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    • 7. 发明申请
    • APPARATUS FOR TESTING RESISTIVITY OF SEMICONDUCTOR AND METHOD FOR TESTING RESISTIVITY OF SEMICONDUCTOR
    • 用于测试半导体电阻率的装置和测试半导体电阻率的方法
    • US20150077143A1
    • 2015-03-19
    • US14207996
    • 2014-03-13
    • Kabushiki Kaisha Toshiba
    • Akira MAEKAWA
    • G01R27/02G01N21/47
    • G01R27/02G01N21/3563G01N21/47G01N21/9501G01R27/2682
    • According to one embodiment, an apparatus is configured to test a resistivity of a semiconductor formed on a matrix. The apparatus includes: a first and a second choppers; an irradiation unit; a detector; a first ans a second lock-in amplifiers; and a computer. The first lock-in amplifier is configured to detect a signal with the first chopping frequency out of a signal transmitted from the detector. The second lock-in amplifier is configured to detect a signal with the second chopping frequency out of a signal transmitted from the detector. The computer is configured to estimate a ratio between a reflectance of the infrared light with the first wavelength out of the reflected light and a reflectance of the infrared light with the second wavelength out of the reflected light on the basis of signals transmitted from the first lock-in amplifier and the second lock-in amplifier.
    • 根据一个实施例,一种装置被配置为测试形成在矩阵上的半导体的电阻率。 该装置包括:第一和第二斩波器; 照射单元; 检测器 第一个和第二个锁定放大器; 和电脑。 第一锁定放大器被配置为从检测器发送的信号中检测出具有第一斩波频率的信号。 第二锁定放大器被配置为从从检测器发送的信号中检测具有第二斩波频率的信号。 计算机被配置为基于从第一锁定发送的信号来估计来自反射光的红外光与第一波长的反射率与反射光之间的具有第二波长的红外光的反射率之间的比率 - 放大器和第二个锁定放大器。