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1. 发明授权

US06566243B2 Dielectric layer including silicalite crystals and binder and method for producing same for microelectronic circuits 有权
公开(公告)号：US06566243B2
公开(公告)日：2003-05-20
申请号：US09974067
申请日：2001-10-09
申请人： Justin F. Gaynor
发明人： Justin F. Gaynor
IPC分类号： H01L2131
CPC分类号： H01L21/76813 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02304 , H01L21/02312 , H01L21/02337 , H01L21/02359 , H01L21/31695 , H01L21/7682 , H01L2221/1047 , Y10S977/888 , Y10S977/891 , Y10T428/31663
摘要： A two-component porous material including small silicalite crystals in a porous binder provides a low dielectric constant material useful as an insulating layer in microelectronic devices. The silicalite/binder porous material uses silicalite nanocrystals smaller than the characteristic dimensions of the features on the integrated circuit device. The binder is an amorphous porous material that links the silicalite nanocrystals together, formed from a precursor which polymerizes on heating. The silicalite nanocrystals are supplied as a colloidal suspension or slurry. The slurry and binder precursor are spincoated onto a substrate and thermally treated to polymerize the binder precursor and drive off solvent in the slurry, forming the porous silicalite/binder material. The silicalite/binder porous material is readily integrated into standard damascene fabrication processes.

2. 发明授权

US06211035B1 Integrated circuit and method 有权
标题翻译：集成电路及方法
公开(公告)号：US06211035B1
公开(公告)日：2001-04-03
申请号：US09392988
申请日：1999-09-09
申请人： Theodore S. Moise , Guoqiang Xing , Mark Visokay , Justin F. Gaynor , Stephen R. Gilbert , Francis Celii , Scott R. Summerfelt , Luigi Colombo
发明人： Theodore S. Moise , Guoqiang Xing , Mark Visokay , Justin F. Gaynor , Stephen R. Gilbert , Francis Celii , Scott R. Summerfelt , Luigi Colombo
IPC分类号： H01L2120
CPC分类号： H01L27/11502 , H01L21/0332 , H01L21/31116 , H01L21/31144 , H01L27/10852 , H01L27/11507 , H01L28/55
摘要： A via etch to contact a capacitor with ferroelectric between electrodes together with dielectric on an insulating diffusion barrier includes two-step etch with F-based dielectric etch and Cl- and F-based barrier etch.
摘要翻译：在电极之间与电介质之间的电介质与绝缘扩散阻挡层之间的电介质接触电容器的通孔蚀刻包括基于F的电介质蚀刻和基于Cl和F的势垒蚀刻的两步蚀刻。

3. 发明授权

US06873026B1 Inhomogeneous materials having physical properties decoupled from desired functions 失效
标题翻译：具有与期望功能分离的物理性质的不均匀材料
公开(公告)号：US06873026B1
公开(公告)日：2005-03-29
申请号：US10092201
申请日：2002-03-04
申请人： Paul E. Brunemeier , Archita Sengupta , Justin F. Gaynor , Robert H. Havemann
发明人： Paul E. Brunemeier , Archita Sengupta , Justin F. Gaynor , Robert H. Havemann
IPC分类号： C08J3/28 , G03F7/004 , H01B3/46 , H01K1/02 , H01L21/312
CPC分类号： H01L21/02126 , G03F7/0047 , H01B3/46 , H01L21/02203 , H01L21/3124
摘要： A composition comprises a first component that provides a predetermined response to radiation, and a second component. Upon curing of the composition, portions of the first component bind together portions of the second component to form an inhomogeneous material having physical properties substantially determined by the second component. The function provided by the first component's response to radiation and the macroscopic properties determined by the second component are largely decoupled and thus may be separately optimized. Some embodiments provide photo-patternable low dielectric constant materials that may be advantageously employed in metal interconnect layers in integrated circuits, for example.
摘要翻译：组合物包括提供对辐射的预定响应的第一组分和第二组分。在组合物固化时，第一组分的部分将第二组分的部分结合在一起，以形成具有基本上由第二组分确定的物理性能的不均匀材料。由第一部件对辐射的响应提供的功能和由第二部件确定的宏观特性在很大程度上解耦，因此可以单独优化。一些实施例提供例如可以有利地用于集成电路中的金属互连层中的光可图案化的低介电常数材料。

4. 发明授权

US06706623B1 Method and system for avoiding plasma etch damage 有权
标题翻译：避免等离子体蚀刻损伤的方法和系统
公开(公告)号：US06706623B1
公开(公告)日：2004-03-16
申请号：US09346435
申请日：1999-07-01
申请人： Justin F. Gaynor
发明人： Justin F. Gaynor
IPC分类号： H01L214763
CPC分类号： H01L21/76802 , H01L21/0274 , H01L21/31144 , H01L21/76838
摘要： An electronic device and method of construction are disclosed that provide for a dielectric layer (12) having a low dielectric constant. A conductive sheath layer (18) is disposed adjacent to the dielectric layer (12). The conductive sheath layer (18) is operable to electrically divert etchant particles used in a plasma etch process away from the dielectric layer (12). In another embodiment of the disclosed invention, a method is provided which comprises covering an inner layer (40) with a layer of dielectric material (42). The method also comprises depositing a conductive sheath layer (48) outwardly from the layer of dielectric material (42). A photoresist layer (50) is then deposited outwardly from the conductive sheath layer (48). The photoresist layer (50) is then patterned resulting in a patterned mask composed of portions of the photoresist layer (50) disposed outwardly from the conductive sheath layer (48). Portions of the conductive sheath layer (48) not covered by the patterned mask are etched using a plasma etch process selective to the conductive sheath layer (48) relative to the photoresist layer (50). Portions of the dielectric layer (42) not covered by the patterned mask are also etched using a plasma etch process selective to the dielectric layer (42) relative to the photoresist layer (50). The photoresist layer (50) is then removed from the conductive sheath layer (48), the conductive sheath layer (48) providing mechanical and electrical shielding for the dielectric layer (42).
摘要翻译：公开了一种提供具有低介电常数的介电层（12）的电子器件和结构方法。导电护套层（18）邻近电介质层（12）设置。导电护套层（18）可操作以将等离子体蚀刻工艺中使用的蚀刻剂电极电离转移离开电介质层（12）。在所公开的发明的另一个实施例中，提供了一种方法，其包括用介电材料层（42）覆盖内层（40）。该方法还包括从电介质材料层（42）向外沉积导电护套层（48）。然后将光致抗蚀剂层（50）从导电护套层（48）向外沉积。然后对光致抗蚀剂层（50）进行构图，从而形成由从导电护套层（48）向外设置的光致抗蚀剂层（50）的部分构成的图案化掩模。使用对导电护套层（48）相对于光致抗蚀剂层（50）选择性的等离子体蚀刻工艺蚀刻未被图案化掩模覆盖的导电护套层（48）的部分。也不使用图案化掩模覆盖的电介质层（42）的部分使用相对于光致抗蚀剂层（50）对介电层（42）选择性的等离子体蚀刻工艺进行蚀刻。然后从导电护套层（48）去除光致抗蚀剂层（50），导电护套层（48）为电介质层（42）提供机械和电屏蔽。

5. 发明授权

US07083991B2 Method of in-situ treatment of low-k films with a silylating agent after exposure to oxidizing environments 有权
标题翻译：暴露于氧化环境后用甲硅烷基化剂原位处理低k膜的方法
公开(公告)号：US07083991B2
公开(公告)日：2006-08-01
申请号：US11065624
申请日：2005-02-24
申请人： Justin F. Gaynor
发明人： Justin F. Gaynor
IPC分类号： H01L21/00
CPC分类号： H01L21/31058 , H01L21/02126 , H01L21/02134 , H01L21/02137 , H01L21/02203 , H01L21/02337 , H01L21/67155 , H01L21/76814 , H01L21/76826
摘要： Method and apparatus for using a silylating agent after exposure to an oxidizing environment for repairing damage to low-k dielectric films are described. Plasma photoresist removal, or ashing, may damage bonds in the low-k materials, which may lead to a significant increase in the dielectric constant of the materials. The silylating agent may be used to repair damage to the low-k films after the ashing process. Additionally, a curing process using an oxidizing environment may damage bonds in low-k materials, which may subsequently be repaired by a silylating process. The described method and apparatus may be used with low-k dielectric films including hydrophobic porous oxide films. A chamber for processing a wafer in an oxidizing environment and subsequently performing a silylation process includes an oxidizing agent inlet and a silylating agent inlet. Additionally, a chamber for performing an etch process, processing a wafer in an oxidizing environment, and subsequently performing a silylation process includes an oxidizing agent inlet, a silylating agent inlet, and an etch gas inlet. A cluster tool can include a chamber for processing a wafer in an oxidizing environment and subsequently performing a silylation process, a wafer in/out module, and may include additional processing modules such as etch modules, deposition modules for depositing low-k layers, and deposition modules for depositing cap layers.
摘要翻译：描述了在暴露于氧化环境之后使用甲硅烷基化剂以修复对低k电介质膜的损伤的方法和装置。等离子体光致抗蚀剂去除或灰化可能损坏低k材料中的键，这可能导致材料的介电常数的显着增加。甲硅烷化剂可用于在灰化过程后修复对低k膜的损伤。另外，使用氧化环境的固化方法可能损坏低k材料中的键，随后可以通过甲硅烷基化方法修复。所描述的方法和装置可以与包括疏水性多孔氧化物膜的低k电介质膜一起使用。用于在氧化环境中处理晶片并随后进行甲硅烷化处理的室包括氧化剂入口和甲硅烷基化剂入口。另外，用于进行蚀刻处理的室，在氧化环境中处理晶片，随后进行甲硅烷基化处理包括氧化剂入口，甲硅烷基化剂入口和蚀刻气体入口。集群工具可以包括用于在氧化环境中处理晶片并且随后执行硅烷化工艺，晶片入/出模块的腔室，并且可以包括附加的处理模块，例如蚀刻模块，用于沉积低k层的沉积模块，以及用于沉积盖层的沉积模块。

6. 发明授权

US06902939B2 Integrated circuit and method 有权
标题翻译：集成电路及方法
公开(公告)号：US06902939B2
公开(公告)日：2005-06-07
申请号：US10223643
申请日：2002-08-19
申请人： Theodore S. Moise , Guoqiang Xing , Mark Visokay , Justin F. Gaynor , Stephen R. Gilbert , Francis Celii , Scott R. Summerfelt , Luigi Colombo
发明人： Theodore S. Moise , Guoqiang Xing , Mark Visokay , Justin F. Gaynor , Stephen R. Gilbert , Francis Celii , Scott R. Summerfelt , Luigi Colombo
IPC分类号： H01L21/302 , H01L21/02 , H01L21/033 , H01L21/3065 , H01L21/311 , H01L21/8242 , H01L21/8246 , H01L27/115 , H01L21/00
CPC分类号： H01L27/11502 , H01L21/0332 , H01L21/31116 , H01L21/31144 , H01L27/10852 , H01L27/11507 , H01L28/55
摘要： A via etch to contact a capacitor with ferroelectric between electrodes together with dielectric on an insulating diffusion barrier includes two-step etch with F-based dielectric etch and Cl- and F-based barrier etch.
摘要翻译：在电极之间与电介质之间的电介质与绝缘扩散阻挡层之间的电介质接触电容器的通孔蚀刻包括基于F的电介质蚀刻和基于Cl和F的势垒蚀刻的两步蚀刻。

7. 发明授权

US06533855B1 Dispersions of silicalite and zeolite nanoparticles in nonpolar solvents 有权
标题翻译：硅沸石和沸石纳米颗粒在非极性溶剂中的分散体
公开(公告)号：US06533855B1
公开(公告)日：2003-03-18
申请号：US09782985
申请日：2001-02-13
申请人： Justin F. Gaynor , Judy Huang
发明人： Justin F. Gaynor , Judy Huang
IPC分类号： C01B3702
CPC分类号： B01D71/028 , C01B37/02 , C01B39/02
摘要： The present invention relates to chemical modifications of the surfaces of silicalite and high-silica zeolite nanoparticles permitting such particles to be dispersed in nonpolar hydrophobic solvents, and to the dispersions so produced and to interlayer dielectric layers, molecular sieve membranes and/or catalytic membranes formed from such dispersions, and to the fabrication of integrated circuits in the case of interlayer dielectric layers. A dispersion of silicalite or high-silica zeolite nanoparticles is formed in alkaline aqueous solution. The pH of the solution is reduced by multiple rinsing with deionized water to approximately pH of 9 or 10. The solution is then rendered acidic, typically pH between 2 and 3, by the addition of a suitable acid. The acidic solution is gradually intermixed with an alcohol under conditions of elevated temperature and/or reduced pressure to enhance the solvent evaporation rate. In this form, the silicalite or high-silica zeolite nanoparticles are reacted with reactants to cause the silanol groups on the surface to form direct silicon-hydrocarbon bonds or, in alternative embodiments, to undergo etherification. The silicalite particles thus modified may be redispersed into nonpolar solvents suitable for combination with binding agents and for the formation of dielectric layers on integrated circuits.
摘要翻译：本发明涉及允许这种颗粒分散在非极性疏水性溶剂中的硅沸石和高硅石沸石纳米颗粒的表面的化学改性，以及如此制备的分散体和形成的层间介电层，分子筛膜和/或催化膜在这样的分散体中，并且在层间电介质层的情况下制造集成电路。在碱性水溶液中形成硅沸石或高硅沸石纳米颗粒的分散体。通过用去离子水多次冲洗至pH约为9或10，使溶液的pH降低。然后通过加入合适的酸将溶液呈酸性，通常为2至3。酸性溶液在升高的温度和/或减压条件下逐渐与醇混合以提高溶剂蒸发速率。在这种形式中，硅沸石或高硅石沸石纳米颗粒与反应物反应以使表面上的硅烷醇基团形成直接的硅 - 烃键，或者在替代实施方案中进行醚化。如此改性的硅沸石颗粒可以再分散到适用于与粘合剂组合的非极性溶剂中并在集成电路上形成电介质层。

8. 发明授权

US06329062B1 Dielectric layer including silicalite crystals and binder and method for producing same for microelectronic circuits 有权
标题翻译：介电层，包括硅质岩晶体和粘结剂及其制造方法，用于微电子电路
公开(公告)号：US06329062B1
公开(公告)日：2001-12-11
申请号：US09514966
申请日：2000-02-29
申请人： Justin F. Gaynor
发明人： Justin F. Gaynor
IPC分类号： B05D512
CPC分类号： H01L21/76813 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02304 , H01L21/02312 , H01L21/02337 , H01L21/02359 , H01L21/31695 , H01L21/7682 , H01L2221/1047 , Y10S977/888 , Y10S977/891 , Y10T428/31663
摘要： A two-component porous material including small silicalite crystals in a porous binder provides a low dielectric constant material useful as an insulating layer in microelectronic devices. The silicalite/binder porous material uses silicalite nanocrystals smaller than the characteristic dimensions of the features on the integrated circuit device. The binder is an amorphous porous material that links the silicalite nanocrystals together, formed from a precursor which polymerizes on heating. The silicalite nanocrystals are supplied as a colloidal suspension or slurry. The slurry and binder precursor are spincoated onto a substrate and thermally treated to polymerize the binder precursor and drive off solvent in the slurry, forming the porous silicalite/binder material. The silicalite/binder porous material is readily integrated into standard damascene fabrication processes.
摘要翻译：在多孔粘合剂中包括小硅沸石晶体的双组分多孔材料提供了用作微电子器件中的绝缘层的低介电常数材料。硅沸石/粘合剂多孔材料使用的硅沸石纳米晶体小于集成电路器件上特征的特征尺寸。粘合剂是将硅沸石纳米晶体连接在一起的无定形多孔材料，由在加热时聚合的前体形成。硅沸石纳米晶体作为胶态悬浮液或浆料提供。将浆料和粘合剂前体旋涂在基材上并进行热处理以聚合粘合剂前体并驱除浆料中的溶剂，形成多孔硅质岩/粘合剂材料。硅沸石/粘合剂多孔材料容易地集成到标准镶嵌制造工艺中。

9. 发明授权

US08034638B1 Treatment of low K films with a silylating agent for damage repair 有权
标题翻译：用甲硅烷基化剂处理低K膜用于损伤修复
公开(公告)号：US08034638B1
公开(公告)日：2011-10-11
申请号：US12437437
申请日：2009-05-07
申请人： Bart J. Schravendijk , Justin F. Gaynor
发明人： Bart J. Schravendijk , Justin F. Gaynor
IPC分类号： H01L21/00
CPC分类号： H01L21/31058 , H01L21/02126 , H01L21/02134 , H01L21/02137 , H01L21/02203 , H01L21/02274 , H01L21/3105 , H01L21/67155 , H01L21/67207 , H01L21/76808 , H01L21/76814 , H01L21/7682 , H01L21/76826
摘要： The present invention provides methods of repairing damage to low-k dielectric film that is incurred by commonly used processes in IC fabrication. The methods may be integrated into an IC fabrication process flow at various stages. According to various embodiments, the methods of involve performing an IC fabrication process on a wafer on which a low-k film is deposited, and subsequently treating the film with a silylating agent to repair the damage done to the film during the process. Damage repair may be performed after one or more of the damaging process steps.
摘要翻译：本发明提供了修复IC制造中通常使用的工艺引起的对低k电介质膜的损伤的方法。该方法可以集成到各个阶段的IC制造工艺流程中。根据各种实施例，涉及在沉积低k膜的晶片上执行IC制造工艺的方法，并且随后用甲硅烷基化剂处理该膜以修复在该过程期间对膜的损坏。可能在一个或多个破坏性处理步骤之后执行损伤修复。

10. 发明授权

US07541200B1 Treatment of low k films with a silylating agent for damage repair 有权
标题翻译：用甲硅烷基化剂处理低k膜用于损伤修复
公开(公告)号：US07541200B1
公开(公告)日：2009-06-02
申请号：US11476426
申请日：2006-06-27
申请人： Bart J. van Schravendijk , Justin F. Gaynor
发明人： Bart J. van Schravendijk , Justin F. Gaynor
IPC分类号： H01L21/00
CPC分类号： H01L21/31058 , H01L21/02126 , H01L21/02134 , H01L21/02137 , H01L21/02203 , H01L21/02274 , H01L21/3105 , H01L21/67155 , H01L21/67207 , H01L21/76808 , H01L21/76814 , H01L21/7682 , H01L21/76826
摘要： The present invention provides methods of repairing damage to low-k dielectric film that is incurred by commonly used processes in IC fabrication. The methods may be integrated into an IC fabrication process flow at various stages. According to various embodiments, the methods of involve performing an IC fabrication process on a wafer on which a low-k film is deposited, and subsequently treating the film with a silylating agent to repair the damage done to the film during the process. Damage repair may be performed after one or more of the damaging process steps.
摘要翻译：本发明提供了修复IC制造中通常使用的工艺引起的对低k电介质膜的损伤的方法。该方法可以集成到各个阶段的IC制造工艺流程中。根据各种实施例，涉及在沉积低k膜的晶片上执行IC制造工艺的方法，并且随后用甲硅烷基化剂处理该膜以修复在该过程期间对膜的损坏。可能在一个或多个破坏性处理步骤之后执行损伤修复。

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