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    • 6. 发明申请
    • UNIT PIXEL OF IMAGE SENSOR AND IMAGE SENSOR INCLUDING THE SAME
    • 图像传感器和图像传感器的单元像素包括它们
    • US20150228679A1
    • 2015-08-13
    • US14691739
    • 2015-04-21
    • Jung-Chak AHN
    • Jung-Chak AHN
    • H01L27/146
    • H01L27/14612H01L27/14614H01L27/14621H01L27/14627H01L27/14629H01L27/1463H01L27/1464H01L31/0232H01L31/09
    • A unit pixel of an image sensor includes a photoelectric conversion region, an isolation region, a floating diffusion region and a transfer gate. The photoelectric conversion region is formed in a semiconductor substrate. The isolation region surrounds the photoelectric conversion region, extends substantially vertically with respect to a first surface of the semiconductor substrate, and crosses the incident side of the photoelectric conversion region so as to block leakage light and diffusion carriers. The floating diffusion region is disposed in the semiconductor substrate above the photoelectric conversion region. The transfer gate is disposed adjacent to the photoelectric conversion region and the floating diffusion region, extends substantially vertically with respect to the first surface of the semiconductor substrate, and transmits the photo-charges from the photoelectric conversion region to the floating diffusion region.
    • 图像传感器的单位像素包括光电转换区域,隔离区域,浮动扩散区域和传输门极。 光电转换区域形成在半导体衬底中。 隔离区域围绕光电转换区域,相对于半导体衬底的第一表面基本垂直地延伸,并且与光电转换区域的入射侧交叉,以阻挡泄漏光和扩散载流子。 浮动扩散区域设置在光电转换区域上方的半导体衬底中。 传输门与光电转换区和浮动扩散区相邻设置,相对于半导体衬底的第一表面基本垂直地延伸,并将光电荷从光电转换区传输到浮动扩散区。