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    • 1. 发明申请
    • TERAHERTZ WAVE EMISSION LASER DEVICE
    • TERAHERTZ波浪发射激光器件
    • US20110188525A1
    • 2011-08-04
    • US12997425
    • 2009-05-12
    • Julien ClaudonJean-Michel GérardVincent BergerGiuseppe LeoAlessio Andronico
    • Julien ClaudonJean-Michel GérardVincent BergerGiuseppe LeoAlessio Andronico
    • H01S3/042H01S5/343H01L33/06
    • H01S5/1075G02F1/3534H01S1/02H01S5/0604H01S2302/02
    • A laser device having a wave emission within a frequency range of 0.5 to 5 THz, includes a semiconductor heterostructure having a cylindrical form with a circular cross-section and including: a first optically nonlinear semiconductor material layer including an emitting medium configured to emit at least two optical whispering gallery modes belonging to the near-infrared spectrum, the two whispering gallery modes being confined within the first layer and enabling the generation, within the first layer, of radiation within an electromagnetic whispering gallery mode having a frequency of 0.5 to 5 THz, the radiation being obtained through the difference in frequency of the two whispering gallery modes, the cylindrical geometry of the heterostructure ensuring phase tuning between the two optical whispering gallery modes belonging to the near-infrared spectrum and the terahertz mode at the difference in frequency; a second and a third semiconductor material layer, each having an optical index weaker than the index of the material of the first layer and located on both sides of the first layer; at least one metal layer located on one end of the hetero structure.
    • 具有在0.5至5THz的频率范围内的波发射的激光器件包括具有圆形横截面的圆柱形形状的半导体异质结构,包括:第一光学非线性半导体材料层,其包括被配置为至少发射的发射介质 属于近红外光谱的两个光耳语画廊模式,两个耳语画廊模式被限制在第一层内,并且能够在第一层内产生频率为0.5至5THz的电磁耳语画廊模式内的辐射 通过两个耳语画廊模式的频率差异获得的辐射,异质结构的圆柱几何形状,确保属于近红外光谱的两个光学语音模式模式与频率差异的太赫兹模式之间的相位调谐; 第二和第三半导体材料层,每个具有比第一层的材料的折射率弱且位于第一层两侧的光学折射率; 位于异质结构一端的至少一个金属层。
    • 2. 发明授权
    • Terahertz wave emission laser device
    • 太赫兹波发射激光装置
    • US08755414B2
    • 2014-06-17
    • US12997425
    • 2009-05-12
    • Julien ClaudonJean-Michel GérardVincent BergerGiuseppe LeoAlessio Andronico
    • Julien ClaudonJean-Michel GérardVincent BergerGiuseppe LeoAlessio Andronico
    • H01S5/10H01S1/02
    • H01S5/1075G02F1/3534H01S1/02H01S5/0604H01S2302/02
    • A laser device having a wave emission within a frequency range of 0.5 to 5 THz, includes a semiconductor heterostructure having a cylindrical form with a circular cross-section and including: a first optically nonlinear semiconductor material layer including an emitting medium configured to emit at least two optical whispering gallery modes belonging to the near-infrared spectrum, the two whispering gallery modes being confined within the first layer and enabling the generation, within the first layer, of radiation within an electromagnetic whispering gallery mode having a frequency of 0.5 to 5 THz, the radiation being obtained through the difference in frequency of the two whispering gallery modes, the cylindrical geometry of the heterostructure ensuring phase tuning between the two optical whispering gallery modes belonging to the near-infrared spectrum and the terahertz mode at the difference in frequency; a second and a third semiconductor material layer, each having an optical index weaker than the index of the material of the first layer and located on both sides of the first layer; at least one metal layer located on one end of the hetero structure.
    • 具有在0.5至5THz的频率范围内的波发射的激光器件包括具有圆形横截面的圆柱形形状的半导体异质结构,包括:第一光学非线性半导体材料层,其包括被配置为至少发射的发射介质 属于近红外光谱的两个光耳语画廊模式,两个耳语画廊模式被限制在第一层内,并且能够在第一层内产生频率为0.5至5THz的电磁耳语画廊模式内的辐射 通过两个耳语画廊模式的频率差异获得的辐射,异质结构的圆柱形几何形状,确保属于近红外光谱的两个光学语音场模式和频率差异的太赫兹模式之间的相位调谐; 第二和第三半导体材料层,每个具有比第一层的材料的折射率弱且位于第一层两侧的光学折射率; 位于异质结构一端的至少一个金属层。