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1. 发明公开

US20240072191A1 LIGHT DETECTOR, LIGHT DETECTION SYSTEM, LIDAR DEVICE, AND MOBILE BODY 审中-公开
公开(公告)号：US20240072191A1
公开(公告)日：2024-02-29
申请号：US18174597
申请日：2023-02-24
申请人： Kabushiki Kaisha Toshiba
发明人： Mariko SHIMIZU , Kazuhiro SUZUKI , Ikuo FUJIWARA , Ryoma KANEKO , Keita SASAKI
IPC分类号： H01L31/107 , H01L31/0232
CPC分类号： H01L31/107 , H01L31/02327 , G01S7/4865
摘要： A light detector includes a semiconductor layer and a light-receiving element. The semiconductor layer is of a first conductivity type. The light-receiving element includes a first semiconductor region, a second semiconductor region, a third semiconductor region, and a fourth semiconductor region. The first semiconductor region is of a second conductivity type. The second semiconductor region is located between the first semiconductor region and the semiconductor layer. The second semiconductor region is of the first conductivity type and contacts the first semiconductor region. The third semiconductor region is located between the second semiconductor region and the semiconductor layer. The third semiconductor region is of the second conductivity type. The fourth semiconductor region is located between the third semiconductor region and the semiconductor layer. The fourth semiconductor region is of the first conductivity type, and has a lower first-conductivity-type impurity concentration than a first-conductivity-type impurity concentration of the semiconductor layer.

2. 发明申请

US20210132230A1 LIGHT DETECTOR, LIGHT DETECTION SYSTEM, LIDAR DEVICE, AND VEHICLE 有权
公开(公告)号：US20210132230A1
公开(公告)日：2021-05-06
申请号：US17015165
申请日：2020-09-09
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Ikuo FUJIWARA , Honam KWON , Yuki NOBUSA , Keita SASAKI , Kazuhiro SUZUKI , Masaki ATSUTA
IPC分类号： G01S17/931 , H01L31/107 , G01S7/481 , G01S17/89
摘要： According to one embodiment, a light detector includes an element including a photodiode. A plurality of the elements are provided. The element includes a structure body for at least a portion of the plurality of elements. The structure body surrounds the photodiode and has a different refractive index from the photodiode. At least portions of the structure bodies are separated from each other.

3. 发明申请

US20160079464A1 PHOTODETECTOR 有权
标题翻译：照相机
公开(公告)号：US20160079464A1
公开(公告)日：2016-03-17
申请号：US14840316
申请日：2015-08-31
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Keita SASAKI , Risako UENO , Hideyuki FUNAKI
IPC分类号： H01L31/103 , H01L31/028 , H01L31/02 , H01L27/144 , H01L31/0232 , H01L31/0216
CPC分类号： H01L31/103 , H01L27/14629 , H01L27/14634 , H01L27/14636 , H01L27/14647 , H01L27/1469 , H01L31/02005 , H01L31/02161 , H01L31/02327 , H01L31/028
摘要： According to a photodetector includes a first light detection layer and a reflective layer. The first light detection layer has a first surface and a second surface on a side opposite to the first surface. The first light detection layer includes a first light detection area including a p-n junction of a p-type semiconductor layer containing Si and an n-type semiconductor layer containing Si. The reflective layer arranged on a second surface side of the first light detection layer so as to be opposed to the first light detection area. The reflective layer reflects at least part of light in a near-infrared range.
摘要翻译：根据光检测器包括第一光检测层和反射层。第一光检测层在与第一表面相对的一侧具有第一表面和第二表面。第一光检测层包括包含含有Si的p型半导体层和含有Si的n型半导体层的p-n结的第一光检测区域。所述反射层布置在所述第一光检测层的第二表面侧上以与所述第一光检测区域相对。反射层反射近红外范围的至少一部分光。

4. 发明申请

US20140367576A1 PHOTODETECTOR AND COMPUTED TOMOGRAPHY APPARATUS 有权
标题翻译：照相机和计算机摄影装置
公开(公告)号：US20140367576A1
公开(公告)日：2014-12-18
申请号：US14282048
申请日：2014-05-20
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Keita SASAKI , Shunsuke Kimura
IPC分类号： G01J1/44
CPC分类号： G01T1/248 , G01J1/44 , G01T1/1647 , G01T1/2018
摘要： A photodetector according to an embodiment includes: a photodetector element unit including a first cell array including a plurality of first cells arranged in an array and a second cell array including a plurality of second cells arranged in an array, each of the first and second cells including a photoelectric conversion element, the second cell array being arranged to be adjacent to the first cell array; a first pulse height analyzer unit analyzing a pulse height of an electrical signal outputted from the first cell array; a second pulse height analyzer unit analyzing a pulse height of an electrical signal outputted from the second cell array; and a signal processing unit determining non-uniformity of a distribution of photons entering the first and second cell arrays using an output signal of the first pulse height analyzer unit and an output signal of the second pulse height analyzer unit.
摘要翻译：根据实施例的光电检测器包括：光电检测器元件单元，包括包括排列成阵列的多个第一单元的第一单元阵列和包括排列成阵列的多个第二单元的第二单元阵列，第一单元阵列和第二单元包括光电转换元件，所述第二单元阵列布置成与所述第一单元阵列相邻; 第一脉冲高度分析器单元，分析从第一单元阵列输出的电信号的脉冲高度; 第二脉冲高度分析器单元，分析从第二单元阵列输出的电信号的脉冲高度; 以及信号处理单元，其使用第一脉冲高度分析器单元的输出信号和第二脉冲高度分析器单元的输出信号来确定进入第一和第二单元阵列的光子的分布的不均匀性。

5. 发明公开

US20240094349A1 LIGHT DETECTOR, LIGHT DETECTION SYSTEM, AND LIDAR DEVICE 审中-公开
公开(公告)号：US20240094349A1
公开(公告)日：2024-03-21
申请号：US18169514
申请日：2023-02-15
申请人： Kabushiki Kaisha Toshiba
发明人： Keita SASAKI , Mariko SHIMIZU , Kazuhiro SUZUKI
IPC分类号： G01S7/481 , G01S17/08
CPC分类号： G01S7/4816 , G01S17/08
摘要： A light detector according to one embodiment, includes a substrate. The substrate includes a first semiconductor layer, an insulating layer, and a second semiconductor layer. The insulating layer is located on the first semiconductor layer. The second semiconductor layer is located on the insulating layer. The second semiconductor layer includes a photoelectric conversion part. The photoelectric conversion part includes a first semiconductor region and a second semiconductor region. The substrate includes a void and a trench. The void is positioned below the photoelectric conversion part and between the first semiconductor layer and the second semiconductor layer. The trench surrounds the photoelectric conversion part. A lower end of the trench is positioned in the second semiconductor layer. The photoelectric conversion part is electrically connected with an upper surface side of the substrate via a portion below the trench.

6. 发明公开

US20230299103A1 LIGHT DETECTOR, LIGHT DETECTION SYSTEM, LIDAR DEVICE, AND MOBILE BODY 审中-公开
公开(公告)号：US20230299103A1
公开(公告)日：2023-09-21
申请号：US17822417
申请日：2022-08-25
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Ryomo KANEKO , Mariko SHIMIZU , Keita SASAKI , Honam KWON , Ikuo FUJIWARA , Kazuhiro SUZUKI
IPC分类号： H01L27/146 , G01S17/89
CPC分类号： H01L27/14623 , H01L27/1463 , G01S17/89 , H01L27/14649 , H01L27/14627
摘要： A light detector according to one embodiment, includes an element region, a light concentrator, a structure part and a light-shielding part. The element region includes a first semiconductor region of a first conductivity type, and a second semiconductor region of a second conductivity type. The light concentrator is separated from the element region in a first direction. The light concentrator is configured to concentrate light incident on the light concentrator. The structure part is arranged with the element region in a direction crossing the first direction. The structure part has a different refractive index from the element region. The light-shielding part is located between the element region and the light concentrator. The light-shielding part includes an opening. At least a portion of the light incident on the light concentrator is able to be incident on the element region by passing through the opening.

7. 发明申请

US20210293967A1 LIGHT DETECTOR, LIGHT DETECTION SYSTEM, LIDAR DEVICE, AND VEHICLE 有权
公开(公告)号：US20210293967A1
公开(公告)日：2021-09-23
申请号：US17015774
申请日：2020-09-09
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Ikuo FUJIWARA , Honam KWON , Keita SASAKI , Kazuhiro SUZUKI , Masaki ATSUTA , Mariko SHIMIZU , Kazuaki OKAMOTO
IPC分类号： G01S17/931 , H01L31/107 , G01S17/89 , G01S7/481
摘要： According to one embodiment, a light detector includes an element, and a structure body. The element includes a first semiconductor region, a second semiconductor region, and a third semiconductor region. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided on the second semiconductor region. The structure body is provided around the element. The structure body includes first and second insulating portions and a metal-including portion. The metal-including portion is provided above the first insulating portion. A position in the first direction of a portion of the metal-including portion is same as a position in the first direction of the third semiconductor region. The second insulating portion is positioned between the metal-including portion and the element in the first plane. A thickness of the first insulating portion is greater than a thickness of the second insulating portion in the first plane.

8. 发明申请

US20210082986A1 LIGHT DETECTOR, LIGHT DETECTION SYSTEM, LIDAR DEVICE, AND VEHICLE 有权
公开(公告)号：US20210082986A1
公开(公告)日：2021-03-18
申请号：US16815987
申请日：2020-03-11
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Honam KWON , lkuo FUJIWARA , Keita SASAKI , Kazuhiro SUZUKI
IPC分类号： H01L27/146 , G01S17/931 , H01L31/107 , H01L31/02
摘要： According to one embodiment, a light detector includes an element and a quenching resistance. The element includes a photodiode. The quenching resistance is electrically connected to the element. The quenching resistance includes a semiconductor member and a plurality of first metal members. The plurality of first metal members is electrically connected to the semiconductor member and separated from each other.

9. 发明申请

US20150241282A1 IMAGING DEVICE 审中-公开
标题翻译：成像装置
公开(公告)号：US20150241282A1
公开(公告)日：2015-08-27
申请号：US14693661
申请日：2015-04-22
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Hiroto HONDA , Kazuhiro SUZUKI , Hideyuki FUNAKI , Masaki ATSUTA , Keita SASAKI , Koichi ISHII , Honam KWON
IPC分类号： G01J5/06 , G01J5/12 , G01J5/02 , H04N5/33 , G01J5/22
CPC分类号： G01J5/12 , G01J5/023 , G01J5/20 , G01J5/22 , G01J2005/0077 , H01L27/14649 , H04N5/33
摘要： An imaging device according to an embodiment includes: a semiconductor substrate; a reference pixel with a first concave portion disposed in a first portion of a surface of the semiconductor substrate; and one or more infrared detection pixels each configured to detect light with a second concave portion disposed in a second portion of the surface of the semiconductor substrate, the reference pixel being directly connected to the semiconductor substrate at a position where the first concave portion is not present, and including a first thermoelectric conversion unit configured to convert heat to an electric signal, the first thermoelectric conversion unit being disposed in the first concave portion and including a first thermoelectric conversion element, each infrared detection pixel including a second thermoelectric conversion unit being disposed in the second concave portion and including a second thermoelectric conversion element.
摘要翻译：根据实施例的成像装置包括：半导体衬底; 参考像素，其具有设置在所述半导体衬底的表面的第一部分中的第一凹部; 以及一个或多个红外检测像素，每个红外检测像素被配置为利用设置在所述半导体衬底的表面的第二部分中的第二凹部来检测光，所述参考像素在所述第一凹部不在所述位置处直接连接到所述半导体衬底存在并且包括被配置为将热量转换为电信号的第一热电转换单元，第一热电转换单元设置在第一凹部中并且包括第一热电转换元件，每个红外检测像素包括第二热电转换单元，在第二凹部中并且包括第二热电转换元件。

10. 发明申请

US20150084149A1 RADIATION DETECTOR AND RADIATION DETECTION APPARATUS 审中-公开
标题翻译：辐射探测器和辐射检测装置
公开(公告)号：US20150084149A1
公开(公告)日：2015-03-26
申请号：US14478424
申请日：2014-09-05
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Hitoshi YAGI , Rei HASEGAWA , Masaki ATSUTA , Yasuharu HOSONO , Keita SASAKI , Go KAWATA
IPC分类号： H01L27/146 , H01L31/0224
CPC分类号： H01L27/14663 , H01L27/1463 , H01L27/14636 , H01L31/0224
摘要： A radiation detector according to an embodiment includes: a semiconductor substrate; a light detecting unit provided on a side of a first surface of the semiconductor substrate; a first insulating film provided covering the light detecting unit; a second insulating film covering the first insulating film; a scintillator provided on the second insulating film; an interconnection provided between the first and second insulating films, and connected to the light detecting unit; a first electrode connected to the interconnection through a bottom portion of the first opening; a second electrode provided on a region in the second surface of the semiconductor substrate, the region opposing at least a part of the light detecting unit; a second opening provided in a region surrounding the first electrode and not surrounding the second electrode; and an insulating resin layer covering the first and second electrodes and the first and second openings.
摘要翻译：根据实施例的辐射检测器包括：半导体衬底; 设置在所述半导体衬底的第一表面侧的光检测单元; 提供覆盖光检测单元的第一绝缘膜; 覆盖所述第一绝缘膜的第二绝缘膜; 设置在第二绝缘膜上的闪烁体; 设置在第一和第二绝缘膜之间并连接到光检测单元的互连; 通过第一开口的底部连接到互连的第一电极; 设置在所述半导体衬底的第二表面中的区域上的第二电极，所述区域与所述光检测单元的至少一部分相对; 第二开口，设置在围绕所述第一电极且不包围所述第二电极的区域中; 以及覆盖第一和第二电极以及第一和第二开口的绝缘树脂层。

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