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1. 发明授权

US08106394B2 Multi-layer storage node, resistive random access memory device including a multi-layer storage node and methods of manufacturing the same 有权
标题翻译：多层存储节点，包括多层存储节点的电阻随机存取存储器及其制造方法
公开(公告)号：US08106394B2
公开(公告)日：2012-01-31
申请号：US12314835
申请日：2008-12-17
申请人： Jung-hyun Lee , Sang-jun Choi , Hyung-jin Bae
发明人： Jung-hyun Lee , Sang-jun Choi , Hyung-jin Bae
IPC分类号： H01L29/68
CPC分类号： H01L45/146 , H01L27/2409 , H01L27/2436 , H01L45/085 , H01L45/1233 , H01L45/144 , H01L45/16
摘要： A multi-layer storage node, resistive random access memory device and methods of manufacturing the same are provided. The resistive random access memory device includes a switching structure and a storage node connected to the switching structure. The storage node includes a lower electrode, a first layer, a second layer, and an upper electrode that may be sequentially stacked. The first layer may be formed on the lower electrode and includes at least one of oxygen (O), sulfur (S), selenium (Se), tellurium (Te) and combinations thereof. The second layer may be formed on the first layer and includes at least one of copper (Cu), silver (Ag) and combinations thereof. The second layer may be formed of a material having an oxidizing power less than that of the first layer. The upper electrode may be formed on the second layer.
摘要翻译：提供了多层存储节点，电阻随机存取存储器件及其制造方法。电阻式随机存取存储器件包括连接到开关结构的开关结构和存储节点。存储节点包括可以顺序堆叠的下电极，第一层，第二层和上电极。第一层可以形成在下电极上，并且包括氧（O），硫（S），硒（Se），碲（Te）及其组合中的至少一种。第二层可以形成在第一层上，并且包括铜（Cu），银（Ag）及其组合中的至少一种。第二层可以由具有小于第一层的氧化能力的材料形成。上电极可以形成在第二层上。

2. 发明申请

US20080169118A1 Wire structure and semiconductor device comprising the the wire structure 有权
标题翻译：线结构和包括线结构的半导体器件
公开(公告)号：US20080169118A1
公开(公告)日：2008-07-17
申请号：US12005364
申请日：2007-12-27
申请人： Sang-jun Choi , Jung-hyun Lee , Hyung-jin Bae , Chang-soo Lee
发明人： Sang-jun Choi , Jung-hyun Lee , Hyung-jin Bae , Chang-soo Lee
IPC分类号： H01L27/108 , H01B5/00
CPC分类号： H01L27/101 , Y10S977/732 , Y10S977/762 , Y10S977/765 , Y10S977/94
摘要： Provided are a wire structure and a semiconductor device having the wire structure. The wire structure includes a first wire that has a first region having a width of several to tens of nanometers and a second region having a width wider than that of the first region.
摘要翻译：提供一种线结构和具有线结构的半导体器件。导线结构包括具有宽度为几至几十纳米的第一区域和宽度大于第一区域宽度的第二区域的第一布线。

3. 发明授权

US08362455B2 Storage node of a resistive random access memory device with a resistance change layer and method of manufacturing the same 有权
标题翻译：具有电阻变化层的电阻随机存取存储器件的存储节点及其制造方法
公开(公告)号：US08362455B2
公开(公告)日：2013-01-29
申请号：US12003136
申请日：2007-12-20
申请人： Sang-jun Choi , Jung-hyun Lee , Hyung-jin Bae , Chang-soo Lee
发明人： Sang-jun Choi , Jung-hyun Lee , Hyung-jin Bae , Chang-soo Lee
IPC分类号： H01L45/00
CPC分类号： H01L45/04 , H01L27/2436 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： Provided are a resistive random access memory device and a method of manufacturing the same. The resistive random access memory device includes a switching device and a storage node connected to the switching device, and the storage node includes a first electrode and a second electrode and a resistance change layer formed of Cu2-XO between the first electrode and the second electrode.
摘要翻译：提供一种电阻随机存取存储器件及其制造方法。电阻式随机存取存储器件包括开关器件和连接到开关器件的存储节点，并且存储节点包括第一电极和第二电极以及在第一电极和第二电极之间由Cu2-XO形成的电阻变化层。

4. 发明授权

US07932543B2 Wire structure and semiconductor device comprising the wire structure 有权
标题翻译：线结构和包括线结构的半导体器件
公开(公告)号：US07932543B2
公开(公告)日：2011-04-26
申请号：US12005364
申请日：2007-12-27
申请人： Sang-jun Choi , Jung-hyun Lee , Hyung-jin Bae , Chang-soo Lee
发明人： Sang-jun Choi , Jung-hyun Lee , Hyung-jin Bae , Chang-soo Lee
IPC分类号： H01L27/10
CPC分类号： H01L27/101 , Y10S977/732 , Y10S977/762 , Y10S977/765 , Y10S977/94
摘要： Provided are a wire structure and a semiconductor device having the wire structure. The wire structure includes a first wire that has a first region having a width of several to tens of nanometers and a second region having a width wider than that of the first region.
摘要翻译：提供一种线结构和具有线结构的半导体器件。导线结构包括具有宽度为几至几十纳米的第一区域和宽度大于第一区域宽度的第二区域的第一布线。

5. 发明授权

US07619915B2 Resistive random access memory device 有权
标题翻译：电阻随机存取存储器件
公开(公告)号：US07619915B2
公开(公告)日：2009-11-17
申请号：US11979894
申请日：2007-11-09
申请人： Jung-hyun Lee , Hyung-jin Bae , Sang-jun Choi
发明人： Jung-hyun Lee , Hyung-jin Bae , Sang-jun Choi
IPC分类号： H01L47/00
CPC分类号： H01L45/04 , H01L45/145
摘要： Provided is a resistive random access memory (RRAM) device having a switching device and a storage node connected to the switching device, the storage node including a first electrode formed of a metal compound, the metal compound including metal with no more than a divalence and a metal compound having anions, a solid electrolyte layer formed on the first electrode, and a second electrode formed on the solid electrolyte layer.
摘要翻译：提供一种电阻随机存取存储器（RRAM）装置，其具有与开关装置连接的开关装置和存储节点，所述存储节点包括由金属化合物形成的第一电极，所述金属化合物包括不超过二价的金属，具有阴离子的金属化合物，形成在第一电极上的固体电解质层和形成在固体电解质层上的第二电极。

6. 发明授权

US08507112B2 Data recording medium for data storage and method of recording or erasing data using the same 有权
标题翻译：用于数据存储的数据记录介质以及使用其记录或擦除数据的方法
公开(公告)号：US08507112B2
公开(公告)日：2013-08-13
申请号：US11984594
申请日：2007-11-20
申请人： Jung-hyun Lee , Sang-jun Choi , Hyung-jin Bae , Young-ju Kim
发明人： Jung-hyun Lee , Sang-jun Choi , Hyung-jin Bae , Young-ju Kim
IPC分类号： G11B5/02 , B32B7/02 , B32B15/04
CPC分类号： B82Y10/00 , G11B9/04 , G11B9/149 , Y10T428/12438 , Y10T428/12535
摘要： Provided is a data recording medium having improved data recording/storage characteristics and with an improved structure to have a higher data storage capacity, and a method of recording and/or easing data using the same. The data recording medium may include a Cu electrode layer on a substrate, and a data recording layer formed of a compound including a metal and at least one non-metal selected from the group consisting of S, Se, and Te, on the Cu electrode layer. Data is recordable to or erasable from the data recording layer by changing the resistance of the data recording layer by diffusing Cu ions from the Cu electrode layer to the data recording layer or by erasing Cu ions from the data recording layer by diffusing Cu ions from the data recording layer back to the Cu electrode layer, according to a voltage pulse applied to the data recording layer.
摘要翻译：提供了具有改进的数据记录/存储特性并且具有改进的结构以具有更高数据存储容量的数据记录介质，以及使用其记录和/或简化数据的方法。数据记录介质可以包括在基板上的Cu电极层，以及在Cu电极上由包含金属和选自S，Se和Te中的至少一种非金属的化合物形成的数据记录层层。通过将Cu离子从Cu电极层扩散到数据记录层，或者通过从Cu-Cu层中扩散Cu离子从数据记录层中去除Cu离子来改变数据记录层的电阻，数据可从数据记录层记录或擦除数据记录层根据施加到数据记录层的电压脉冲返回到Cu电极层。

7. 发明申请

US20080157055A1 Resistive random access memory device 有权
标题翻译：电阻随机存取存储器件
公开(公告)号：US20080157055A1
公开(公告)日：2008-07-03
申请号：US11979894
申请日：2007-11-09
申请人： Jung-hyun Lee , Hyung-jin Bae , Sang-jun Choi
发明人： Jung-hyun Lee , Hyung-jin Bae , Sang-jun Choi
IPC分类号： H01L47/00
CPC分类号： H01L45/04 , H01L45/145
摘要： Provided is a resistive random access memory (RRAM) device having a switching device and a storage node connected to the switching device, the storage node including a first electrode formed of a metal compound, the metal compound including metal with no more than a divalence and a metal compound having anions, a solid electrolyte layer formed on the first electrode, and a second electrode formed on the solid electrolyte layer.
摘要翻译：提供一种电阻随机存取存储器（RRAM）装置，其具有与开关装置连接的开关装置和存储节点，所述存储节点包括由金属化合物形成的第一电极，所述金属化合物包括不超过二价的金属，具有阴离子的金属化合物，形成在第一电极上的固体电解质层和形成在固体电解质层上的第二电极。

8. 发明申请

US20080094455A1 INKJET PRINTHEAD HEATER AND METHOD OF MANUFACTURE 审中-公开
标题翻译： INKJET PRINTHEAD加热器及其制造方法
公开(公告)号：US20080094455A1
公开(公告)日：2008-04-24
申请号：US11742756
申请日：2007-05-01
申请人： Jung-hyun LEE , Sang-jun Choi , Hyung-jin Bae , Chan-bong Jun
发明人： Jung-hyun LEE , Sang-jun Choi , Hyung-jin Bae , Chan-bong Jun
IPC分类号： B41J2/05 , G11B5/127
CPC分类号： B41J2/14129 , B41J2/1603 , B41J2/1642 , B41J2/1646 , B41J2202/03
摘要： An inkjet printhead heater including a plurality of unit heater layers each including a first nitride layer and a second nitride layer stacked on the first nitride layer, and an inkjet printhead including the heater, and a method of manufacturing an inkjet printhead heater including stacking a plurality of unit heater layers, each including a substrate having a first nitride layer and a second nitride layer stacked on the first nitride layer.
摘要翻译：一种喷墨打印头加热器，包括多个单元加热器层，每个单元加热器层包括堆叠在第一氮化物层上的第一氮化物层和第二氮化物层，以及包括该加热器的喷墨打印头，以及制造喷墨打印头加热器的方法，的每个单元加热器层，每个单元加热器层包括具有堆叠在第一氮化物层上的第一氮化物层和第二氮化物层的基板。

9. 发明申请

US20080002458A1 Nonvolatile variable resistance memory device and method of fabricating the same 有权
标题翻译：非易失性可变电阻存储器件及其制造方法
公开(公告)号：US20080002458A1
公开(公告)日：2008-01-03
申请号：US11799000
申请日：2007-05-18
申请人： Hyung-jin Bae , Jung-hyun Lee , Sang-jun Choi , Bum-seok Seo
发明人： Hyung-jin Bae , Jung-hyun Lee , Sang-jun Choi , Bum-seok Seo
IPC分类号： B32B9/04 , B05D1/36 , G11C11/00
CPC分类号： H01L27/101 , G11C13/00 , G11C13/0014 , G11C13/0016 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/142 , H01L45/146
摘要： A nonvolatile variable resistance memory device may include a lower electrode; a stacked structure including a first Cu compound layer disposed on the lower electrode, and a second Cu compound layer disposed on the first Cu compound layer; and an upper electrode disposed on the second Cu compound layer.
摘要翻译：非易失性可变电阻存储器件可以包括下电极; 包括设置在下电极上的第一Cu化合物层和设置在第一Cu化合物层上的第二Cu化合物层的堆叠结构; 以及设置在第二Cu化合物层上的上电极。

10. 发明申请

US20090194764A1 Multi-layer storage node, resistive random access memory device including a multi-layer storage node and methods of manufacturing the same 有权
标题翻译：多层存储节点，包括多层存储节点的电阻随机存取存储器及其制造方法
公开(公告)号：US20090194764A1
公开(公告)日：2009-08-06
申请号：US12314835
申请日：2008-12-17
申请人： Jung-hyun Lee , Sang-jun Choi , Hyung-jin Bae
发明人： Jung-hyun Lee , Sang-jun Choi , Hyung-jin Bae
IPC分类号： H01L29/68 , H01L21/06
CPC分类号： H01L45/146 , H01L27/2409 , H01L27/2436 , H01L45/085 , H01L45/1233 , H01L45/144 , H01L45/16
摘要： A multi-layer storage node, resistive random access memory device and methods of manufacturing the same are provided. The resistive random access memory device includes a switching structure and a storage node connected to the switching structure. The storage node includes a lower electrode, a first layer, a second layer, and an upper electrode that may be sequentially stacked. The first layer may be formed on the lower electrode and includes at least one of oxygen (O), sulfur (S), selenium (Se), tellurium (Te) and combinations thereof. The second layer may be formed on the first layer and includes at least one of copper (Cu), silver (Ag) and combinations thereof. The second layer may be formed of a material having an oxidizing power less than that of the first layer. The upper electrode may be formed on the second layer.
摘要翻译：提供了多层存储节点，电阻随机存取存储器件及其制造方法。电阻式随机存取存储器件包括连接到开关结构的开关结构和存储节点。存储节点包括可以顺序堆叠的下电极，第一层，第二层和上电极。第一层可以形成在下电极上，并且包括氧（O），硫（S），硒（Se），碲（Te）及其组合中的至少一种。第二层可以形成在第一层上，并且包括铜（Cu），银（Ag）及其组合中的至少一种。第二层可以由具有小于第一层的氧化能力的材料形成。上电极可以形成在第二层上。

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