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1. 发明授权

US11257829B2 Semiconductor device 有权
公开(公告)号：US11257829B2
公开(公告)日：2022-02-22
申请号：US16816816
申请日：2020-03-12
申请人： Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
发明人： Shinji Kawahara , Takeshi Yamamoto , Kazuaki Yamaura , Nobuyuki Toda
IPC分类号： H01L27/11517 , H01L27/07 , H01L29/423 , H01L27/108 , G11C16/04
摘要： A semiconductor device includes: a semiconductor substrate; a first transistor provided at an upper surface of the semiconductor substrate; and a first capacitor provided above the first transistor and connected to a gate of the first transistor. A tunnel current is able to flow between the gate and the semiconductor substrate.

2. 发明授权

US10825771B2 Semiconductor device 有权
公开(公告)号：US10825771B2
公开(公告)日：2020-11-03
申请号：US16124548
申请日：2018-09-07
申请人： Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
发明人： Nobuyuki Toda , Takeshi Yamamoto , Shinji Kawahara , Kazuaki Yamaura , Takashi Ishikawa
IPC分类号： H01L23/532 , H01L21/768 , H01L21/30
摘要： A semiconductor device includes a semiconductor substrate, an insulating film provided on the semiconductor substrate, a first element disposed at least in a lower layer portion of the insulating film, a second element disposed at least in the lower layer portion of the insulating film, and a hydrogen barrier member provided on the semiconductor substrate. The hydrogen barrier member is made from a material transmitting hydrogen less easily than does a material of the insulating film. The hydrogen barrier member and the semiconductor substrate surround the second element. The hydrogen barrier member does not surround the first element.

3. 发明授权

US11177408B2 Light detection device 有权
公开(公告)号：US11177408B2
公开(公告)日：2021-11-16
申请号：US16566480
申请日：2019-09-10
申请人： Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
发明人： Kensuke Yasuda , Nobuyuki Toda , Shinji Kawahara , Kazuaki Yamaura , Takeshi Yamamoto
IPC分类号： H01L31/107 , H01L27/144 , H01L27/146
摘要： A light detection device is disclosed. A first cell and a second cell are set in the light detection device. The first cell and the second cell are mutually adjacent. The device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer provided on the first semiconductor layer, the second semiconductor layer being of a second conductivity type; a first member provided between the first cell and the second cell; a second member provided between the first member and the first cell; and a third member provided between the first member and the second cell. The first to third members are made of a material different from the first semiconductor layer and the second semiconductor layer.

4. 发明申请

US20210320215A1 LIGHT DETECTION DEVICE 有权
公开(公告)号：US20210320215A1
公开(公告)日：2021-10-14
申请号：US17357755
申请日：2021-06-24
申请人： Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
发明人： Kensuke Yasuda , Nobuyuki Toda , Shinji Kawahara , Kazuaki Yamaura , Takeshi Yamamoto
IPC分类号： H01L31/107 , H01L27/144 , H01L27/146
摘要： A light detection device is disclosed. A first cell and a second cell are set in the light detection device. The first cell and the second cell are mutually adjacent. The device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer provided on the first semiconductor layer, the second semiconductor layer being of a second conductivity type; a first member provided between the first cell and the second cell; a second member provided between the first member and the first cell; and a third member provided between the first member and the second cell. The first to third members are made of a material different from the first semiconductor layer and the second semiconductor layer.

5. 发明申请

US20210082929A1 SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20210082929A1
公开(公告)日：2021-03-18
申请号：US16816816
申请日：2020-03-12
申请人： Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
发明人： Shinji Kawahara , Takeshi Yamamoto , Kazuaki Yamaura , Nobuyuki Toda
IPC分类号： H01L27/11517 , H01L27/07 , H01L27/108 , G11C16/04 , H01L29/423
摘要： A semiconductor device includes: a semiconductor substrate; a first transistor provided at an upper surface of the semiconductor substrate; and a first capacitor provided above the first transistor and connected to a gate of the first transistor. A tunnel current is able to flow between the gate and the semiconductor substrate.

6. 发明申请

US20200303580A1 LIGHT DETECTION DEVICE 审中-公开
公开(公告)号：US20200303580A1
公开(公告)日：2020-09-24
申请号：US16566480
申请日：2019-09-10
申请人： Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
发明人： Kensuke Yasuda , Nobuyuki Toda , Shinji Kawahara , Kazuaki Yamaura , Takeshi Yamamoto
IPC分类号： H01L31/107 , H01L27/146 , H01L27/144
摘要： A light detection device is disclosed. A first cell and a second cell are set in the light detection device. The first cell and the second cell are mutually adjacent. The device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer provided on the first semiconductor layer, the second semiconductor layer being of a second conductivity type; a first member provided between the first cell and the second cell; a second member provided between the first member and the first cell; and a third member provided between the first member and the second cell. The first to third members are made of a material different from the first semiconductor layer and the second semiconductor layer.

7. 发明申请

US20190287917A1 SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20190287917A1
公开(公告)日：2019-09-19
申请号：US16124548
申请日：2018-09-07
申请人： Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
发明人： Nobuyuki Toda , Takeshi Yamamoto , Shinji Kawahara , Kazuaki Yamaura , Takashi Ishikawa
IPC分类号： H01L23/532 , H01L21/768 , H01L21/30
摘要： A semiconductor device includes a semiconductor substrate, an insulating film provided on the semiconductor substrate, a first element disposed at least in a lower layer portion of the insulating film, a second element disposed at least in the lower layer portion of the insulating film, and a hydrogen barrier member provided on the semiconductor substrate. The hydrogen barrier member is made from a material transmitting hydrogen less easily than does a material of the insulating film. The hydrogen barrier member and the semiconductor substrate surround the second element. The hydrogen barrier member does not surround the first element.

8. 发明申请

US20170069752A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20170069752A1
公开(公告)日：2017-03-09
申请号：US15060810
申请日：2016-03-04
申请人： Kabushiki Kaisha Toshiba
发明人： Hiroaki Tajima , Kazuaki Yamaura
IPC分类号： H01L29/78 , H01L29/08 , H01L29/10
CPC分类号： H01L29/7813 , H01L29/0886 , H01L29/1095 , H01L29/4236
摘要： According to one embodiment, the fifth semiconductor region contacts the first semiconductor region. The metal region is provided on the fifth semiconductor region. The first insulating film extends in a thickness direction of the semiconductor layer. The first insulating film is adjacent to the fourth semiconductor region, the third semiconductor region, the second semiconductor region, and the first semiconductor region. The second insulating film extends in the thickness direction of the semiconductor layer. The second insulating film is provided between the fourth semiconductor region and the first conductive unit, between the third semiconductor region and the first conductive unit, and between the second semiconductor region and the first conductive unit.
摘要翻译：根据一个实施例，第五半导体区域接触第一半导体区域。金属区域设置在第五半导体区域上。第一绝缘膜在半导体层的厚度方向上延伸。第一绝缘膜与第四半导体区域，第三半导体区域，第二半导体区域和第一半导体区域相邻。第二绝缘膜在半导体层的厚度方向上延伸。第二绝缘膜设置在第四半导体区域和第一导电单元之间，第三半导体区域和第一导电单元之间以及第二半导体区域和第一导电单元之间。

9. 发明授权

US09647109B2 Semiconductor device 有权
公开(公告)号：US09647109B2
公开(公告)日：2017-05-09
申请号：US15060810
申请日：2016-03-04
申请人： Kabushiki Kaisha Toshiba
发明人： Hiroaki Tajima , Kazuaki Yamaura
IPC分类号： H01L29/778 , H01L29/78 , H01L29/10 , H01L29/08
CPC分类号： H01L29/7813 , H01L29/0886 , H01L29/1095 , H01L29/4236
摘要： According to one embodiment, the fifth semiconductor region contacts the first semiconductor region. The metal region is provided on the fifth semiconductor region. The first insulating film extends in a thickness direction of the semiconductor layer. The first insulating film is adjacent to the fourth semiconductor region, the third semiconductor region, the second semiconductor region, and the first semiconductor region. The second insulating film extends in the thickness direction of the semiconductor layer. The second insulating film is provided between the fourth semiconductor region and the first conductive unit, between the third semiconductor region and the first conductive unit, and between the second semiconductor region and the first conductive unit.

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