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    • 2. 发明授权
    • Pedestal with integral shield
    • 带整体护罩的基座
    • US06726805B2
    • 2004-04-27
    • US10128983
    • 2002-04-24
    • Karl BrownVineet MehtaSee-Eng PhanSemyon SherstinskyAllen Lau
    • Karl BrownVineet MehtaSee-Eng PhanSemyon SherstinskyAllen Lau
    • H05H100
    • H01L21/67069H01J37/321H01J37/32623
    • Generally, a substrate support member for supporting a substrate is provided. In one embodiment, a substrate support member for supporting a substrate includes a body coupled to a lower shield. The body has an upper surface adapted to support the substrate and a lower surface. The lower shield has a center portion and a lip. The lip is disposed radially outward of the body and projects towards a plane defined by the first surface. The lip is disposed in a spaced-apart relation from the body. The lower shield is adapted to interface with an upper shield disposed in a processing chamber to define a labyrinth gap that substantially prevents plasma from migrating below the member. The lower shield, in another embodiment, provides the plasma with a short RF ground return path.
    • 通常,提供了用于支撑衬底的衬底支撑构件。 在一个实施例中,用于支撑衬底的衬底支撑构件包括联接到下屏蔽的主体。 主体具有适于支撑基板和下表面的上表面。 下屏蔽件具有中心部分和唇部。 唇缘设置在身体的径向外侧并朝向由第一表面限定的平面突出。 唇缘与身体间隔开设置。 下屏蔽适于与设置在处理室中的上屏蔽接口以限定基本上防止等离子体迁移到构件下方的迷宫间隙。 在另一个实施例中,下屏蔽为等离子体提供短的RF接地返回路径。
    • 3. 发明授权
    • Flat style coil for improved precision etch uniformity
    • 扁平型线圈,可提高精密蚀刻均匀性
    • US07513971B2
    • 2009-04-07
    • US10387948
    • 2003-03-12
    • Karl BrownVineet MehtaSee-Eng Phan
    • Karl BrownVineet MehtaSee-Eng Phan
    • H01L21/306C23C16/00
    • H01J37/321
    • An RF coil for a plasma etch chamber is provided in which the RF coil is substantially flat over a portion of at least one turn of the coil. In one embodiment, each turn of the coil is substantially flat over a majority of each turn. In one embodiment of the present inventions, each turn of the coil is substantially flat over approximately 300 degrees of the turn. In the final approximate 60 degrees of the turn, the coil is sloped down to the next turn. Each turn thus comprises a substantially flat portion in combination with a sloped portion interconnecting the turn to the next adjacent turn. In one embodiment, the RF coil having turns with substantially flat portions is generally cylindrical. Other shapes are contemplated such as a dome shape. In some applications such as an RF plasma etch reactor, it is believed that providing an RF coil having turns comprising flat portions with sloped portions interconnecting the flat portions can improve uniformity of the etch process.
    • 提供了一种用于等离子体蚀刻室的RF线圈,其中RF线圈在线圈的至少一圈的一部分上基本上是平坦的。 在一个实施例中,线圈的每个匝在每匝的大部分上基本平坦。 在本发明的一个实施例中,线圈的每一圈在转弯的大约300度处基本平坦。 在最终大约60度的转弯中,线圈向下倾斜到下一回合。 因此,每个转弯包括基本平坦的部分,与将转弯相互连接到下一个相邻转弯的倾斜部分组合。 在一个实施例中,具有基本平坦部分的匝的RF线圈通常为圆柱形。 可以想到其它形状,例如圆顶形状。 在诸如RF等离子体蚀刻反应器的一些应用中,据信提供具有包括平坦部分的匝的RF线圈,其具有互连平坦部分的倾斜部分可以提高蚀刻工艺的均匀性。
    • 4. 发明授权
    • Pedestal with integral shield
    • 带整体护罩的基座
    • US07252737B2
    • 2007-08-07
    • US10819891
    • 2004-04-06
    • Karl BrownVineet MehtaSee-Eng PhanSemyon SherstinskyAllen Lau
    • Karl BrownVineet MehtaSee-Eng PhanSemyon SherstinskyAllen Lau
    • C23C16/00C23F1/00H01L21/306
    • H01L21/67069H01J37/321H01J37/32623
    • Generally, a substrate support member for supporting a substrate is provided. In one embodiment, a substrate support member for supporting a substrate includes a body coupled to a lower shield. The body has an upper surface adapted to support the substrate and a lower surface. The lower shield has a center portion and a lip. The lip is disposed radially outward of the body and projects towards a plane defined by the first surface. The lip is disposed in a spaced-apart relation from the body. The lower shield is adapted to interface with an upper shield disposed in a processing chamber to define a labyrinth gap that substantially prevents plasma from migrating below the member. The lower shield, in another embodiment, provides the plasma with a short RF ground return path.
    • 通常,提供了用于支撑衬底的衬底支撑构件。 在一个实施例中,用于支撑衬底的衬底支撑构件包括联接到下屏蔽的主体。 主体具有适于支撑基板和下表面的上表面。 下屏蔽件具有中心部分和唇部。 唇缘设置在身体的径向外侧并朝向由第一表面限定的平面突出。 唇缘与身体间隔开设置。 下屏蔽适于与设置在处理室中的上屏蔽接口以限定基本上防止等离子体迁移到构件下方的迷宫间隙。 在另一个实施例中,下屏蔽为等离子体提供短的RF接地返回路径。
    • 6. 发明授权
    • Lower pedestal shield
    • 下座垫
    • US06837968B2
    • 2005-01-04
    • US10668529
    • 2003-09-23
    • Karl BrownVineet MehtaSee-Eng PhanSemyon SherstinskyAllen Lau
    • Karl BrownVineet MehtaSee-Eng PhanSemyon SherstinskyAllen Lau
    • H01J37/32H01L21/00H05H1/00C23C16/00
    • H01L21/67069H01J37/321H01J37/32623
    • Generally, a substrate support member for supporting a substrate is provided. In one embodiment, a substrate support member for supporting a substrate includes a body coupled to a lower shield. The body has an upper surface adapted to support the substrate and a lower surface. The lower shield has a center portion and a lip. The lip is disposed radially outward of the body and projects towards a plane defined by the first surface. The lip is disposed in a spaced-apart relation from the body. The lower shield is adapted to interface with an upper shield disposed in a processing chamber to define a labyrinth gap that substantially prevents plasma from migrating below the member. The lower shield, in another embodiment, provides the plasma with a short RF ground return path.
    • 通常,提供了用于支撑衬底的衬底支撑构件。 在一个实施例中,用于支撑衬底的衬底支撑构件包括联接到下屏蔽的主体。 主体具有适于支撑基板和下表面的上表面。 下屏蔽件具有中心部分和唇部。 唇缘设置在身体的径向外侧并朝向由第一表面限定的平面突出。 唇缘与身体间隔开设置。 下屏蔽适于与设置在处理室中的上屏蔽接口以限定基本上防止等离子体迁移到构件下方的迷宫间隙。 在另一个实施例中,下屏蔽为等离子体提供短的RF接地返回路径。
    • 9. 发明申请
    • Physical vapor deposition plasma reactor with RF source power applied to the target
    • 具有RF源功率的物理气相沉积等离子体反应器施加到目标
    • US20060169584A1
    • 2006-08-03
    • US11222245
    • 2005-09-07
    • Karl BrownJohn PipitoneVineet Mehta
    • Karl BrownJohn PipitoneVineet Mehta
    • C23C14/00
    • H01J37/3408C23C14/046C23C14/345C23C14/358H01J37/32082H01J37/32706H01L21/2855H01L21/76843H01L21/76844
    • A physical vapor deposition reactor includes a vacuum chamber including a sidewall, a ceiling and a wafer support pedestal near a floor of the chamber, a vacuum pump coupled to the chamber, a process gas inlet coupled to the chamber and a process gas source coupled to the process gas inlet. A metal sputter target is located at the ceiling and a high voltage D.C. source coupled to the sputter target. An RF plasma source power generator is coupled to the metal sputter target and has a frequency suitable for exciting kinetic electrons. Preferably, the wafer support pedestal comprises an electrostatic chuck and an RF plasma bias power generator is coupled to the wafer support pedestal having a frequency suitable for coupling energy to plasma ions. Preferably, a solid metal RF feed rod having a diameter in excess of about 0.5 inches engages the metal sputter target, the RF feed rod extending axially above the target through the ceiling and being coupled to the RF plasma source power generator.
    • 物理气相沉积反应器包括真空室,其包括侧壁,天花板和靠近室底部的晶片支撑台座,耦合到该室的真空泵,耦合到该室的工艺气体入口以及耦合到 工艺气体入口。 金属溅射靶位于天花板和耦合到溅射靶的高电压源极。 RF等离子体源功率发生器耦合到金属溅射靶并且具有适于激发动电子的频率。 优选地,晶片支撑基座包括静电卡盘,并且RF等离子体偏置功率发生器耦合到具有适于将能量耦合到等离子体离子的频率的晶片支撑基座。 优选地,具有超过约0.5英寸的直径的固体金属RF馈送棒与金属溅射靶接合,RF馈送杆通过天花板轴向延伸到目标上方并且耦合到RF等离子体源发电机。
    • 10. 发明申请
    • Method of performing physical vapor deposition with RF plasma source power applied to the target using a magnetron
    • 使用磁控管施加到靶的RF等离子体源功率进行物理气相沉积的方法
    • US20060191876A1
    • 2006-08-31
    • US11222248
    • 2005-09-07
    • Karl BrownJohn PipitoneVineet Mehta
    • Karl BrownJohn PipitoneVineet Mehta
    • B23K15/00
    • H01J37/3408C23C14/046C23C14/345C23C14/358H01J37/32082H01J37/32706H01L21/2855H01L21/76843H01L21/76844
    • The invention concerns a method of performing physical vapor deposition in a reactor chamber on a workpiece positioned on a workpiece support facing the metal sputter target. The method includes sputtering atoms from the metal sputter target by applying a low level of target bias power to the metal sputter target to produce a correspondingly low metal deposition rate on the workpiece. The method further includes ionizing the atoms sputtered from the metal sputter target to an ionization fraction in excess of about 50% by applying a high level of VHF source power to the metal sputter target through a solid large diameter RF feed rod that engages the metal sputter target. The low level of target bias power can be as low as about 500 Watts although it may range up to about 2500 Watts. Preferably, the target bias power is D.C. power. The RF feed rod may be threadably engaged into a receptacle in the center of a top surface of the metal sputter target. Preferably, the method further includes electrostatically clamping the workpiece to the workpiece support.
    • 本发明涉及在位于面向金属溅射靶的工件支架上的工件上的反应器室中进行物理气相沉积的方法。 该方法包括通过向金属溅射靶施加低水平的目标偏压功率来从金属溅射靶溅射原子,以在工件上产生相应较低的金属沉积速率。 该方法还包括通过将金属溅射物质接合的固体大直径RF进料棒,通过向金属溅射靶施加高水平的VHF源功率,将从金属溅射靶溅射的原子离子化成电离分数超过约50% 目标。 目标偏置功率的低水平可以低至约500瓦,尽管其范围可高达约2500瓦。 优选地,目标偏置功率为直流功率。 RF馈送杆可以螺纹地接合在金属溅射靶的顶表面的中心的插座中。 优选地,该方法还包括将工件静电夹持到工件支撑件。