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1. 发明授权

US5578860A Monolithic high frequency integrated circuit structure having a grounded source configuration 失效
标题翻译：具有接地源配置的单片高频集成电路结构
公开(公告)号：US5578860A
公开(公告)日：1996-11-26
申请号：US431948
申请日：1995-05-01
申请人： Julio C. Costa , Wayne R. Burger , Natalino Camilleri , Christopher P. Dragon , Daniel J. Lamey , David K. Lovelace , David Q. Ngo
发明人： Julio C. Costa , Wayne R. Burger , Natalino Camilleri , Christopher P. Dragon , Daniel J. Lamey , David K. Lovelace , David Q. Ngo
IPC分类号： H01F17/00 , H01L21/822 , H01L21/8234 , H01L27/02 , H01L27/04 , H01L27/06 , H01L27/088 , H01L29/10 , H01L29/417 , H01L29/78 , H01L23/62 , H01L29/00 , H01L29/76
CPC分类号： H01L27/0251 , H01L27/0617 , H01L29/7835 , H01L29/1045 , H01L29/4175
摘要： A high frequency power FET device (22) is integrated with passive components (23,24,26,28,31), an electro-static discharge (ESD) device (27,127,227), and/or a logic structure (29) on a semiconductor body (13) to form a monolithic high frequency integrated circuit structure (10). The high frequency power FET device (22) includes a grounded source configuration. The logic structure (29) utilizes the high frequency power FET structure in a grounded source configuration as one device in a CMOS implementation.
摘要翻译：高频功率FET器件（22）与无源元件（23,24,26,28,31），静电放电（ESD）器件（27,127,227）和/或逻辑结构（29）集成在一起半导体本体（13），以形成单片高频集成电路结构（10）。高频功率FET器件（22）包括接地源配置。逻辑结构（29）利用接地源配置中的高频功率FET结构作为CMOS实现中的一个器件。

2. 发明授权

US5477192A Amplifier suitable for use in a radiotelephone 失效
标题翻译：放大器适用于无线电话
公开(公告)号：US5477192A
公开(公告)日：1995-12-19
申请号：US333408
申请日：1994-11-02
申请人： Gregory R. Black , Natalino Camilleri , David Q. Ngo
发明人： Gregory R. Black , Natalino Camilleri , David Q. Ngo
IPC分类号： H03F3/343 , H03F3/04 , H03F3/16 , H03F3/193 , H03F3/195 , H03F3/347 , H03G3/30 , H04B1/38
CPC分类号： H03F3/193 , H03F3/195
摘要： The amplifier (201) uses transistors (401,403) such as MOSFET transistors in a current mirror configuration. The transistors (401,403) are easy to package as surface mount devices. The drain port of the first transistor is coupled to an output signal (207) and a bias input signal (VB+). A gate port of the first transistor is coupled to a bias control input (117) and the signal input (115). The source of the first transistor and the source of the second transistor are coupled to an electrical ground (409). A first end of a resistive device (411) is coupled to the gate port and the drain port of the second transistor and a second end of the resistive device (411) is coupled the signal input (115) and the bias control input (117). This amplifier (201) has low sensitivity to the variations of the bias current to the control signal threshold, making the amplifier ideal for use in a radiotelephone (103).
摘要翻译：放大器（201）以电流反射镜配置使用诸如MOSFET晶体管的晶体管（401,403）。晶体管（401,403）易于作为表面贴装器件封装。第一晶体管的漏极端口耦合到输出信号（207）和偏置输入信号（VB +）。第一晶体管的栅极端口耦合到偏置控制输入（117）和信号输入端（115）。第一晶体管的源极和第二晶体管的源极耦合到电接地（409）。电阻器件（411）的第一端耦合到第二晶体管的栅极端口和漏极端口，并且电阻器件（411）的第二端耦合到信号输入端（115）和偏置控制输入端（117））。该放大器（201）对偏置电流对控制信号阈值的变化具有低灵敏度，使得放大器理想地用于无线电话机（103）。

3. 发明授权

US4970456A Temperature compensated power detector 失效
标题翻译：温度补偿功率检测器
公开(公告)号：US4970456A
公开(公告)日：1990-11-13
申请号：US294093
申请日：1989-01-09
申请人： Don R. Holcomb , David Q. Ngo
发明人： Don R. Holcomb , David Q. Ngo
IPC分类号： G01R1/44 , G01R21/10
CPC分类号： G01R21/10 , G01R1/44
摘要： A temperature compensated power detector utilizes a temperature compensating diode connected to an inverting input of an amplifier to enable the amplifier to substantially cancel out undesirable temperature effects caused by a power level detector diode coupled to the non-inverting input of the amplifier. As a result, the amplifier output voltage tends to remain constant over temperature in response to a fixed power level being applied to the detector. A lookup table is utilized to determine the power level corresponding to a power detector output voltage of a particular magnitude.
摘要翻译：温度补偿功率检测器利用连接到放大器的反相输入端的温度补偿二极管使得放大器能够基本上消除由耦合到放大器的非反相输入端的功率电平检测器二极管引起的不期望的温度效应。结果，响应于施加到检测器的固定功率电平，放大器输出电压倾向于在温度上保持恒定。使用查找表来确定与特定大小的功率检测器输出电压相对应的功率电平。

4. 发明授权

US06724252B2 Switched gain amplifier circuit 有权
标题翻译：开关增益放大器电路
公开(公告)号：US06724252B2
公开(公告)日：2004-04-20
申请号：US10080187
申请日：2002-02-21
申请人： David Q. Ngo , Mike B. Thomas , Christopher B. Foye
发明人： David Q. Ngo , Mike B. Thomas , Christopher B. Foye
IPC分类号： H03G900
CPC分类号： H03G3/3047 , H03F3/72 , H03F2200/372 , H03F2203/7227 , H03G3/004 , H03G3/3042
摘要： An amplifier chain that switches between a saturated mode of operation and a linear mode of operation comprises at least two amplifier stages. A switch is associated with the first amplifier stage and dampens the gain of the amplifier chain when the switch is closed. In a first embodiment, this is done by bypassing the first amplifier stage. In second and third embodiments, this is done by providing a feedback loop to the first amplifier stage. Dynamic device scaling and changing the bias may also be used to affect the performance of the amplifier chain.
摘要翻译：在饱和操作模式和线性工作模式之间切换的放大器链包括至少两个放大器级。开关与第一放大器级相关联，并且当开关闭合时抑制放大器链的增益。在第一实施例中，这是通过绕过第一放大器级完成的。在第二和第三实施例中，这通过向第一放大器级提供反馈回路来完成。动态设备缩放和改变偏差也可用于影响放大器链的性能。

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