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1. 发明申请

US20090091040A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR STORAGE DEVICE 失效
标题翻译：半导体器件和半导体存储器件
公开(公告)号：US20090091040A1
公开(公告)日：2009-04-09
申请号：US12199022
申请日：2008-08-27
申请人： Kanae UCHIDA , Masato Endo , Kazuyuki Higashi
发明人： Kanae UCHIDA , Masato Endo , Kazuyuki Higashi
IPC分类号： H01L23/535
CPC分类号： H01L21/76802 , H01L21/76829 , H01L21/76832 , H01L21/76885 , H01L27/115 , H01L27/11521 , H01L27/11524
摘要： A semiconductor storage device includes a memory cell transistor and a selective transistor formed on a semiconductor substrate, a first interlayer insulating film which is formed on the semiconductor substrate, an insulating layer formed by use of a material higher in dielectric constant than the first interlayer insulating film, a contact plug which penetrates the insulating layer and the first interlayer insulating film and which is electrically connected to a drain of the selective transistor, and a bit line which is in contact with the contact plug. A partial region in the bottom surface of the bit line is located lower than the upper surface of the contact plug, and is in contact with the surface of the insulating layer, and the partial region is also in contact with the side surface of the contact plug.
摘要翻译：半导体存储装置包括存储单元晶体管和形成在半导体衬底上的选择晶体管，形成在半导体衬底上的第一层间绝缘膜，使用介电常数高于第一层间绝缘体的材料形成的绝缘层薄膜，穿过绝缘层和第一层间绝缘膜并且与导体连接到选择晶体管的漏极的接触插塞和与接触插头接触的位线。位线底面的部分区域位于比接触插塞的上表面低的位置，与绝缘层的表面接触，部分区域也与接点的侧面接触插头。

2. 发明授权

US08350387B2 Semiconductor device and semiconductor storage device 失效
标题翻译：半导体器件和半导体存储器件
公开(公告)号：US08350387B2
公开(公告)日：2013-01-08
申请号：US12199022
申请日：2008-08-27
申请人： Kanae Uchida , Masato Endo , Kazuyuki Higashi
发明人： Kanae Uchida , Masato Endo , Kazuyuki Higashi
IPC分类号： H01L23/52
CPC分类号： H01L21/76802 , H01L21/76829 , H01L21/76832 , H01L21/76885 , H01L27/115 , H01L27/11521 , H01L27/11524
摘要： A semiconductor storage device includes a memory cell transistor and a selective transistor formed on a semiconductor substrate, a first interlayer insulating film which is formed on the semiconductor substrate, an insulating layer formed by use of a material higher in dielectric constant than the first interlayer insulating film, a contact plug which penetrates the insulating layer and the first interlayer insulating film and which is electrically connected to a drain of the selective transistor, and a bit line which is in contact with the contact plug. A partial region in the bottom surface of the bit line is located lower than the upper surface of the contact plug, and is in contact with the surface of the insulating layer, and the partial region is also in contact with the side surface of the contact plug.
摘要翻译：半导体存储装置包括存储单元晶体管和形成在半导体衬底上的选择晶体管，形成在半导体衬底上的第一层间绝缘膜，使用介电常数高于第一层间绝缘体的材料形成的绝缘层薄膜，穿过绝缘层和第一层间绝缘膜并且与导体连接到选择晶体管的漏极的接触插塞和与接触插头接触的位线。位线底面的部分区域位于比接触插塞的上表面低的位置，与绝缘层的表面接触，部分区域也与接点的侧面接触插头。

3. 发明申请

US20100124117A1 NONVOLATILE SEMICONDUCTOR MEMORY 有权
标题翻译：非易失性半导体存储器
公开(公告)号：US20100124117A1
公开(公告)日：2010-05-20
申请号：US12618200
申请日：2009-11-13
申请人： Hiroyuki KUTSUKAKE , Kenji GOMIKAWA , Mitsuhiro NOGUCHI , Kikuko SUGIMAE , Masato Endo , Takuya FUTATSUYAMA , Koji KATO , Kanae UCHIDA
发明人： Hiroyuki KUTSUKAKE , Kenji GOMIKAWA , Mitsuhiro NOGUCHI , Kikuko SUGIMAE , Masato Endo , Takuya FUTATSUYAMA , Koji KATO , Kanae UCHIDA
IPC分类号： G11C16/04
CPC分类号： G11C16/0483 , G11C16/16 , H01L27/11521 , H01L27/11526
摘要： A memory includes a first word line which is connected to a control gate electrode of a first memory cell, a second word line which is connected to a control gate electrode of a second memory cell, a potential transfer line which is connected to both of the first and second word lines, a first N-channel MOS transistor which is connected between the first word line and the potential transfer line, and a second N-channel MOS transistor which is connected between the second word line and the potential transfer line. A control circuit supplies a first potential with a plus value to a semiconductor substrate, and supplies a second potential with the plus value lower than the first potential to the potential transfer line, to turn the first N-channel MOS transistor on, and to turn the second N-channel MOS transistor off, in erasing data of the first memory cell.
摘要翻译：存储器包括连接到第一存储单元的控制栅电极的第一字线，连接到第二存储单元的控制栅极的第二字线，连接到第二存储单元的控制栅电极的电位传输线第一和第二字线，连接在第一字线和电位传输线之间的第一N沟道MOS晶体管和连接在第二字线和电位传输线之间的第二N沟道MOS晶体管。控制电路向半导体衬底提供具有正值的第一电位，并向电位传输线提供具有低于第一电位的正值的第二电位，以使第一N沟道MOS晶体管导通，并转向第二N沟道MOS晶体管截止，以擦除第一存储单元的数据。

4. 发明授权

US08625349B2 Potential relationship in an erasing operation of a nonvolatile semiconductor memory 有权
标题翻译：非易失性半导体存储器的擦除操作中的潜在关系
公开(公告)号：US08625349B2
公开(公告)日：2014-01-07
申请号：US12618200
申请日：2009-11-13
申请人： Hiroyuki Kutsukake , Kenji Gomikawa , Mitsuhiro Noguchi , Kikuko Sugimae , Masato Endo , Takuya Futatsuyama , Koji Kato , Kanae Uchida
发明人： Hiroyuki Kutsukake , Kenji Gomikawa , Mitsuhiro Noguchi , Kikuko Sugimae , Masato Endo , Takuya Futatsuyama , Koji Kato , Kanae Uchida
IPC分类号： G11C11/34
CPC分类号： G11C16/0483 , G11C16/16 , H01L27/11521 , H01L27/11526
摘要： A memory includes a first word line which is connected to a control gate electrode of a first memory cell, a second word line which is connected to a control gate electrode of a second memory cell, a potential transfer line which is connected to both of the first and second word lines, a first N-channel MOS transistor which is connected between the first word line and the potential transfer line, and a second N-channel MOS transistor which is connected between the second word line and the potential transfer line. A control circuit supplies a first potential with a plus value to a semiconductor substrate, and supplies a second potential with the plus value lower than the first potential to the potential transfer line, to turn the first N-channel MOS transistor on, and to turn the second N-channel MOS transistor off, in erasing data of the first memory cell.
摘要翻译：存储器包括连接到第一存储单元的控制栅电极的第一字线，连接到第二存储单元的控制栅极的第二字线，连接到第二存储单元的控制栅电极的电位传输线第一和第二字线，连接在第一字线和电位传输线之间的第一N沟道MOS晶体管和连接在第二字线和电位传输线之间的第二N沟道MOS晶体管。控制电路向半导体衬底提供具有正值的第一电位，并向电位传输线提供具有低于第一电位的正值的第二电位，以使第一N沟道MOS晶体管导通，并转向第二N沟道MOS晶体管截止，以擦除第一存储单元的数据。

5. 发明授权

US07994587B2 Semiconductor device and semiconductor device manufacturing method 有权
标题翻译：半导体器件和半导体器件制造方法
公开(公告)号：US07994587B2
公开(公告)日：2011-08-09
申请号：US12484526
申请日：2009-06-15
申请人： Masato Endo , Kanae Uchida
发明人： Masato Endo , Kanae Uchida
IPC分类号： H01L29/78
CPC分类号： H01L21/823462 , H01L21/76229 , H01L21/823481 , H01L27/088 , H01L27/105 , H01L27/11546
摘要： A semiconductor device includes a plurality of first MOS transistors has a first gate electrode formed on a first gate insulating film provided on a semiconductor substrate, a plurality of second MOS transistors has a second gate electrode formed on a second gate insulating film which is provided on the substrate and which is smaller in thickness than the first gate insulating film. A first element isolation region has a first region and a second region, a bottom surface of the second region is deeper than that of the first region by the difference of thickness between the first gate insulating film and the second gate insulating film, and a bottom surface of the first region is equal in a bottom surface of a second element isolation region.
摘要翻译：一种半导体器件，包括多个第一MOS晶体管，具有形成在设置在半导体衬底上的第一栅极绝缘膜上的第一栅极，多个第二MOS晶体管具有形成在第二栅极绝缘膜上的第二栅极，并且其厚度小于第一栅极绝缘膜的厚度。第一元件隔离区域具有第一区域和第二区域，第二区域的底表面比第一区域的第一栅极绝缘膜和第二栅极绝缘膜之间的厚度差更深，第一区域的表面在第二元件隔离区域的底表面中相等。

6. 发明申请

US20150142497A1 ON-DEMAND VEHICLE SERVICE MANAGEMENT DEVICE, ON-DEMAND VEHICLE SERVICE MANAGEMENT METHOD, AND ON-DEMAND VEHICLE SERVICE MANAGEMENT SYSTEM 审中-公开
标题翻译：需求车辆服务管理设备，需求车辆服务管理方法和需求车辆服务管理系统
公开(公告)号：US20150142497A1
公开(公告)日：2015-05-21
申请号：US14412284
申请日：2012-07-02
申请人： Ryota Osumi , Masato Endo , Masayuki Kawamoto , Tatsuya Morii
发明人： Ryota Osumi , Masato Endo , Masayuki Kawamoto , Tatsuya Morii
IPC分类号： G06Q10/06
CPC分类号： G06Q10/06314 , G06Q10/047 , G06Q10/06313 , G06Q10/06315 , G06Q10/083 , G06Q50/10 , G06Q50/28 , G06Q50/30 , G08G1/127 , G08G1/202
摘要： An operation management center uses desired provision content and desired provision time of a commodity or service to determine a first operation schedule in which a user is moved to a location at which the commodity or the service is to be provided or a second operation schedule in which the commodity or the service is moved to a location at which the provision of the commodity or the service is to be received by the user. The center determines the first operation schedule or the second operation schedule so as to satisfy the desired provision time desired by the user.
摘要翻译：操作管理中心使用期望的提供内容和期望的商品或服务的提供时间来确定用户被移动到要提供商品或服务的位置的第一操作调度，或者其中第将商品或服务移动到用户要接收商品或服务的提供的位置。中心确定第一操作调度或第二操作调度以满足用户期望的期望供应时间。

7. 发明申请

US20140163854A1 DRIVE ASSIST APPARATUS 审中-公开
标题翻译：驾驶辅助装置
公开(公告)号：US20140163854A1
公开(公告)日：2014-06-12
申请号：US14234327
申请日：2012-07-11
申请人： Satoru Matsumoto , Kentaro Takahashi , Masato Endo
发明人： Satoru Matsumoto , Kentaro Takahashi , Masato Endo
IPC分类号： G01C21/34
CPC分类号： B60W50/08 , B60K6/20 , B60K35/00 , B60K2350/1076 , B60L11/1848 , B60L11/1862 , B60L2240/622 , B60L2240/72 , B60L2250/16 , B60L2260/52 , B60L2260/54 , B60W20/12 , B60W40/12 , B60W2510/244 , B60W2550/402 , B60W2750/40 , B60Y2200/92 , G01C21/3469 , G01C21/3667 , G01C21/3676 , G09B29/007 , G09B29/10 , H04M1/0202 , H04W4/80 , Y02T10/6269 , Y02T10/7005 , Y02T10/7044 , Y02T10/705 , Y02T10/7072 , Y02T10/7291 , Y02T10/84 , Y02T90/121 , Y02T90/128 , Y02T90/14 , Y02T90/16 , Y02T90/161 , Y02T90/162 , Y02T90/163 , Y02T90/169 , Y04S30/14 , Y10S903/903
摘要： An electronic control unit of a drive assist apparatus acquires electric power source identification information for identifying a source of an electric power currently charged in a battery and electric power amount information representing an electric power amount corresponding to the source from an electric power acquisition unit, thereby recognizing a battery remaining amount SOCrg representing a green electric power, a battery remaining amount SOCj representing a privately generated green electric power, and a battery remaining amount SOCrs representing a non-green electric power. The unit presents travelable ranges each formed by connecting a group of maximum reachable points to which a PHV can reach by using each of a battery total remaining amount SOCr and the battery remaining amounts SOCrg, SOCj, and SOCrs to a user (driver) by using an information presentation unit.
摘要翻译：驱动辅助装置的电子控制单元获取用于识别电池中当前充电的电力源的电力源识别信息和表示来自电力获取单元的源的电力量的电力量信息，从而识别表示绿色电力的电池剩余量SOCrg，表示私人生成的绿色电力的电池剩余量SOCj以及表示非绿色电力的电池剩余量SOCrs。该单元呈现了可通过使用通过使用电池总剩余量SOCr和电池剩余量SOCrg，SOCj和SOCrs中的每一个将PHV可以达到的一组最大可达点连接到用户（驾驶员）而形成的可行驶范围信息呈现单元。

8. 发明申请

US20120199896A1 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE FOR SUPPRESSING DETERIORATION IN JUNCTION BREAKDOWN VOLTAGE AND SURFACE BREAKDOWN VOLTAGE OF TRANSISTOR 失效
标题翻译：非易失性半导体存储器件，用于抑制断路电压和晶体管表面断开电压的检测
公开(公告)号：US20120199896A1
公开(公告)日：2012-08-09
申请号：US13234613
申请日：2011-09-16
申请人： Mitsuhiro NOGUCHI , Hiroyuki Kutsukake , Masato Endo
发明人： Mitsuhiro NOGUCHI , Hiroyuki Kutsukake , Masato Endo
IPC分类号： H01L27/088 , H01L27/06 , H01L29/78
CPC分类号： H01L27/11524 , H01L27/11519
摘要： According to one embodiment, a non-volatile semiconductor memory device includes a plurality of memory cells and a transistor. The transistor includes a gate insulating film, a gate electrode on the gate insulating film, a sidewall insulating film on both side surfaces of the gate electrode, a source diffusion layer corresponding to the sidewall insulating film, a first hollow formed in a position at a height less than a bottom surface of the gate insulating film directly below an outer side surface of the sidewall insulating film of another side of the gate electrode, a second hollow formed in the first hollow at a position at a height less than the first hollow, and a drain diffusion layer corresponding to another side of the gate electrode and including a low-concentration drain region formed on a bottom surface of the second hollow and a high-concentration drain region.
摘要翻译：根据一个实施例，非易失性半导体存储器件包括多个存储单元和晶体管。晶体管包括栅极绝缘膜，栅极绝缘膜上的栅电极，栅电极的两个侧表面上的侧壁绝缘膜，对应于侧壁绝缘膜的源极扩散层，形成在位于高度小于栅电极另一侧的侧壁绝缘膜的外侧表面正下方的栅极绝缘膜的底表面，在第一中空部分中形成的第二中空在比第一中空部的高度低的位置处，以及与栅电极的另一侧对应的漏极扩散层，并且包括形成在第二中空部的底面上的低浓度漏极区域和高浓度漏极区域。

9. 发明授权

US08169824B2 Semiconductor device including contact plug having an elliptical sectional shape 有权
标题翻译：包括具有椭圆形截面形状的接触插头的半导体装置
公开(公告)号：US08169824B2
公开(公告)日：2012-05-01
申请号：US12699319
申请日：2010-02-03
申请人： Masato Endo , Itaru Kawabata , Shinichi Watanabe , Hiroyuki Nitta , Takuya Futatsuyama
发明人： Masato Endo , Itaru Kawabata , Shinichi Watanabe , Hiroyuki Nitta , Takuya Futatsuyama
IPC分类号： G11C11/34
CPC分类号： H01L21/823871 , G11C16/0466 , G11C16/26 , H01L21/76816 , H01L27/11519 , H01L27/11521 , H01L29/41725
摘要： A semiconductor device includes a first MOS transistor, second MOS transistors, first contact plugs, and a second contact plug. The first MOS transistor with a first conductivity is formed on a semiconductor substrate. The second MOS transistors with a second conductivity are formed on the semiconductor substrate. The first contact plugs has a circular planar shape. The second contact plug has an elliptical planar shape and is formed on a source or a drain in one of the second MOS transistors. The first contact plugs are formed on sources or drains in the remaining second MOS transistors and the first MOS transistor.
摘要翻译：半导体器件包括第一MOS晶体管，第二MOS晶体管，第一接触插塞和第二接触插塞。具有第一导电性的第一MOS晶体管形成在半导体衬底上。具有第二导电性的第二MOS晶体管形成在半导体衬底上。第一接触塞具有圆形平面形状。第二接触插塞具有椭圆形平面形状，并形成在第一MOS晶体管之一的源极或漏极上。第一接触插塞形成在剩余的第二MOS晶体管和第一MOS晶体管的源极或漏极上。

10. 发明申请

US20110313609A1 VEHICLE DRIVE SUPPORT DEVICE 有权
标题翻译：车辆驱动支持设备
公开(公告)号：US20110313609A1
公开(公告)日：2011-12-22
申请号：US13203914
申请日：2009-03-06
申请人： Masato Endo , Yuki Yamada
发明人： Masato Endo , Yuki Yamada
IPC分类号： G06F7/00 , G05D1/00
CPC分类号： G08G1/096716 , G08G1/096758 , G08G1/096783
摘要： A GPS and a map information database acquire information regarding an arrow light which displays a signal for prohibiting travel in a particular direction, such as a red arrow light. A display and a loudspeaker supply information to a motorist of a host vehicle based on the information acquired by the GPS and the map information database, or a brake ECU and a brake actuator brake the host vehicle without depending on the manipulation by the motorist based on the information acquired by the GPS and the map information database. As a result, it is possible to correctly support driving even when a red arrow light or the like for prohibiting travel in a right turn direction.
摘要翻译： GPS和地图信息数据库获取关于显示用于禁止在特定方向上行进的信号（例如红色箭头灯）的箭头指示灯的信息。显示器和扬声器基于由GPS和地图信息数据库获取的信息，或者制动ECU和制动器致动器，向主车辆的驾驶员提供信息，而不依赖于驾驶者基于由GPS和地图信息数据库获取的信息。结果，即使在用于禁止沿右转方向行驶的红色箭头灯等的情况下也可以正确地支持驾驶。

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