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1. 发明申请

US20180248205A1 FUEL CELL 审中-公开
公开(公告)号：US20180248205A1
公开(公告)日：2018-08-30
申请号：US15891956
申请日：2018-02-08
申请人： KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
发明人： Hirofumi FUNABASHI , Teruhisa AKASHI , Hiroko IGUCHI , Hidehito MATSUO , Shigeo HORI
IPC分类号： H01M8/0289 , H01M8/1016 , H01M8/1007 , H01M8/1097 , H01M8/2425 , H01M8/1004
CPC分类号： H01M8/0289 , H01M8/0267 , H01M8/1004 , H01M8/1007 , H01M8/1016 , H01M8/1097 , H01M8/1246 , H01M8/2425 , H01M2008/1293
摘要： A fuel cell disclosed herein may comprise: a substrate provided with a recess through which fuel gas passes; an electrolyte membrane covering an opening of the recess; an insulating film covering one surface of the electrolyte membrane and having a through hole reaching the electrolyte membrane; a first electrode in contact with the one surface of the electrolyte membrane in the through hole; a second electrode in contact with the other surface of the electrolyte membrane; and a heater disposed in the insulating film at a position adjacent to the through hole.

2. 发明申请

US20180112325A1 Etching Apparatus Used for Photo Electrochemical Etching of Semiconductor Substrate 审中-公开
公开(公告)号：US20180112325A1
公开(公告)日：2018-04-26
申请号：US15711540
申请日：2017-09-21
申请人： KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
发明人： Eiko ISHII , Yumi SAITO , Teruhisa AKASHI , Kenji NAKASHIMA
IPC分类号： C25F3/02 , C25F7/00
CPC分类号： C25F3/02 , C25F7/00 , H01L21/3063
摘要： An etching apparatus having a liquid bath storing an etching liquid, a substrate installation part capable of supporting the semiconductor substrate in vertical placement at a position at which a treatment surface of the semiconductor substrate is immersed in the etching liquid, a sample electrode provided at the substrate installation part and electrically connected to the semiconductor substrate, a counter electrode disposed at a position at which the counter electrode is immersed in the etching liquid in the liquid bath, a light source irradiating the treatment surface of the semiconductor substrate with light, and an irradiation window provided between the treatment surface of the semiconductor substrate and the light source and at a position separated from the semiconductor substrate in a horizontal direction.

3. 发明申请

US20180261856A1 FUEL CELL SYSTEM 审中-公开
公开(公告)号：US20180261856A1
公开(公告)日：2018-09-13
申请号：US15865597
申请日：2018-01-09
申请人： KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
发明人： Teruhisa AKASHI , Hirofumi FUNABASHI , Hidehito MATSUO
IPC分类号： H01M8/04014 , H01M8/0271 , H02J3/38 , H01M8/1018 , H01M8/1007 , H01M8/04089 , H01M8/0289 , H02J1/00 , H01M8/0662
CPC分类号： H01M8/04022 , H01M8/0271 , H01M8/0289 , H01M8/04007 , H01M8/04037 , H01M8/04089 , H01M8/0662 , H01M8/1007 , H01M8/1018 , H01M8/249 , H02J3/387 , H02J7/34 , H02J2001/004
摘要： A fuel cell system may include a first fuel cell provided on a first substrate; a second fuel cell provided on a second substrate, and having a power generation capacity higher than a power generation capacity of the first fuel cell; a first heater provided at the first fuel cell; a second heater provided at the second fuel cell; and a battery, wherein the first heater heats the first fuel cell by using power supplied from the battery, and wherein the second heater heats the second fuel cell by using power supplied from the first fuel cell.

4. 发明申请

US20210035799A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
公开(公告)号：US20210035799A1
公开(公告)日：2021-02-04
申请号：US17030874
申请日：2020-09-24
申请人： DENSO CORPORATION , KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
发明人： Megumi SUZUKI , Yasuo YAMAMOTO , Teruhisa AKASHI
IPC分类号： H01L21/02 , B81C1/00 , H01L23/08 , H01L23/10 , G01P15/08 , H01L21/311 , H01L29/84
摘要： A recess is formed in one silicon substrate. A silicon oxide film is formed in another one silicon substrate at a portion space apart from a space-to-be-formed region. The silicon oxide film has a groove surrounding the space-to-be-formed region and extending to an outer periphery of the other one silicon substrate. Further, the other one silicon substrate and the one silicon substrate are directly bonded to each other via the silicon oxide film so as to cover the groove. A gas discharge passage, a stacking structure of the silicon substrates and the silicon oxide film are formed, and the space is formed inside the stacking structure by the recess. Then, by the heat treatment, the gas inside the space is discharged to the outside of the stacking structure through the gas discharge passage.

5. 发明申请

US20180277874A1 SOLID OXIDE FUEL CELL 审中-公开
公开(公告)号：US20180277874A1
公开(公告)日：2018-09-27
申请号：US15848974
申请日：2017-12-20
申请人： KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
发明人： Hidehito MATSUO , Teruhisa AKASHI , Hirofumi FUNABASHI , Hiroko IGUCHI , Shigeo HORI , Toshihiko TANI
IPC分类号： H01M8/124
摘要： A solid oxide fuel cell includes an Si support substrate having a through hole, an electrolyte film formed on the surface of an Si support substrate and containing a solid oxide having oxygen ion conductivity, a first electrode formed on a surface of the electrolyte film (surface on the side opposite to the Si support substrate), and a second electrode formed at least on a surface exposed from the through hole in a rear face of the electrolyte film. The electrolyte film includes a porous layer including the solid oxide and containing pores inside, a first dense layer formed on a surface of the porous layer (surface on the side opposite to the Si support substrate), and a second dense layer formed at the interface between a rear face of the porous layer and the Si support substrate.

6. 发明申请

US20180277855A1 FUEL CELL 审中-公开
公开(公告)号：US20180277855A1
公开(公告)日：2018-09-27
申请号：US15903858
申请日：2018-02-23
申请人： KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
发明人： Teruhisa AKASHI , Hirofumi FUNABASHI , Hiroko IGUCHI , Hidehito MATSUO , Shigeo HORI
IPC分类号： H01M4/90 , H01M8/1286 , H01M8/1213
摘要： A solid oxide fuel cell is disclosed herein. The fuel cell includes a silicon substrate, an electrolyte film laminated on the silicon substrate, and a gas flow path formed inside the silicon substrate. The electrolyte film is opposed to the gas flow path via an electrode film. A portion of a side wall of the gas flow path has a fillet shape, and the portion is close to the electrolyte film.

7. 发明申请

US20160043066A1 APPARATUS AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：装置及其制造方法
公开(公告)号：US20160043066A1
公开(公告)日：2016-02-11
申请号：US14811965
申请日：2015-07-29
申请人： KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
发明人： Hirofumi FUNABASHI , Takashi OZAKI , Isao AOYAGI , Teruhisa AKASHI , Yoshiteru OMURA , Keiichi SHIMAOKA , Yutaka NONOMURA , Norio FUJITSUKA , Motohiro FUJIYOSHI , Yoshiyuki HATA , Kanae MURATA , Tetsuo NARITA , Kazuyoshi TOMITA
IPC分类号： H01L27/02 , H01L29/20 , H01L23/36 , H01L29/16 , H01L29/778 , H01L29/66
CPC分类号： H01L29/7786 , H01L21/4882 , H01L23/427 , H01L29/1066 , H01L29/2003 , H01L29/41758 , H01L2924/0002 , H01L2924/00
摘要： Teaching disclosed herein is an apparatus comprising a support layer. The support layer may be adapted for supporting a heat generator, wherein the support layer includes a flow passage. The flow passage may seal working fluid therein. The flow passage may extend along a thickness direction of the support layer.
摘要翻译：本文公开的教导是包括支撑层的装置。支撑层可以适于支撑热发生器，其中支撑层包括流动通道。流动通道可以密封其中的工作流体。流动通道可以沿着支撑层的厚度方向延伸。

8. 发明申请

US20140132091A1 MEMS DEVICE 有权
标题翻译： MEMS器件
公开(公告)号：US20140132091A1
公开(公告)日：2014-05-15
申请号：US14079295
申请日：2013-11-13
申请人： KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
发明人： Kanae MURATA , Isao AOYAGI , Yutaka NONOMURA , Teruhisa AKASHI
IPC分类号： H02K33/12
CPC分类号： G02B26/08 , G02B26/0825 , G02B26/085 , G02B26/101 , H02K33/00 , H02K33/16 , H02K2201/18
摘要： A MEMS device includes a substrate, a moving part including a magnetic material and configured to tilt relative to the substrate, a first magnetic pole and a second magnetic pole configured to apply a magnetic field to the magnetic material, and a magnetic field detector configured to detect the magnetic field of the magnetic material. In the MEMS device, the first magnetic pole and the second magnetic pole are disposed on one side of the moving part, the one side being a side on which the magnetic material is located. The magnetic field detector is disposed between the first magnetic pole and the second magnetic pole. A distance between the first magnetic pole and the second magnetic pole is shorter than a length of the moving part in a direction from the first magnetic pole toward the second magnetic pole.
摘要翻译： MEMS器件包括：衬底，包括磁性材料并被配置为相对于衬底倾斜的移动部件;第一磁极和被配置为向磁性材料施加磁场的第二磁极;以及磁场检测器，被配置为检测磁性材料的磁场。在MEMS装置中，第一磁极和第二磁极设置在移动部分的一侧，一侧是磁性材料所在的一侧。磁场检测器设置在第一磁极和第二磁极之间。第一磁极和第二磁极之间的距离比从第一磁极朝向第二磁极的方向的移动部的长度短。

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