port. The memory module further includes a first memory device bus in communication with the first port and the first group of memory devices, and a second memory device bus in communication with the second port and the second group of memory devices. The memory module further includes a hub device configured to re-drive information in a cascade interconnect system. The hub device includes logic for reading data from and writing data to the ranks of memory devices via the first and second ports and the first and second memory device buses.
    • 一种存储器模块,其包括以一个或多个等级排列的第一组存储器件和布置在一个或多个等级中的第二组存储器件。 存储器模块还包括第一和第二端口,其中第一端口可与第二端口同时且独立于第二端口操作。 存储器模块还包括与第一端口和第一组存储器设备通信的第一存储器设备总线,以及与第二端口和第二组存储器设备通信的第二存储器设备总线。 存储器模块还包括被配置为重新驱动级联互连系统中的信息的集线器设备。 集线器设备包括用于经由第一和第二端口以及第一和第二存储器设备总线从存储器设备的级别读取数据并将数据写入存储器设备的逻辑。