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1. 发明授权

US10302590B2 Integrated circuit with sensing transistor array, sensing apparatus and measuring method 有权
公开(公告)号：US10302590B2
公开(公告)日：2019-05-28
申请号：US14434559
申请日：2013-10-11
申请人： KONINKLIJKE PHILIPS N.V.
发明人： Johan Hendrik Klootwijk , Marleen Mescher , Pascal De Graaf , Bout Marcelis
IPC分类号： H01L29/06 , H01L29/10 , H01L29/16 , G01N27/414
摘要： An integrated circuit sensor array includes a semiconductor substrate; an insulating layer over the substrate; and a first transistor on the insulating layer. The first transistor includes an exposed functionalized channel region in between a source region and a drain region for sensing an analyte in a medium. The integrated circuit sensor array also includes a second transistor formed on the insulating layer, where the second transistor includes an exposed channel region between source and drain regions for sensing a potential of the medium. Further, a voltage bias generator is conductively coupled to the semiconductor substrate for providing the transistors with a bias voltage, the voltage bias generator being responsive to the second transistor.

2. 发明授权

US09423375B2 Integrated circuit with nanowire sensors comprising a shielding layer, sensing apparatus, measuring method and manufacturing method 有权
标题翻译：具有纳米线传感器的集成电路，包括屏蔽层，感测装置，测量方法和制造方法
公开(公告)号：US09423375B2
公开(公告)日：2016-08-23
申请号：US14435546
申请日：2013-10-16
申请人： KONINKLIJKE PHILIPS N.V.
发明人： Johan Hendrik Klootwijk , Marleen Mescher , Manuel Eduardo Alarcon-Rivero , Nico Maris Adriaan De Wild
IPC分类号： G01N27/414 , H01L27/12 , H01L29/06 , H01L29/66 , H01L29/786 , G01N27/12 , G01N33/00
CPC分类号： G01N27/4146 , G01N27/127 , G01N33/0031 , H01L27/1214 , H01L27/1259 , H01L29/0673 , H01L29/66742 , H01L29/78606 , H01L29/78651
摘要： An integrated circuit (100) comprising a substrate (110); an insulating layer (120) over said substrate; and a first nanowire element (140a) and a second nanowire element (140b) adjacent to said first nanowire element on said insulating layer; wherein the first nanowire element is arranged to be exposed to a medium comprising an analyte of interest, and wherein the second nanowire element is shielded from said medium by a shielding layer (150) over said second nanowire element. A sensing apparatus including such an IC, a sensing method using such an IC and a method of manufacturing such an IC are also disclosed.
摘要翻译：一种集成电路（100），包括基板（110）; 在所述衬底上的绝缘层（120）; 以及与所述绝缘层上的所述第一纳米线元件相邻的第一纳米线元件（140a）和第二纳米线元件（140b）; 其中所述第一纳米线元件布置成暴露于包含感兴趣分析物的介质，并且其中所述第二纳米线元件通过所述第二纳米线元件上的屏蔽层（150）与所述介质屏蔽。还公开了包括这种IC的感测装置，使用这种IC的感测方法和制造这种IC的方法。

3. 发明申请

US20150293054A1 INTEGRATED CIRCUIT WITH NANOWIRE SENSORS COMPRISING A SHIELDING LAYER, SENSING APPARATUS, MEASURING METHOD AND MANUFACTURING METHOD 有权
标题翻译：具有包含屏蔽层的纳米传感器的集成电路，感测装置，测量方法和制造方法
公开(公告)号：US20150293054A1
公开(公告)日：2015-10-15
申请号：US14435546
申请日：2013-10-16
申请人： KONINKLIJKE PHILIPS N.V.
发明人： Johan Hendrik Klootwijk , Marleen Mescher , Manuel Eduardo Alarcon-Rivero , Nico Maris Adriaan De Wild
IPC分类号： G01N27/414 , H01L29/66 , H01L27/12 , H01L29/06 , H01L29/786
CPC分类号： G01N27/4146 , G01N27/127 , G01N33/0031 , H01L27/1214 , H01L27/1259 , H01L29/0673 , H01L29/66742 , H01L29/78606 , H01L29/78651
摘要： An integrated circuit (100) comprising a substrate (110); an insulating layer (120) over said substrate; and a first nanowire element (140a) and a second nanowire element (140b) adjacent to said first nanowire element on said insulating layer; wherein the first nanowire element is arranged to be exposed to a medium comprising an analyte of interest, and wherein the second nanowire element is shielded from said medium by a shielding layer (150) over said second nanowire element. A sensing apparatus including such an IC, a sensing method using such an IC and a method of manufacturing such an IC are also disclosed.
摘要翻译：一种集成电路（100），包括基板（110）; 在所述衬底上的绝缘层（120）; 以及与所述绝缘层上的所述第一纳米线元件相邻的第一纳米线元件（140a）和第二纳米线元件（140b）; 其中所述第一纳米线元件布置成暴露于包含感兴趣分析物的介质，并且其中所述第二纳米线元件通过所述第二纳米线元件上的屏蔽层（150）与所述介质屏蔽。还公开了包括这种IC的感测装置，使用这种IC的感测方法和制造这种IC的方法。

4. 发明授权

US10126263B2 Wide dynamic range fluid sensor based on nanowire platform 有权
公开(公告)号：US10126263B2
公开(公告)日：2018-11-13
申请号：US14435592
申请日：2013-10-07
申请人： KONINKLIJKE PHILIPS N.V.
发明人： Johan Hendrik Klootwijk , Marcel Mulder
IPC分类号： G01N27/00 , G01N27/414 , G01N33/00 , H01L29/06
摘要： A device for detecting a concentration of a substance in a fluid sample includes a substrate; an insulating layer arranged on the substrate; and a plurality of individually electrically addressable semiconducting nanowires arranged on the insulating layer. Each one of the plurality of nanowires is covered by an insulating material and arranged for sensing of the substance through an electrical characteristic of the nanowire. The device further includes a sample compartment for providing the fluid sample in contact with each of the plurality of nanowires. For each of the plurality of nanowires, at least one of the cross sectional dimension, the insulator thickness and the type of insulating material is selected such that each of the nanowires has a different detection range, and such that the dynamic range of the device is higher than the dynamic range of each of the individual nanowires.

5. 发明申请

US20150276667A1 INTEGRATED CIRCUIT WITH SENSING TRANSISTOR ARRAY, SENSING APPARATUS AND MEASURING METHOD 审中-公开
标题翻译：带感应晶体管阵列的集成电路，感应装置和测量方法
公开(公告)号：US20150276667A1
公开(公告)日：2015-10-01
申请号：US14434559
申请日：2013-10-11
申请人： KONINKLIJKE PHILIPS N.V.
发明人： Johan Hendrik Klootwijk , Marleen Mescher , Pascal De Graaf , Bout Marcelis
IPC分类号： G01N27/414 , H01L29/06 , H01L29/10 , H01L29/16
CPC分类号： G01N27/4148 , G01N27/4141 , G01N27/4145 , G01N27/4146 , H01L29/0673 , H01L29/1033 , H01L29/16
摘要： Integrated circuit (100) sensor array, comprising a semiconductor substrate (110); an insulating layer (120) over said substrate; an first transistor (140a) on said insulating layer, the first transistor comprising an exposed functionalized channel region (146a) in between a source region (142a) and a drain region (144) for sensing an analyte in a medium; a second transistor (140b) on said insulating layer, the second transistor comprising an exposed channel region (146b) in between a source region (142b) and a drain region (144) for sensing a potential of said medium; and a voltage bias generator (150) conductively coupled to the semiconductor substrate for providing said transistors with a bias voltage, said voltage bias generator being responsive to the second transistor. A sensing apparatus comprising such an IC and an analyte measurement method using such an IC are also disclosed.
摘要翻译：集成电路（100）传感器阵列，包括半导体衬底（110）; 在所述衬底上的绝缘层（120）; 在所述绝缘层上的第一晶体管（140a），所述第一晶体管包括用于感测介质中的分析物的源区（142a）和漏区（144）之间的暴露的功能化沟道区（146a）在所述绝缘层上的第二晶体管（140b），所述第二晶体管包括用于感测所述介质的电位的源极区（142b）和漏极区（144）之间的暴露沟道区（146b）以及导电耦合到半导体衬底的电压偏置发生器（150），用于向所述晶体管提供偏置电压，所述电压偏置发生器响应于第二晶体管。还公开了一种包括这种IC的感测装置和使用这种IC的分析物测量方法。

6. 发明授权

US11543393B2 Gas chromatography column with polybutadiene coating 有权
公开(公告)号：US11543393B2
公开(公告)日：2023-01-03
申请号：US16495156
申请日：2018-03-20
申请人： KONINKLIJKE PHILIPS N.V.
发明人： Lucas Johannes Anna Maria Beckers , Johan Hendrik Klootwijk
IPC分类号： G01N30/02 , G01N30/60 , G01N33/00 , G01N33/497 , G01N30/88
摘要： A 3D gas chromatography (GC) column development is possible by assembly of two parts each being substrates formed by gas tight materials. One part may be a silicon substrate with a snake shaped flow channel structure and the other part may be a glass plate. Both are coated with a column packing comprising polubutadiene, which is also able to glue or bond both parts together, thereby sealing the flow channel, thus forming a GC column. The column packaging can be composed in all kinds of polarity from very hydrophobic till very hydrophilic. In this way the column packing can be tuned on resolution for particular molecules which are interesting to detect, e.g. Octane. The invention is advantageous for micro GC columns.

7. 发明授权

US10422892B2 Photon counting X-ray detector 有权
公开(公告)号：US10422892B2
公开(公告)日：2019-09-24
申请号：US14647141
申请日：2013-11-20
申请人： KONINKLIJKE PHILIPS N.V.
发明人： Antonius Johannes Maria Nellissen , Frank Verbakel , Johan Hendrik Klootwijk , Herfried Karl Wieczorek
IPC分类号： G01T1/24 , G01T1/18 , G01T1/36
摘要： The present invention relates to a photon counting X-ray detector and detection method that effectively suppress polarization even under high flux conditions. The proposed detector comprises a photon counting semiconductor element (10) for generating electron-hole pairs in response to incident X-ray photons, a cathode electrode (11a, 11b; 21a, 21b; 31a, 31b, 31c, 31ac, 31d; 41a, 41b; 51a, 51b) arranged on a first side (10a) of said semiconductor element (10) facing incited X-ray radiation, said cathode electrode comprising two interdigitated cathode elements (11a, 11b; 21a, 21b; 31a, 31b, 31c, 31ac, 31d; 41a, 41b; 1a, 51b), a pixelated anode electrode (12) arranged on a second side (10b) of said semiconductor element (10) opposite said first side (10a), a power source (13) for applying a bias voltage between said cathode electrode and said anode electrode and for temporarily applying an injection voltage between said cathode elements (11a, 11b; 21a, 21b; 31a, 31b, 31c, 31ac, 31d; 41a, 41b; 51a, 51b), and a readout unit (14) for reading out electrical signals from said pixelated anode electrode (12).

8. 发明授权

US09607606B2 Capacitive micro-machined transducer and method of manufacturing the same 有权
公开(公告)号：US09607606B2
公开(公告)日：2017-03-28
申请号：US14443159
申请日：2013-11-06
申请人： KONINKLIJKE PHILIPS N.V.
发明人： Johan Hendrik Klootwijk , Marcel Mulder , Nico Maris Adriaan De Wild , Koray Karakaya , Cornelius Antonius Van Den Huevel
IPC分类号： H01L21/02 , G10K11/18 , B06B1/02 , C23C16/455 , C23C16/56
CPC分类号： G10K11/18 , B06B1/0292 , C23C16/45525 , C23C16/56
摘要： The present invention relates to a method of manufacturing a capacitive micro-machined transducer (100), in particular a CMUT, the method comprising depositing a first electrode layer (10) on a substrate (1), depositing a first dielectric film (20) on the first electrode layer (10), depositing a sacrificial layer (30) on the first dielectric film (20), the sacrificial layer (30) being removable for forming a cavity (35) of the transducer, depositing a second dielectric film (40) on the sacrificial layer (30), depositing a second electrode layer (50) on the second dielectric film (40), and patterning at least one of the deposited layers and films (10, 20, 30, 40, 50), wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (100), in particular a CMUT, manufactured by such method.

9. 发明授权

US09231496B2 Capacitive micro-machined transducer and method of manufacturing the same 有权
标题翻译：电容式微加工传感器及其制造方法
公开(公告)号：US09231496B2
公开(公告)日：2016-01-05
申请号：US14369341
申请日：2013-01-18
申请人： KONINKLIJKE PHILIPS N.V.
发明人： Peter Dirksen , Ruediger Mauczok , Koray Karakaya , Johan Hendrik Klootwijk , Bout Marcelis , Marcel Mulder
IPC分类号： H02N1/00 , B06B1/02 , B81C1/00 , B81B3/00 , H02N1/08
CPC分类号： H02N1/006 , B06B1/0292 , B81B3/00 , B81B2203/0127 , B81C1/00158 , B81C1/00373 , H02N1/08
摘要： The present invention relates to a method of manufacturing a capacitive micro-machined transducer (100), in particular a CMUT, the method comprising depositing a first electrode layer (10) on a substrate (1), depositing a first dielectric film (20) on the first electrode layer (10), depositing a sacrificial layer (30) on the first dielectric film (20), the sacrificial layer (30) being removable for forming a cavity (35) of the transducer, depositing a second dielectric film (40) on the sacrificial layer (30), and depositing a second electrode layer (50) on the second dielectric film (40), wherein the first dielectric film (20) and/or the second dielectric film (40) comprises a first layer comprising an oxide, a second layer comprising a high-k material, and a third layer comprising an oxide, and wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (100), in particular a CMUT, manufactured by such method.
摘要翻译：本发明涉及一种制造电容微加工的换能器（100），特别是CMUT的方法，该方法包括在衬底（1）上沉积第一电极层（10），沉积第一电介质膜（20）在所述第一电极层（10）上，在所述第一介电膜（20）上沉积牺牲层（30），所述牺牲层（30）可去除以形成所述换能器的空腔（35），沉积第二电介质膜 40），并且在所述第二电介质膜（40）上沉积第二电极层（50），其中所述第一电介质膜（20）和/或所述第二电介质膜（40）包括第一层包括氧化物，包含高k材料的第二层和包含氧化物的第三层，并且其中所述沉积步骤通过原子层沉积进行。本发明还涉及通过这种方法制造的电容式微加工的换能器（100），特别是CMUT。

10. 发明申请

US20150294663A1 CAPACITIVE MICRO-MACHINED TRANSDUCER AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：电容式微机械传动器及其制造方法
公开(公告)号：US20150294663A1
公开(公告)日：2015-10-15
申请号：US14443159
申请日：2013-11-06
申请人： KONINKLIJKE PHILIPS N.V.
发明人： Johan Hendrik Klootwijk , Marcel Mulder , Nico Maris Adriaan De Wild , Koray Karakaya , Cornelius Antonius Van Den Huevel
IPC分类号： G10K11/18 , C23C16/56 , C23C16/455
CPC分类号： G10K11/18 , B06B1/0292 , C23C16/45525 , C23C16/56
摘要： The present invention relates to a method of manufacturing a capacitive micro-machined transducer (100), in particular a CMUT, the method comprising depositing a first electrode layer (10) on a substrate (1), depositing a first dielectric film (20) on the first electrode layer (10), depositing a sacrificial layer (30) on the first dielectric film (20), the sacrificial layer (30) being removable for forming a cavity (35) of the transducer, depositing a second dielectric film (40) on the sacrificial layer (30), depositing a second electrode layer (50) on the second dielectric film (40), and patterning at least one of the deposited layers and films (10, 20, 30, 40, 50), wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (100), in particular a CMUT, manufactured by such method.
摘要翻译：本发明涉及一种制造电容微加工的换能器（100），特别是CMUT的方法，该方法包括在衬底（1）上沉积第一电极层（10），沉积第一电介质膜（20）在所述第一电极层（10）上，在所述第一介电膜（20）上沉积牺牲层（30），所述牺牲层（30）可去除以形成所述换能器的空腔（35），沉积第二电介质膜在所述牺牲层（30）上，在所述第二电介质膜（40）上沉积第二电极层（50），并且对所述沉积层和膜（10,20,30,40,50）中的至少一个进行构图，其中沉积步骤通过原子层沉积进行。本发明还涉及通过这种方法制造的电容式微加工的换能器（100），特别是CMUT。

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