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    • 6. 发明授权
    • Backside illuminated image sensor and method of manufacturing the same
    • 背面照明图像传感器及其制造方法
    • US09034682B2
    • 2015-05-19
    • US13177253
    • 2011-07-06
    • Eun-Sub ShimJung-Chak AhnBum-Suk KimKyung-Ho Lee
    • Eun-Sub ShimJung-Chak AhnBum-Suk KimKyung-Ho Lee
    • H01L31/0232H01L27/146
    • H01L27/1464H01L27/14625H01L27/14685H01L27/14687
    • A method of manufacturing a backside illuminated image sensor, including forming a first isolation layer in a first semiconductor layer, such that the first isolation layer defines pixels of a pixel array in the first semiconductor layer, forming a second semiconductor layer on a first surface of the first semiconductor layer, forming a second isolation layer in the second semiconductor layer, such that the second isolation layer defines active device regions in the second semiconductor layer, forming photo detectors and circuit devices by implanting impurities into a first surface of the second semiconductor layer, the first surface of the second semiconductor layer facing away from the first semiconductor layer, forming a wiring layer on the first surface of the second semiconductor layer, and forming a light filter layer on a second surface of the first semiconductor layer.
    • 一种制造背面照射图像传感器的方法,包括在第一半导体层中形成第一隔离层,使得第一隔离层限定第一半导体层中的像素阵列的像素,在第一半导体层的第一表面上形成第二半导体层 所述第一半导体层在所述第二半导体层中形成第二隔离层,使得所述第二隔离层限定所述第二半导体层中的有源器件区域,通过将杂质注入到所述第二半导体层的第一表面中来形成光检测器和电路器件 所述第二半导体层的第一表面背离所述第一半导体层,在所述第二半导体层的所述第一表面上形成布线层,并且在所述第一半导体层的第二表面上形成滤光器层。
    • 8. 发明申请
    • BACKSIDE ILLUMINATED IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME
    • 背面照明图像传感器及其制造方法
    • US20120009720A1
    • 2012-01-12
    • US13177253
    • 2011-07-06
    • Eun-Sub SHIMJung-Chak AhnBum-Suk KimKyung-Ho Lee
    • Eun-Sub SHIMJung-Chak AhnBum-Suk KimKyung-Ho Lee
    • H01L31/0232
    • H01L27/1464H01L27/14625H01L27/14685H01L27/14687
    • A method of manufacturing a backside illuminated image sensor, including forming a first isolation layer in a first semiconductor layer, such that the first isolation layer defines pixels of a pixel array in the first semiconductor layer, forming a second semiconductor layer on a first surface of the first semiconductor layer, forming a second isolation layer in the second semiconductor layer, such that the second isolation layer defines active device regions in the second semiconductor layer, forming photo detectors and circuit devices by implanting impurities into a first surface of the second semiconductor layer, the first surface of the second semiconductor layer facing away from the first semiconductor layer, forming a wiring layer on the first surface of the second semiconductor layer, and forming a light filter layer on a second surface of the first semiconductor layer.
    • 一种制造背面照射图像传感器的方法,包括在第一半导体层中形成第一隔离层,使得第一隔离层限定第一半导体层中的像素阵列的像素,在第一半导体层的第一表面上形成第二半导体层 所述第一半导体层在所述第二半导体层中形成第二隔离层,使得所述第二隔离层限定所述第二半导体层中的有源器件区域,通过将杂质注入到所述第二半导体层的第一表面中来形成光检测器和电路器件 所述第二半导体层的第一表面背离所述第一半导体层,在所述第二半导体层的所述第一表面上形成布线层,并且在所述第一半导体层的第二表面上形成滤光器层。