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1. 发明授权

US10347713B2 Semiconductor device having a triple region resurf structure 有权
公开(公告)号：US10347713B2
公开(公告)日：2019-07-09
申请号：US15912697
申请日：2018-03-06
申请人： Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
发明人： Tomohiro Tamaki
IPC分类号： H01L29/06 , H01L29/10 , H01L29/40 , H01L29/66 , H01L29/87 , H01L29/872
摘要： A semiconductor device according to an embodiment includes a semiconductor layer having first and second planes; first and second electrodes; a first semiconductor region of a first conductivity type in the semiconductor layer; a second semiconductor region of a second conductivity type between the first semiconductor region and the first plane; and a third semiconductor region of the second conductivity type surrounding the second semiconductor region. The third semiconductor region includes a first region, a second region, and a third region. A first region, a second region, and a third region are closer to the second semiconductor region in this order. An amount of second-conductivity-type impurities in the first region, the second region, and the third region is less than that of the second semiconductor region. An amount of second-conductivity-type impurities in the second region is higher than that in the first region and the third region.

2. 发明申请

US20170110449A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20170110449A1
公开(公告)日：2017-04-20
申请号：US15255336
申请日：2016-09-02
申请人： Kabushiki Kaisha Toshiba
发明人： Ryohei Gejo , Kazutoshi Nakamura , Norio Yasuhara , Tomohiro Tamaki
IPC分类号： H01L27/06 , H01L29/417 , H01L29/423 , H01L21/8249 , H01L29/167 , H01L29/207
CPC分类号： H01L27/0664 , H01L21/761 , H01L21/8249 , H01L27/0629 , H01L27/0727 , H01L27/0761 , H01L29/0696 , H01L29/0834 , H01L29/1095 , H01L29/167 , H01L29/2003 , H01L29/207 , H01L29/32 , H01L29/407 , H01L29/41708 , H01L29/42312 , H01L29/7391 , H01L29/7397 , H01L29/861 , H01L29/8613
摘要： A semiconductor device comprising: a first electrode; a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type; a third semiconductor region of the second conductivity type provided between the first semiconductor region and the second semiconductor region on the first electrode and having a higher carrier concentration of the second conductivity type than the second semiconductor region; a fourth semiconductor region; a fifth semiconductor region; a sixth semiconductor region; a seventh semiconductor region; a gate electrode; a gate insulating layer; and a second electrode provided on the fifth semiconductor region and the seventh semiconductor region.

3. 发明授权

US10418470B2 Semiconductor device having IGBT portion and diode portion 有权
公开(公告)号：US10418470B2
公开(公告)日：2019-09-17
申请号：US15912600
申请日：2018-03-06
申请人： Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
发明人： Ryohei Gejo , Kazutoshi Nakamura , Norio Yasuhara , Tomohiro Tamaki
IPC分类号： H01L27/06 , H01L29/739 , H01L29/08 , H01L29/861 , H01L27/07 , H01L29/423 , H01L29/06
摘要： A semiconductor device according to an embodiment includes a first diode portion including a first trench extending in a first direction, and a first trench electrode; a second diode portion adjacent to the first diode portion in the first direction and includes a second trench extending in the first direction, and a second trench electrode and of which the width in the first direction is greater than the width of the first diode portion in a second direction perpendicular to the first direction; and a first IGBT portion adjacent to the first diode portion in the second direction and is adjacent to the second diode portion in the first direction and includes a third trench extending in the first direction, and a first gate electrode.

4. 发明授权

US10700184B2 Semiconductor device 有权
公开(公告)号：US10700184B2
公开(公告)日：2020-06-30
申请号：US16120771
申请日：2018-09-04
申请人： KABUSHIKI KAISHA TOSHIBA , TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
发明人： Tomohiro Tamaki , Kazutoshi Nakamura , Ryohei Gejo
IPC分类号： H01L29/739 , H01L23/535 , H01L27/06
摘要： According to one embodiment, a semiconductor device a first electrode, a first semiconductor region, a second semiconductor region, a third semiconductor region, a fourth semiconductor region, a fifth semiconductor region, a sixth semiconductor region, a seventh semiconductor region, an eighth semiconductor region, a gate electrode, a ninth semiconductor region, and a second electrode. The first, second, and fourth semiconductor regions are provided on the first electrode. The third semiconductor region is provided between the first and second semiconductor regions. The fifth semiconductor region is provided on the first, second, third, and fourth semiconductor regions. The sixth and seventh semiconductor regions are provided on the fifth semiconductor region. The eighth semiconductor region is provided on a portion of the seventh semiconductor region. The ninth semiconductor region is provided around the sixth semiconductor region and the seventh semiconductor region. The ninth semiconductor region is positioned on the second semiconductor region.

5. 发明授权

US10083957B2 Semiconductor device 有权
公开(公告)号：US10083957B2
公开(公告)日：2018-09-25
申请号：US15698871
申请日：2017-09-08
申请人： Kabushiki Kaisha Toshiba
发明人： Tomohiro Tamaki , Kazutoshi Nakamura , Ryohei Gejo
IPC分类号： H01L29/66 , H01L23/58 , H01L27/06 , H01L29/739 , H01L29/861 , H01L29/10 , H01L29/06 , H01L29/40
CPC分类号： H01L27/0664 , H01L27/0727 , H01L29/0696 , H01L29/0834 , H01L29/1095 , H01L29/36 , H01L29/407 , H01L29/42372 , H01L29/7397 , H01L29/8613
摘要： According to one embodiment, a semiconductor device includes a first electrode, first regions, second regions, an eighth semiconductor region, a ninth semiconductor region of the second conductivity type, a tenth semiconductor region, second electrodes, and a third electrode. Each first region includes a first semiconductor region, a second semiconductor region, a third semiconductor region, a fourth semiconductor region, and a gate electrode. The first regions and the second regions alternate in the second direction. Each of the second regions includes a fifth semiconductor region, a sixth semiconductor region, and a seventh semiconductor region. The eighth semiconductor region is provided between the first semiconductor regions and between the fifth semiconductor regions. The eighth semiconductor region is electrically connected to the first semiconductor regions. The third electrode is provided on the tenth semiconductor region with a first insulating layer interposed. The third electrode is electrically connected to the gate electrodes.

6. 发明授权

US10892351B2 Semiconductor device 有权
公开(公告)号：US10892351B2
公开(公告)日：2021-01-12
申请号：US15447125
申请日：2017-03-02
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Tomohiro Tamaki
IPC分类号： H01L29/08 , H01L29/739 , H01L29/10 , H01L29/06 , H01L27/06 , H01L29/36 , H01L29/423 , H01L29/40
摘要： A semiconductor device includes a first semiconductor region of first conductivity type, a second semiconductor region of second conductivity type, a third semiconductor region of second conductivity type, a first electrode, a fourth semiconductor region of second conductivity type, a fifth semiconductor region of first conductivity type, a gate electrode, a sixth semiconductor region of second conductivity type, and second and third electrodes. The second and third semiconductor regions are formed below the first semiconductor region. A second conductivity type carrier concentration of the third semiconductor region is lower than that of the second semiconductor region. The gate electrode faces the fourth semiconductor region. The sixth semiconductor region is formed above the first semiconductor region and is located above the third semiconductor region. The second electrode is electrically connected to the third electrode and extends alongside the sixth semiconductor region with the first insulating layer interposed therebetween.

7. 发明申请

US20190088737A1 SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20190088737A1
公开(公告)日：2019-03-21
申请号：US15912697
申请日：2018-03-06
申请人： Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
发明人： Tomohiro Tamaki
IPC分类号： H01L29/06 , H01L29/10 , H01L29/872 , H01L29/66 , H01L29/40
CPC分类号： H01L29/0619 , H01L29/0615 , H01L29/0634 , H01L29/0638 , H01L29/0692 , H01L29/1095 , H01L29/1608 , H01L29/2003 , H01L29/36 , H01L29/404 , H01L29/66143 , H01L29/7395 , H01L29/7811 , H01L29/872
摘要： A semiconductor device according to an embodiment includes a semiconductor layer having first and second planes; first and second electrodes; a first semiconductor region of a first conductivity type in the semiconductor layer; a second semiconductor region of a second conductivity type between the first semiconductor region and the first plane; and a third semiconductor region of the second conductivity type surrounding the second semiconductor region. The third semiconductor region includes a first region, a second region, and a third region. A first region, a second region, and a third region are closer to the second semiconductor region in this order. An amount of second-conductivity-type impurities in the first region, the second region, and the third region is less than that of the second semiconductor region. An amount of second-conductivity-type impurities in the second region is higher than that in the first region and the third region.

8. 发明申请

US20180226399A1 SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20180226399A1
公开(公告)日：2018-08-09
申请号：US15698871
申请日：2017-09-08
申请人： Kabushiki Kaisha Toshiba
发明人： Tomohiro Tamaki , Kazutoshi Nakamura , Ryohei Gejo
IPC分类号： H01L27/06 , H01L29/739 , H01L29/861 , H01L29/10 , H01L29/06 , H01L29/40
CPC分类号： H01L27/0664 , H01L29/0696 , H01L29/1095 , H01L29/407 , H01L29/7397 , H01L29/8613
摘要： According to one embodiment, a semiconductor device includes a first electrode, first regions, second regions, an eighth semiconductor region, a ninth semiconductor region of the second conductivity type, a tenth semiconductor region, second electrodes, and a third electrode. Each first region includes a first semiconductor region, a second semiconductor region, a third semiconductor region, a fourth semiconductor region, and a gate electrode. The first regions and the second regions alternate in the second direction. Each of the second regions includes a fifth semiconductor region, a sixth semiconductor region, and a seventh semiconductor region. The eighth semiconductor region is provided between the first semiconductor regions and between the fifth semiconductor regions. The eighth semiconductor region is electrically connected to the first semiconductor regions. The third electrode is provided on the tenth semiconductor region with a first insulating layer interposed. The third electrode is electrically connected to the gate electrodes.

9. 发明授权

US09761582B2 Semiconductor device and method of manufacturing semiconductor device 有权
公开(公告)号：US09761582B2
公开(公告)日：2017-09-12
申请号：US15255336
申请日：2016-09-02
申请人： Kabushiki Kaisha Toshiba
发明人： Ryohei Gejo , Kazutoshi Nakamura , Norio Yasuhara , Tomohiro Tamaki
IPC分类号： H01L27/06 , H01L29/167 , H01L29/207 , H01L29/423 , H01L21/8249 , H01L29/417 , H01L29/08 , H01L29/32 , H01L27/07 , H01L21/761 , H01L29/739 , H01L29/861
CPC分类号： H01L27/0664 , H01L21/761 , H01L21/8249 , H01L27/0629 , H01L27/0727 , H01L27/0761 , H01L29/0696 , H01L29/0834 , H01L29/1095 , H01L29/167 , H01L29/2003 , H01L29/207 , H01L29/32 , H01L29/407 , H01L29/41708 , H01L29/42312 , H01L29/7391 , H01L29/7397 , H01L29/861 , H01L29/8613
摘要： A semiconductor device comprising: a first electrode; a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type; a third semiconductor region of the second conductivity type provided between the first semiconductor region and the second semiconductor region on the first electrode and having a higher carrier concentration of the second conductivity type than the second semiconductor region; a fourth semiconductor region; a fifth semiconductor region; a sixth semiconductor region; a seventh semiconductor region; a gate electrode; a gate insulating layer; and a second electrode provided on the fifth semiconductor region and the seventh semiconductor region.

10. 发明授权

US09391071B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09391071B2
公开(公告)日：2016-07-12
申请号：US14634360
申请日：2015-02-27
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Tomohiro Tamaki
IPC分类号： H01L27/06 , H01L29/739 , H01L29/861 , H01L29/10 , H01L29/06
CPC分类号： H01L29/0696 , H01L27/0727 , H01L29/0603 , H01L29/08 , H01L29/0834 , H01L29/1095 , H01L29/1608 , H01L29/7397 , H01L29/861
摘要： A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, a fourth semiconductor region of the first conductivity type, a fifth semiconductor region of the first conductivity type provided on the third semiconductor region and the fourth semiconductor region, and a sixth semiconductor region of the second conductivity type. The third semiconductor region is provided on the first semiconductor region and has a dopant concentration that is lower than a dopant concentration of the first semiconductor region. The fourth semiconductor region is provided on the second semiconductor region adjacent to the third semiconductor region. A dopant contained in the fourth semiconductor region extends to a level that is deeper than a level of a dopant contained in the third semiconductor region.
摘要翻译：半导体器件包括第一导电类型的第一半导体区域，第二导电类型的第二半导体区域，第一导电类型的第三半导体区域，第一导电类型的第四半导体区域，第一导电类型的第四半导体区域，设置在第三半导体区域和第四半导体区域上的第一导电类型以及第二导电类型的第六半导体区域。第三半导体区域设置在第一半导体区域上，并且具有低于第一半导体区域的掺杂剂浓度的掺杂剂浓度。第四半导体区域设置在与第三半导体区域相邻的第二半导体区域上。包含在第四半导体区域中的掺杂剂延伸到比包含在第三半导体区域中的掺杂剂的水平更深的水平。

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