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1. 发明授权

US08659069B2 Gate structures 有权
标题翻译：门结构
公开(公告)号：US08659069B2
公开(公告)日：2014-02-25
申请号：US13340968
申请日：2011-12-30
申请人： Jung-Hwan Kim , Sung-Ho Heo , Jae-Ho Choi , Hun-Hyeong Lim , Ki-Hyun Hwang , Woo-Sung Lee
发明人： Jung-Hwan Kim , Sung-Ho Heo , Jae-Ho Choi , Hun-Hyeong Lim , Ki-Hyun Hwang , Woo-Sung Lee
IPC分类号： H01L29/788
CPC分类号： H01L21/28273 , H01L27/11531
摘要： A method of forming a gate structure includes forming a tunnel insulation layer pattern on a substrate, forming a floating gate on the tunnel insulation layer pattern, forming a dielectric layer pattern on the floating gate, the dielectric layer pattern including a first oxide layer pattern, a nitride layer pattern on the first oxide layer pattern, and a second oxide layer pattern on the nitride layer pattern, the second oxide layer pattern being formed by performing an anisotropic plasma oxidation process on the nitride layer, such that a first portion of the second oxide layer pattern on a top surface of the floating gate has a larger thickness than a second portion of the second oxide layer pattern on a sidewall of the floating gate, and forming a control gate on the second oxide layer.
摘要翻译：形成栅极结构的方法包括在衬底上形成隧道绝缘层图案，在隧道绝缘层图案上形成浮栅，在浮栅上形成电介质层图案，电介质层图案包括第一氧化物层图案，所述第一氧化物层图案上的氮化物层图案和所述氮化物层图案上的第二氧化物层图案，所述第二氧化物层图案通过在所述氮化物层上进行各向异性等离子体氧化处理而形成，使得所述第二氧化物层图案的第二部分在浮置栅极的顶表面上的氧化物层图案具有比浮置栅极的侧壁上的第二氧化物层图案的第二部分更大的厚度，并且在第二氧化物层上形成控制栅极。

2. 发明申请

US20120187470A1 GATE STRUCTURES 有权
标题翻译：门结构
公开(公告)号：US20120187470A1
公开(公告)日：2012-07-26
申请号：US13340968
申请日：2011-12-30
申请人： Jung-Hwan KIM , Sung-Ho Heo , Jae-Ho Choi , Hun-Hyeong Lim , Ki-Hyun Hwang , Woo-Sung Lee
发明人： Jung-Hwan KIM , Sung-Ho Heo , Jae-Ho Choi , Hun-Hyeong Lim , Ki-Hyun Hwang , Woo-Sung Lee
IPC分类号： H01L29/788
CPC分类号： H01L21/28273 , H01L27/11531
摘要： A method of forming a gate structure includes forming a tunnel insulation layer pattern on a substrate, forming a floating gate on the tunnel insulation layer pattern, forming a dielectric layer pattern on the floating gate, the dielectric layer pattern including a first oxide layer pattern, a nitride layer pattern on the first oxide layer pattern, and a second oxide layer pattern on the nitride layer pattern, the second oxide layer pattern being formed by performing an anisotropic plasma oxidation process on the nitride layer, such that a first portion of the second oxide layer pattern on a top surface of the floating gate has a larger thickness than a second portion of the second oxide layer pattern on a sidewall of the floating gate, and forming a control gate on the second oxide layer.
摘要翻译：形成栅极结构的方法包括在衬底上形成隧道绝缘层图案，在隧道绝缘层图案上形成浮栅，在浮栅上形成电介质层图案，电介质层图案包括第一氧化层图案，所述第一氧化物层图案上的氮化物层图案和所述氮化物层图案上的第二氧化物层图案，所述第二氧化物层图案通过在所述氮化物层上进行各向异性等离子体氧化处理而形成，使得所述第二氧化物层图案的第二部分在浮置栅极的顶表面上的氧化物层图案具有比浮置栅极的侧壁上的第二氧化物层图案的第二部分更大的厚度，并且在第二氧化物层上形成控制栅极。

3. 发明授权

US09698233B2 Tunnel insulation layer structures, methods of manufacturing the same, and vertical memory devices including the same 有权
公开(公告)号：US09698233B2
公开(公告)日：2017-07-04
申请号：US14644408
申请日：2015-03-11
申请人： Eun-Yeoung Choi , Young-Jin Noh , Bi-O Kim , Kwang-Min Park , Jae-Young Ahn , Ju-Mi Yun , Jae-Ho Choi , Ki-Hyun Hwang
发明人： Eun-Yeoung Choi , Young-Jin Noh , Bi-O Kim , Kwang-Min Park , Jae-Young Ahn , Ju-Mi Yun , Jae-Ho Choi , Ki-Hyun Hwang
IPC分类号： H01L29/792 , H01L29/51 , H01L27/11582 , H01L21/28
CPC分类号： H01L29/513 , H01L21/28282 , H01L27/11582 , H01L29/518
摘要： Tunnel insulation layer structures and methods of manufacturing the same are disclosed. The tunnel insulation layer structures may include a first tunnel insulation layer, a second tunnel insulation layer, a third tunnel insulation layer, a fourth tunnel insulation layer and a fifth tunnel insulation layer. The first tunnel insulation layer on a substrate has a first band gap energy. The second tunnel insulation layer on the first tunnel insulation layer has a second band gap energy which is lower than the first band gap energy. The third tunnel insulation layer on the second tunnel insulation layer has a third band gap energy which is higher than the second band gap energy. The fourth tunnel insulation layer on the third tunnel insulation layer has a fourth band gap energy which is lower than the third band gap energy. The fifth tunnel insulation layer on the fourth tunnel insulation layer has a fifth band gap energy which is higher than the fourth band gap energy.

4. 发明授权

US09570621B2 Display substrate, method of manufacturing the same 有权
标题翻译：显示基板及其制造方法
公开(公告)号：US09570621B2
公开(公告)日：2017-02-14
申请号：US12977853
申请日：2010-12-23
申请人： Ki-Hun Jeong , Do-Hyun Kim , Dong-Hoon Lee , Kap-Soo Yoon , Jae-Ho Choi , Sung-Hoon Yang , Pil-Sang Yun , Seung-Mi Seo
发明人： Ki-Hun Jeong , Do-Hyun Kim , Dong-Hoon Lee , Kap-Soo Yoon , Jae-Ho Choi , Sung-Hoon Yang , Pil-Sang Yun , Seung-Mi Seo
IPC分类号： H01L29/10 , H01L29/12 , H01L29/786
CPC分类号： H01L29/7869 , H01L29/78606 , H01L29/78633
摘要： The present invention discloses a thin film transistor (TFT), a method for manufacturing the TFT, and a display substrate using the TFT that may prevent degradation of the characteristics of an oxide semiconductor contained in the TFT by blocking external light from entering a channel region of the oxide semiconductor. The TFT includes an oxide semiconductor layer; a protective layer overlapping a channel region of the oxide semiconductor layer; an opaque layer disposed between the oxide semiconductor layer and the protective layer; a source electrode contacting a first side of the oxide semiconductor layer; a drain electrode contacting a second side of the oxide semiconductor layer and facing the source electrode across the channel region; a gate electrode to apply an electric field to the oxide semiconductor layer; and a gate insulating layer disposed between the gate electrode and the oxide semiconductor layer.
摘要翻译：本发明公开了一种薄膜晶体管（TFT），TFT的制造方法以及使用该TFT的显示基板，其可以防止外部光阻挡进入沟道区域而使TFT中包含的氧化物半导体的特性劣化的氧化物半导体。 TFT包括氧化物半导体层; 与所述氧化物半导体层的沟道区域重叠的保护层; 设置在所述氧化物半导体层和所述保护层之间的不透明层; 与氧化物半导体层的第一面接触的源电极; 漏电极，与所述氧化物半导体层的第二侧接触，并跨过所述沟道区面对所述源电极; 用于向氧化物半导体层施加电场的栅电极; 以及设置在栅电极和氧化物半导体层之间的栅极绝缘层。

5. 发明授权

US08648985B2 Liquid crystal display device 有权
标题翻译：液晶显示装置
公开(公告)号：US08648985B2
公开(公告)日：2014-02-11
申请号：US12612620
申请日：2009-11-04
申请人： Yong-Hwan Kim , Jang-Soo Kim , Hong-Suk Yoo , Seung-Soo Baek , Hwa-Yeul Oh , Jae-Ho Choi , Jong-In Kim , Sang-Hee Jang
发明人： Yong-Hwan Kim , Jang-Soo Kim , Hong-Suk Yoo , Seung-Soo Baek , Hwa-Yeul Oh , Jae-Ho Choi , Jong-In Kim , Sang-Hee Jang
IPC分类号： G02F1/1343 , G02F1/1368
CPC分类号： G02F1/136209
摘要： The present invention relates to a liquid crystal display. The liquid crystal display has a lower panel including a first pixel area having a first pixel electrode and a first light leakage preventing member, a final pixel area having a second pixel electrode and a second light leakage preventing member, and middle pixel areas disposed between the first pixel area and the final pixel area, each of the middle pixel areas including a first middle pixel electrode and a second middle pixel electrode. Accordingly, light leakage may be effectively prevented at the first pixel area and the final pixel area that are disposed on the edge.
摘要翻译：本发明涉及一种液晶显示器。液晶显示器具有包括具有第一像素电极和第一防漏光部件的第一像素区域，具有第二像素电极和第二防漏光部件的最终像素区域的下面板，以及设置在第二像素区域之间的中间像素区域第一像素区域和最终像素区域，每个中间像素区域包括第一中间像素电极和第二中间像素电极。因此，可以有效地防止在设置在边缘上的第一像素区域和最终像素区域处的光泄漏。

6. 发明授权

US08384871B2 Liquid crystal display apparatus and method for manufacturing the same 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US08384871B2
公开(公告)日：2013-02-26
申请号：US12686012
申请日：2010-01-12
申请人： Seung-Hwan Shim , Gung-Rae Jo , Sung-Hoon Yang , Kap-Soo Yoon , Ki-Hun Jeong , Jae-Ho Choi
发明人： Seung-Hwan Shim , Gung-Rae Jo , Sung-Hoon Yang , Kap-Soo Yoon , Ki-Hun Jeong , Jae-Ho Choi
IPC分类号： G02F1/1333 , G02F1/1345 , G02F1/1339
CPC分类号： G02F1/1345 , G02F2001/133519
摘要： In a liquid crystal display (LCD) apparatus and a method for manufacturing the LCD apparatus, the LCD apparatus includes first and second substrates, and a liquid crystal layer disposed between the first and second substrates. The first substrate includes a transparent insulating substrate, a conductive layer formed over an entire surface of the transparent insulating substrate, and a transparent conductive electrode formed on the conductive layer.
摘要翻译：在液晶显示（LCD）装置和LCD装置的制造方法中，LCD装置包括第一和第二基板以及设置在第一和第二基板之间的液晶层。第一基板包括透明绝缘基板，形成在透明绝缘基板的整个表面上的导电层和形成在导电层上的透明导电电极。

7. 发明授权

US07847291B2 Display substrate 有权
标题翻译：显示基板
公开(公告)号：US07847291B2
公开(公告)日：2010-12-07
申请号：US12486328
申请日：2009-06-17
申请人： Kap-Soo Yoon , Sung-Hoon Yang , Sung-Ryul Kim , O-Sung Seo , Hwa-Yeul Oh , Jae-Ho Choi , Seong-Hun Kim , Yong-Mo Choi
发明人： Kap-Soo Yoon , Sung-Hoon Yang , Sung-Ryul Kim , O-Sung Seo , Hwa-Yeul Oh , Jae-Ho Choi , Seong-Hun Kim , Yong-Mo Choi
IPC分类号： H01L29/04
CPC分类号： H01L27/12 , H01L27/1225 , H01L29/7869
摘要： A display substrate includes; a substrate, a gate electrode arranged on the substrate, a semiconductor pattern arranged on the gate electrode, a source electrode arranged on the semiconductor pattern, a drain electrode arranged on the semiconductor pattern and spaced apart from the source electrode, an insulating layer arranged on, and substantially covering, the source electrode and the drain electrode to cover the source electrode and the drain electrode, a conductive layer pattern arranged on the insulating layer and overlapped aligned with the semiconductor pattern, a pixel electrode electrically connected to the drain electrode, and a storage electrode arranged on the substrate and overlapped overlapping with the pixel electrode, the storage electrode being electrically connected to the conductive layer pattern.
摘要翻译：显示基板包括：衬底，布置在衬底上的栅电极，布置在栅电极上的半导体图案，布置在半导体图案上的源电极，布置在半导体图案上并与源电极间隔开的漏电极，布置在并且基本上覆盖源电极和漏极以覆盖源电极和漏电极，布置在绝缘层上并与半导体图案重叠的导电层图案，与漏电极电连接的像素电极，以及存储电极，设置在所述基板上，与所述像素电极重叠地重叠，所述存储电极与所述导电层图案电连接。

8. 发明申请

US20100182554A1 LIQUID CRYSTAL DISPLAY APPARATUS AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US20100182554A1
公开(公告)日：2010-07-22
申请号：US12686012
申请日：2010-01-12
申请人： Seung-Hwan SHIM , Gug-Rae Jo , Sung-Hoon Yang , Kap-Soo Yoon , Ki-Hun Jeong , Jae-Ho Choi
发明人： Seung-Hwan SHIM , Gug-Rae Jo , Sung-Hoon Yang , Kap-Soo Yoon , Ki-Hun Jeong , Jae-Ho Choi
IPC分类号： G02F1/1333 , G02F1/13
CPC分类号： G02F1/1345 , G02F2001/133519
摘要： In a liquid crystal display (LCD) apparatus and a method for manufacturing the LCD apparatus, the LCD apparatus includes first and second substrates, and a liquid crystal layer disposed between the first and second substrates. The first substrate includes a transparent insulating substrate, a conductive layer formed over an entire surface of the transparent insulating substrate, and a transparent conductive electrode formed on the conductive layer.
摘要翻译：在液晶显示（LCD）装置和LCD装置的制造方法中，LCD装置包括第一和第二基板以及设置在第一和第二基板之间的液晶层。第一基板包括透明绝缘基板，形成在透明绝缘基板的整个表面上的导电层和形成在导电层上的透明导电电极。

9. 发明申请

US20090251656A1 DISPLAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：显示基板及其制造方法
公开(公告)号：US20090251656A1
公开(公告)日：2009-10-08
申请号：US12391541
申请日：2009-02-24
申请人： Bong-Kyu Shin , Seung-Jae Jung , Sang-Uk Lim , Sang-Woo Whangbo , Jae-Ho Choi , Hwa-Yeul Oh , Yong-Mo Choi
发明人： Bong-Kyu Shin , Seung-Jae Jung , Sang-Uk Lim , Sang-Woo Whangbo , Jae-Ho Choi , Hwa-Yeul Oh , Yong-Mo Choi
IPC分类号： G02F1/1333 , H05K3/00
CPC分类号： G02F1/133345 , G02F1/13454
摘要： A display substrate includes a soda-lime glass substrate, a barrier pattern, and first, second and third conductive patterns. The soda-lime glass substrate has a pixel area. The first conductive pattern includes a gate line formed on the soda-lime glass substrate and from a first conductive layer. The barrier pattern is formed between the first conductive pattern and the soda-lime glass substrate. The second conductive pattern includes a data line crossing the gate line. The data line is formed on the first conductive pattern and from a second conductive layer. The third conductive pattern includes a pixel electrode formed in the pixel area of the soda-lime glass substrate. The pixel electrode is formed on the second conductive pattern and from a third conductive layer.
摘要翻译：显示基板包括钠钙玻璃基板，阻挡图案以及第一，第二和第三导电图案。钠钙玻璃基板具有像素面积。第一导电图案包括形成在钠钙玻璃基板上和从第一导电层形成的栅极线。在第一导电图案和钠钙玻璃基板之间形成阻挡图案。第二导电图案包括与栅极线交叉的数据线。数据线形成在第一导电图案上和从第二导电层形成。第三导电图案包括形成在钠钙玻璃基板的像素区域中的像素电极。像素电极形成在第二导电图案上并由第三导电层形成。

10. 发明授权

US08675157B2 Thin-film transistor display panel and liquid crystal display including the same 有权
标题翻译：薄膜晶体管显示面板和液晶显示器包括相同的
公开(公告)号：US08675157B2
公开(公告)日：2014-03-18
申请号：US13200868
申请日：2011-10-04
申请人： Seong-Young Lee , Jae-Ho Choi , Joon-Chul Goh , Young-Soo Yoon
发明人： Seong-Young Lee , Jae-Ho Choi , Joon-Chul Goh , Young-Soo Yoon
IPC分类号： G02F1/1335 , G02F1/1337 , G02F1/1343
CPC分类号： G02F1/134336 , G02F1/133707 , G02F2001/134345 , H01L27/124 , H01L29/41733
摘要： Provided are a thin-film transistor (TFT) display panel in which grayscale inversion at sides of the TFT display panel is controlled to improve color at sides thereof due to the shifting of chromaticity coordinates, and a liquid crystal display (LCD) including the TFT display panel. The TFT display panel includes a first pixel electrode corresponding to a first pixel, a second pixel electrode corresponding to a second pixel, and a third pixel electrode corresponding to a third pixel, wherein each of the first through third pixel electrodes includes a first subpixel electrode and a second subpixel electrode which receive different data voltages from the data lines, and saw-toothed fine patterns are formed on oblique edges of the first subpixel electrode of the first pixel electrode.
摘要翻译：提供了一种薄膜晶体管（TFT）显示面板，其中TFT显示面板的侧面的灰度反转被控制以改善由于色度坐标的偏移而在其侧面的颜色，并且包括TFT的液晶显示器显示面板。 TFT显示面板包括对应于第一像素的第一像素电极，对应于第二像素的第二像素电极和对应于第三像素的第三像素电极，其中，第一至第三像素电极中的每一个包括第一子像素电极以及第二子像素电极，其从数据线接收不同的数据电压，并且在第一像素电极的第一子像素电极的倾斜边缘上形成锯齿形精细图案。

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