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1. 发明申请

US20070041214A1 Rod type light emitting device and method for fabricating the same 有权
标题翻译：杆式发光装置及其制造方法
公开(公告)号：US20070041214A1
公开(公告)日：2007-02-22
申请号：US11436771
申请日：2006-05-19
申请人： Jun Ha , Jong Kim
发明人： Jun Ha , Jong Kim
IPC分类号： F21V7/04
CPC分类号： H01L33/18 , B82Y20/00 , H01L33/0079 , H01L33/08 , H01L33/28 , H01L33/32 , Y10S977/95
摘要： A rod type light emitting device and a method for fabricating the same are disclosed, wherein rods are formed of a material capable of emitting light on a first polarity layer, and a second polarity layer is formed to wrap around each of the rods, such that a light emitting area increases and the amount of light emitted to the outside without being confined within a device also increases, thereby improving the light output of the device. Further, an active layer is formed of a nano rod structure to enhance light extraction efficiency.
摘要翻译：公开了一种杆型发光器件及其制造方法，其中棒材由能够在第一极性层上发光的材料形成，并且形成第二极性层以围绕每个棒包裹，使得发光区域增加，并且在不被限制在装置内的情况下发射到外部的光量也增加，从而提高装置的光输出。此外，活性层由纳米棒结构形成以增强光提取效率。

2. 发明申请

US20060145174A1 High output light emitting diode and method for fabricating the same 有权
标题翻译：高输出发光二极管及其制造方法
公开(公告)号：US20060145174A1
公开(公告)日：2006-07-06
申请号：US11318505
申请日：2005-12-28
申请人： Hyun Lee , Jun Ha
发明人： Hyun Lee , Jun Ha
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/46
摘要： A high output light emitting diode (LED) and a method for fabricating the LED is disclosed. The LED includes a sidewall or surface that is inclined. A reflective film is formed on the inclined sidewall or surface to allow light to reflect from the reflective film and to emit the light upward or in a favorable direction with respect to the device, thereby being configured and enabled to improve a light output of the LED and dispense with an additional passivation process.
摘要翻译：公开了一种高输出发光二极管（LED）及其制造方法。 LED包括倾斜的侧壁或表面。反射膜形成在倾斜的侧壁或表面上，以允许光从反射膜反射并且向上或相对于该装置的有利方向发射光，从而被配置和使得能够改善LED的光输出并省去额外的钝化过程。

3. 发明申请

US20060097274A1 Light emitting device and method for fabricating the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US20060097274A1
公开(公告)日：2006-05-11
申请号：US11267320
申请日：2005-11-07
申请人： Hyun Lee , Jun Ha
发明人： Hyun Lee , Jun Ha
IPC分类号： H01L33/00
CPC分类号： H01L33/64 , H01L33/0079 , H01L33/20 , H01L33/46 , H01L2933/0075
摘要： A light emitting device and a method for fabricating the same according to the present invention are advantageous in that since an LLO (Laser Lift Off) process is performed using a thick metal film grown through a growth process, an occurrence rate of a void is remarkably decreased due to dense bonding between metals so that an occurrence rate of a crack can be decreased. Further, the present invention has an advantage in that a metal is filled in trench regions formed through an isolation process for devices, thereby protecting the devices and ensuring excellent heat dissipation. The present invention has a further advantage in that a reflective film is formed on inclined sidewalls of a device-forming thin film layer so that light loss through lateral sides of the device can be reduced, thereby improving optical properties.
摘要翻译：根据本发明的发光器件及其制造方法的优点在于，由于使用通过生长工艺生长的厚金属膜进行LLO（激光剥离）工艺，所以空隙的发生率显着地由于金属之间的致密结合而降低，从而可以降低裂缝的发生率。此外，本发明的优点在于，金属填充在通过器件的隔离工艺形成的沟槽区域中，从而保护器件并确保优异的散热。本发明的另一个优点在于，在器件形成薄膜层的倾斜侧壁上形成反射膜，从而可以减少通过器件侧面的光损失，从而提高光学性能。

4. 发明申请

US20070252165A1 Light emitting device having vertical structure and method for manufacturing the same 有权
标题翻译：具有垂直结构的发光器件及其制造方法
公开(公告)号：US20070252165A1
公开(公告)日：2007-11-01
申请号：US11706977
申请日：2007-02-16
申请人： Jun Jang , Jun Ha
发明人： Jun Jang , Jun Ha
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/42 , H01L33/0079
摘要： A light emitting device having a vertical structure, which includes a semiconductor layer having a first surface and a second surface, a first electrode arranged on the first surface of the semiconductor layer, a transparent conductive oxide (TCO) layer arranged on the second surface of the semiconductor layer and a second electrode arranged on the TCO layer.
摘要翻译：一种具有垂直结构的发光器件，其包括具有第一表面和第二表面的半导体层，布置在半导体层的第一表面上的第一电极，布置在半导体层的第二表面上的透明导电氧化物（TCO）层所述半导体层和布置在所述TCO层上的第二电极。

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