专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08952367B2 Thioxanthone compound and organic light emitting element having the same 有权
标题翻译：噻吨酮化合物和有机发光元件
公开(公告)号：US08952367B2
公开(公告)日：2015-02-10
申请号：US13881586
申请日：2011-10-31
申请人： Jun Kamatani , Masanori Seki , Takeshi Sekiguchi , Yosuke Nishide , Akihito Saitoh
发明人： Jun Kamatani , Masanori Seki , Takeshi Sekiguchi , Yosuke Nishide , Akihito Saitoh
IPC分类号： H01L51/00 , H01L51/40 , H01J1/63 , C08F2/46 , C07D335/16 , C07D409/04 , C07D409/10 , C07D409/14 , C09K11/06 , H05B33/10 , H01L51/50
CPC分类号： H01L51/0074 , C07D335/16 , C07D409/04 , C07D409/10 , C07D409/14 , C09K11/06 , C09K2211/1007 , C09K2211/1011 , C09K2211/1088 , C09K2211/1092 , H01L51/0058 , H01L51/0071 , H01L51/5016 , H01L51/5072 , H01L51/5096 , H05B33/10
摘要： Provided is an organic light emitting element having a high light emission efficiency and a low drive voltage. In the organic light emitting element including a positive electrode, a negative electrode and an organic compound layer disposed between the positive electrode and the negative electrode, the organic compound layer includes a thioxanthone compound represented by the following general formula [1].
摘要翻译：提供了一种具有高发光效率和低驱动电压的有机发光元件。在具有正极，负极和设置在正极和负极之间的有机化合物层的有机发光元件中，有机化合物层包括由以下通式[1]表示的噻吨酮化合物。

2. 发明申请

US20130221340A1 THIOXANTHONE COMPOUND AND ORGANIC LIGHT EMITTING ELEMENT HAVING THE SAME 有权
标题翻译：硫酮化合物和有机发光元件
公开(公告)号：US20130221340A1
公开(公告)日：2013-08-29
申请号：US13881586
申请日：2011-10-31
申请人： Jun Kamatani , Masanori Seki , Takeshi Sekiguchi , Yosuke Nishide , Akihito Saitoh
发明人： Jun Kamatani , Masanori Seki , Takeshi Sekiguchi , Yosuke Nishide , Akihito Saitoh
IPC分类号： H01L51/00
CPC分类号： H01L51/0074 , C07D335/16 , C07D409/04 , C07D409/10 , C07D409/14 , C09K11/06 , C09K2211/1007 , C09K2211/1011 , C09K2211/1088 , C09K2211/1092 , H01L51/0058 , H01L51/0071 , H01L51/5016 , H01L51/5072 , H01L51/5096 , H05B33/10
摘要： Provided is an organic light emitting element having a high light emission efficiency and a low drive voltage. In the organic light emitting element including a positive electrode, a negative electrode and an organic compound layer disposed between the positive electrode and the negative electrode, the organic compound layer includes a thioxanthone compound represented by the following general formula [1].
摘要翻译：提供了一种具有高发光效率和低驱动电压的有机发光元件。在具有正极，负极和设置在正极和负极之间的有机化合物层的有机发光元件中，有机化合物层包括由以下通式[1]表示的噻吨酮化合物。

3. 发明申请

US20110204354A1 INDENOPYRENE COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE USING THE COMPOUND 有权
标题翻译：使用该化合物的茚二酮化合物和有机发光装置
公开(公告)号：US20110204354A1
公开(公告)日：2011-08-25
申请号：US13127637
申请日：2009-11-06
申请人： Takeshi Sekiguchi , Hiroshi Tanabe , Hiroki Ohrui , Masanori Seki
发明人： Takeshi Sekiguchi , Hiroshi Tanabe , Hiroki Ohrui , Masanori Seki
IPC分类号： H01L51/54 , C07C25/22 , C07C211/61 , C07D215/06 , C07D213/16 , C07D401/04 , C07D239/26 , C07D221/18 , C07D471/04 , C07C13/62
CPC分类号： C07C25/22 , C07C13/62 , C07C211/61 , C07C2603/18 , C07C2603/24 , C07C2603/26 , C07C2603/40 , C07C2603/48 , C07C2603/50 , C07C2603/52 , C07C2603/54 , C07D213/06 , C07D215/06 , C07D221/18 , C07D239/26 , C07D401/04 , C07D471/04 , C09K11/06 , C09K2211/1007 , C09K2211/1011 , C09K2211/1014 , C09K2211/1029 , C09K2211/1044 , H01L51/0054 , H01L51/0058 , H01L51/0059 , H01L51/5012 , H01L51/5048 , H01L51/5092 , H05B33/10
摘要： Provided is an organic light-emitting device having an optical output with high luminance and high color purity with extremely high efficiency. The organic light-emitting device includes an organic layer between the anode and the cathode, in which one of the anode and the cathode is a transparent electrode or a semi-transparent electrode and at least one layer of the organic layer contains at least one kind of indenopyrene compound having a specific structure.
摘要翻译：本发明提供一种具有高亮度，高纯度，高效率的光输出的有机发光装置。有机发光器件包括在阳极和阴极之间的有机层，其中阳极和阴极中的一个是透明电极或半透明电极，并且至少一层有机层包含至少一种具有特定结构的茚并芘化合物。

4. 发明授权

US08628863B2 Indenopyrene compound and organic light-emitting device using the compound 有权
标题翻译：茚并芘化合物和使用该化合物的有机发光装置
公开(公告)号：US08628863B2
公开(公告)日：2014-01-14
申请号：US13127637
申请日：2009-11-06
申请人： Takeshi Sekiguchi , Hiroshi Tanabe , Hiroki Ohrui , Masanori Seki
发明人： Takeshi Sekiguchi , Hiroshi Tanabe , Hiroki Ohrui , Masanori Seki
IPC分类号： H01L51/54 , C07C25/22 , C07C13/62 , C07C211/61 , C07D213/16 , C07D215/06 , C07D221/18 , C07D239/26 , C07D401/04 , C07D471/04
CPC分类号： C07C25/22 , C07C13/62 , C07C211/61 , C07C2603/18 , C07C2603/24 , C07C2603/26 , C07C2603/40 , C07C2603/48 , C07C2603/50 , C07C2603/52 , C07C2603/54 , C07D213/06 , C07D215/06 , C07D221/18 , C07D239/26 , C07D401/04 , C07D471/04 , C09K11/06 , C09K2211/1007 , C09K2211/1011 , C09K2211/1014 , C09K2211/1029 , C09K2211/1044 , H01L51/0054 , H01L51/0058 , H01L51/0059 , H01L51/5012 , H01L51/5048 , H01L51/5092 , H05B33/10
摘要： Provided is an organic light-emitting device having an optical output with high luminance and high color purity with extremely high efficiency. The organic light-emitting device includes an organic layer between the anode and the cathode, in which one of the anode and the cathode is a transparent electrode or a semi-transparent electrode and at least one layer of the organic layer contains at least one kind of indenopyrene compound having a specific structure.
摘要翻译：本发明提供一种具有高亮度，高纯度，高效率的光输出的有机发光装置。有机发光器件包括在阳极和阴极之间的有机层，其中阳极和阴极中的一个是透明电极或半透明电极，并且至少一层有机层包含至少一种具有特定结构的茚并芘化合物。

5. 发明申请

US20130299811A1 DIBENZOTHIOPHENE DIOXIDE COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE USING THE SAME 审中-公开
标题翻译：二苯并噻吩二氧化物和有机发光装置
公开(公告)号：US20130299811A1
公开(公告)日：2013-11-14
申请号：US13981295
申请日：2011-12-09
申请人： Masanori Seki , Kenichi Ikari
发明人： Masanori Seki , Kenichi Ikari
IPC分类号： H01L51/52
CPC分类号： H01L51/52 , C07D333/76 , H01L51/0054 , H01L51/006 , H01L51/0072 , H01L51/0074 , H01L51/0085 , H01L51/5016
摘要： The present invention provides an organic light-emitting device showing characteristics of high efficiency and long operating life. The organic light-emitting device includes an anode, a cathode, and an organic compound layer disposed between the anode and the cathode. The organic compound layer includes at least a light-emitting layer that contains a dibenzothiophene dioxide compound shown in claim 1.
摘要翻译：本发明提供一种显示高效率和长使用寿命特性的有机发光装置。有机发光器件包括阳极，阴极和设置在阳极和阴极之间的有机化合物层。有机化合物层至少包含含有权利要求1所述的二苯并噻吩二氧化物的发光层。

6. 发明授权

US07960393B2 Pyrimidine derivatives useful for the treatment of diseases mediated by CRTH2 有权
标题翻译：可用于治疗由CRTH2介导的疾病的嘧啶衍生物
公开(公告)号：US07960393B2
公开(公告)日：2011-06-14
申请号：US12868663
申请日：2010-08-25
申请人： Tai-wei Ly , Yuji Koriyama , Takashi Yoshino , Hiroki Sato , Kazuho Tanaka , Hiromi Sugimoto , Yoshihisa Manabe , Kevin Bacon , Klaus Urbahns , Masanori Seki , Takuya Shintani
发明人： Tai-wei Ly , Yuji Koriyama , Takashi Yoshino , Hiroki Sato , Kazuho Tanaka , Hiromi Sugimoto , Yoshihisa Manabe , Kevin Bacon , Klaus Urbahns , Masanori Seki , Takuya Shintani
IPC分类号： A61K31/505 , A61K31/506 , A61P11/06 , C07D239/34 , C07D239/42 , C07D239/48 , C07D401/12 , C07D403/12 , C07D403/14 , C07D405/12 , C07D407/12
CPC分类号： C07D239/42 , C07D239/30 , C07D401/12 , C07D403/04 , C07D403/12 , C07D405/12
摘要： The present invention relates to a pyrimidine derivative of the formula (I) and salts thereof which is useful as an active ingredient of pharmaceutical preparations. The pyrimidine derivative of the present invention has excellent CRTH2 (G-protein-coupled chemoattractant receptor, expressed on Th2 cells) antagonistic activity and can be used for the prophylaxis and treatment of diseases associated with CRTH2 activity, in particular for the treatment of allergic diseases, such as asthma, allergic rhinitis, atopic dermatitis, and allergic conjunctivitis; eosinophil-related diseases, such as Churg-Strauss syndrome and sinusitis; basophil-related diseases, such as basophilic leukemia, chronic urticaria and basophilic leukocytosis in human and other mammals; and inflammatory diseases characterized by T lymphocytes and profuse leukocyte infiltrates such as psoriasis, eczema, inflammatory bowel disease, ulcerative colitis, Crohn's disease, COPD (chronic obstructive pulmonary disorder) and arthritis.
摘要翻译：本发明涉及式（I）的嘧啶衍生物及其盐，其可用作药物制剂的活性成分。本发明的嘧啶衍生物具有优异的CRTH2（G蛋白偶联化学引诱物受体，在Th2细胞上表达）拮抗活性，可用于预防和治疗与CRTH2活性相关的疾病，特别是用于治疗过敏性疾病，如哮喘，过敏性鼻炎，特应性皮炎和过敏性结膜炎; 嗜酸性粒细胞相关疾病，如中华综合征和鼻窦炎; 嗜碱性粒细胞相关疾病，如嗜碱性白血病，慢性荨麻疹和人类和其他哺乳动物的嗜碱性白细胞增多症; 以T淋巴细胞为特征的炎性疾病和白血球浸润如银屑病，湿疹，炎性肠病，溃疡性结肠炎，克罗恩病，COPD（慢性阻塞性肺病）和关节炎等。

7. 发明申请

US20050272185A1 Method of fabricating a semiconductor thin film and semiconductor thin film fabrication apparatus 审中-公开
标题翻译：制造半导体薄膜的方法和半导体薄膜制造装置
公开(公告)号：US20050272185A1
公开(公告)日：2005-12-08
申请号：US11147641
申请日：2005-06-07
申请人： Masanori Seki , Yoshihiro Taniguchi , Tetsuya Inui
发明人： Masanori Seki , Yoshihiro Taniguchi , Tetsuya Inui
IPC分类号： H01L21/20 , C30B1/00 , C30B13/24 , C30B29/06 , H01L21/00 , H01L21/77 , H01L21/84 , H01L29/786
CPC分类号： H01L21/02675 , C30B13/24 , C30B29/06 , H01L21/2026 , H01L27/1214 , H01L29/78672 , Y10T117/10
摘要： A fabrication method of a semiconductor thin film including a polycrystalline semiconductor region by irradiating a precursor semiconductor thin film with at least two types of laser beams, and melting-recrystallizing the precursor semiconductor thin film, wherein the precursor semiconductor thin film is irradiated with a predetermined reference laser beam, and a radiation initiation time or power density of a laser beam is controlled according to change in reflectance of the site irradiated with the reference laser beam. A semiconductor thin film fabrication apparatus used in the fabrication method of present invention, wherein includes at least two light sources, a sensing unit, and a control unit. The crystals formed have no difference in the length of crystal caused by variation in the energy of each radiation.
摘要翻译：一种包含多晶半导体区域的半导体薄膜的制造方法，其通过用至少两种类型的激光束照射前体半导体薄膜，并对前体半导体薄膜进行熔融再结晶，其中前体半导体薄膜用预定的参考激光束，并且根据用参考激光束照射的部位的反射率的变化来控制激光束的发射时间或功率密度。一种在本发明的制造方法中使用的半导体薄膜制造装置，其包括至少两个光源，感测单元和控制单元。形成的晶体由于每个辐射能量的变化引起的晶体长度没有差异。

8. 发明授权

US5634645A Sheet-like gasket with overlapped peripheral portions 失效
标题翻译：具有重叠周边部分的片状垫片
公开(公告)号：US5634645A
公开(公告)日：1997-06-03
申请号：US464867
申请日：1995-07-18
申请人： Masanori Seki , Takahisa Ueda , Akira Hashimoto , Toshiyasu Tanimura
发明人： Masanori Seki , Takahisa Ueda , Akira Hashimoto , Toshiyasu Tanimura
IPC分类号： B29D99/00 , B29K27/12 , F16J15/10
CPC分类号： F16J15/104
摘要： A sheet-like gasket formed of a material having a layered internal structure, for suppressing or preventing leakage penetration, and to attain very high sealing properties together with contact-surface leakage reduction. The sheet-like gasket has two base members each including spaced apart high-density faces and having an outer end portion 1A1 and an inner end portion 1B1 of sheet-like base members 1A and 1B which are adjacent in an inner and outer relationship which are partially overlapped. The whole gasket including the overlap portion is formed by pressurization so as to have a substantially uniform thickness. As a result, double high-density layers and are formed in the overlap portion where the base members are bonded.
摘要翻译： PCT No.PCT / JP94 / 00870 Sec。 371 1995年7月18日第 102（e）1995年7月18日PCT PCT 1994年5月30日PCT公布。 WO95 / 20732 PCT出版物日期1995年3月8日一种由具有分层内部结构的材料形成的片状垫圈，用于抑制或防止泄漏渗透，并且与接触面泄漏减少一起获得非常高的密封性能。片状垫片具有两个基部构件，每个基部构件具有间隔开的高密度面，并且具有内侧和外侧相邻的片状基部构件1A和1B的外端部1A1和内端部1B1，部分重叠。包括重叠部分的整个垫片通过加压形成，从而具有基本均匀的厚度。结果，双层高密度层形成在与基底构件接合的重叠部分中。

9. 发明授权

US07381632B2 Semiconductor thin film crystallization device and semiconductor thin film crystallization method 失效
公开(公告)号：US07381632B2
公开(公告)日：2008-06-03
申请号：US11190707
申请日：2005-07-26
申请人： Tetsuya Inui , Junichiro Nakayama , Yoshihiro Taniguchi , Masanori Seki , Hiroshi Tsunasawa , Ikumi Kashiwagi
发明人： Tetsuya Inui , Junichiro Nakayama , Yoshihiro Taniguchi , Masanori Seki , Hiroshi Tsunasawa , Ikumi Kashiwagi
IPC分类号： H01L21/36
CPC分类号： H01L21/0268 , B23K26/0604 , B23K26/0608 , B23K26/0622 , B23K26/0732 , B23K26/0738 , H01L21/02686 , H01L21/2026 , H01L21/268 , H01L27/1285 , H01L29/04 , H01L29/6675 , H01L29/78672 , H01L29/78696
摘要： A first laser beam is emitted from a first laser oscillator in a pulsed manner at a high repetition frequency, and converged onto a substrate by a first intermediate optical system 2 so as to form a slit-like first beam spot. A second laser beam is emitted from a second laser beam oscillator in a pulsed manner to rise precedent to and fall subsequent to the first laser beam, and converged onto the substrate by a second intermediate optical system so as to form a second beam spot similar in configuration to the first beam spot and to contain the first beam spot. Crystallization of a semiconductor thin film on the substrate is carried out while the substrate or the first, second beam spots are moved. Thereby, the whole semiconductor thin film is formed into a crystal surface that has grown in one direction and free from ridges. Thus, the semiconductor thin film has an extremely flat surface, extremely few defects, large crystal grains and high throughput.

10. 发明申请

US20080084901A1 Semiconductor thin film crystallization device and semiconductor thin film crystallization method 审中-公开
标题翻译：半导体薄膜结晶装置和半导体薄膜结晶方法
公开(公告)号：US20080084901A1
公开(公告)日：2008-04-10
申请号：US11982568
申请日：2007-11-02
申请人： Tetsuya Inui , Junichiro Nakayama , Yoshihiro Taniguchi , Masanori Seki , Hiroshi Tsunasawa , Ikumi Kashiwagi
发明人： Tetsuya Inui , Junichiro Nakayama , Yoshihiro Taniguchi , Masanori Seki , Hiroshi Tsunasawa , Ikumi Kashiwagi
IPC分类号： H01S3/10 , H01L31/0248
CPC分类号： H01L21/0268 , B23K26/0604 , B23K26/0608 , B23K26/0622 , B23K26/0732 , B23K26/0738 , H01L21/02686 , H01L21/2026 , H01L21/268 , H01L27/1285 , H01L29/04 , H01L29/6675 , H01L29/78672 , H01L29/78696
摘要： A first laser beam is emitted from a first laser oscillator in a pulsed manner at a high repetition frequency, and converged onto a substrate by a first intermediate optical system 2 so as to form a slit-like first beam spot. A second laser beam is emitted from a second laser beam oscillator in a pulsed manner to rise precedent to and fall subsequent to the first laser beam, and converged onto the substrate by a second intermediate optical system so as to form a second beam spot similar in configuration to the first beam spot and to contain the first beam spot. Crystallization of a semiconductor thin film on the substrate is carried out while the substrate or the first, second beam spots are moved. Thereby, the whole semiconductor thin film is formed into a crystal surface that has grown in one direction and free from ridges. Thus, the semiconductor thin film has an extremely flat surface, extremely few defects, large crystal grains and high throughput.
摘要翻译：第一激光束以高重复频率以脉冲方式从第一激光振荡器发射，并且通过第一中间光学系统2会聚到基板上，以形成狭缝状的第一光束点。第二激光束以脉冲方式从第二激光束振荡器发射，以在第一激光束之前先进并落下，并且通过第二中间光学系统会聚到衬底上，以形成与第二激光束相似的第二光束点配置到第一束斑并且包含第一束斑。在基板或第一，第二光束点移动的同时进行半导体薄膜在基板上的结晶。由此，整个半导体薄膜形成为在一个方向上生长并且没有脊的晶体表面。因此，半导体薄膜具有非常平坦的表面，极少的缺陷，大的晶粒和高的通量。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式