专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07755925B2 Static random access memory 有权
标题翻译：静态随机存取存储器
公开(公告)号：US07755925B2
公开(公告)日：2010-07-13
申请号：US11636524
申请日：2006-12-11
申请人： Jui-Lung Chen , Gia-Hua Hsieh , Yi-Hsun Chung , Chia-Chiuan Chang , Yu-Chih Yeh , Ho-Hsiang Chen
发明人： Jui-Lung Chen , Gia-Hua Hsieh , Yi-Hsun Chung , Chia-Chiuan Chang , Yu-Chih Yeh , Ho-Hsiang Chen
IPC分类号： G11C11/00
CPC分类号： G11C11/412 , G11C11/413
摘要： A static random access memory comprising a column driver, a row driver, a cell, and a control unit is disclosed. The column driver selects a first word line or a second word line. The row provides data to a first bit line and a second bit line. The data of the first bit line is opposite to that of the second bit line. The control unit controls the voltage of the cell. In normal mode, the voltage of the cell is equal to a second voltage. In stand-by mode, the voltage of the cell exceeds the second voltage.
摘要翻译：公开了一种包括列驱动器，行驱动器，单元和控制单元的静态随机存取存储器。列驱动器选择第一字线或第二字线。该行将数据提供给第一位线和第二位线。第一位线的数据与第二位线的数据相反。控制单元控制电池的电压。在正常模式下，电池的电压等于第二电压。在待机模式下，电池的电压超过第二电压。

2. 发明申请

US20080137398A1 Static random access memory 有权
标题翻译：静态随机存取存储器
公开(公告)号：US20080137398A1
公开(公告)日：2008-06-12
申请号：US11636524
申请日：2006-12-11
申请人： Jui-Lung Chen , Gia-Hua Hsieh , Yi-Hsun Chung , Chia-Chiuan Chang , Yu-Chih Yeh , Ho-Hsiang Chen
发明人： Jui-Lung Chen , Gia-Hua Hsieh , Yi-Hsun Chung , Chia-Chiuan Chang , Yu-Chih Yeh , Ho-Hsiang Chen
IPC分类号： G11C11/00
CPC分类号： G11C11/412 , G11C11/413
摘要： A static random access memory comprising a column driver, a row driver, a cell, and a control unit is disclosed. The column driver selects a first word line or a second word line. The row provides data to a first bit line and a second bit line. The data of the first bit line is opposite to that of the second bit line. The control unit controls the voltage of the cell. In normal mode, the voltage of the cell is equal to a second voltage. In stand-by mode, the voltage of the cell exceeds the second voltage.
摘要翻译：公开了一种包括列驱动器，行驱动器，单元和控制单元的静态随机存取存储器。列驱动器选择第一字线或第二字线。该行将数据提供给第一位线和第二位线。第一位线的数据与第二位线的数据相反。控制单元控制电池的电压。在正常模式下，电池的电压等于第二电压。在待机模式下，电池的电压超过第二电压。

3. 发明授权

US07916519B2 Burn-in methods for static random access memories and chips 有权
标题翻译：静态随机存取存储器和芯片的老化方法
公开(公告)号：US07916519B2
公开(公告)日：2011-03-29
申请号：US12368218
申请日：2009-02-09
申请人： Jui-Lung Chen , Wei-Shung Chen , Yi-Hsun Chung , Chia-Chiuan Chang
发明人： Jui-Lung Chen , Wei-Shung Chen , Yi-Hsun Chung , Chia-Chiuan Chang
IPC分类号： G11C11/00
CPC分类号： G11C29/02 , G11C11/41 , G11C29/025
摘要： A burn-in method for SRAMs and chips. For a memory cell of the SRAM, the SRAM burn-in method controls the control signals of the memory cell to generate current paths to pass through the memory cell, the corresponding bit-line and the corresponding bit-line-bar. The contacts/vias in the current paths are tested by providing burn-in currents to flow through the current paths, so that mismatched contacts/vias are burned by the burn-in currents. SRAMs that fail the burn-in test are abandoned after the burn-in procedure.
摘要翻译：一种SRAM和芯片的老化方法。对于SRAM的存储单元，SRAM老化方法控制存储器单元的控制信号，以产生通过存储单元，对应位线和相应位线条的电流路径。通过提供老化电流流过电流路径来测试电流路径中的触点/通孔，从而使不匹配的触点/通孔被老化电流烧毁。老化测试失败的SRAM在老化过程之后被放弃。

4. 发明申请

US20100202219A1 BURN-IN METHODS FOR STATIC RANDOM ACCESS MEMORIES AND CHIPS 有权
标题翻译：用于静态随机存取存储器和存储器的烧录方法
公开(公告)号：US20100202219A1
公开(公告)日：2010-08-12
申请号：US12368218
申请日：2009-02-09
申请人： Jui-Lung Chen , Wei-Shung Chen , Yi-Hsun Chung , Chia-Chiuan Chang
发明人： Jui-Lung Chen , Wei-Shung Chen , Yi-Hsun Chung , Chia-Chiuan Chang
IPC分类号： G11C7/00 , G11C29/00
CPC分类号： G11C29/02 , G11C11/41 , G11C29/025
摘要： A burn-in method for SRAMs and chips. For a memory cell of the SRAM, the SRAM burn-in method controls the control signals of the memory cell to generate current paths to pass through the memory cell, the corresponding bit-line and the corresponding bit-line-bar. The contacts/vias in the current paths are tested by providing burn-in currents to flow through the current paths, so that mismatched contacts/vias are burned by the burn-in currents. SRAMs that fail the burn-in test are abandoned after the burn-in procedure.
摘要翻译：一种SRAM和芯片的老化方法。对于SRAM的存储单元，SRAM老化方法控制存储器单元的控制信号，以产生通过存储单元，对应位线和相应位线条的电流路径。通过提供老化电流流过电流路径来测试电流路径中的触点/通孔，从而使不匹配的触点/通孔被老化电流烧毁。老化测试失败的SRAM在老化过程之后被放弃。

5. 发明授权

US07706203B2 Memory system 有权
标题翻译：内存系统
公开(公告)号：US07706203B2
公开(公告)日：2010-04-27
申请号：US12191116
申请日：2008-08-13
申请人： Jui-Lung Chen , Yi-Hsun Chung , Chia-Chiuan Chang , Wei-Shung Chen
发明人： Jui-Lung Chen , Yi-Hsun Chung , Chia-Chiuan Chang , Wei-Shung Chen
IPC分类号： G11C5/14
CPC分类号： G11C11/417 , G11C5/147 , G11C8/08
摘要： A memory system is provided, comprising at least one memory unit and a source power supply circuit. Each memory unit is coupled between a source voltage and a ground voltage and accesses digital data according to a word line signal and a bit line signal. The source power supply circuit provides the source voltage to the memory units. When the memory unit is in a writing status, the source voltage is the first power voltage. When the memory unit is in a reading status, the source voltage is the second power voltage. The second power voltage equals to the first power voltage subtracted by a specific voltage for avoiding rewriting error.
摘要翻译：提供一种存储器系统，包括至少一个存储器单元和源极电源电路。每个存储器单元耦合在源电压和接地电压之间，并根据字线信号和位线信号访问数字数据。源电源电路将源电压提供给存储器单元。当存储器单元处于写入状态时，源电压是第一个电源电压。当存储器单元处于读取状态时，源电压是第二个电源电压。第二电源电压等于由特定电压减去的第一个电源电压，以避免重写错误。

6. 发明申请

US20100177556A1 ASYMMETRIC STATIC RANDOM ACCESS MEMORY 审中-公开
标题翻译：不对称静态随机存取存储器
公开(公告)号：US20100177556A1
公开(公告)日：2010-07-15
申请号：US12351772
申请日：2009-01-09
申请人： Jui-Lung Chen , Wei-Shung Chen , Yi-Hsun Chung , Chia-Chiuan Chang
发明人： Jui-Lung Chen , Wei-Shung Chen , Yi-Hsun Chung , Chia-Chiuan Chang
IPC分类号： G11C11/00 , G11C5/14
CPC分类号： G11C11/412
摘要： An asymmetric static random access memory (SRAM) device that includes at least one SRAM cell is provided. The SRAM cell includes the first inverter and the second inverter. The first inverter is coupled between a first power and a ground power, and includes a first output terminal coupled to a first node and a first input terminal coupled to a second node. The second inverter is coupled between the first power and the ground power, and includes a second input terminal coupled to the first node and a second output terminal coupled to the second node. When the first inverter and the second inverter receive current from the first power, the SRAM cell is programmed to a predetermined value in advance according to different conductance levels of the first inverter and the second inverter.
摘要翻译：提供了包括至少一个SRAM单元的非对称静态随机存取存储器（SRAM）器件。 SRAM单元包括第一反相器和第二反相器。第一反相器耦合在第一功率和地功率之间，并且包括耦合到第一节点的第一输出端和耦合到第二节点的第一输入端。第二反相器耦合在第一电源和地电之间，并且包括耦合到第一节点的第二输入端和耦合到第二节点的第二输出端。当第一逆变器和第二逆变器从第一功率接收电流时，根据第一逆变器和第二逆变器的不同电导电平，预先将SRAM单元编程为预定值。

7. 发明申请

US20090141534A1 DETECTION APPARATUS AND METHOD FOR SEQUENTIALLY PROGRAMMING MEMORY 审中-公开
标题翻译：用于顺序编程存储器的检测装置和方法
公开(公告)号：US20090141534A1
公开(公告)日：2009-06-04
申请号：US12191129
申请日：2008-08-13
申请人： Chia-Chiuan CHANG , Jui-Lung Chen , Yi-Hsun Chung , Wei-Shung Chen
发明人： Chia-Chiuan CHANG , Jui-Lung Chen , Yi-Hsun Chung , Wei-Shung Chen
IPC分类号： G11C17/16 , G11C7/00 , G11C8/00
CPC分类号： G11C5/143 , G11C8/08 , G11C17/18
摘要： A detection apparatus for sequentially programming a memory is provided. The detection apparatus comprises a current sensor and a programming controller. The current sensor is coupled to a programming source and a memory cell. The current sensor detects change of a programming current between the programming source and the memory cell and generates a control signal according to the detection result. The programming controller is coupled to the current sensor. The programming controller receives the control signal and generates a programming state signal.
摘要翻译：提供了一种用于顺序编程存储器的检测装置。检测装置包括电流传感器和编程控制器。电流传感器耦合到编程源和存储器单元。电流传感器检测编程电源和存储单元之间的编程电流的变化，并根据检测结果生成控制信号。编程控制器耦合到电流传感器。编程控制器接收控制信号并产生编程状态信号。

8. 发明申请

US20050104129A1 Semiconductor programmable device 审中-公开
标题翻译：半导体可编程器件
公开(公告)号：US20050104129A1
公开(公告)日：2005-05-19
申请号：US10817777
申请日：2004-04-02
申请人： Jui-Lung Chen , Yang-Chen Hsu , Chien-Jiun Wang
发明人： Jui-Lung Chen , Yang-Chen Hsu , Chien-Jiun Wang
IPC分类号： H01L27/06 , H01L29/76 , H01L29/94 , H01L31/062
CPC分类号： H01L27/0629
摘要： A semiconductor programmable device is provided. The semiconductor programmable device comprises a P-type substrate, an N-well, an NMOS capacitor and a PMOS transistor. The N-well is formed in the P-type substrate. The NMOS capacitor is configured on the P-type substrate. The PMOS transistor is configured on the N-well. A source/drain of the PMOS transistor is electrically connected to a gate of the NMOS capacitor. A control voltage is applied to a gate of the PMOS transistor. A programming voltage is applied to the source/drain of the PMOS transistor. The programming voltage is large enough to cause a breakdown of a gate oxide layer of the NMOS capacitor. The gate oxide layer of the NMOS capacitor has a thickness identical to the gate oxide layer of the PMOS transistor.
摘要翻译：提供半导体可编程器件。半导体可编程器件包括P型衬底，N阱，NMOS电容器和PMOS晶体管。在P型衬底中形成N阱。 NMOS电容器配置在P型基板上。 PMOS晶体管配置在N阱上。 PMOS晶体管的源极/漏极电连接到NMOS电容器的栅极。控制电压施加到PMOS晶体管的栅极。对PMOS晶体管的源极/漏极施加编程电压。编程电压足够大，导致NMOS电容器的栅极氧化层的击穿。 NMOS电容器的栅极氧化层具有与PMOS晶体管的栅氧化层相同的厚度。

9. 发明授权

US08441306B2 Poly fuse burning system 有权
标题翻译：聚熔丝燃烧系统
公开(公告)号：US08441306B2
公开(公告)日：2013-05-14
申请号：US13047567
申请日：2011-03-14
申请人： Jui-Lung Chen , Tien-Hui Huang , Chieh-Yao Chuang
发明人： Jui-Lung Chen , Tien-Hui Huang , Chieh-Yao Chuang
IPC分类号： H01H37/76 , H01H85/00
CPC分类号： G11C17/16
摘要： This invention provides a poly fuse burning system comprising a poly fuse, a controllable power source supplying power for burning the poly fuse, and a monitor circuit monitoring the burning state of the poly fuse, wherein when a targeted burning state is reached, a control signal is output to shut down the controllable power source to stop the burning.
摘要翻译：本发明提供一种多熔丝燃烧系统，包括多晶硅熔丝，提供用于燃烧多晶硅熔丝的功率的可控电源，以及监控多晶硅熔丝的燃烧状态的监控电路，其中当达到目标燃烧状态时，控制信号输出关闭可控电源以停止燃烧。

10. 发明授权

US07128326B2 Stroller backrest tilting adjusting device 有权
标题翻译：手推车靠背倾斜调节装置
公开(公告)号：US07128326B2
公开(公告)日：2006-10-31
申请号：US10940086
申请日：2004-09-14
申请人： Jui-Lung Chen
发明人： Jui-Lung Chen
IPC分类号： B62B7/06
CPC分类号： B62B9/104 , B62B9/102
摘要： A stroller backrest tilting adjusting device is provided. The stroller backrest tilting adjusting device comprises two supporting straps for supporting the backrest of the stroller, each supporting strap having a fixed end attached to a frame of the stroller and a free end; a strap direction guiding unit allowing the free end of each of the straps to pass therethrough and guiding the straps' direction; and an adjusting assembly fixed to an upper portion of the backrest which is capable of adjusting the effective supporting length of the straps to thereby adjusting the tilting angle of the backrest of the stroller by operating a one-way locking member, which is disposed in the adjusting assembly and has a cam effecting portion for increasingly exerting locking force.
摘要翻译：提供了一种婴儿车靠背倾斜调节装置。婴儿车靠背倾斜调节装置包括用于支撑婴儿车靠背的两个支撑带，每个支撑带具有附接到婴儿车的框架的固定端和自由端; 带状方向引导单元，其允许每个带的自由端穿过并引导带的方向; 以及固定到靠背上部的调节组件，其能够调节带的有效支撑长度，从而通过操作单向锁定构件来调节婴儿车靠背的倾斜角度，该单向锁定构件设置在并且具有用于越来越多地施加锁定力的凸轮效果部分。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式