专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20130021239A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20130021239A1
公开(公告)日：2013-01-24
申请号：US13545768
申请日：2012-07-10
申请人： Jun KOYAMA , Hiroyuki MIYAKE , Hideaki SHISHIDO , Seiko INOUE , Kouhei TOYOTAKA , Koji KUSUNOKI , Hikaru HARADA , Makoto KANEYASU
发明人： Jun KOYAMA , Hiroyuki MIYAKE , Hideaki SHISHIDO , Seiko INOUE , Kouhei TOYOTAKA , Koji KUSUNOKI , Hikaru HARADA , Makoto KANEYASU
IPC分类号： G09G3/36 , G06F3/038 , G06F3/01
CPC分类号： H04N13/376 , H04N13/315 , H04N13/324 , H04N13/356 , H04N13/373
摘要： A display device includes a display panel including a plurality of pixels, a shutter panel including a driver circuit, a liquid crystal, and light-transmitting electrodes provided in a striped manner, and a positional data detector configured to detect a positional data of a viewer. The shutter panel is provided over a display surface side of the display panel, a width of one of the light-transmitting electrodes in the shutter panel is smaller than that of one of the plurality of pixels, and the driver circuit in the shutter panel is configured to selectively output signals for forming a parallax barrier to the light-transmitting electrodes. The parallax barrier is capable of changing its shape in accordance with the detected positional data.
摘要翻译：一种显示装置，包括：包括多个像素的显示面板;包括驱动电路的快门面板;液晶;以条纹方式设置的透光电极;以及位置数据检测器，被配置为检测观察者的位置数据。快门面板设置在显示面板的显示面侧，快门面板中的一个透光电极的宽度小于多个像素中的一个透光电极的宽度，而快门面板中的驱动电路为被配置为选择性地输出用于形成对透光电极的视差屏障的信号。视差屏障能够根据检测到的位置数据改变其形状。

2. 发明申请

US20120001881A1 DRIVING METHOD OF LIQUID CRYSTAL DISPLAY DEVICE 有权
标题翻译：液晶显示装置的驱动方法
公开(公告)号：US20120001881A1
公开(公告)日：2012-01-05
申请号：US13111278
申请日：2011-05-19
申请人： Hiroyuki MIYAKE , Hideaki SHISHIDO , Ryo ARASAWA
发明人： Hiroyuki MIYAKE , Hideaki SHISHIDO , Ryo ARASAWA
IPC分类号： G06F3/038 , H01L29/02
CPC分类号： G09G3/3648 , G06F1/3265 , G06F3/038 , G09G3/3614 , H01L27/1225 , H01L29/02 , Y02D10/153
摘要： An object is to provide a driving method of a liquid crystal display device with a low power consumption and a high image quality. A pixel includes a liquid crystal element and a transistor which controls supply of an image signal to the liquid crystal element. The transistor includes, in a channel formation region, a semiconductor which has a wider band gap than a silicon semiconductor and has a lower intrinsic carrier density than silicon, and has an extremely low off-state current. In inversion driving of pixels, image signals having opposite polarities are input to a pair of signal lines between which a pixel electrode is disposed. By employing such a structure, the quality of the displayed image can be increased even in the absence of a capacitor in the pixel.
摘要翻译：本发明的目的是提供一种具有低功耗和高图像质量的液晶显示装置的驱动方法。像素包括液晶元件和控制向液晶元件提供图像信号的晶体管。晶体管在沟道形成区域中包括具有比硅半导体更宽的带隙并且具有比硅更低的本征载流子密度的半导体，并且具有非常低的截止电流。在像素的反转驱动中，具有相反极性的图像信号被输入到一对信号线，在该对信号线之间设置有像素电极。通过采用这样的结构，即使在像素中没有电容器的情况下，也可以提高显示图像的质量。

3. 发明申请

US20090289174A1 PHOTOELECTRIC CONVERSION DEVICE, DRIVING METHOD THEREOF, AND ELECTRONIC DEVICE PROVIDED WITH THE SAME 有权
标题翻译：光电转换装置及其驱动方法及其提供的电子装置
公开(公告)号：US20090289174A1
公开(公告)日：2009-11-26
申请号：US12467001
申请日：2009-05-15
申请人： Jun KOYAMA , Yoshifumi TANADA , Hideaki SHISHIDO , Seiko AMANO , Makoto YANAGISAWA
发明人： Jun KOYAMA , Yoshifumi TANADA , Hideaki SHISHIDO , Seiko AMANO , Makoto YANAGISAWA
IPC分类号： H03K17/78
CPC分类号： H04N5/37455 , G01J1/4204 , G01J1/46
摘要： Objects are to accumulate electric charge in a capacitor so that light intensity can be detected even when the amount of incident light is small, and to operate a photoelectric conversion device without increasing the number of elements such as a constant current source or a switch. The photoelectric conversion device includes a photoelectric conversion circuit, a capacitor, and a comparator for comparing a potential of one electrode of the capacitor with a second potential. The photoelectric conversion circuit includes a photoelectric conversion element and an amplifier circuit for amplifying an output current from the photoelectric conversion element In the capacitor, a first potential is supplied through a first switch, and charging or discharging is performed through a second switch in accordance with the current amplified by the amplifier circuit.
摘要翻译：目的是在电容器中蓄积电荷，使得即使入射光量较小也能够检测光强度，并且在不增加诸如恒流源或开关的元件数量的情况下操作光电转换装置。光电转换装置包括光电转换电路，电容器和用于将电容器的一个电极的电位与第二电位进行比较的比较器。光电转换电路包括光电转换元件和用于放大来自电容器中的光电转换元件的输出电流的放大电路，通过第一开关提供第一电位，并且通过第二开关执行充电或放电电流由放大电路放大。

4. 发明申请

US20090230292A1 PROTECTION CIRCUIT AND PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：保护电路和光电转换器件
公开(公告)号：US20090230292A1
公开(公告)日：2009-09-17
申请号：US12398465
申请日：2009-03-05
申请人： Jun KOYAMA , Yoshifumi TANADA , Hideaki SHISHIDO
发明人： Jun KOYAMA , Yoshifumi TANADA , Hideaki SHISHIDO
IPC分类号： H01J40/14 , H02H9/04
CPC分类号： H02H9/04 , H02H7/20 , Y02E10/56
摘要： A protection circuit and a photoelectric conversion device are provided, each of which includes a first wiring, a second wiring, a first switch, a second switch, a capacitor, and a comparing circuit configured to generate a signal corresponding to a potential of the first wiring and a potential of the second wiring, and supply the signal to the first switch and the second switch. The first wiring is electrically connected to a first terminal of the first switch, and the second wiring is electrically connected to a first terminal of the second switch. A second terminal of the first switch is electrically connected to a first electrode of the capacitor, and a second terminal of the second switch is electrically connected to a second electrode of the capacitor.
摘要翻译：提供一种保护电路和光电转换装置，每个保护电路和光电转换装置包括第一布线，第二布线，第一开关，第二开关，电容器和比较电路，其被配置为产生对应于第一布线布线和第二布线的电位，并将信号提供给第一开关和第二开关。第一布线电连接到第一开关的第一端子，第二布线电连接到第二开关的第一端子。第一开关的第二端子电连接到电容器的第一电极，第二开关的第二端子电连接到电容器的第二电极。

5. 发明申请

US20100116972A1 PHOTOELECTRIC CONVERSION DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME 有权
标题翻译：光电转换装置和包括该光电转换装置的电子装置
公开(公告)号：US20100116972A1
公开(公告)日：2010-05-13
申请号：US12614537
申请日：2009-11-09
申请人： Jun KOYAMA , Hideaki SHISHIDO
发明人： Jun KOYAMA , Hideaki SHISHIDO
IPC分类号： H01L31/075
CPC分类号： H01L27/14 , H01L31/12
摘要： An object is to provide a photoelectric conversion device which can correct a difference between a measured light intensity and an actual light intensity, which occurs when output current decreases due to the fact that a strong light is received, and outputs the corrected current. The photoelectric conversion device includes a photoelectric conversion element; a photocurrent output circuit for providing a first current corresponding to the amount of incident light on the photoelectric conversion element; a photocurrent correcting circuit which includes a corrective photoelectric conversion element for providing a second current, the corrective photoelectric conversion element including a light shield film for blocking part of light; a photocurrent adder circuit which includes a circuit for providing a fourth current; and an amplifier circuit including a circuit which amplifies a current corresponding to the sum of the first current and the fourth current and outputs the amplified current.
摘要翻译：本发明的目的是提供一种光电转换装置，其可以校正由于接收到强光而导致输出电流下降而发生的测量光强度和实际光强度之间的差异，并输出校正后的电流。光电转换装置包括光电转换元件; 光电流输出电路，用于提供与光电转换元件上的入射光量相对应的第一电流; 光电流校正电路，其包括用于提供第二电流的校正光电转换元件，所述校正光电转换元件包括用于阻挡部分光的遮光膜; 光电流加法器电路，其包括用于提供第四电流的电路; 以及放大电路，包括放大对应于第一电流和第四电流之和的电流的电路，并输出放大的电流。

6. 发明申请

US20060262054A1 DISPLAY DEVICE AND ELECTRONIC APPARATUS 有权
标题翻译：显示设备和电子设备
公开(公告)号：US20060262054A1
公开(公告)日：2006-11-23
申请号：US11419345
申请日：2006-05-19
申请人： Shunpei YAMAZAKI , Jun KOYAMA , Yoshifumi TANADA , Mitsuaki OSAME , Hajime KIMURA , Ryota FUKUMOTO , Hiromi YANAI , Hideaki SHISHIDO
发明人： Shunpei YAMAZAKI , Jun KOYAMA , Yoshifumi TANADA , Mitsuaki OSAME , Hajime KIMURA , Ryota FUKUMOTO , Hiromi YANAI , Hideaki SHISHIDO
IPC分类号： G09G3/30
CPC分类号： G09G3/20 , G09G3/2022 , G09G3/3225 , G09G2300/0861 , G09G2310/0267 , G09G2310/0275 , G09G2330/021 , G09G2340/0428 , G09G2360/141 , G09G2360/144
摘要： Outside light is received using a light sensor, and in accordance with the outside light intensity, each of a first display mode which expresses multiple gray scales and a second display-y mode which expresses a gray scale smaller in number than that in the first display mode is switched and used. The switching is controlled by a display controller based on data of the outside light intensity. Accordingly, the visibility can be ensured in a wide range of situations, from under a fluorescent lamp in a dark place or inside, to under sunlight outside. In the second display mode, frequencies of a start pulse and a clock pulse to be inputted to a source signal line driver circuit are reduced and a driving voltage is decreased by the display controller; accordingly, a frame period can be longer than that in the first display mode and power consumption can be reduced.
摘要翻译：使用光传感器接收外部光，并且根据外部光强度，表示多个灰度级的第一显示模式和表示比第一显示器中的数字更小的灰度级的第二显示器y模式模式被切换和使用。基于外部光强度的数据，由显示控制器控制切换。因此，可以在广泛的情况下，从在黑暗的地方或内部的荧光灯到室外的阳光下确保可视性。在第二显示模式中，通过显示控制器减少要输入到源极信号线驱动电路的起始脉冲和时钟脉冲的频率，并降低驱动电压。因此，帧周期可以比第一显示模式中的帧周期长，并且可以降低功耗。

7. 发明申请

US20120211749A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120211749A1
公开(公告)日：2012-08-23
申请号：US13461940
申请日：2012-05-02
申请人： Osamu FUKUOKA , Masahiko HAYAKAWA , Hideaki SHISHIDO
发明人： Osamu FUKUOKA , Masahiko HAYAKAWA , Hideaki SHISHIDO
IPC分类号： H01L31/0376 , H01L31/0368
CPC分类号： H01L27/1262 , H01L27/0255 , H01L27/12 , H01L27/1214 , H01L27/1277
摘要： To improve the performance of a protection circuit including a diode formed using a semiconductor film. A protection circuit is inserted between two input/output terminals. The protection circuit includes a diode which is formed over an insulating surface and is formed using a semiconductor film. Contact holes for connecting an n-type impurity region and a p-type impurity region of the diode to a first conductive film in the protection circuit are distributed over the entire impurity regions. Further, contact holes for connecting the first conductive film and a second conductive film in the protection circuit are dispersively formed over the semiconductor film. By forming the contact holes in this manner, wiring resistance between the diode and a terminal can be reduced and the entire semiconductor film of the diode can be effectively serve as a rectifier element.
摘要翻译：提高包括使用半导体膜形成的二极管的保护电路的性能。一个保护电路插在两个输入/输出端子之间。保护电路包括形成在绝缘表面上并使用半导体膜形成的二极管。用于将二极管的n型杂质区域和p型杂质区域连接到保护电路中的第一导电膜的接触孔分布在整个杂质区域上。此外，用于连接保护电路中的第一导电膜和第二导电膜的接触孔分散地形成在半导体膜上。通过以这种方式形成接触孔，可以减小二极管和端子之间的布线电阻，并且二极管的整个半导体膜可以有效地用作整流元件。

8. 发明申请

US20120154456A1 DISPLAY DEVICE, DRIVING METHOD OF DISPLAY DEVICE, AND ELECTRONIC APPLIANCE 审中-公开
标题翻译：显示装置，显示装置的驱动方法和电子设备
公开(公告)号：US20120154456A1
公开(公告)日：2012-06-21
申请号：US13368604
申请日：2012-02-08
申请人： Hajime KIMURA , Hideaki SHISHIDO , Shunpei YAMAZAKI
发明人： Hajime KIMURA , Hideaki SHISHIDO , Shunpei YAMAZAKI
IPC分类号： G09G5/00 , G09G5/10
CPC分类号： H01L27/1225 , G09G3/2022 , G09G3/2074 , G09G3/288 , G09G3/3233 , G09G2300/0443 , G09G2300/0452 , G09G2300/0465 , G09G2300/0842 , G09G2300/0861 , G09G2300/0866 , G09G2310/0262 , G09G2320/0261 , G09G2320/0266 , G09G2330/021
摘要： A semiconductor device including a plurality of pixels over a substrate and a display medium including an electronic ink over the substrate, in which at least one pixel of the plurality of pixels comprises first and second subpixels each of which comprises a transistor that comprises an oxide semiconductor including indium, and in which one image of at least one of the plurality of pixels is displayed by a plurality of signals, is provided.
摘要翻译：一种在衬底上包括多个像素的半导体器件以及包括在衬底上的电子墨水的显示介质，其中多个像素中的至少一个像素包括第一和第二子像素，每个子像素包括包含氧化物半导体包括铟，并且其中通过多个信号显示多个像素中的至少一个的一个图像。

9. 发明申请

US20110068334A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110068334A1
公开(公告)日：2011-03-24
申请号：US12887606
申请日：2010-09-22
申请人： Shunpei YAMAZAKI , Hideaki SHISHIDO
发明人： Shunpei YAMAZAKI , Hideaki SHISHIDO
IPC分类号： H01L33/28
CPC分类号： H01L27/14603 , B82Y30/00 , G02F1/133707 , G02F1/1339 , G02F1/134309 , G02F1/13439 , G02F1/1345 , G02F1/136204 , G02F1/13624 , G02F2001/133388 , G02F2001/133622 , G02F2001/13606 , G02F2001/136231 , G02F2001/136236 , G02F2001/13629 , G02F2001/136295 , G02F2202/16 , G02F2202/36 , H01L27/1225 , H01L29/78636 , H01L29/7869
摘要： Disclosed is a semiconductor device which consumes low power and has high reliability and tolerance for electrostatic discharge. The semiconductor device includes, over a first substrate, a pixel portion and a driver circuit portion both of which have a thin film transistor having an oxide semiconductor layer. The semiconductor device further possesses a second substrate to which a first counter electrode layer and a second counter electrode layer are provided, and a liquid crystal layer is interposed between the first and second substrates. The first and second counter electrode layers are provided over the pixel portion and the driver circuit portion, respectively, and the second counter electrode layer has the same potential as the first counter electrode layer.
摘要翻译：公开了一种消耗低功率并具有高静电放电可靠性和耐受性的半导体器件。半导体器件包括在第一衬底上的像素部分和驱动器电路部分，它们都具有具有氧化物半导体层的薄膜晶体管。半导体器件还具有设置第一对置电极层和第二对电极层的第二基板，并且在第一和第二基板之间插入液晶层。第一和第二对电极层分别设置在像素部分和驱动电路部分上，第二对电极层具有与第一对电极层相同的电位。

10. 发明申请

US20090321869A1 SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE 有权
标题翻译：半导体器件和电子器件
公开(公告)号：US20090321869A1
公开(公告)日：2009-12-31
申请号：US12479291
申请日：2009-06-05
申请人： Osamu FUKUOKA , Masahiko HAYAKAWA , Hideaki SHISHIDO
发明人： Osamu FUKUOKA , Masahiko HAYAKAWA , Hideaki SHISHIDO
IPC分类号： H01L31/103
CPC分类号： H01L27/14692 , H01L24/06 , H01L27/14603 , H01L27/14609 , H01L27/14636 , H01L2924/12043 , H01L2924/15788 , H01L2924/00
摘要： A semiconductor device has a structure including the first semiconductor region 103 which is provided in the first terminal portion 100 and includes the first n-type impurity region 106, the first resistance region 107 provided at an inner periphery portion of the first n-type impurity region 106 in a plane view, and the first p-type impurity region 108 provided at an inner periphery portion of the first resistance region 107 in the plane view, and the second semiconductor region 104 which is provided in the second terminal portion 101 and includes the second p-type impurity region 109, the second resistance region 110 provided at an inner periphery portion of the second p-type impurity region 109 in the plane view, and the second n-type impurity region 111 provided at an inner periphery portion of the second resistance region 110 in the plane view.
摘要翻译：半导体器件具有包括设置在第一端子部分100中并包括第一n型杂质区域106的第一半导体区域103的结构，设置在第一n型杂质的内周部分的第一电阻区域107 在俯视图中设置在第一电阻区域107的内周部的第一p型杂质区域108和设置在第二端子部101中的第二半导体区域104，第二p型杂质区域109，在平面图中设置在第二p型杂质区域109的内周部分的第二电阻区域110和设置在第二p型杂质区域109的内周部分的第二n型杂质区域111 平面图中的第二电阻区域110。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式