会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 7. 发明授权
    • Narrow width metal oxide semiconductor transistor
    • 窄宽度的金属氧化物半导体晶体管
    • US07906399B2
    • 2011-03-15
    • US12416042
    • 2009-03-31
    • Jung Ho Ahn
    • Jung Ho Ahn
    • H01L21/336
    • H01L29/41758H01L29/78
    • Disclosed is a semiconductor transistor for enhancing performance of PMOS and NMOS transistors, particularly current driving performance, while reducing a narrow width effect. A narrow width MOS transistor includes: a channel of which width is W0 and length is L0; an active area including source and drain areas formed at both sides with the channel as a center; a gate insulating layer formed on the channel; a gate conductor formed on the gate insulating layer and intersecting the active area; a first additional active area of width is larger than that W0 of the channel as an active area added to the source area; and a second additional active area of width is larger than that W0 of the channel as an active area added to the drain area. When the structure of the transistor having the additional active areas is applied to NMOS and PMOS transistors, a driving current is represented as 107.27% and 103.31%, respectively. Accordingly, the driving currents of both PMOS and NMOS transistors are enhanced.
    • 公开了一种用于增强PMOS和NMOS晶体管的性能的半导体晶体管,特别是电流驱动性能,同时减小窄宽度效应。 窄宽度的MOS晶体管包括:宽度为W0且长度为L0的沟道; 一个有效区域,包括以通道为中心形成在两侧的源区和漏区; 形成在所述通道上的栅极绝缘层; 栅极导体,形成在栅极绝缘层上并与有源区相交; 宽度的第一附加有效区域大于作为添加到源区域的活动区域的信道的W0; 并且宽度的第二附加有源区域大于作为添加到漏极区域的有源区域的沟道的W0。 当具有附加有源区的晶体管的结构被施加到NMOS和PMOS晶体管时,驱动电流分别表示为107.27%和103.31%。 因此,增加了PMOS和NMOS晶体管的驱动电流。