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1. 发明申请

US20090096110A1 METHOD FOR MANUFACTURING A STACKED SEMICONDUCTOR PACKAGE, AND STACKED SEMICONDUCTOR PACKAGE 有权
标题翻译：堆叠半导体封装和堆叠半导体封装的制造方法
公开(公告)号：US20090096110A1
公开(公告)日：2009-04-16
申请号：US12249025
申请日：2008-10-10
申请人： Junya SAGARA , Shinya TAKYU , Tetsuya KUROSAWA
发明人： Junya SAGARA , Shinya TAKYU , Tetsuya KUROSAWA
IPC分类号： H01L23/52 , H01L21/00
CPC分类号： H01L25/0657 , H01L21/6835 , H01L24/24 , H01L24/82 , H01L2221/6834 , H01L2224/24051 , H01L2224/24145 , H01L2224/24226 , H01L2224/24998 , H01L2224/32145 , H01L2224/32225 , H01L2224/73267 , H01L2224/76155 , H01L2224/82001 , H01L2224/82007 , H01L2224/82102 , H01L2225/06524 , H01L2225/06562 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01082 , H01L2924/10157 , H01L2924/10253 , H01L2924/19041 , H01L2924/30105 , H01L2924/00
摘要： A method for manufacturing a stacked semiconductor package where a plurality of semiconductor chips are stacked on a substrate, including: forming insulating layers at portions of a wafer corresponding to sides of the plurality of semiconductor chips when the plurality of semiconductor chips are in the wafer; processing the wafer so as to obtain the plurality of semiconductor chips; subsequently stacking the plurality of semiconductor chips on the substrate such that the insulating layers formed at the sides of the plurality of semiconductor chips are respectively positioned at the same side as one another; and forming a wiring over the insulating layers formed at the sides of the plurality of semiconductor chips so that the plurality of semiconductor chips are electrically connected with one another and one or more of the plurality of semiconductor chips are electrically connected with the substrate.
摘要翻译：一种叠层半导体封装的制造方法，其中多个半导体芯片堆叠在基板上，包括：当所述多个半导体芯片在所述晶片中时，在与所述多个半导体芯片的侧面对应的晶片的部分处形成绝缘层; 处理晶片以获得多个半导体芯片; 随后将多个半导体芯片堆叠在基板上，使得形成在多个半导体芯片的侧面的绝缘层分别位于彼此相同的一侧; 以及在形成在所述多个半导体芯片的侧面的绝缘层上形成布线，使得所述多个半导体芯片彼此电连接，并且所述多个半导体芯片中的一个或多个与所述基板电连接。

2. 发明申请

US20120235282A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件制造方法和半导体器件
公开(公告)号：US20120235282A1
公开(公告)日：2012-09-20
申请号：US13372962
申请日：2012-02-14
申请人： Akira TOMONO , Tetsuya KUROSAWA , Tsutomu FUJITA , Mika KIRITANI , Shinya TAKYU
发明人： Akira TOMONO , Tetsuya KUROSAWA , Tsutomu FUJITA , Mika KIRITANI , Shinya TAKYU
IPC分类号： H01L21/78 , H01L23/00
CPC分类号： H01L23/3114 , H01L21/561 , H01L21/568 , H01L21/6836 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor device manufacturing method is disclosed. The method comprises (a) forming cut grooves in a front surface of a semiconductor wafer on which semiconductor elements are formed to partition the front surface into a plurality of regions, (b) disposing partly a resin in the cut grooves, (c) adhering a protection tape on the front surface of the semiconductor wafer, (d) thinning the semiconductor wafer by grinding a rear surface of the semiconductor wafer to reach the cut grooves, (e) forming an adhesive agent layer on the rear surface of the semiconductor wafer, and (f) dividing the semiconductor wafer into a plurality of semiconductor chips by cutting the adhesive agent layer together with the disposed resin along the cut grooves.
摘要翻译：根据一个实施例，公开了半导体器件制造方法。该方法包括：（a）在形成有半导体元件的半导体晶片的前表面上形成切割槽，以将前表面分隔成多个区域，（b）部分地将树脂放置在切割槽中，（c）粘附在半导体晶片的前表面上的保护带，（d）通过研磨半导体晶片的后表面到达切割槽来使半导体晶片变薄，（e）在半导体晶片的后表面上形成粘合剂层，和（f）通过沿着切割槽与所设置的树脂一起切割粘合剂层，将半导体晶片分成多个半导体芯片。

3. 发明申请

US20120187542A1 SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD AND MANUFACTURING APPARATUS OF THE SAME 有权
标题翻译：半导体器件及其制造方法及其制造方法
公开(公告)号：US20120187542A1
公开(公告)日：2012-07-26
申请号：US13353826
申请日：2012-01-19
申请人： Tetsuya KUROSAWA , Shinya Takyu , Akira Tomono
发明人： Tetsuya KUROSAWA , Shinya Takyu , Akira Tomono
IPC分类号： H01L29/30 , H01L21/78 , B32B37/06
CPC分类号： H01L21/78 , H01L21/6836
摘要： According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The method includes: (a) forming cutting grooves in an element formation surface of a semiconductor wafer on which semiconductor elements are formed; (b) applying a protection tape on the element formation surface of the semiconductor wafer; (c) grinding a rear surface of the semiconductor wafer to thin the semiconductor wafer and to divide the semiconductor wafer into a plurality of semiconductor chips on which the semiconductor elements are formed; (d) forming an adhesive layer on the rear surface of the semiconductor wafer; (e) separating and cutting the adhesive layer for each of the semiconductor chips; and (f) removing the protection tape. The (e) is performed by spraying a high-pressure air to the adhesive layer formed on the rear surface of the semiconductor wafer while melting or softening the adhesive layer by heating.
摘要翻译：根据一个实施例，公开了一种半导体器件的制造方法。该方法包括：（a）在形成有半导体元件的半导体晶片的元件形成表面中形成切割槽; （b）在半导体晶片的元件形成表面上施加保护带; （c）研磨半导体晶片的后表面以使半导体晶片变薄，并将半导体晶片分成多个形成有半导体元件的半导体芯片; （d）在半导体晶片的后表面上形成粘合剂层; （e）分离和切割每个半导体芯片的粘合剂层; 和（f）去除保护胶带。（e）通过在通过加热熔化或软化粘合剂层的同时向形成在半导体晶片的后表面上的粘合剂层喷射高压空气来进行。

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