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1. 发明申请

US20060199288A1 Data processing apparatus for semiconductor processing apparatus 审中-公开
标题翻译：半导体处理装置的数据处理装置
公开(公告)号：US20060199288A1
公开(公告)日：2006-09-07
申请号：US11429199
申请日：2006-05-08
申请人： Junichi Tanaka , Toshio Masuda , Akira Kagoshima , Shoji Ikuhara , Hideyuki Yamamoto
发明人： Junichi Tanaka , Toshio Masuda , Akira Kagoshima , Shoji Ikuhara , Hideyuki Yamamoto
IPC分类号： H01L21/66
CPC分类号： H01L21/67276 , H01L22/20 , H01L22/34
摘要： A semiconductor processing method in which a sample wafer is disposed inside of a chamber for processing and process data is detected by using a generated plasma generated which includes data concerning emission light generated. Information data corresponding to the processing data is selectively sent to one of first and second data storing devices in accordance with a predetermined condition. The selective sending of the information data includes selectively sending the information data to one of the first and second data storing devices until an amount of the information data which has been sent to and stored in the one of the storing devices reaches a predetermined amount of processing of the sample wafer as the predetermined condition, and thereafter selectively sending the information data corresponding to a succeeding process to the other of the first and second data storing devices.
摘要翻译：通过使用包括关于所产生的发光的数据的产生的所生成的等离子体来检测其中样品晶片设置在用于处理和处理数据的室内的半导体处理方法。与处理数据相对应的信息数据根据预定条件选择性地发送到第一和第二数据存储装置之一。信息数据的选择性发送包括有选择地将信息数据发送到第一和第二数据存储装置中的一个，直到发送到存储装置中的一个的信息数据量达到预定量的处理的样品晶片作为预定条件，然后选择性地将对应于后续处理的信息数据发送到第一和第二数据存储装置中的另一个。

2. 发明授权

US07010374B2 Method for controlling semiconductor processing apparatus 有权
标题翻译：半导体处理装置的控制方法
公开(公告)号：US07010374B2
公开(公告)日：2006-03-07
申请号：US10377827
申请日：2003-03-04
申请人： Junichi Tanaka , Hideyuki Yamamoto , Shoji Ikuhara , Akira Kagoshima
发明人： Junichi Tanaka , Hideyuki Yamamoto , Shoji Ikuhara , Akira Kagoshima
IPC分类号： G06F19/00
CPC分类号： H01L21/67253 , H01L21/67028 , H01L21/67069 , Y10S438/905
摘要： A method for controlling a semiconductor processing apparatus including a vacuum processing chamber, a plasma apparatus for generating plasma inside the vacuum processing chamber, and a process controller for controlling a process by holding a process recipe including plasma cleaning of inside of the vacuum processing chamber constant, comprises the steps of detecting process abnormality of the process on the basis of sensor data detected by sensors arranged in the semiconductor processing apparatus, and executing a recovery step for removing deposition deposited inside the vacuum processing chamber when abnormality is detected.
摘要翻译：一种用于控制包括真空处理室的真空处理室，用于在真空处理室内产生等离子体的等离子体装置的半导体处理装置的方法，以及用于通过保持包括真空处理室内部的等离子体清洗常数的处理配方来控制处理的处理控制器包括以下步骤：根据布置在半导体处理装置中的传感器检测到的传感器数据来检测处理异常，并且当检测到异常时，执行用于去除沉积在真空处理室内的沉积物的恢复步骤。

3. 发明授权

US06881352B2 Disturbance-free, recipe-controlled plasma processing method 有权
标题翻译：无干扰，配方控制等离子体处理方法
公开(公告)号：US06881352B2
公开(公告)日：2005-04-19
申请号：US10350061
申请日：2003-01-24
申请人： Akira Kagoshima , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda , Hiroyuki Kitsunai , Junichi Tanaka , Natsuyo Morioka , Kenji Tamaki
发明人： Akira Kagoshima , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda , Hiroyuki Kitsunai , Junichi Tanaka , Natsuyo Morioka , Kenji Tamaki
IPC分类号： H05H1/00 , B01J19/08 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/66 , H01L21/00
CPC分类号： H01L22/20 , G05B19/41875 , G05B2219/45031 , H01J37/32935 , H01L22/26 , Y02P90/20 , Y02P90/22
摘要： A plasma processing control system and method which can suppress influences caused by disturbances. The control system includes a plasma processor for performing processing operation over a sample accommodated within a vacuum processing chamber, a sensor for monitoring process parameters during processing operation of the plasma processor, a processed-result estimation model for estimating a processed result on the basis of a monitored output of the sensor and a preset processed-result prediction equation, and an optimum recipe calculation model for calculating correction values of processing conditions on the basis of an estimated result of the processed-result estimation model in such a manner that the processed result becomes a target value. The plasma processor is controlled on the basis of a recipe generated by the optimum recipe calculation model.
摘要翻译：一种可以抑制由干扰引起的影响的等离子体处理控制系统和方法。控制系统包括：等离子体处理器，用于对容纳在真空处理室内的样品执行处理操作，用于在等离子体处理器的处理操作期间监视处理参数的传感器，用于基于等离子体处理器估计处理结果的处理结果估计模型传感器的监视输出和预设处理结果预测方程，以及用于基于处理结果估计模型的估计结果计算处理条件的校正值的最佳配方计算模型，使得处理结果成为目标值。基于由最佳配方计算模型生成的配方来控制等离子体处理器。

4. 发明授权

US07601240B2 Disturbance-free, recipe-controlled plasma processing system and method 有权
标题翻译：无干扰，配方控制等离子体处理系统和方法
公开(公告)号：US07601240B2
公开(公告)日：2009-10-13
申请号：US11346298
申请日：2006-02-03
申请人： Akira Kagoshima , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda , Hiroyuki Kitsunai , Junichi Tanaka , Natsuyo Morioka , Kenji Tamaki
发明人： Akira Kagoshima , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda , Hiroyuki Kitsunai , Junichi Tanaka , Natsuyo Morioka , Kenji Tamaki
IPC分类号： H01L21/00 , C23C16/00 , C23C14/00
CPC分类号： H01L22/20 , G05B19/41875 , G05B2219/45031 , H01J37/32935 , H01L22/26 , Y02P90/20 , Y02P90/22
摘要： A plasma processing system includes a first unit for plasma-processing a sample based on a recipe for plasma processing, and a second unit for modifying the recipe in accordance with a monitored value obtained during the plasma processing of the sample in the first unit. A next sample is plasma processed in the first unit based on the modified recipe.
摘要翻译：等离子体处理系统包括：基于等离子体处理的配方对样品进行等离子体处理的第一单元;以及用于根据在第一单元中的样品的等离子体处理期间获得的监视值修改配方的第二单元。基于改进的配方，下一个样品在第一单元中进行等离子体处理。

5. 发明申请

US20090120580A1 Disturbance-Free, Recipe-Controlled Plasma Processing System And Method 审中-公开
标题翻译：无干扰，配方控制的等离子体处理系统和方法
公开(公告)号：US20090120580A1
公开(公告)日：2009-05-14
申请号：US12351159
申请日：2009-01-09
申请人： Akira Kagoshima , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda , Hiroyuki Kitsunai , Junichi Tanaka , Natsuyo Morioka , Kenji Tamaki
发明人： Akira Kagoshima , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda , Hiroyuki Kitsunai , Junichi Tanaka , Natsuyo Morioka , Kenji Tamaki
IPC分类号： C23F1/08
CPC分类号： H01L22/20 , G05B19/41875 , G05B2219/45031 , H01J37/32935 , H01L22/26 , Y02P90/20 , Y02P90/22
摘要： A plasma processing apparatus includes a vacuum processing apparatus for performing a multi-step processing operation for a sample, a sensor for monitoring process parameters during at least a first step of the processing operation, a signal compression unit for compressing a signal from the sensor to generate an apparatus state signal, a worked result estimate model unit which estimates a processed result on the basis of the apparatus state signal and a set processed-result estimation equation, an optimum recipe calculation model unit which calculates corrections to processing conditions so that the processed result becomes a target value, a usable recipe selecting unit which judges validity of an optimum recipe. At a next step of the processing operation, sample processing is performed under optimum conditions on the basis of the usable recipe selected by the selected usable recipe.
摘要翻译：等离子体处理装置包括用于对样品进行多步骤处理操作的真空处理装置，用于在处理操作的至少第一步骤中监视处理参数的传感器，用于将来自传感器的信号压缩到生成装置状态信号，工作结果估计模型单元，其基于装置状态信号和设定的处理结果估计方程估计处理结果;最佳配方计算模型单元，其计算对处理条件的校正，使得处理结果成为目标值，判定最佳配方的有效性的可用配方选择单元。在处理操作的下一步骤中，基于由所选择的可用食谱选择的可用食谱，在最佳条件下进行样品处理。

6. 发明授权

US07343217B2 System for monitoring and controlling a semiconductor manufacturing apparatus using prediction model equation 有权
标题翻译：使用预测模型方程式监测和控制半导体制造装置的系统
公开(公告)号：US07343217B2
公开(公告)日：2008-03-11
申请号：US11439265
申请日：2006-05-24
申请人： Junichi Tanaka , Hiroyuki Kitsunai , Akira Kagoshima , Daisuke Shiraishi , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda
发明人： Junichi Tanaka , Hiroyuki Kitsunai , Akira Kagoshima , Daisuke Shiraishi , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda
IPC分类号： G06F19/00
CPC分类号： H01L22/20 , G05B13/048 , G05B19/41865 , G05B23/024 , G05B2219/31357 , G05B2219/32058 , H01L21/67276 , H01L2924/0002 , Y02P90/12 , Y02P90/14 , Y02P90/18 , Y02P90/20 , H01L2924/00
摘要： A semiconductor processing apparatus for processing a semiconductor wafer includes a plurality of sensors for monitoring a processing state, a processing result input unit, a model equation generation unit to generate a model equation for predicting a processing result, a processing result prediction unit which predicts a processing result, and a process recipe control unit. Further, a system is provided which comprises the model equation generation unit is provided at a remote location, and transmits the generated prediction model equation to the semiconductor processing apparatus through a network to control the processing condition of the semiconductor processing apparatus by the process recipe control unit.
摘要翻译：用于处理半导体晶片的半导体处理装置包括用于监视处理状态的多个传感器，处理结果输入单元，用于生成用于预测处理结果的模型方程式的模型方程生成单元，预测处理结果预测单元处理结果，以及处理配方控制单元。此外，提供了一种系统，其包括在远程位置处提供模型方程生成单元，并且通过网络将生成的预测模型方程发送到半导体处理装置，以通过处理配方控制来控制半导体处理装置的处理状态单元。

7. 发明申请

US20070193687A1 Disturbance-free, recipe-controlled plasma processing system and method 审中-公开
标题翻译：无干扰，配方控制等离子体处理系统和方法
公开(公告)号：US20070193687A1
公开(公告)日：2007-08-23
申请号：US11783653
申请日：2007-04-11
申请人： Akira Kagoshima , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda , Hiroyuki Kitsunai , Junichi Tanaka , Natsuyo Morioka , Kenji Tamaki
发明人： Akira Kagoshima , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda , Hiroyuki Kitsunai , Junichi Tanaka , Natsuyo Morioka , Kenji Tamaki
IPC分类号： H01L21/306
CPC分类号： H01L22/20 , G05B19/41875 , G05B2219/45031 , H01J37/32935 , H01L22/26 , Y02P90/20 , Y02P90/22
摘要： A plasma processing control system includes a plasma processing apparatus for generating plasma within a vacuum processing chamber and performing a processing operation over a sample accommodated within the vacuum processing chamber using radicals and ions within the plasma, a pre-measuring instrument which measures a shape of the sample before processing, a post-measuring instrument which measures a shape of the sample after the processing, a parameter changer provided with at least one optimum recipe model for calculating a target process parameter, and a model changer for modifying the optimum recipe model, thereby updating a recipe parameter for each etching.
摘要翻译：一种等离子体处理控制系统包括：等离子体处理装置，用于在真空处理室内产生等离子体，并使用等离子体内的自由基和离子对容纳在真空处理室内的样品进行处理操作;测量仪器，其测量形状处理前的样品，测量处理后的样品的形状的后测量仪器，设置有至少一个用于计算目标过程参数的最佳配方模型的参数改变器，以及用于修改最佳配方模型的模型变换器，从而更新每个蚀刻的配方参数。

8. 发明申请

US20050284574A1 Plasma processing apparatus and processing method 审中-公开
标题翻译：等离子体处理装置及处理方法
公开(公告)号：US20050284574A1
公开(公告)日：2005-12-29
申请号：US11217287
申请日：2005-09-02
申请人： Junichi Tanaka , Hiroyuki Kitsunai , Hideyuki Yamamoto , Shoji Ikuhara , Akira Kagoshima
发明人： Junichi Tanaka , Hiroyuki Kitsunai , Hideyuki Yamamoto , Shoji Ikuhara , Akira Kagoshima
IPC分类号： H01L21/3065 , C23F1/00 , H01L21/00 , H01L21/26 , H01L21/306
CPC分类号： H01L21/67103 , H01J37/32522 , H01L21/67248
摘要： A plasma processing apparatus includes a vacuum processing vessel constituting a vacuum processing chamber, a processing gas supply unit supplying a processing gas to the vacuum vessel, a plasma generator generating plasma by supplying electromagnetic energy to the vacuum vessel and dissociating the processing gas supplied thereto so as to process a wafer, and a processing chamber surface temperature control unit for controlling the inner surface temperature of the vacuum processing chamber. The control unit controls the inner surface temperature of the vacuum processing chamber based on more than one of (a) an idle time from the termination of an immediately previous lot processing, (b) a processing power of the immediately previous lot processing, (c) a process pressure of the immediately previous lot processing, and (d) a number of wafers being processed of the immediately previous lot processing prior to performing the present wafer processing.
摘要翻译：等离子体处理装置包括构成真空处理室的真空处理容器，向真空容器供给处理气体的处理气体供给单元，通过向真空容器供给电磁能并将供给的处理气体解离的等离子体发生器来产生等离子体以及用于控制真空处理室的内表面温度的处理室表面温度控制单元。控制单元基于以下（a）从紧接着的批次处理结束起的空闲时间，（b）紧接着的批次处理的处理能力（c），控制真空处理室的内表面温度）紧接在前的批次处理的处理压力，以及（d）在执行本晶片处理之前，正在处理之前的批次处理的多个晶片。

9. 发明授权

US06939435B1 Plasma processing apparatus and processing method 失效
标题翻译：等离子体处理装置及处理方法
公开(公告)号：US06939435B1
公开(公告)日：2005-09-06
申请号：US10875213
申请日：2004-06-25
申请人： Junichi Tanaka , Hiroyuki Kitsunai , Hideyuki Yamamoto , Shoji Ikuhara , Akira Kagoshima
发明人： Junichi Tanaka , Hiroyuki Kitsunai , Hideyuki Yamamoto , Shoji Ikuhara , Akira Kagoshima
IPC分类号： H01L21/3065 , C23F1/00 , H01L21/00 , H01L21/26 , H01L21/306
CPC分类号： H01L21/67103 , H01J37/32522 , H01L21/67248
摘要： The present invention provides a plasma processing apparatus and processing method capable of maintaining a constant processing profile. The plasma processing apparatus for providing a plasma processing to a wafer placed in a processing chamber comprises a processing vessel 1a constituting the processing chamber 1, process gas supply devices 3, 4 for supplying processing gas to the processing chamber 1, and a plasma generating means 2 for generating plasma by supplying electromagnetic energy to the processing chamber and dissociating the process gas supplied to the processing chamber, wherein the apparatus further comprises a processing chamber surface temperature control unit 15 for controlling the inner surface temperature of the processing chamber, the control unit controlling the temperature by heating the inner surface of the processing chamber by generating plasma in the chamber for a predetermined processing time based on a processing history after terminating a cleaning process and prior to performing the wafer processing.
摘要翻译：本发明提供一种能够保持恒定的处理轮廓的等离子体处理装置和处理方法。用于向放置在处理室中的晶片提供等离子体处理的等离子体处理装置包括构成处理室1的处理容器1 a，用于向处理室1供应处理气体的处理气体供应装置3,4以及等离子体产生用于通过向处理室供应电磁能并解离供给到处理室的处理气体来产生等离子体的装置2，其中该装置还包括处理室表面温度控制单元15，用于控制处理室的内表面温度，控制通过在终止清洁处理之后和在执行晶片处理之前基于处理历史在腔室中产生等离子体预定处理时间来加热处理室的内表面来控制温度的单元。

10. 发明申请

US20060129264A1 Method for controlling semiconductor processing apparatus 有权
标题翻译：半导体处理装置的控制方法
公开(公告)号：US20060129264A1
公开(公告)日：2006-06-15
申请号：US11339712
申请日：2006-01-26
申请人： Junichi Tanaka , Hideyuki Yamamoto , Shoji Ikuhara , Akira Kagoshima
发明人： Junichi Tanaka , Hideyuki Yamamoto , Shoji Ikuhara , Akira Kagoshima
IPC分类号： G06F19/00
CPC分类号： H01L21/67253 , H01L21/67028 , H01L21/67069 , Y10S438/905
摘要： Occurrence of a process abnormality in a semiconductor processing apparatus is obtained by obtaining an index of a processing size of each of wafers within an X-th lot, in which the X represents an integer, based on data obtained during processing of each of the wafers of the X-th lot, obtaining an index of a processing size of each of wafers within an X+1-th lot, based on data thereof and anticipating an index of a processing sizes of each of wafers within an X+2-th lot, based on the index obtained as to each of the wafers of the X-th lot and the X+1-th lot. A process abnormality occurring during the processing of a wafer of the X+2-th lot is anticipated when the anticipated index of the X+2-th lot exceeds an allowance range.
摘要翻译：基于在每个晶片的处理期间获得的数据，通过获得X代表整数的X批次内的每个晶片的处理尺寸的索引，获得半导体处理装置中的处理异常的发生的第X批次中，根据其数据获得X + 1批次内的每个晶片的处理尺寸的索引，并且预期第X + 2批中每个晶片的处理大小的指标基于对于X批次和X + 1批次的每个晶片获得的指数。当X + 2批次的预期指数超过允许范围时，预期在X + 2批次的晶片处理期间发生的处理异常。

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