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1. 发明授权

US11705334B2 Semiconductor device and method of manufacturing same 有权
公开(公告)号：US11705334B2
公开(公告)日：2023-07-18
申请号：US17366260
申请日：2021-07-02
申请人： KABUSHIKI KAISHA TOSHIBA , TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
发明人： Yuhki Fujino
IPC分类号： H01L29/78 , H01L21/22 , H01L21/285 , H01L21/265 , H01L29/08 , H01L29/10 , H01L29/66 , H01L21/324
CPC分类号： H01L21/22 , H01L21/265 , H01L21/28556 , H01L21/324 , H01L29/0847 , H01L29/1095 , H01L29/6659
摘要： A semiconductor device includes a semiconductor part; first and second electrodes, the semiconductor part being provided between the first and second electrodes; a control electrode selectively provided between the semiconductor part and the second electrode; and a contacting part electrically connecting the semiconductor part and the second electrode. The semiconductor part includes a first layer of a first conductivity type, a second layer of a second conductivity type provided between the first layer and the second electrode, a third layer of the first conductivity type selectively provided between the second layer and the second electrode, and a fourth layer of the second conductivity type selectively provided between the second layer and the second electrode. The contacting part includes a first semiconductor portion of the first conductivity type contacting the third layer, and a second semiconductor portion of the second conductivity type contacting the fourth layer.

2. 发明申请

US20220085159A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
公开(公告)号：US20220085159A1
公开(公告)日：2022-03-17
申请号：US17198334
申请日：2021-03-11
申请人： Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
发明人： Yuhki Fujino
IPC分类号： H01L29/06 , H01L29/78 , H01L29/66
摘要： According to one embodiment, a semiconductor device includes first and second electrodes, first to fifth semiconductor regions, and a gate electrode. The first semiconductor region is provided on the first electrode, and electrically connected to the first electrode. The second semiconductor region is provided on a part of the first semiconductor region, The third semiconductor region is provided on another part of the first semiconductor region. The third semiconductor region includes first and second regions. The fourth semiconductor region is provided on the second semiconductor region. The fifth semiconductor region is provided on a part of the fourth semiconductor region. The gate electrode faces the fourth semiconductor region with a gate insulating layer interposed between the gate electrode and the fourth semiconductor region. The second electrode is provided on the fourth and fifth semiconductor regions. The second electrode is electrically connected to the fourth and fifth semiconductor regions.

3. 发明申请

US20180342415A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME 审中-公开
公开(公告)号：US20180342415A1
公开(公告)日：2018-11-29
申请号：US15876412
申请日：2018-01-22
申请人： Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
发明人： Yuhki Fujino , Noboru Yokoyama , Hideki Okumura
IPC分类号： H01L21/762 , H01L29/06 , H01L29/78 , H01L29/66 , H01L29/423
摘要： According to an embodiment, a method of manufacturing a semiconductor device includes forming a semiconductor layer having a first conductivity type on a semiconductor substrate, forming a trench in the semiconductor substrate and the semiconductor layer, forming a semiconductor film having a second conductivity type on an inner wall surface and a bottom surface of the trench, forming a first insulating film including silicon oxide on a side surface and a bottom surface of the semiconductor film, forming a second insulating film including silicon nitride on a side surface and a bottom surface of the first insulating film, and forming a third insulating film including silicon oxide on a side surface and a bottom surface of the second insulating film.

4. 发明申请

US20220157952A1 SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20220157952A1
公开(公告)日：2022-05-19
申请号：US17591420
申请日：2022-02-02
申请人： Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
发明人： Yuhki Fujino
IPC分类号： H01L29/40 , H01L29/78 , H01L29/423 , H01L29/51
摘要： A semiconductor device includes: a first electrode; a first semiconductor layer of first conductivity type provided on the first electrode; a second semiconductor layer of first conductivity type provided on the first semiconductor layer; a first semiconductor region of second conductivity type provided on the second semiconductor layer; a second semiconductor region of first conductivity type provided on the first semiconductor region; a first insulating film provided in a trench reaching the second semiconductor layer from above the second semiconductor region via the second semiconductor region and the first semiconductor region, the first insulating film containing a first insulating material; a second electrode provided in the trench, the second electrode facing the second semiconductor layer via the first insulating film; a second insulating film provided between a position of 40% of a height of the second electrode from a lower end of the second electrode and a position of an upper end of the second electrode, the second insulating film being provided between the side surface of the second electrode and a fifth insulating film provided between a side surface of the second electrode and the second semiconductor layer, the fifth insulating film containing the first insulating material, the second insulating film containing a second insulating material having a higher dielectric constant than the first insulating material; a third electrode provided above the second electrode, the first insulating film and the second insulating film, the third electrode facing the first semiconductor region via a gate insulating film; an interlayer insulating film provided on the third electrode; and a fourth electrode provided above the interlayer insulating film, wherein the first insulating film in the trench below the position of 40% of the height of the second electrode contains only the first insulating material.

5. 发明申请

US20210296454A1 SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20210296454A1
公开(公告)日：2021-09-23
申请号：US17004545
申请日：2020-08-27
申请人： Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
发明人： Yuhki Fujino
IPC分类号： H01L29/40 , H01L29/78 , H01L29/423 , H01L29/51
摘要： A semiconductor device includes: a first electrode; a first semiconductor layer of first conductivity type provided on the first electrode; a second semiconductor layer of first conductivity type provided on the first semiconductor layer; a first semiconductor region of second conductivity type provided on the second semiconductor layer; a second semiconductor region of first conductivity type provided on the first semiconductor region; a first insulating film provided in a trench reaching the second semiconductor layer from above the second semiconductor region via the second semiconductor region and the first semiconductor region, the first insulating film containing a first insulating material; a second electrode provided in the trench, the second electrode facing the second semiconductor layer via the first insulating film; a second insulating film provided between a position of 40% of a height of the second electrode from a lower end of the second electrode and a position of an upper end of the second electrode, the second insulating film being provided between the side surface of the second electrode and a fifth insulating film provided between a side surface of the second electrode and the second semiconductor layer, the fifth insulating film containing the first insulating material, the second insulating film containing a second insulating material having a higher dielectric constant than the first insulating material; a third electrode provided above the second electrode, the first insulating film and the second insulating film, the third electrode facing the first semiconductor region via a gate insulating film; an interlayer insulating film provided on the third electrode; and a fourth electrode provided above the interlayer insulating film, wherein the first insulating film in the trench below the position of 40% of the height of the second electrode contains only the first insulating material.

6. 发明授权

US10431491B2 Semiconductor device having a triple insulating film surrounded void 有权
公开(公告)号：US10431491B2
公开(公告)日：2019-10-01
申请号：US15876412
申请日：2018-01-22
申请人： Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
发明人： Yuhki Fujino , Noboru Yokoyama , Hideki Okumura
IPC分类号： H01L29/06 , H01L29/66 , H01L29/78 , H01L29/49 , H01L29/51 , H01L21/762 , H01L29/423
摘要： According to an embodiment, a method of manufacturing a semiconductor device includes forming a semiconductor layer having a first conductivity type on a semiconductor substrate, forming a trench in the semiconductor substrate and the semiconductor layer, forming a semiconductor film having a second conductivity type on an inner wall surface and a bottom surface of the trench, forming a first insulating film including silicon oxide on a side surface and a bottom surface of the semiconductor film, forming a second insulating film including silicon nitride on a side surface and a bottom surface of the first insulating film, and forming a third insulating film including silicon oxide on a side surface and a bottom surface of the second insulating film.

7. 发明授权

US11688765B2 Semiconductor device and method for manufacturing the same 有权
公开(公告)号：US11688765B2
公开(公告)日：2023-06-27
申请号：US17198334
申请日：2021-03-11
申请人： Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
发明人： Yuhki Fujino
IPC分类号： H01L29/06 , H01L29/78 , H01L29/66
CPC分类号： H01L29/0653 , H01L29/0623 , H01L29/0696 , H01L29/66712 , H01L29/7802 , H01L29/7813
摘要： According to one embodiment, a semiconductor device includes first and second electrodes, first to fifth semiconductor regions, and a gate electrode. The first semiconductor region is provided on the first electrode, and electrically connected to the first electrode. The second semiconductor region is provided on a part of the first semiconductor region. The third semiconductor region is provided on another part of the first semiconductor region. The third semiconductor region includes first and second regions. The fourth semiconductor region is provided on the second semiconductor region. The fifth semiconductor region is provided on a part of the fourth semiconductor region. The gate electrode faces the fourth semiconductor region with a gate insulating layer interposed between the gate electrode and the fourth semiconductor region. The second electrode is provided on the fourth and fifth semiconductor regions. The second electrode is electrically connected to the fourth and fifth semiconductor regions.

8. 发明授权

US11282929B2 Semiconductor device 有权
公开(公告)号：US11282929B2
公开(公告)日：2022-03-22
申请号：US17004545
申请日：2020-08-27
申请人： Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
发明人： Yuhki Fujino
IPC分类号： H01L29/40 , H01L29/78 , H01L29/51 , H01L29/417 , H01L29/423
摘要： A trench MOSFET with first and second electrodes and having first and second semiconductor layers of a first conductivity type, a semiconductor layer of the second conductivity type and a first and second semiconductor region of the first and second conductivity type respectively. A first insulating film and a second insulating film provided between a position of 40% of a height of the second electrode from a lower end of the second electrode and a position of an upper end of the second electrode. The second insulating film has a material with higher dielectric constant than a first insulating material of the first insulating film. The first insulating film disposed in the trench below 40% of the height of the second electrode only contains the first insulating material. A third electrode and interlayer insulating film provided on the second electrode, and a fourth electrode above the interlayer insulating film.

9. 发明申请

US20210305049A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
公开(公告)号：US20210305049A1
公开(公告)日：2021-09-30
申请号：US17016600
申请日：2020-09-10
申请人： Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
发明人： Shingo Sato , Yuhki Fujino , Hiroaki Yamashita
IPC分类号： H01L21/22 , H01L29/78 , H01L29/06 , H01L29/10 , H01L29/32 , H01L29/66
摘要： According to one embodiment, a semiconductor device includes first and second electrodes, first, fourth, and sixth semiconductor regions of a first conductivity type, a junction region, a fifth semiconductor region of a second conductivity type, and a gate electrode. The junction region includes a second semiconductor region of the first conductivity type and a third second semiconductor region of the second conductivity type. The second semiconductor regions and the third semiconductor regions are alternately provided in a second direction perpendicular to a first direction. A concentration of at least one first element selected from the group consisting of a heavy metal element and a proton in the junction region is greater a concentration of the first element in the fourth semiconductor region, or a density of traps in the junction region is greater than that in the first semiconductor region and greater than that in the fourth semiconductor region.

10. 发明授权

US11081355B2 Semiconductor device and method of manufacturing same 有权
公开(公告)号：US11081355B2
公开(公告)日：2021-08-03
申请号：US16780986
申请日：2020-02-04
申请人： KABUSHIKI KAISHA TOSHIBA , TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
发明人： Yuhki Fujino
IPC分类号： H01L21/22 , H01L21/285 , H01L21/265 , H01L29/08 , H01L29/10 , H01L29/66 , H01L21/324
摘要： A semiconductor device includes a semiconductor part; first and second electrodes, the semiconductor part being provided between the first and second electrodes; a control electrode selectively provided between the semiconductor part and the second electrode; and a contacting part electrically connecting the semiconductor part and the second electrode. The semiconductor part includes a first layer of a first conductivity type, a second layer of a second conductivity type provided between the first layer and the second electrode, a third layer of the first conductivity type selectively provided between the second layer and the second electrode, and a fourth layer of the second conductivity type selectively provided between the second layer and the second electrode. The contacting part includes a first semiconductor portion of the first conductivity type contacting the third layer, and a second semiconductor portion of the second conductivity type contacting the fourth layer.

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