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1. 发明授权

US11705549B2 Transparent anode thin film comprising a transparent anode active material, lithium thin film secondary battery, and the method for manufacturing the same 有权
公开(公告)号：US11705549B2
公开(公告)日：2023-07-18
申请号：US16952087
申请日：2020-11-19
申请人： KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
发明人： Ji-Won Choi , Jin Sang Kim , Chong Yun Kang , Seung Hyub Baek , Seong Keun Kim , Hyun-Cheol Song , Sang Tae Kim , Hyun Seok Lee
IPC分类号： H01M4/04 , H01M10/052 , H01M4/58 , H01M4/02
CPC分类号： H01M4/0404 , H01M4/58 , H01M10/052 , H01M2004/021 , H01M2004/027
摘要： Disclosed is a transparent anode thin film comprising a transparent anode active material layer, wherein the transparent anode active material layer comprises a Si-based anode active material having a composition represented by the following [Chemical Formula 1]:

SiNx [Chemical Formula 1]

(wherein 0

2. 发明授权

US08890142B2 Oxide electronic device and method for manufacturing the same 有权
标题翻译：氧化物电子器件及其制造方法
公开(公告)号：US08890142B2
公开(公告)日：2014-11-18
申请号：US13774722
申请日：2013-02-22
申请人： Korea Institute of Science and Technology
发明人： Seung Hyub Baek , Shin Ik Kim , Jin Sang Kim , Ji Won Choi , Seok Jin Yoon , Chong Yun Kang
IPC分类号： H01L29/12 , H01L29/66 , H01L29/778
CPC分类号： H01L29/778 , H01L29/24 , H01L29/408 , H01L29/516 , H01L29/66969 , H01L29/7786
摘要： Provided is an oxide electronic device, including: an oxide substrate; an oxide thin film layer formed on the oxide substrate and containing an oxide that is heterogeneous with respect to the oxide substrate; and a ferroelectric layer formed on the oxide thin film layer and controlling electric conductivity of two-dimensional electron gas (2DEG) generated at an interface between the oxide substrate and the oxide thin film layer. Provided also is a method for manufacturing an oxide electronic device, including: depositing, on an oxide substrate, an oxide that is heterogeneous with respect to the oxide substrate to form an oxide thin film layer; and forming a ferroelectric layer on the oxide thin film layer, wherein the ferroelectric layer controls electric conductivity of 2DEG generated at an interface between the oxide substrate and the oxide thin film layer.
摘要翻译：提供一种氧化物电子器件，包括：氧化物衬底; 氧化物薄膜层，其形成在所述氧化物基板上并且含有相对于所述氧化物基板为异质的氧化物; 以及形成在所述氧化物薄膜层上并且控制在所述氧化物衬底和所述氧化物薄膜层之间的界面处产生的二维电子气（2DEG）的导电性的铁电层。还提供了一种氧化物电子器件的制造方法，包括：在氧化物衬底上沉积相对于氧化物衬底是异质的氧化物以形成氧化物薄膜层; 以及在所述氧化物薄膜层上形成铁电体层，其中所述铁电体层控制在所述氧化物基板和所述氧化物薄膜层之间的界面处产生的2DEG的导电性。

3. 发明申请

US20130334522A1 METHOD OF FABRICATING OXIDE THIN FILM DEVICE USING LASER LIFT-OFF AND OXIDE THIN FILM DEVICE FABRICATED BY THE SAME 有权
标题翻译：使用激光剥离和氧化物薄膜装置制造氧化物薄膜装置的方法
公开(公告)号：US20130334522A1
公开(公告)日：2013-12-19
申请号：US13713396
申请日：2012-12-13
申请人： KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
发明人： Chong Yun Kang , Seok Jin Yoon , Young Ho Do , Ji Won Choi , Seung Hyub Baek , Hyun Cheol Song , Jin Sang Kim
IPC分类号： H01L21/02 , H01L29/22
CPC分类号： H01L21/02565 , H01L29/22 , H01L41/113 , H01L41/31 , H01L41/313
摘要： Provided is a method of fabricating an oxide thin film device using laser lift-off and an oxide thin film device fabricated by the same. The method includes: forming an oxide thin film on a growth substrate; bonding a temporary substrate on the oxide thin film; irradiating laser onto the growth substrate to separate the oxide thin film on which the temporary substrate has been bonded from the growth substrate; bonding a device substrate on the oxide thin film on which the temporary substrate has been bonded; and forming an upper electrode film on the oxide thin film. Therefore, it is possible to overcome problems caused by a defective layer by transferring an oxide thin film transferred on a polymer-based temporary substrate onto a device substrate, without using an interface on which a defective layer formed due to oxygen diffusion upon laser lift-off is formed.
摘要翻译：提供一种使用激光剥离制造氧化物薄膜器件的方法和由其制造的氧化物薄膜器件。该方法包括：在生长衬底上形成氧化物薄膜; 将临时衬底粘结在氧化物薄膜上; 将激光照射到所述生长衬底上以从所述生长衬底分离其上已经结合有所述临时衬底的氧化物薄膜; 将器件衬底接合在已经结合有临时衬底的氧化物薄膜上; 以及在所述氧化物薄膜上形成上电极膜。因此，可以通过将在基于聚合物的临时衬底上转移的氧化物薄膜转印到器件衬底上来克服由缺陷层引起的问题，而不使用在激光提升时由于氧扩散而形成的缺陷层的界面，关闭形成。

4. 发明授权

US11417516B2 Dielectric layer and a semiconductor memory device including the dielectric layer as a capacitor dielectric layer 有权
公开(公告)号：US11417516B2
公开(公告)日：2022-08-16
申请号：US16225432
申请日：2018-12-19
申请人： KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY , INSTITUTE FOR BASIC SCIENCE , ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY
发明人： Seong Keun Kim , Woo Chui Lee , Sang Tae Kim , Hyun Cheol Song , Seung Hyub Baek , Ji Won Choi , Jin Sang Kim , Chong Yun Kang , Christopher W. Bielawski , Jung Hwan Yum , Eric S. Larsen
IPC分类号： C01F3/02 , H01L21/02 , H01L27/108 , H01L49/02
摘要： Provided is a dielectric layer that has a rock salt structure in a room temperature stable phase. The dielectric layer is made of a compound having a chemical formula of BexM1-xO, where M includes one of alkaline earth metals and x has a value greater than 0 and not greater than 0.19. A semiconductor memory device also is provided that includes a capacitor composed of a lower electrode; a dielectric layer disposed on the lower electrode; and an upper electrode disposed on the dielectric layer, wherein the dielectric layer has a rocksalt structure in a room temperature stable phase and is made of a compound having a chemical formula shown below, BexM1-xO, where M comprises an alkaline earth metal and x has a value greater than 0 and not greater than 0.19.

5. 发明授权

US10685762B2 Paste for ohmic contact to P-type semiconductor and method for forming ohmic contact to P-type semiconductor using the same 有权
公开(公告)号：US10685762B2
公开(公告)日：2020-06-16
申请号：US15990824
申请日：2018-05-29
申请人： KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
发明人： Ji-Won Choi , Jin Sang Kim , Chong Yun Kang , Seong Keun Kim , Seung Hyub Baek , Sang Tae Kim , Won Jae Lee , Narendra Singh Parmar , Young-Shin Lee
IPC分类号： H01B1/22 , H01L29/20 , H01L21/288 , H01L21/285 , H01L29/45 , C08L29/04 , C08K3/22
摘要： The present disclosure relates to a paste for ohmic contact to p-type semiconductor, including a metal oxide and a binder, wherein the metal oxide is a rhenium oxide or a molybdenum oxide.

6. 发明授权

US11733543B2 Smart wearable lens mounted with all-solid-state thin film secondary battery and method for manufacturing the same 有权
公开(公告)号：US11733543B2
公开(公告)日：2023-08-22
申请号：US16044510
申请日：2018-07-25
申请人： KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
发明人： Ji-Won Choi , Yong-Won Song , Hyunjung Yi , Jin Sang Kim , Chong Yun Kang , Seong Keun Kim , Seung Hyub Baek , Sang Tae Kim , Hyun Seok Lee
IPC分类号： G02C7/04 , H01M4/64 , H01M10/0562 , H01M4/04 , H01M10/058 , H01M10/04 , G02C11/00 , H02J50/10 , H01M6/40
CPC分类号： G02C7/04 , G02C11/10 , H01M4/0426 , H01M4/64 , H01M10/0436 , H01M10/058 , H01M10/0562 , H01M6/40 , H01M2220/30 , H01M2300/0068 , H02J50/10
摘要： Disclosed herein is a smart wearable lens mounted with an all-solid-state thin film secondary battery including a flexible substrate, a cathode current collector, a cathode, a solid electrolyte, an anode, and an anode current collector. The smart wearable lens mounted with the all-solid-state thin film secondary battery may be stably and continuously supplied with power and has a low self-discharge rate. In addition, the smart wearable lens may minimize aversion when humans are wearing the smart wearable lens and be suitably used for a curved lens, especially a micro-lens such as a contact lens.

7. 发明授权

US11245345B2 Self-resonance tuning piezoelectric energy harvester with broadband operation frequency 有权
公开(公告)号：US11245345B2
公开(公告)日：2022-02-08
申请号：US16296218
申请日：2019-03-08
申请人： KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
发明人： Hyun-Cheol Song , Chong Yun Kang , Jin Sang Kim , Ji-won Choi , Seung Hyub Baek , Seong Keun Kim , Sang Tae Kim , Youn-hwan Shin
IPC分类号： H02N2/18 , H01L41/04 , H01L41/113 , H01L41/053
摘要： Provided is a self-resonance tuning piezoelectric energy harvester. The self-resonance tuning piezoelectric energy harvester includes a piezoelectric beam which extends along a horizontal direction, a fixing element which fixes two ends of the piezoelectric beam, and a mass which is connected to the piezoelectric beam movably along the piezoelectric beam, wherein the mass includes a through-hole through which the piezoelectric beam passes, and makes the movement through the through-hole. According to the principle of continuous movement to the resonance position, the mass of the self-resonance tuning piezoelectric energy harvester induces the piezoelectric beam to generate displacement to the maximum and maximize the electricity production capacity of the piezoelectric energy harvester.

8. 发明授权

US11837977B2 Self-resonance tuning piezoelectric energy with broadband frequency 有权
公开(公告)号：US11837977B2
公开(公告)日：2023-12-05
申请号：US16953859
申请日：2020-11-20
申请人： KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
发明人： Hyun-Cheol Song , Chong Yun Kang , Jin Sang Kim , Ji-Won Choi , Seung Hyub Baek , Seong Keun Kim
IPC分类号： H02N2/18 , H10N30/30 , H10N30/857
CPC分类号： H02N2/188 , H10N30/304 , H10N30/857
摘要： Proposed is a self-resonance tuning piezoelectric energy harvester with broadband frequency, including: a piezoelectric beam which is extended along a horizontal direction; a fixing member which fixes opposite ends of the piezoelectric beam; and a mobile mass which the piezoelectric beam passes through, and which is capable of self-movement along the piezoelectric beam through a through-hole which has a free space in addition to a space which the piezoelectric beam passes through, wherein as the mobile mass moves to a position of the piezoelectric beam, generated displacement of a piezoelectric beam is increased, and as the generated displacement becomes greater than the free space, the mobile mass is fixed to a position of a piezoelectric beam at which resonance will occur.

9. 发明授权

US10217928B2 Curved piezoelectric device 有权
公开(公告)号：US10217928B2
公开(公告)日：2019-02-26
申请号：US15158158
申请日：2016-05-18
申请人： Korea Institute of Science and Technology
发明人： Chong Yun Kang , Seok Jin Yoon , Jin Sang Kim , Ji-Won Choi , Seung Hyub Baek , Seong Keun Kim , Woo-Suk Jung , Beomjin Kwon
IPC分类号： H01L41/02 , H01L41/113
摘要： Disclosed is a curved piezoelectric device maximizing an electrical potential of the piezoelectric material corresponding to an external mechanical stress. The curved piezoelectric device includes: a curved substrate; and a piezoelectric material provided on one surface or both surfaces of the curved substrate, wherein when a stress is applied, a neutral plane in which a compressive stress and a tensile stress are balanced is located in the curved substrate, wherein the location of the neutral plane is determined by y1 and y2 of Equation 1 or 2 below, and wherein the location of the neutral plane is controllable by adjusting a thickness (d), a sectional area (A) and a Young's modulus (E) of each of the curved substrate and the piezoelectric material: wherein y 1 = E 2 ⁢ d 2 ⁡ ( d 1 + d 2 ) 2 ⁢ ( E 1 ⁢ d 1 + E 2 ⁢ d 2 ) , y 2 = E 1 ⁢ d 1 ⁡ ( d 1 + d 2 ) 2 ⁢ ( E 1 ⁢ d 1 + E 2 ⁢ d 2 ) ⁢ ⁢ and Equation ⁢ ⁢ 1 y 1 = E 2 ⁢ A 2 ⁡ ( A 1 + A 2 ) 2 ⁢ ( E 1 ⁢ A 1 + E 2 ⁢ A 2 ) , y 2 = E 1 ⁢ A 1 ⁡ ( A 1 + A 2 ) 2 ⁢ ( E 1 ⁢ A 1 + E 2 ⁢ A 2 ) . Equation ⁢ ⁢ 2

10. 发明授权

US09704610B2 Manganese tin oxide based transparent conducting oxide and transparent conductive film and method for fabricating transparent conductive film using the same 有权
公开(公告)号：US09704610B2
公开(公告)日：2017-07-11
申请号：US15014937
申请日：2016-02-03
申请人： Korea Institute of Science and Technology
发明人： Ji-Won Choi , Won-Kook Choi , Jin Sang Kim , Haena Yim
IPC分类号： B32B15/04 , C23C14/06 , H01B1/02 , H01L29/43 , H01L31/0224 , C01G19/02 , H01L31/18 , H01L33/42
CPC分类号： H01B1/02 , C01G19/02 , C01P2002/50 , C01P2002/54 , H01L29/43 , H01L31/022466 , H01L31/1884 , H01L33/42 , Y02E10/50
摘要： Disclosed is a manganese tin oxide-based transparent conducting oxide (TCO) with an optimized composition, which has low surface roughness, low sheet resistance and high transmittance even when deposited at room temperature, a multilayer transparent conductive film using the same and a method for fabricating the same. The manganese tin oxide-based transparent conducting oxide has a composition of MnxSn1-xO (0

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