会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Grooved gate transistor having source and drain diffused layers with
specified groove corner shape
    • 沟槽栅极晶体管,具有指定槽角形状的源极和漏极扩散层
    • US5408116A
    • 1995-04-18
    • US105330
    • 1993-08-09
    • Junko TanakaToru ToyabeShin'ichiro KimuraHiromasa NodaSigeo IharaKiyoo ItohYasushi Gotoh
    • Junko TanakaToru ToyabeShin'ichiro KimuraHiromasa NodaSigeo IharaKiyoo ItohYasushi Gotoh
    • H01L29/78B82B1/00H01L27/108H01L29/06H01L29/12H01L29/423
    • H01L29/125B82Y10/00H01L27/10808H01L29/78
    • A finely structured grooved gate transistor of which the threshold voltage does not decrease in spite of the small size and of which the threshold voltage of the transistor can be adjusted by shape. The shape of a groove corner of the transistor as a semiconductor device is contained in a concentric circle having a radius of curvature r.+-.L/5 (L: channel length) and the radius of curvature r, i.e., the geometric parameter has a relationship with the doping concentration as shown in FIG. 1B. Alternatively, the average (a+b)/2 (geometric parameter) of the sum of the two sides opposite the right angle of a right triangle formed of a straight line in contact with the gate bottom in parallel to the substrate surface of a grooved gate transistor, a perpendicular line to the substrate bottom surface from the source and drain ends at a portion formed with a channel and a straight line in contact with the groove corner has a relationship with the doping concentration as shown in FIG. 1B. The threshold voltage is not reduced even when the channel length is decreased by adjusting the groove shape and the doping concentration.
    • 尽管尺寸小,但是其晶体管的阈值电压可以通过形状来调整,其中阈值电压不降低的精细结构的开槽栅极晶体管。 作为半导体器件的晶体管的槽角的形状包含在具有曲率半径r +/- L / 5(L:沟道长度)和曲率半径r的同心圆中,即几何参数具有 与掺杂浓度的关系如图1所示。 1B。 或者,平行于沟槽的基板表面的与栅极底部接触的直线形成的直角三角形的直角相反的两侧的平均(a + b)/ 2(几何参数) 栅极晶体管,在形成有沟道的部分处的源极和漏极端部处的与衬底底表面的垂直线和与沟槽角接触的直线与图1所示的掺杂浓度具有关系。 1B。 即使通过调整沟槽形状和掺杂浓度来减小沟道长度,阈值电压也不会降低。