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1. 发明申请

US20170301829A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
公开(公告)号：US20170301829A1
公开(公告)日：2017-10-19
申请号：US15640669
申请日：2017-07-03
申请人： Kabushiki Kaisha Toshiba
发明人： Hideyuki TOMIZAWA , Akihiro KOJIMA , Miyoko SHIMADA , Yosuke AKIMOTO , Hideto FURUYAMA , Yoshiaki SUGIZAKI
IPC分类号： H01L33/38 , H01L33/40 , H01L33/42 , H01L33/44 , H01L33/50 , H01L33/48
摘要： According to one embodiment, the p-side electrode is provided on the second semiconductor layer. The insulating film is provided on the p-side electrode. The n-side electrode includes a first portion, a second portion, and a third portion. The first portion is provided on a side face of the first semiconductor layer. The second portion is provided in the first n-side region. The third portion overlaps the p-side electrode via the insulating film and connects the first portion and the second portion to each other.

2. 发明申请

US20150034985A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20150034985A1
公开(公告)日：2015-02-05
申请号：US14153160
申请日：2014-01-13
申请人： Kabushiki Kaisha Toshiba
发明人： Hideyuki TOMIZAWA , Akihiro KOJIMA , Miyoko SHIMADA , Yosuke AKIMOTO , Miyuki SHIMOJUKU , Hideto FURUYAMA , Yoshiaki SUGIZAKI
IPC分类号： H01L33/60 , H01L33/50
CPC分类号： H01L33/60 , H01L33/44 , H01L33/46 , H01L33/486 , H01L33/50 , H01L2933/0033
摘要： According to one embodiment, the optical layer has a larger planar size than the semiconductor layer. The optical layer is transmissive to emission light of the light emitting layer. The first insulating film is provided on a side surface of the semiconductor layer continued from the first surface. The metal film includes a first reflective part covering the side surface of the semiconductor layer via the first insulating film. The metal film includes a second reflective part opposed to the optical layer in a region around the side surface of the semiconductor layer and extending from the first reflective part toward a side opposite from the side surface of the semiconductor layer.
摘要翻译：根据一个实施例，光学层具有比半导体层更大的平面尺寸。光学层对发光层的发射光是透射的。第一绝缘膜设置在从第一表面延续的半导体层的侧表面上。金属膜包括经由第一绝缘膜覆盖半导体层的侧表面的第一反射部分。金属膜包括在半导体层的侧表面周围的区域中与光学层相对的第二反射部分，并且从第一反射部分朝向与半导体层的侧表面相对的一侧延伸。

3. 发明申请

US20130313589A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT SOURCE UNIT 有权
标题翻译：半导体发光器件和光源单元
公开(公告)号：US20130313589A1
公开(公告)日：2013-11-28
申请号：US13779690
申请日：2013-02-27
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Hideyuki TOMIZAWA , Akihiro KOJIMA , Miyoko SHIMADA , Yosuke AKIMOTO , Yoshiaki SUGIZAKI , Hideto FURUYAMA
IPC分类号： H01L33/48
CPC分类号： H01L33/48 , H01L33/56 , H01L2224/18
摘要： According to an embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, n-side electrode and a resin layer. The semiconductor layer has a first face and a second face opposite to the first face, and includes a light emitting layer. The p-side electrode is provided on the semiconductor layer on the second face side. The n-side electrode is provided on the semiconductor layer on the second face side. The resin layer is provided on the first face and transmits light emitted from the light emitting layer, the resin layer including a top surface opposite to the first face and four side faces provided along an outer edge of the first face and connected to the top surface, the resin layer including a scattering substance scattering the light emitted from the light emitting layer.
摘要翻译：根据实施例，半导体发光器件包括半导体层，p侧电极，n侧电极和树脂层。半导体层具有与第一面相反的第一面和第二面，并且包括发光层。 p侧电极设置在第二面侧的半导体层上。 n侧电极设置在第二面侧的半导体层上。树脂层设置在第一面上，透射从发光层发射的光，树脂层包括与第一面相对的顶表面和沿着第一面的外边缘设置的四个侧面，并连接到顶表面所述树脂层包括散射从所述发光层发射的光的散射物质。

4. 发明申请

US20150179907A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：US20150179907A1
公开(公告)日：2015-06-25
申请号：US14642421
申请日：2015-03-09
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Akihiro KOJIMA , Hideto FURUYAMA , Miyoko SHIMADA , Yosuke AKIMOTO
IPC分类号： H01L33/62 , H01L33/46 , H01L33/42
CPC分类号： H01L33/62 , H01L33/387 , H01L33/405 , H01L33/42 , H01L33/46
摘要： A semiconductor light emitting device includes a semiconductor layer including a light emitting layer, a p-side electrode provided on a second surface of the semiconductor layer, and an n-side electrode provided on the semiconductor layer to be separated from the p-side electrode. The p-side electrode includes a plurality of contact metal selectively provided on the semiconductor layer in contact with the second surface, a transparent film provided on the semiconductor layer in contact with the second surface between the plurality of contact metal, and a reflective metal provided on the contact metal and on the transparent film in contact with the contact metal, the reflective metal including silver. A surface area of a surface of the reflective metal on the light emitting layer side is greater than the sum total of a surface area of the plurality of contact metal contacting the semiconductor layer.
摘要翻译：半导体发光器件包括：半导体层，包括发光层，设置在半导体层的第二表面上的p侧电极和设置在半导体层上以从p侧电极分离的n侧电极。 p侧电极包括选择性地设置在与第二表面接触的半导体层上的多个接触金属，设置在与多个接触金属之间的第二表面接触的半导体层上的透明膜和提供的反射金属在接触金属和与接触金属接触的透明膜上，反射金属包括银。发光层侧的反射金属的表面的表面积大于与半导体层接触的多个接触金属的表面积的总和。

5. 发明申请

US20150123159A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20150123159A1
公开(公告)日：2015-05-07
申请号：US14595869
申请日：2015-01-13
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Yoshiaki SUGIZAKI , Hideyuki TOMIZAWA , Akihiro KOJIMA , Hideto FURUYAMA , Miyoko SHIMADA , Yosuke AKIMOTO
IPC分类号： H01L33/62 , H01L33/50
CPC分类号： H01L33/62 , H01L25/167 , H01L33/36 , H01L33/50 , H01L2924/0002 , H01L2924/00
摘要： According to an embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, an second electrode, a first insulating film, a first interconnection and a second interconnection. The semiconductor layer includes a luminous portion and a non-luminous portion. The first electrode is provided on the luminous portion, and the second electrode is provided on the non-luminous portion. The first insulating film is provided on the semiconductor layer, the first electrode and the second electrode. The first interconnection having a first protrusion is provided on the first insulating film and electrically connected to the first electrode. The second interconnection having a second protrusion is provided on the first insulating film and electrically connected to the second electrode. A tip end of the first protrusion faces a tip end of a second protrusion, being apart therefrom with a minimum gap between the first interconnection and the second interconnection.
摘要翻译：根据实施例，半导体发光器件包括半导体层，第一电极，第二电极，第一绝缘膜，第一互连和第二互连。半导体层包括发光部分和非发光部分。第一电极设置在发光部分上，第二电极设置在非发光部分上。第一绝缘膜设置在半导体层，第一电极和第二电极上。具有第一突起的第一互连设置在第一绝缘膜上并与第一电极电连接。具有第二突起的第二互连设置在第一绝缘膜上并电连接到第二电极。第一突起的尖端面向第二突起的末端，与第一突起的顶端分开，并且在第一互连和第二互连之间具有最小的间隙。

6. 发明申请

US20150054004A1 LIGHT EMITTING MODULE 审中-公开
标题翻译：发光模块
公开(公告)号：US20150054004A1
公开(公告)日：2015-02-26
申请号：US14532671
申请日：2014-11-04
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Akihiro KOJIMA , Hideto FURUYAMA , Miyoko SHIMADA , Yosuke AKIMOTO , Hideyuki TOMIZAWA
IPC分类号： H01L33/42 , H01L33/48 , H01L33/50 , H01L27/15
CPC分类号： H01L33/42 , H01L25/0753 , H01L27/156 , H01L33/486 , H01L33/507 , H01L33/508 , H01L33/52 , H01L33/62 , H01L2224/16 , H01L2933/0091
摘要： According to one embodiment, a light emitting module includes a mounting substrate, a plurality of light emitting chips, a transparent layer, and a phosphor layer. The transparent layer is provided between the plurality of light emitting chips on the mounting face and on the light emitting chip. The transparent layer has a first transparent body and a scattering agent dispersed at least in the first transparent body between the plurality of light emitting chips. The scattering agent has a different refraction index from a refraction index of the first transparent body. The phosphor layer is provided on the transparent layer. The light emitting chip includes a semiconductor layer, a p-side electrode, an n-side electrode, a p-side external terminal, and an n-side external terminal.
摘要翻译：根据一个实施例，发光模块包括安装基板，多个发光芯片，透明层和荧光体层。透明层设置在安装面上的多个发光芯片和发光芯片之间。透明层具有至少分散在多个发光芯片之间的第一透明体中的第一透明体和散射剂。散射剂具有与第一透明体的折射率不同的折射率。荧光体层设置在透明层上。发光芯片包括半导体层，p侧电极，n侧电极，p侧外部端子和n侧外部端子。

7. 发明申请

US20130313592A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
公开(公告)号：US20130313592A1
公开(公告)日：2013-11-28
申请号：US13784770
申请日：2013-03-04
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Yoshiaki SUGIZAKI , Hideyuki TOMIZAWA , Akihiro KOJIMA , Hideto FURUYAMA , Miyoko SHIMADA , Yosuke AKIMOTO
IPC分类号： H01L33/36
CPC分类号： H01L33/62 , H01L25/167 , H01L33/36 , H01L33/50 , H01L2924/0002 , H01L2924/00
摘要： According to an embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, an second electrode, a first insulating film, a first interconnection and a second interconnection. The semiconductor layer includes a luminous portion and a non-luminous portion. The first electrode is provided on the luminous portion, and the second electrode is provided on the non-luminous portion. The first insulating film is provided on the semiconductor layer, the first electrode and the second electrode. The first interconnection having a first protrusion is provided on the first insulating film and electrically connected to the first electrode. The second interconnection having a second protrusion is provided on the first insulating film and electrically connected to the second electrode. A tip end of the first protrusion faces a tip end of a second protrusion, being apart therefrom with a minimum gap between the first interconnection and the second interconnection.

8. 发明申请

US20130313591A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：US20130313591A1
公开(公告)日：2013-11-28
申请号：US13781729
申请日：2013-02-28
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Miyoko SHIMADA , Akihiro KOJIMA , Yosuke AKIMOTO , Hideyuki TOMIZAWA , Hideto FURUYAMA , Yoshiaki SUGIZAKI
IPC分类号： H01L33/36
CPC分类号： H01L33/36 , H01L21/6835 , H01L23/295 , H01L23/3171 , H01L23/3192 , H01L24/05 , H01L24/96 , H01L33/0079 , H01L33/486 , H01L2221/6835 , H01L2221/68354 , H01L2221/68381 , H01L2224/0346 , H01L2224/0347 , H01L2224/0401 , H01L2224/05567 , H01L2224/05571 , H01L2224/0603 , H01L2224/96 , H01L2924/12042 , H01L2933/0066 , H01L2224/13147 , H01L2924/00014 , H01L2224/03 , H01L2924/00
摘要： According to an embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode and an insulating layer. The semiconductor layer has a first face and a second face opposite to the first face, and includes a light emitting layer. The p-side electrode is provided in a region including the light emitting layer on the second face side, and the n-side electrode is provided in a region not including the light emitting layer on the second face side. The insulating layer covers the semiconductor layer, the p-side electrode, and the n-side electrode on the second face side, and includes at least a portion containing a magnetic substance.
摘要翻译：根据实施例，半导体发光器件包括半导体层，p侧电极，n侧电极和绝缘层。半导体层具有与第一面相反的第一面和第二面，并且包括发光层。 p侧电极设置在第二面侧的包含发光层的区域中，n侧电极设置在第二面侧的不包含发光层的区域中。绝缘层覆盖第二面侧的半导体层，p侧电极和n侧电极，并且至少包含含有磁性物质的部分。

9. 发明申请

US20130313590A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20130313590A1
公开(公告)日：2013-11-28
申请号：US13781683
申请日：2013-02-28
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Yosuke AKIMOTO , Yoshiaki SUGIZAKI , Hideyuki TOMIZAWA , Masanobu ANDO , Akihiro KOJIMA , Gen WATARI , Naoya USHIYAMA , Tetsuro KOMATSU , Miyoko SHIMADA , Hideto FURUYAMA
IPC分类号： H01L33/44
CPC分类号： H01L33/62 , H01L27/15 , H01L33/44 , H01L33/486 , H01L33/502 , H01L33/54 , H01L2224/16
摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first interconnection section, a second interconnection section, and a varistor film. The semiconductor layer includes a light emitting layer. The first electrode is provided in a emitting region on the second surface. The second electrode is provided in a non-emitting region on the second surface. The first interconnection section is provided on the first electrode and electrically connected to the first electrode. The second interconnection section is provided on the second electrode and on the first electrode and electrically connected to the second electrode. The varistor film is provided in contact with the first electrode and the second interconnection section between the first electrode and the second interconnection section.
摘要翻译：根据一个实施例，半导体发光器件包括半导体层，第一电极，第二电极，第一互连部分，第二互连部分和可变电阻膜。半导体层包括发光层。第一电极设置在第二表面上的发射区域中。第二电极设置在第二表面上的不发射区域中。第一互连部分设置在第一电极上并电连接到第一电极。第二互连部分设置在第二电极和第一电极上并电连接到第二电极。非线性电阻膜设置成与第一电极和第二互连部分在第一电极和第二互连部分之间接触。

10. 发明申请

US20150221828A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：US20150221828A1
公开(公告)日：2015-08-06
申请号：US14688240
申请日：2015-04-16
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Yosuke AKIMOTO , Yoshiaki SUGIZAKI , Akihiro KOJIMA , Miyoko SHIMADA , Hideyuki TOMIZAWA , Hideto FURUYAMA
IPC分类号： H01L33/40 , H01L33/38
CPC分类号： H01L33/405 , H01L33/36 , H01L33/382 , H01L33/387 , H01L33/60 , H01L33/62 , H01L2224/13 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, a p-side electrode, a plurality of n-side electrodes, a first insulating film, a p-side interconnect unit, and an n-side interconnect unit. The p-side interconnect unit is provided on the first insulating film to connect to the p-side electrode through a first via piercing the first insulating film. The n-side interconnect unit is provided on the first insulating film to commonly connect to the plurality of n-side electrodes through a second via piercing the first insulating film. The plurality of n-side regions is separated from each other without being linked at the second surface. The p-side region is provided around each of the n-side regions at the second surface.
摘要翻译：根据一个实施例，半导体发光器件包括第一半导体层，发光层，第二半导体层，p侧电极，多个n侧电极，第一绝缘膜，p侧互连单元和n侧互连单元。 p侧互连单元设置在第一绝缘膜上，以通过穿过第一绝缘膜的第一通孔连接到p侧电极。 n侧互连单元设置在第一绝缘膜上，以通过刺穿第一绝缘膜的第二通孔共同连接到多个n侧电极。多个n侧区域彼此分离，而不在第二表面处被连接。 p侧区域设置在第二表面的n侧区域的周围。

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