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    • 8. 发明授权
    • Laser machining method and laser machining apparatus
    • 激光加工方法和激光加工设备
    • US07205501B2
    • 2007-04-17
    • US10927185
    • 2004-08-27
    • Kunio AraiKazuhisa IshiiHiroaki Ashizawa
    • Kunio AraiKazuhisa IshiiHiroaki Ashizawa
    • B23K26/38
    • H05K3/0038B23K26/04B23K26/0622B23K26/384B23K2101/42B23K2103/12
    • A laser machining method and a laser machining apparatus superior in hole position accuracy and hole quality. An outgoing beam outputted as short pulses is shaped by a pulse shaping unit so as to form a #1 branch beam. The #1 branch beam is supplied to a portion to be machined, so as to machine the portion. In this case, the #1 branch beam may be controlled to synchronize with the outgoing beam. When a piece to be machined is made from a metal material and at least one of an organic material and an inorganic material, the metal material is machined with a laser beam shaped to have a pulse width not shorter than 100 ns, and at least one of the organic material and the inorganic material is machined with a laser beam shaped to have a pulse width shorter than 100 ns.
    • 激光加工方法和激光加工装置,其孔位精度和孔质量优异。 作为短脉冲输出的输出光束通过脉冲整形单元成形,从而形成#1分支光束。 将#1分支光束供给到要加工的部分,以便加工该部分。 在这种情况下,可以控制#1分支光束与输出光束同步。 当要被加工的零件由金属材料和有机材料和无机材料中的至少一种制成时,金属材料被加工成具有不小于100ns的脉冲宽度的激光束,并且至少一个 的有机材料和无机材料用激光束加工成具有短于100ns的脉冲宽度。
    • 10. 发明申请
    • Film-formation method for semiconductor process
    • 半导体工艺的成膜方法
    • US20050136657A1
    • 2005-06-23
    • US11033406
    • 2005-01-12
    • Hiroaki YokoiTetsu ZenkoHiroaki AshizawaTsuyoshi Hashimoto
    • Hiroaki YokoiTetsu ZenkoHiroaki AshizawaTsuyoshi Hashimoto
    • C23C16/34C23C16/44H01L21/44
    • C23C16/34C23C16/4404
    • A film-formation method for a semiconductor process includes pre-coating of covering a worktable with a pre-coat before loading a target substrate into a process chamber, and film formation thereafter of loading the target substrate into the process chamber, and forming a main film on the target substrate. The pre-coating repeats the first and second steps a plurality of times, thereby laminating segment films to form the pre-coat. The first step supplies first and second process gases into the process chamber, thereby forming a segment film containing a metal element on the worktable. The second step supplies the second process gas containing no metal element into the process chamber, thereby exhausting and removing, from the process chamber, a byproduct produced in the first step other than a component forming the segment film.
    • 半导体工艺的成膜方法包括在将目标衬底加载到处理室中之前用预涂层覆盖工作台,以及之后将目标衬底装载到处理室中的膜形成,以及形成主体 目标底物上的胶片。 预涂层重复第一和第二步骤多次,从而层压段膜以形成预涂层。 第一步骤将第一和第二工艺气体供应到处理室中,从而在工作台上形成含有金属元素的分段薄膜。 第二步骤将不含金属元素的第二工艺气体供应到处理室中,从而从处理室排出除去除了形成段膜的部件之外的第一步骤中产生的副产物。