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1. 发明授权

US06338874B1 Method for multilayer CVD processing in a single chamber 失效
标题翻译：在单室中进行多层CVD处理的方法
公开(公告)号：US06338874B1
公开(公告)日：2002-01-15
申请号：US08572385
申请日：1995-12-14
申请人： Kam S. Law , Robert Robertson , Pamela Lou , Marc Michael Kollrack , Angela Lee , Dan Maydan
发明人： Kam S. Law , Robert Robertson , Pamela Lou , Marc Michael Kollrack , Angela Lee , Dan Maydan
IPC分类号： C23C1600
CPC分类号： H01L21/67167 , C23C16/24 , C23C16/345 , C23C16/54 , H01L21/6719 , H01L21/67207 , H01L21/67236 , H01L29/66765
摘要： Multilayer deposition of thin films onto glass substrates to form thin film transistors can be carried out in the same chamber under similar reaction conditions at high deposition rates. We have found that sequential thin layers of silicon nitride and amorphous silicon can be deposited in the same chamber by chemical vapor deposition using pressure of at least 0.5 Torr and substrate temperatures of about 250-370° C. Subsequently deposited different thin films can also be deposited in separate chemical vapor deposition chambers which are part of a single multichamber vacuum system.
摘要翻译：可以在相同的室中在相同的反应条件下以高沉积速率将薄膜多层沉积到玻璃基板上以形成薄膜晶体管。我们已经发现，氮化硅和非晶硅的顺序薄层可以通过使用至少0.5托的压力和约250-370℃的衬底温度的化学气相沉积在相同的室中沉积。随后沉积的不同薄膜也可以是沉积在单独的化学气相沉积室中，其是单个多室真空系统的一部分。

2. 发明授权

US06444277B1 Method for depositing amorphous silicon thin films onto large area glass substrates by chemical vapor deposition at high deposition rates 失效
标题翻译：通过化学气相沉积在高沉积速率下将非晶硅薄膜沉积到大面积玻璃基板上的方法
公开(公告)号：US06444277B1
公开(公告)日：2002-09-03
申请号：US08303566
申请日：1994-09-09
申请人： Kam S. Law , Robert Robertson , Pamela Lou , Marc Michael Kollrack , Angela Lee , Dan Maydan
发明人： Kam S. Law , Robert Robertson , Pamela Lou , Marc Michael Kollrack , Angela Lee , Dan Maydan
IPC分类号： B05D306
CPC分类号： C23C16/0245 , C23C16/24 , C23C16/4583 , C23C16/5096 , H01L21/02422 , H01L21/0245 , H01L21/02532 , H01L21/0262
摘要： Amorphous silicon thin films can be deposited onto large area glass substrates at high deposition rates by chemical vapor deposition using pressure of at least 0.8 Torr and temperatures of about 270-350° C. and fairly high gas flow rates of silane in a hydrogen carrier gas. The spacing between the inlet gas manifold and the substrate in the CVD chamber is maintained so as to maximize the deposition rate. Improved transistor characteristics are observed when the substrate is either exposed to a hydrogen plasma for a few seconds prior to high rate deposition of the amorphous silicon, or when a first layer of amorphous silicon is deposited using a slow deposition rate process prior to deposition of the high deposition rate amorphous silicon.
摘要翻译：非晶硅薄膜可以通过使用至少0.8托的压力和约270-350℃的温度的化学气相沉积以高沉积速率沉积到大面积玻璃基板上，并且在氢载气中具有相当高的硅烷气体流速。保持入口气体歧管和CVD室中的衬底之间的间隔，以使沉积速率最大化。当在非晶硅的高速沉积之前衬底被暴露于氢等离子体几秒钟时，或者当沉积第一层非晶硅之前使用缓慢沉积速率工艺沉积第一层非晶硅时，可以观察到改善的晶体管特性高沉积速率非晶硅。

3. 发明授权

US5399387A Plasma CVD of silicon nitride thin films on large area glass substrates at high deposition rates 失效
标题翻译：在大面积玻璃基板上的高沉积速率下的氮化硅薄膜的等离子体CVD
公开(公告)号：US5399387A
公开(公告)日：1995-03-21
申请号：US227479
申请日：1994-04-13
申请人： Kam S. Law , Robert Robertson , Pamela Lou , Marc M. Kollrack , Angela Lee , Dan Maydan
发明人： Kam S. Law , Robert Robertson , Pamela Lou , Marc M. Kollrack , Angela Lee , Dan Maydan
IPC分类号： C03C17/22 , C23C16/34 , C23C16/42 , C23C16/44 , C23C16/455 , C23C16/54 , H01L21/205 , H01L21/31 , H01L21/318 , H01L21/336 , H01L29/78 , H01L29/786 , B05D3/06
CPC分类号： C23C16/45565 , C03C17/225 , C23C16/345 , C23C16/4557 , C23C16/54 , C03C2217/281 , C03C2218/153
摘要： High quality silicon nitride thin films can be deposited by plasma CVD onto large area glass substrates at high deposition rates by adjusting the spacing between the gas inlet manifold and substrate, maintaining the temperature at about 300.degree.-350.degree. C., and a pressure of at least 0.8 Torr. Subsequently deposited different thin films can also be deposited in separate chemical vapor deposition chambers which are part of a single vacuum system.
摘要翻译：可以通过等离子体CVD将高质量的氮化硅薄膜以高沉积速率沉积到大面积玻璃基板上，通过调节进气歧管和基板之间的间距，保持温度在约300-350℃，至少0.8托。随后沉积的不同薄膜也可以沉积在作为单个真空系统的一部分的分离的化学气相沉积室中。

4. 发明授权

US5441768A Multi-step chemical vapor deposition method for thin film transistors 失效
标题翻译：薄膜晶体管的多步骤化学气相沉积方法
公开(公告)号：US5441768A
公开(公告)日：1995-08-15
申请号：US193310
申请日：1994-02-08
申请人： Kam S. Law , Robert Robertson , Michael Kollrack , Angela T. Lee , Takako Takehara , Guofu J. Feng , Dan Maydan
发明人： Kam S. Law , Robert Robertson , Michael Kollrack , Angela T. Lee , Takako Takehara , Guofu J. Feng , Dan Maydan
IPC分类号： H01L21/205 , C23C16/24 , C23C16/34 , H01L21/31 , H01L21/318 , H01L21/336 , H01L29/786 , C23C16/22
CPC分类号： H01L29/66765 , C23C16/24 , C23C16/345
摘要： An improved method of depositing films of a gate silicon nitride and an amorphous silicon on a thin film transistor substrate at high deposition rates while maintaining superior film quality is provided. The material near the interface between the amorphous silicon and the nitride are deposited at a low deposition rate which produces superior quality films. The region away from the interface are deposited at a high deposition rate which produces lesser, but still good quality films. By using this method, superior quality thin film transistors can be produced at very high efficiency. The method can be carried out by depositing a high quality g-SiN.sub.x at a low deposition rate on top of an average quality gate nitride deposited at a high deposition rate and then depositing an amorphous silicon layer. It also applies in a process where high quality amorphous silicon is first deposited at a low deposition rate on a gate nitride layer to form an interface, and then average quality amorphous silicon is deposited at a high deposition rate to complete the silicon layer. The unique process can be applied whenever an interface exists with an active semiconductor layer of amorphous silicon. The process is applicable to either the back channel etched TFT device or the etch stopped TFT device.
摘要翻译：提供了一种在保持优异的膜质量的同时以高沉积速率在薄膜晶体管基板上沉积栅极氮化硅和非晶硅的膜的改进方法。在非晶硅和氮化物之间的界面附近的材料以低沉积速率沉积，其产生优质的膜。离开界面的区域以高沉积速率沉积，其产生较小但仍然是优质的膜。通过使用该方法，能够以非常高的效率制造出优质的薄膜晶体管。该方法可以通过在以高沉积速率沉积的平均质量的氮化镓的顶部上以低沉积速率沉积高质量的g-SiNx，然后沉积非晶硅层来进行。它也适用于首先在栅极氮化物层上以低沉积速率沉积高品质非晶硅以形成界面的过程，然后以高沉积速率淀积平均质量的非晶硅以完成硅层。每当与非晶硅的有源半导体层存在界面时，可以应用独特的工艺。该工艺适用于后沟道蚀刻TFT器件或蚀刻停止的TFT器件。

5. 发明授权

US5567476A Multi-step chemical vapor deposition method for thin film transistors 失效
标题翻译：薄膜晶体管的多步骤化学气相沉积方法
公开(公告)号：US5567476A
公开(公告)日：1996-10-22
申请号：US427772
申请日：1995-04-25
申请人： Kam S. Law , Robert Robertson , Michael Kollrack , Angela T. Lee , Takako Takehara , Guofu J. Feng , Dan Maydan
发明人： Kam S. Law , Robert Robertson , Michael Kollrack , Angela T. Lee , Takako Takehara , Guofu J. Feng , Dan Maydan
IPC分类号： H01L21/205 , C23C16/24 , C23C16/34 , H01L21/31 , H01L21/318 , H01L21/336 , H01L29/786 , C23C16/00
CPC分类号： H01L29/66765 , C23C16/24 , C23C16/345
摘要： A multi-step CVD method for thin film transistor is disclosed. The method can be carried out by depositing a high quality g-SiN.sub.x at a low deposition rate on top of an average quality gate nitride deposited at a high deposition rate and then depositing an amorphous silicon layer. It also applies in a process where high quality amorphous silicon is first deposited at a low deposition rate on a gate nitride layer to form an interface, and then average quality amorphous silicon is deposited at a high deposition rate to complete the silicon layer. The unique process can be applied whenever an interface exists with an active semiconductor layer of amorphous silicon. The process is applicable to either the back channel etched TFT device or the etch stopped TFT device.
摘要翻译：公开了薄膜晶体管的多步CVD方法。该方法可以通过在以高沉积速率沉积的平均质量的氮化镓的顶部上以低沉积速率沉积高质量的g-SiNx，然后沉积非晶硅层来进行。它也适用于首先在栅极氮化物层上以低沉积速率沉积高品质非晶硅以形成界面的过程，然后以高沉积速率淀积平均质量的非晶硅以完成硅层。每当与非晶硅的有源半导体层存在界面时，可以应用独特的工艺。该工艺适用于后沟道蚀刻TFT器件或蚀刻停止的TFT器件。

6. 发明授权

US5366585A Method and apparatus for protection of conductive surfaces in a plasma processing reactor 失效
标题翻译：用于保护等离子体处理反应器中的导电表面的方法和装置
公开(公告)号：US5366585A
公开(公告)日：1994-11-22
申请号：US10975
申请日：1993-01-28
申请人： Robert Robertson , Kam S. Law , John M. White
发明人： Robert Robertson , Kam S. Law , John M. White
IPC分类号： B01J19/08 , C23C16/44 , C23C16/509 , C30B25/08 , H01J37/02 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31 , B44C1/22
CPC分类号： H01J37/32495 , C23C16/4404 , C23C16/4405 , C23C16/5096 , H01J37/026 , H01J2237/0206 , H01J2237/022 , Y10S156/914 , Y10S156/916
摘要： An apparatus and method for protecting conductive, typically metallic, walls (212) of a plasma process chamber (200) from accumulation of contaminants thereon and from reaction with a gas plasma and either deposition-gas plasma by-products. A ceramic barrier material (220-223), preferably of at least 0.005 inches 127 micrometers) thickness, is used adjacent the conductive portions of the reactor chamber and between the gas plasma and such conductive portions to be protected. The ceramic barrier material reduces the deposit of compounds formed from the plasma on protected reactor chamber surfaces and thereby avoiding the formation of a source of particulates. Further, the ceramic barrier material enables cleaning of the reactor chamber using an etch plasma generated from halogen-comprising gas without the etch plasma attacking protected metallic portions of the reactor. The ceramic liner can serve an additional function of preventing arcing or local intense plasma discharge from a plasma-generation electrode (216), to a conductive portion of the reactor chamber.
摘要翻译：一种用于保护等离子体处理室（200）的导电的，通常是金属的壁（212）的装置和方法，其不会积聚污染物并且与气体等离子体和沉积气体等离子体副产物反应。邻近反应器室的导电部分和气体等离子体和待保护的导电部分之间使用陶瓷阻挡材料（220-223），优选至少0.005英寸127微米）。陶瓷阻挡材料减少了在受保护的反应器室表面上由等离子体形成的化合物的沉积，从而避免了颗粒物的形成。此外，陶瓷阻挡材料能够使用由含卤素气体产生的蚀刻等离子体来清洁反应室，而没有蚀刻等离子体侵蚀反应器的受保护的金属部分。陶瓷衬垫可以起到防止从等离子体产生电极（216）的电弧或局部强烈等离子体放电到反应器室的导电部分的附加功能。

7. 发明授权

US5380566A Method of limiting sticking of body to susceptor in a deposition treatment 失效
标题翻译：在沉积处理中限制身体对感受器的粘附的方法
公开(公告)号：US5380566A
公开(公告)日：1995-01-10
申请号：US080018
申请日：1993-06-21
申请人： Robert Robertson , Marc M. Kollrack , Angela T. Lee , Kam Law , Dan Maydan
发明人： Robert Robertson , Marc M. Kollrack , Angela T. Lee , Kam Law , Dan Maydan
IPC分类号： C23C16/50 , C23C16/509 , C23C16/56 , B05D3/06
CPC分类号： C23C16/56 , C23C16/509
摘要： A method of limiting sticking of a body (substrate) to a susceptor after the body has been coated with a layer in a deposition chamber by plasma chemical vapor deposition includes subjecting the coated body to a plasma of an inactive gas, e.g., hydrogen, nitrogen, argon or ammonia, which does not adversely affect the coating and does not add additional layers to the body. After the coated body is subjected to the plasma of the inactive gas, the body is separated from the susceptor.
摘要翻译：在通过等离子体化学气相沉积在体积已经在沉积室中涂覆了层之后，将体（衬底）粘附到基座上的方法包括使涂覆体经受惰性气体例如氢气，氮气等离子体，氩或氨，其不会对涂层产生不利影响，并且不向身体添加额外的层。在涂覆体经受惰性气体的等离子体之后，主体与基座分离。

8. 发明申请

US20100208643A1 TELECOMMUNICATIONS SYSTEM AND METHOD 有权
标题翻译：电信系统与方法
公开(公告)号：US20100208643A1
公开(公告)日：2010-08-19
申请号：US12596830
申请日：2008-04-09
申请人： Robert Robertson
发明人： Robert Robertson
IPC分类号： H04W72/04 , H04B7/14
CPC分类号： H04B7/2656 , H04B7/2606
摘要： A telecommunications system for communicating data to and from a mobile device. The system comprises a plurality of repeater nodes disposed to form a network. Each repeater node has a transceiver unit operable to transmit the data with a first transmission power to one or more other of the repeater nodes within one of a plurality of slots of a time frame. Each repeater node is allocated a time slot, and the mobile device is arranged to transmit and receive data to and from the repeater nodes in the network. Each of the repeater nodes is operable to transmit a pilot signal during the same one of the time slots of the time frame with a second transmission power, the second power being less than the first transmission power. The pilot signal includes an identifier of the repeater node which is transmitted with the pilot signal and the mobile device is operable to receive one of the pilot signals and from the identifier included in the strongest pilot signal the mobile device can identify on of the repeater nodes to which to transmit and or receive data.
摘要翻译：用于向移动设备传送数据和从移动设备传送数据的电信系统。该系统包括被设置成形成网络的多个中继器节点。每个中继器节点具有收发器单元，其可操作以将具有第一发射功率的数据发射到时间帧的多个时隙之一内的一个或多个其他中继器节点。每个中继器节点被分配一个时隙，并且移动设备被安排为向网络中的中继器节点发送数据和从中继器节点接收数据。每个中继器节点可操作以在具有第二传输功率的时间帧的相同时隙之间发送导频信号，第二功率小于第一传输功率。导频信号包括与导频信号一起发送的中继器节点的标识符，并且移动设备可操作以接收导频信号中的一个，并且从包括在移动设备可识别的中继器节点的最强导频信号中的标识符传送和/或接收数据。

9. 发明申请

US20050272273A1 Method and apparatus for electrostatically maintaining substrate flatness 审中-公开
公开(公告)号：US20050272273A1
公开(公告)日：2005-12-08
申请号：US11136662
申请日：2005-05-24
申请人： Quanyuan Shang , Robert Robertson , Kam Law , James Gardner
发明人： Quanyuan Shang , Robert Robertson , Kam Law , James Gardner
IPC分类号： C23C14/50 , C23C16/00 , C23C16/458 , H01L21/00 , H01L21/26 , H01L21/31 , H01L21/324 , H01L21/42 , H01L21/469 , H01L21/477 , H01L21/683 , H02N13/00
CPC分类号： C23C16/4583 , C23C14/50 , C23C16/458 , C23C16/4586 , H01L21/67069 , H01L21/6831 , H02N13/00 , Y10T279/23
摘要： An apparatus and method for holding a substrate on a support layer in a processing chamber. The method includes the steps of positioning the substrate a predetermined distance from the support layer, introducing a plasma in the processing chamber, lowering the substrate to a point where the substrate engages the support layer, and maintaining the plasma for a predetermined time. The apparatus is directed to a susceptor system for a processing chamber in which a substrate is electrostatically held essentially flat. The apparatus includes a substrate support and a support layer composed of a dielectric material disposed on the substrate support. At least one lift pin is used for supporting the substrate relative to the support layer. Means are provided for moving each lift pin relative to the support layer. Means are also provided for producing a plasma within the processing chamber.

10. 发明申请

US20100034132A1 TELECOMMUNICATIONS SYSTEM AND METHOD 有权
标题翻译：电信系统与方法
公开(公告)号：US20100034132A1
公开(公告)日：2010-02-11
申请号：US12373043
申请日：2007-07-13
申请人： Robert Robertson , Andrew Lewis
发明人： Robert Robertson , Andrew Lewis
IPC分类号： H04B7/14
CPC分类号： H04B7/2656 , H04B7/155 , H04B7/2606 , H04W16/26 , H04W48/12 , H04W52/325 , H04W52/46
摘要： A telecommunications system for communicating data to and from a mobile device. The system comprises a plurality of repeater nodes disposed to form a network. Each repeater, node has a transceiver unit operable to transmit the data with a first transmission power to one or more other of the repeater nodes within one of a plurality of slots of a time frame. Each repeater node is allocated a time slot, and the mobile device is arranged to transmit and receive data to and from the repeater nodes in the network. Each of the repeater nodes is operable to transmit a pilot signal during the same one of the time slots of the time frame with a second transmission power, the second power being less than the first transmission power. The pilot signal includes an identifier of the repeater node which is transmitted with the pilot signal and the mobile device is operable to receive one of the pilot signals.
摘要翻译：用于向移动设备传送数据和从移动设备传送数据的电信系统。该系统包括被设置成形成网络的多个中继器节点。每个中继器节点具有收发器单元，其可操作以将具有第一传输功率的数据传输到时间帧的多个时隙之一内的一个或多个其他中继器节点。每个中继器节点被分配一个时隙，并且移动设备被安排为向网络中的中继器节点发送数据和从中继器节点接收数据。每个中继器节点可操作以在具有第二传输功率的时间帧的相同时隙之间发送导频信号，第二功率小于第一传输功率。导频信号包括与导频信号一起发送的中继器节点的标识符，并且移动设备可操作以接收导频信号之一。

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