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1. 发明授权

US08360575B2 Eyeglasses and lens for same 有权
标题翻译：眼镜和镜片相同
公开(公告)号：US08360575B2
公开(公告)日：2013-01-29
申请号：US12965851
申请日：2010-12-11
申请人： Jun-Bo Feng , Qun-Qing Li , Shou-Shan Fan
发明人： Jun-Bo Feng , Qun-Qing Li , Shou-Shan Fan
IPC分类号： G02C7/10
CPC分类号： G02C7/12 , B82Y20/00 , B82Y30/00 , G02C7/108 , G02C2202/16
摘要： A lens for eyeglasses includes a substrate and at least one carbon nanotube (CNT) film including a number of CNTs. The substrate includes a surface, or defines at least one cavity. The at least one CNT film is disposed on the surface of the substrate, or embedded in the at least one cavity of the substrate such that a part of light is absorbed by the CNTs of the CNT film.
摘要翻译：用于眼镜的镜片包括基底和至少一个包含多个CNT的碳纳米管（CNT）膜。衬底包括表面，或限定至少一个空腔。所述至少一个CNT膜设置在所述基板的表面上，或者嵌入在所述基板的所述至少一个空腔中，使得一部分光被所述CNT膜的CNT吸收。

2. 发明授权

US09556018B2 Three-dimensional nano-structure array 有权
标题翻译：三维纳米结构阵列
公开(公告)号：US09556018B2
公开(公告)日：2017-01-31
申请号：US13340194
申请日：2011-12-29
申请人： Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Yuan-Hao Jin , Shou-Shan Fan
发明人： Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Yuan-Hao Jin , Shou-Shan Fan
IPC分类号： B32B3/30 , B81C1/00 , B82Y30/00
CPC分类号： B81C1/00111 , B82Y30/00 , Y10T428/24479 , Y10T428/2457
摘要： A three-dimensional nano-structure array includes a substrate and a number of three-dimensional nano-structures. Each three-dimensional nano-structure has a first peak and a second peak aligned side by side. A first groove is defined between the first peak and the second peak. A second groove is defined between the two adjacent three-dimensional nano-structures. A depth of the first groove is lower than that of the second groove.
摘要翻译：三维纳米结构阵列包括基底和多个三维纳米结构。每个三维纳米结构具有并排排列的第一峰和第二峰。在第一峰和第二峰之间限定第一凹槽。在两个相邻的三维纳米结构之间限定第二凹槽。第一槽的深度低于第二槽的深度。

3. 发明授权

US09099644B2 Phase change memory cell 有权
标题翻译：相变存储单元
公开(公告)号：US09099644B2
公开(公告)日：2015-08-04
申请号：US13332480
申请日：2011-12-21
申请人： Peng Liu , Qun-Qing Li , Kai-Li Jiang , Shou-Shan Fan
发明人： Peng Liu , Qun-Qing Li , Kai-Li Jiang , Shou-Shan Fan
IPC分类号： H01L29/02 , H01L45/00 , H01L27/24
CPC分类号： H01L45/1226 , H01L27/2463 , H01L45/06 , H01L45/12 , H01L45/1206 , H01L45/1286 , H01L45/144
摘要： A phase change memory cell includes a first circuit and a second circuit. The first circuit comprises a first electrode, a carbon nanotube layer and a second electrode electrically connected in series. The first circuit is adapted to write data into the phase change memory cell or reset the phase change memory cell. The second circuit comprises a third electrode, a phase change layer and a fourth electrode electrically connected in series, at least part of the phase change layer is overlapped with the carbon nanotube layer. The second circuit is adapted to read data from the phase change memory cell or reset the phase change memory cell.
摘要翻译：相变存储单元包括第一电路和第二电路。第一电路包括第一电极，碳纳米管层和串联电连接的第二电极。第一电路适于将数据写入相变存储单元或复位相变存储单元。第二电路包括第三电极，相变层和串联电连接的第四电极，至少部分相变层与碳纳米管层重叠。第二电路适于从相变存储单元读取数据或者复位相变存储单元。

4. 发明授权

US09012767B2 Solar cell system 有权
标题翻译：太阳能电池系统
公开(公告)号：US09012767B2
公开(公告)日：2015-04-21
申请号：US13572766
申请日：2012-08-13
申请人： Yuan-Hao Jin , Qun-Qing Li , Shou-Shan Fan
发明人： Yuan-Hao Jin , Qun-Qing Li , Shou-Shan Fan
IPC分类号： H01L31/00 , H01L31/068
CPC分类号： H01L31/068 , H01L31/022425 , H01L31/0687 , H01L31/1804 , Y02E10/544 , Y02E10/547 , Y02P70/521
摘要： A solar cell system includes a number of P-N junction cells, a number of inner electrodes, a first collecting electrode and a second collecting electrode. The number of the P-N junction cells is M. M is equal to or greater than 2. The M P-N junction cells are arranged from a first P-N junction cell to an Mth P-N junction cell along a straight line. The P-N junction cells are arranged in series along the straight line. The number of the inner electrodes is M−1. At least one inner electrode includes a carbon nanotube array. A first collecting electrode located on an outside surface of the first P-N junction cell. A second collecting electrode located on an outside surface of the Mth P-N junction cell. A photoreceptive surface is parallel to the straight line.
摘要翻译：太阳能电池系统包括多个P-N结电池，多个内电极，第一集电极和第二集电极。 P-N结电池的数量为M.M等于或大于2.M P-N结电池沿着直线从第一P-N结电池排列到第M个P-N结电池。 P-N结电池沿着直线串联排列。内部电极的数量为M-1。至少一个内部电极包括碳纳米管阵列。位于第一P-N结电池的外表面上的第一集电极。位于第M个P-N结电池的外表面上的第二集电极。感光面平行于直线。

5. 发明授权

US08895841B2 Carbon nanotube based silicon photovoltaic device 有权
标题翻译：碳纳米管基硅光电器件
公开(公告)号：US08895841B2
公开(公告)日：2014-11-25
申请号：US12339364
申请日：2008-12-19
申请人： Hai-Lin Sun , Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
发明人： Hai-Lin Sun , Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
IPC分类号： H01L31/00 , H01L31/0236 , H01L31/068 , H01L31/0224 , H01L31/18 , H01L31/0745
CPC分类号： H01L31/022466 , H01L31/0745 , H01L31/1884 , Y02E10/50 , Y10S977/742 , Y10S977/932 , Y10S977/948
摘要： A photovoltaic device includes a silicon substrate, an intrinsic layer, a carbon nanotube structure and a first electrode. The silicon substrate has a front surface and a rear surface. The intrinsic layer is disposed on the front surface of the silicon substrate. The carbon nanotube structure is disposed on the intrinsic layer. The first electrode is disposed on the rear surface of the silicon substrate.
摘要翻译：光电器件包括硅衬底，本征层，碳纳米管结构和第一电极。硅衬底具有前表面和后表面。本征层设置在硅衬底的前表面上。碳纳米管结构设置在本征层上。第一电极设置在硅衬底的后表面上。

6. 发明授权

US08795461B2 Method for stretching carbon nanotube film 有权
标题翻译：碳纳米管膜拉伸方法
公开(公告)号：US08795461B2
公开(公告)日：2014-08-05
申请号：US12583429
申请日：2009-08-20
申请人： Kai-Li Jiang , Chen Feng , Lin Xiao , Zhuo Chen , Liang Liu , Shou-Shan Fan , Qun-Qing Li , Li Qian , Kai Liu , Yang Wei
发明人： Kai-Li Jiang , Chen Feng , Lin Xiao , Zhuo Chen , Liang Liu , Shou-Shan Fan , Qun-Qing Li , Li Qian , Kai Liu , Yang Wei
IPC分类号： B29C65/00 , B65C9/06 , B28B11/08
CPC分类号： B29C55/04 , B29K2105/162 , D02J1/22
摘要： A method for stretching a carbon nanotube film includes providing one or more carbon nanotube films and one or more elastic supporters, attaching at least one portion of the one or more carbon nanotube films to the one or more elastic supporters, and stretching the elastic supporters.
摘要翻译：拉伸碳纳米管膜的方法包括提供一个或多个碳纳米管膜和一个或多个弹性支撑体，将一个或多个碳纳米管膜的至少一部分附着到一个或多个弹性支撑体上，并拉伸弹性支撑体。

7. 发明授权

US08790940B2 Method for making light emitting diode 有权
标题翻译：制造发光二极管的方法
公开(公告)号：US08790940B2
公开(公告)日：2014-07-29
申请号：US13479232
申请日：2012-05-23
申请人： Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Shou-Shan Fan
发明人： Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Shou-Shan Fan
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/0079 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L33/005 , H01L33/24
摘要： A method for making light emitting diode includes the following steps. A substrate is provided. A first semiconductor layer is grown on a surface of the substrate. A patterned mask layer is located on a surface of the first semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures, a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed first semiconductor layer is etched to form a protruding pair. A number of three-dimensional nano-structures are formed. An active layer and a second semiconductor layers are grown on the number of three-dimensional nano-structures in that order. The substrate is removed and a surface of the first semiconductor layer is exposed. A first electrode is applied to cover the exposed surface. A second electrode is electrically connected with the second semiconductor layer.
摘要翻译：制造发光二极管的方法包括以下步骤。提供基板。在衬底的表面上生长第一半导体层。图案化的掩模层位于第一半导体层的表面上，并且图案化掩模层包括多个棒状突出结构，在每个两个相邻的突出结构之间限定狭缝以暴露第一半导体层的一部分。暴露的第一半导体层被蚀刻以形成突出的一对。形成多个三维纳米结构。在三维纳米结构的数量上依次生长活性层和第二半导体层。去除衬底并暴露第一半导体层的表面。施加第一电极以覆盖暴露的表面。第二电极与第二半导体层电连接。

8. 发明授权

US08629424B2 Light emitting diode with three-dimensional nano-structures 有权
标题翻译：具有三维纳米结构的发光二极管
公开(公告)号：US08629424B2
公开(公告)日：2014-01-14
申请号：US13479227
申请日：2012-05-23
申请人： Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Shou-Shan Fan
发明人： Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Shou-Shan Fan
IPC分类号： H01L29/06
CPC分类号： H01L33/24 , H01L33/06 , H01L33/20 , H01L33/22
摘要： A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and the light emitting surface, and a cross section of each of the three-dimensional nano-structures is M-shaped.
摘要翻译：提供了包括基板，第一半导体层，有源层和第二半导体层的发光二极管。第一半导体层包括第一表面和第二表面，并且第一表面连接到基板。有源层和第二半导体层以该顺序堆叠在第二表面上，并且第二半导体层远离有源层的表面被配置为发光表面。第一电极与第一半导体层电连接。第二电极与第二半导体层电连接。多个三维纳米结构位于第一半导体层和发光面的第一表面的表面上，并且每个三维纳米结构的横截面为M形。

9. 发明授权

US08492682B2 Micro heater 有权
标题翻译：微加热器
公开(公告)号：US08492682B2
公开(公告)日：2013-07-23
申请号：US12981575
申请日：2010-12-30
申请人： Xue-Shen Wang , Qun-Qing Li , Shou-Shan Fan
发明人： Xue-Shen Wang , Qun-Qing Li , Shou-Shan Fan
IPC分类号： H05B3/10 , H01C3/14
CPC分类号： H05B3/145 , H05B2214/04
摘要： A micro heater includes a first electrode, a second electrode, a first carbon nanotube, and a second carbon nanotube. The first carbon nanotube extends from the first electrode. The second carbon nanotube branches from the second electrode. The first carbon nanotube and the second carbon nanotube intersect with each other to define a node therebetween.
摘要翻译：微加热器包括第一电极，第二电极，第一碳纳米管和第二碳纳米管。第一碳纳米管从第一电极延伸。第二碳纳米管从第二电极分支。第一碳纳米管和第二碳纳米管彼此交叉以在其间限定一个节点。

10. 发明授权

US08404503B1 Method for making light emitting diode 有权
标题翻译：制造发光二极管的方法
公开(公告)号：US08404503B1
公开(公告)日：2013-03-26
申请号：US13340658
申请日：2011-12-29
申请人： Zhen-Dong Zhu , Qun-Qing Li , Shou-Shan Fan
发明人： Zhen-Dong Zhu , Qun-Qing Li , Shou-Shan Fan
IPC分类号： H01L21/00
CPC分类号： B82Y20/00 , H01L33/22 , H01L33/38 , H01L33/405 , H01L33/44
摘要： A method for making light emitting diode is provided. The method includes following steps. A light emitting diode chip is provided, wherein the light emitting diode chip comprises a first semiconductor layer, an active layer and a second semiconductor layers stacked together in that order. A patterned mask layer is located on a surface of the first semiconductor layer, wherein the patterned mask layer includes a number of bar-shaped protruding structures aligned side by side, and a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed portion of the first semiconductor layer is etched to form a protruding pair. A number of M-shaped three-dimensional nano-structures are formed by removing the mask layer. A first electrode is electrically connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer.
摘要翻译：提供一种制造发光二极管的方法。该方法包括以下步骤。提供了一种发光二极管芯片，其中发光二极管芯片包括按顺序堆叠在一起的第一半导体层，有源层和第二半导体层。图案化的掩模层位于第一半导体层的表面上，其中图案化掩模层包括多个并排排列的条形突出结构，并且在每个两个相邻的突出结构之间限定狭缝以暴露部分第一半导体层。蚀刻第一半导体层的暴露部分以形成突出的一对。通过去除掩模层形成多个M形的三维纳米结构。第一电极与第一半导体层电连接。第二电极与第二半导体层电连接。

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