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1. 发明授权

US07311109B2 Method for cleaning a processing chamber and method for manufacturing a semiconductor device 有权
标题翻译：用于清洁处理室的方法和用于制造半导体器件的方法
公开(公告)号：US07311109B2
公开(公告)日：2007-12-25
申请号：US10606512
申请日：2003-06-26
申请人： Jung-wook Kim , Hyeon-Deok Lee , Jin-Gi Hong , Ji-Soon Park , Eung-Joon Lee
发明人： Jung-wook Kim , Hyeon-Deok Lee , Jin-Gi Hong , Ji-Soon Park , Eung-Joon Lee
IPC分类号： B08B9/00 , H01L21/00
CPC分类号： C23C16/4405 , C23C16/0245 , H01L21/02063 , H01L21/76814 , Y10S438/905
摘要： A method for cleaning a processing chamber and manufacturing a semiconductor device by removing impurities from a substrate in the processing chamber with a plasma of a first gas including hydrogen gas. After the substrate is removed from the processing chamber, the processing chamber is etched with the plasma of a non-hydrogenous second gas. Thus, the etching selectivity can be improved and the particles are prevented from depositing and/or forming on the substrate.
摘要翻译：一种清洗处理室的方法，并且利用包含氢气的第一气体的等离子体从处理室中的基板上除去杂质来制造半导体器件。在从处理室移除基板之后，用非氢气的第二气体的等离子体蚀刻处理室。因此，可以提高蚀刻选择性，并且防止颗粒在衬底上沉积和/或形成。

2. 发明申请

US20060128127A1 Method of depositing a metal compound layer and apparatus for depositing a metal compound layer 审中-公开
标题翻译：沉积金属化合物层的方法和沉积金属化合物层的装置
公开(公告)号：US20060128127A1
公开(公告)日：2006-06-15
申请号：US11290648
申请日：2005-12-01
申请人： Jung-Hun Seo , Young-Wook Park , Jin-Gi Hong , Kyung-Bum Koo , Eun-Taeck Lee
发明人： Jung-Hun Seo , Young-Wook Park , Jin-Gi Hong , Kyung-Bum Koo , Eun-Taeck Lee
IPC分类号： H01L21/20
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/45523 , C23C16/45561 , C23C16/45565 , C23C16/45574
摘要： In a method and an apparatus for depositing a metal compound layer, a first source gas and a second source gas may be provided onto a substrate to deposit a first metal compound layer on the substrate. The first source gas may include a metal and halogen elements, and the second source gas may include a first material capable of being reacted with the metal and a second material capable of being reacted with the halogen element. The first and the second source gases may be provided at a first flow rate ratio. A second metal compound layer may be deposited on the first metal compound layer by providing the first and the second source gases with a second flow rate ratio different from the first flow rate ratio. The apparatus may include a process chamber configured to receive a substrate, a gas supply system, and a flow rate control device.
摘要翻译：在用于沉积金属化合物层的方法和装置中，可以将第一源气体和第二源气体提供到衬底上以在衬底上沉积第一金属化合物层。第一源气体可以包括金属和卤素元素，并且第二源气体可以包括能够与金属反应的第一材料和能够与卤素元素反应的第二材料。第一和第二源气体可以以第一流量比提供。可以通过使第一和第二源气体具有与第一流量比不同的第二流量比，将第二金属化合物层沉积在第一金属化合物层上。该装置可以包括被配置为接收基板，气体供应系统和流量控制装置的处理室。

3. 发明授权

US06635586B2 Method of forming a spin-on-glass insulation layer 有权
标题翻译：形成旋涂玻璃绝缘层的方法
公开(公告)号：US06635586B2
公开(公告)日：2003-10-21
申请号：US09977673
申请日：2001-10-15
申请人： Ju-Seon Goo , Eun-Kee Hong , Hong-Gun Kim , Jin-Gi Hong
发明人： Ju-Seon Goo , Eun-Kee Hong , Hong-Gun Kim , Jin-Gi Hong
IPC分类号： H01L2469
CPC分类号： H01L21/02282 , H01L21/02123 , H01L21/02222 , H01L21/02337 , H01L21/316 , H01L21/76819 , H01L21/76828 , H01L21/76837
摘要： A method of forming a SOG insulation layer of a semiconductor device comprises forming the SOG insulation layer on a substrate having a stepped pattern by using a polysilazane in a solution state, performing a pre-bake process for removing solvent elements of the insulation layer at a temperature of 50 to 350° C., performing a hard bake process for restraining particles from forming at a temperature of 350 to 500° C., and annealing at a temperature of 600 to 1200° C. The method of the invention further includes planarizing the insulation layer between the hard bake process and the annealing step. Also, the hard bake process can be omitted.
摘要翻译：形成半导体器件的SOG绝缘层的方法包括：通过使用溶液状态的聚硅氮烷在具有阶梯状图案的基板上形成SOG绝缘层，进行用于除去绝缘层的溶剂元素的预烘烤工序温度为50〜350℃，进行用于抑制微粒在350〜500℃的温度下形成的硬烘烤工艺，在600〜1200℃的温度下进行退火。本发明的方法还包括平面化硬烘烤工艺与退火步骤之间的绝缘层。此外，可以省略硬烘焙处理。

4. 发明申请

US20060024964A1 Method and apparatus of forming thin film using atomic layer deposition 审中-公开
标题翻译：使用原子层沉积法形成薄膜的方法和装置
公开(公告)号：US20060024964A1
公开(公告)日：2006-02-02
申请号：US11154045
申请日：2005-06-15
申请人： Jung-Hun Seo , Young-Wook Park , Jin-Gi Hong
发明人： Jung-Hun Seo , Young-Wook Park , Jin-Gi Hong
IPC分类号： H01L21/44 , C23C16/00
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/452 , C23C16/45544
摘要： The method of forming a TiN thin film using an atomic layer deposition (ALD) method includes thermally decomposing TiCl4; introducing a pyrolyzed product of the TiCl4 into the chamber; supplying a first purge gas into the chamber; supplying a reactant gas into the chamber, thereby forming a TiN thin film; and supplying a second purge gas into the chamber. The apparatus of forming a TiN thin film includes a gas conduit having an entrance line into which a source gas, TiCl4 is introduced; a heater installed around the gas conduit and thermally decomposing the introduced source gas, TiCl4, in advance to make a secondary source gas; and a chamber being connected to the gas conduit and having a reaction room in which the TiN thin film is formed by the reaction of the secondary source gas and NH3 as a reactant gas. Therefore, a TiN thin film growth rate can be improved.
摘要翻译：使用原子层沉积（ALD）法形成TiN薄膜的方法包括：热分解TiCl 4; 将TiCl 4的热解产物引入室中; 将第一吹扫气体供应到所述室中; 将反应气体供应到室中，由此形成TiN薄膜; 以及将第二吹扫气体供应到所述室中。形成TiN薄膜的装置包括具有入口管的气体导管，引入源气体TiCl 4; 安装在气体管道周围的加热器，并预先将引入的源气体TiCl 4分解，以形成二次源气体; 以及与气体导管连接的室，具有反应室，在该反应室中，作为反应气体的二次气体和NH 3 3反应形成TiN薄膜。因此，可以提高TiN薄膜的生长速度。

5. 发明申请

US20060021578A1 Chemical vapor deposition apparatus 审中-公开
标题翻译：化学气相沉积装置
公开(公告)号：US20060021578A1
公开(公告)日：2006-02-02
申请号：US11155206
申请日：2005-06-16
申请人： Jung-Hun Seo , Young-Wook Park , Jin-Gi Hong
发明人： Jung-Hun Seo , Young-Wook Park , Jin-Gi Hong
IPC分类号： C23C16/00
CPC分类号： C23C16/4401 , H01L21/67109 , H01L21/67748
摘要： A chemical vapor deposition apparatus and method are provided. The apparatus includes a heater disposed on a bottom of a process chamber for heating a wafer laid on the heater. A shower head is disposed above the heater for injecting a reaction gas. The apparatus comprises a shutter chamber provided at an outer side of the process chamber. A transfer robot is installed in the shutter chamber having a blade at a front end thereof. The transfer robot is reciprocated within the process chamber by driving device. A shutter disk is laid on the blade of the transfer robot. The shutter disk is located on the heater of the process chamber by the transfer robot to prevent radiant heat generated from the heater from being transferred to the shower head.
摘要翻译：提供了一种化学气相沉积设备和方法。该设备包括设置在处理室底部的加热器的加热器的加热器。淋浴头设置在加热器上方，用于注入反应气体。该装置包括设置在处理室外侧的活门室。传送机器人安装在具有在其前端的叶片的快门室中。传送机器人通过驱动装置在处理室内往复运动。快门盘放置在传送机器人的刀片上。快门盘通过传送机器人位于处理室的加热器上，以防止加热器产生的辐射热被传送到淋浴喷头。

6. 发明授权

US08366827B2 Chamber inserts and apparatuses for processing a substrate 有权
标题翻译：腔体插入件和用于处理衬底的装置
公开(公告)号：US08366827B2
公开(公告)日：2013-02-05
申请号：US11447933
申请日：2006-06-07
申请人： Jung-Hun Seo , Jin-Gi Hong , Kyung-Bum Koo , Yun-Ho Choi , Eun-Taeck Lee , Hyun Chul Kwun
发明人： Jung-Hun Seo , Jin-Gi Hong , Kyung-Bum Koo , Yun-Ho Choi , Eun-Taeck Lee , Hyun Chul Kwun
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/68721 , C23C16/44 , C23C16/4408 , C23C16/45519 , C23C16/45591 , Y10T29/41
摘要： Disclosed are chamber inserts and apparatuses using the chamber inserts. A chamber insert may include a cylindrical body portion including a top end portion and a bottom end portion, a first protruding portion extending outwardly from a first portion of the cylindrical body portion, the first portion positioned circumferentially along the cylindrical body portion and a second protruding portion extending outwardly from a second portion of the cylindrical body portion, the second portion positioned circumferentially along less than all of the cylindrical body portion. In another example, the chamber insert may include a cylindrical body portion including a top end portion and a bottom end portion, the cylindrical body portion including a slit and at least one hole, the slit and the at least one hole positioned circumferentially along the cylindrical body portion and a first protruding portion extending outwardly from a first portion of the cylindrical body portion.
摘要翻译：公开了使用腔室插入件的腔室插入件和装置。腔室插入件可以包括包括顶端部分和底端部分的圆柱形主体部分，从圆柱形主体部分的第一部分向外延伸的第一突出部分，沿着圆柱形主体部分周向定位的第一部分和第二突出部分该部分从圆柱形主体部分的第二部分向外延伸，第二部分沿着比圆柱形主体部分的全部圆周方向定位。在另一示例中，腔室插入件可以包括包括顶端部分和底端部分的圆柱体部分，该圆柱形主体部分包括狭缝和至少一个孔，所述狭缝和至少一个孔沿着圆柱形主体部分和从圆柱形主体部分的第一部分向外延伸的第一突出部分。

7. 发明申请

US20080048274A1 Semiconductor device including a gate electrode of lower electrical resistance and method of manufacturing the same 审中-公开
标题翻译：包括具有较低电阻的栅电极的半导体器件及其制造方法
公开(公告)号：US20080048274A1
公开(公告)日：2008-02-28
申请号：US11878096
申请日：2007-07-20
申请人： Jung-Hun Seo , Hyun-Young Kim , Jin-Gi Hong
发明人： Jung-Hun Seo , Hyun-Young Kim , Jin-Gi Hong
IPC分类号： H01L29/78 , H01L21/4763
CPC分类号： H01L21/28061 , H01L29/4941
摘要： A semiconductor device may include a gate insulating layer on a semiconductor substrate, a polysilicon layer doped with impurities on the gate insulating layer, an interface reaction preventing layer on the polysilicon layer, a barrier layer on the interface reaction preventing layer, and a conductive metal layer on the barrier layer. The interface reaction preventing layer may reduce or prevent the occurrence of a chemical interfacial reaction with the barrier layer, and the barrier layer may reduce or prevent the diffusion of impurities doped to the polysilicon layer. The interface reaction preventing layer may include a metal-rich metal silicide having a metal mole fraction greater than a silicon mole fraction, so that the interface reaction preventing layer may reduce or prevent the dissociation of the barrier layer at higher temperatures. Thus, a barrier characteristic of a poly-metal gate electrode may be improved and surface agglomerations may be reduced or prevented.
摘要翻译：半导体器件可以包括在半导体衬底上的栅极绝缘层，在栅极绝缘层上掺杂有杂质的多晶硅层，多晶硅层上的界面反应防止层，界面反应防止层上的阻挡层和导电金属层在阻挡层上。界面反应防止层可以减少或防止与阻挡层的化学界面反应的发生，并且阻挡层可以减少或防止掺杂到多晶硅层的杂质的扩散。界面反应防止层可以包括具有大于硅摩尔分数的金属摩尔分数的富金属的金属硅化物，使得界面反应防止层可以降低或防止在较高温度下阻挡层的解离。因此，可以改善多金属栅电极的阻挡特性，并且可以减少或防止表面团聚。

8. 发明申请

US20070202694A1 Method of forming a layer and method of removing reaction by-products 失效
标题翻译：形成层的方法和除去反应副产物的方法
公开(公告)号：US20070202694A1
公开(公告)日：2007-08-30
申请号：US11589716
申请日：2006-10-31
申请人： Jung-Hun Seo , Jin-Gi Hong , Yun-Ho Choi , Hyun-Chul Kwun , Eun-Taeck Lee , Jin-Ho Kim
发明人： Jung-Hun Seo , Jin-Gi Hong , Yun-Ho Choi , Hyun-Chul Kwun , Eun-Taeck Lee , Jin-Ho Kim
IPC分类号： H01L21/44 , H01L21/465
CPC分类号： H01L21/76841 , C23C16/4405 , C23C16/45508 , H01L21/28556
摘要： In a method of forming a layer, a titanium layer and a titanium nitride layer may be successively formed on a first wafer. By-products adhered to the inside of a chamber during the formation of the titanium nitride layer may be removed from the chamber. Processes of forming the titanium layer, forming the titanium nitride layer, and removing the by-products may be repeated relative to a second wafer.
摘要翻译：在形成层的方法中，可以在第一晶片上连续地形成钛层和氮化钛层。在形成氮化钛层期间附着在室内部的副产物可以从室中除去。可以相对于第二晶片重复形成钛层，形成氮化钛层和除去副产物的工艺。

9. 发明授权

US07820244B2 Method of forming a layer and method of removing reaction by-products 失效
标题翻译：形成层的方法和除去反应副产物的方法
公开(公告)号：US07820244B2
公开(公告)日：2010-10-26
申请号：US11589716
申请日：2006-10-31
申请人： Jung-Hun Seo , Jin-Gi Hong , Yun-Ho Choi , Hyun-Chul Kwun , Eun-Taeck Lee , Jin-Ho Kim
发明人： Jung-Hun Seo , Jin-Gi Hong , Yun-Ho Choi , Hyun-Chul Kwun , Eun-Taeck Lee , Jin-Ho Kim
IPC分类号： C23C16/00
CPC分类号： H01L21/76841 , C23C16/4405 , C23C16/45508 , H01L21/28556
摘要： In a method of forming a layer, a titanium layer and a titanium nitride layer may be successively formed on a first wafer. By-products adhered to the inside of a chamber during the formation of the titanium nitride layer may be removed from the chamber. Processes of forming the titanium layer, forming the titanium nitride layer, and removing the by-products may be repeated relative to a second wafer.
摘要翻译：在形成层的方法中，可以在第一晶片上依次形成钛层和氮化钛层。在形成氮化钛层期间附着在室内部的副产物可以从室中除去。可以相对于第二晶片重复形成钛层，形成氮化钛层和除去副产物的工艺。

10. 发明授权

US07439192B2 Method of forming a layer on a semiconductor substrate 失效
标题翻译：在半导体衬底上形成层的方法
公开(公告)号：US07439192B2
公开(公告)日：2008-10-21
申请号：US11154110
申请日：2005-06-15
申请人： Jung-Hun Seo , Young-Wook Park , Jin-Gi Hong
发明人： Jung-Hun Seo , Young-Wook Park , Jin-Gi Hong
IPC分类号： H01L21/31
CPC分类号： C23C16/45544 , C23C16/34 , C23C16/45565 , C23C16/45589
摘要： In a method of forming a thin layer for a semiconductor device through an ALD process and a CVD process in the same chamber, a semiconductor substrate is introduced into a processing chamber, and an interval between a showerhead and the substrate is adjusted to a first gap distance. A first layer is formed on the substrate at a first temperature through an ALD process. The interval between the showerhead and the substrate is additionally adjuted to a second gap distance, and a second layer is formed on the first layer at a second temperature through a CVD process. Accordingly, the thin layer has good current characteristics, and the manufacturing throughput of a semiconductor device is improved.
摘要翻译：在通过同一腔室中的ALD工艺和CVD工艺形成用于半导体器件的薄层的方法中，将半导体衬底引入到处理室中，将喷头与衬底之间的间隔调整到第一间隙距离。通过ALD工艺在第一温度下在衬底上形成第一层。喷淋头和基板之间的间隔被额外地调整到第二间隙距离，并且通过CVD工艺在第二温度下在第一层上形成第二层。因此，薄层具有良好的电流特性，提高了半导体器件的制造能力。

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