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1. 发明授权

US06234876B1 Chemical-mechanical polish machines and fabrication process using the same 有权
公开(公告)号：US06234876B1
公开(公告)日：2001-05-22
申请号：US09425454
申请日：1999-10-22
申请人： Juen-Kuen Lin , Chien-Hsin Lai , Peng-Yih Peng , Kun-Lin Wu , Daniel Chiu , Chih-Chiang Yang , Juan-Yuan Wu , Hao-Kuang Chiu
发明人： Juen-Kuen Lin , Chien-Hsin Lai , Peng-Yih Peng , Kun-Lin Wu , Daniel Chiu , Chih-Chiang Yang , Juan-Yuan Wu , Hao-Kuang Chiu
IPC分类号： B24B100
CPC分类号： B24B37/32 , B24B37/042 , B24B57/02
摘要： A chemical mechanical polishing machine and a fabrication process using the same. The chemical mechanical polishing machine comprises a retainer ring having a plurality of slurry passages at the bottom of the retainer ring. The retainer ring further comprises a circular path. By conducting the slurry through the slurry passages and the circular, a wafer is planarized within the chemical mechanical polishing machine.

2. 发明授权

US06183350B2 Chemical-mechanical polish machines and fabrication process using the same 有权
标题翻译：化学机械抛光机及其制作工艺使用相同
公开(公告)号：US06183350B2
公开(公告)日：2001-02-06
申请号：US09425130
申请日：1999-10-22
申请人： Juen-Kuen Lin , Chien-Hsin Lai , Peng-Yih Peng , Kun-Lin Wu , Daniel Chiu , Chih-Chiang Yang , Juan-Yuan Wu , Hao-Kuang Chiu
发明人： Juen-Kuen Lin , Chien-Hsin Lai , Peng-Yih Peng , Kun-Lin Wu , Daniel Chiu , Chih-Chiang Yang , Juan-Yuan Wu , Hao-Kuang Chiu
IPC分类号： B24B100
CPC分类号： B24B37/32 , B24B37/042 , B24B57/02
摘要： A chemical mechanical polishing machine and a fabrication process using the same. The chemical mechanical polishing machine comprises a retainer ring having a plurality of slurry passages at the bottom of the retainer ring. The retainer ring further comprises a circular path. By conducting the slurry through the slurry passages and the circular, a wafer is planarized within the chemical mechanical polishing machine.
摘要翻译：化学机械抛光机及其制造方法。化学机械抛光机包括在保持环的底部具有多个浆料通道的保持环。保持环还包括圆形路径。通过将浆料通过浆料通道和圆形管，在化学机械抛光机内将晶片平坦化。

3. 发明授权

US06241582B1 Chemical mechanical polish machines and fabrication process using the same 有权
标题翻译：化学机械抛光机和制造工艺使用相同
公开(公告)号：US06241582B1
公开(公告)日：2001-06-05
申请号：US09157041
申请日：1998-09-18
申请人： Juen-Kuen Lin , Chien-Hsin Lai , Peng-Yih Peng , Kun-Lin Wu , Daniel Chiu , Chih-Chiang Yang , Juan-Yuan Wu , Hao-Kuang Chiu
发明人： Juen-Kuen Lin , Chien-Hsin Lai , Peng-Yih Peng , Kun-Lin Wu , Daniel Chiu , Chih-Chiang Yang , Juan-Yuan Wu , Hao-Kuang Chiu
IPC分类号： B24B100
CPC分类号： B24B37/32 , B24B37/042 , B24B57/02
摘要： A chemical mechanical polishing machine and a fabrication process using the same. The chemical mechanical polishing machine comprises a retainer ring having a plurality of slurry passages at the bottom of the retainer ring. The retainer ring further comprises a circular path. By conducting the slurry through the slurry passages and the circular, a wafer is planarized within the chemical mechanical polishing machine.
摘要翻译：化学机械抛光机及其制造方法。化学机械抛光机包括在保持环的底部具有多个浆料通道的保持环。保持环还包括圆形路径。通过将浆料通过浆料通道和圆形管，在化学机械抛光机内将晶片平坦化。

4. 发明授权

US06293850B1 Chemical-mechanical polish machines and fabrication process using the same 有权
公开(公告)号：US06293850B1
公开(公告)日：2001-09-25
申请号：US09426937
申请日：1999-10-22
申请人： Juen-Kuen Lin , Chien-Hsin Lai , Peng-Yih Peng , Kun-Lin Wu , Daniel Chiu , Chih-Chiang Yang , Juan-Yuan Wu , Hao-Kuang Chiu
发明人： Juen-Kuen Lin , Chien-Hsin Lai , Peng-Yih Peng , Kun-Lin Wu , Daniel Chiu , Chih-Chiang Yang , Juan-Yuan Wu , Hao-Kuang Chiu
IPC分类号： B24B100
CPC分类号： B24B37/32 , B24B37/042 , B24B57/02
摘要： A chemical mechanical polishing machine and a fabrication process using the same. The chemical mechanical polishing machine comprises a retainer ring having a plurality of slurry passages at the bottom of the retainer ring. The retainer ring further comprises a circular path. By conducting the slurry through the slurry passages and the circular, a wafer is planarized within the chemical mechanical polishing machine.

5. 发明授权

US06280079B1 Method of mixing slurries 有权
标题翻译：混合浆料的方法
公开(公告)号：US06280079B1
公开(公告)日：2001-08-28
申请号：US09220535
申请日：1998-12-24
申请人： Ming-Sheng Yang , Peng-Yih Peng , Chia-Jui Chang , Juan-Yuan Wu
发明人： Ming-Sheng Yang , Peng-Yih Peng , Chia-Jui Chang , Juan-Yuan Wu
IPC分类号： B01F500
CPC分类号： B24B37/04 , B01F7/00916 , B24B57/02
摘要： A slurry mixing apparatus has a mixing chamber, a rotatable bearing and several blades. The bearing is connected to one end of each of the blades and located in the center of the mixing chamber. Several kinds of the slurries can be mixed rapidly in the apparatus and flowed into the CMP polisher immediately to perform a CMP process. Being mixed by the mixing chamber, the slurry is supplied to the chemical mechanical polisher for polishing.
摘要翻译：浆料混合装置具有混合室，可旋转轴承和多个叶片。轴承连接到每个叶片的一端并且位于混合室的中心。几种浆料可以在设备中快速混合，并立即流入CMP抛光机，以执行CMP工艺。通过混合室混合，将浆料供给到化学机械抛光机进行抛光。

6. 发明授权

US5993647A Circulation system of slurry 失效
标题翻译：浆料循环系统
公开(公告)号：US5993647A
公开(公告)日：1999-11-30
申请号：US112996
申请日：1998-07-10
申请人： Chao-Yuan Huang , Peng-Yih Peng , Juan-Yuan Wu
发明人： Chao-Yuan Huang , Peng-Yih Peng , Juan-Yuan Wu
IPC分类号： B24B37/04 , B24B55/12 , B24B57/02 , B01D17/12 , B34B1/00
CPC分类号： B24B55/12 , B24B37/04 , B24B57/02 , Y10T137/85978
摘要： A slurry filtration system for supplying a slurry to a polisher to perform a chemical mechanical polishing process. The system comprises a first three-way valve, to receive the slurry supplied from an external system; a slurry pump, to control the slurry flowing from the first three-way valve, and to maintain a circulating state of the slurry within the circulating system after the chemical mechanical polishing process comes to a stop; a slurry filter, to filter a plurality of large size particles in the slurry pumped from the slurry pump; a second three-way valve, to supply the slurry flowing from the filter to the polisher; and a transportation pipe, connecting between the first and the second three-way valves to transport the slurry from the second three-way valve back to the first three-way valve when the polishing process has stopped.
摘要翻译：一种浆料过滤系统，用于将浆料供应到抛光机以进行化学机械抛光工艺。该系统包括第一三通阀，以接收从外部系统供应的浆料; 浆料泵，用于控制从第一三通阀流出的浆料，并且在化学机械抛光处理停止之后保持浆料在循环系统内的循环状态; 浆料过滤器，用于过滤从浆料泵泵送的浆料中的多个大粒子; 第二三通阀，用于供应从过滤器流到抛光机的浆料; 以及输送管，其连接在第一和第二三通阀之间，以在抛光处理停止时将浆料从第二三通阀返回到第一三通阀。

7. 发明授权

US6036356A In-situ slurry mixing apparatus 失效
标题翻译：原位浆料混合装置
公开(公告)号：US6036356A
公开(公告)日：2000-03-14
申请号：US220147
申请日：1998-12-23
申请人： Ming-Sheng Yang , Chien-Hsin Lai , Chia-Jui Chang , Juan-Yuan Wu
发明人： Ming-Sheng Yang , Chien-Hsin Lai , Chia-Jui Chang , Juan-Yuan Wu
IPC分类号： B01F5/06 , B24B37/04 , B24B57/02 , H01L21/306 , B01F5/00
CPC分类号： B24B37/04 , B01F5/061 , B01F5/0646 , B24B57/02 , H01L21/30625
摘要： An in-situ CMP slurry mixing apparatus. The apparatus comprises a tubular main body and a plurality of tapered plugs. The tubular main body further comprises a plurality of first tubes with a first diameter, a plurality of second tubes with a second diameter. Each tapered plug is placed in each second tube, the tips of each tapered plug are pointed in the same direction, and the tips are each oriented opposite to a flowing direction of a CMP slurry. In addition, the second diameter is larger than the first diameter, and a diameter of the base of each tapered plug is larger than the first diameter but is smaller than the second diameter.
摘要翻译：原位CMP浆料混合装置。该装置包括管状主体和多个锥形塞。管状主体还包括具有第一直径的多个第一管，具有第二直径的多个第二管。每个锥形塞被放置在每个第二管中，每个锥形塞的尖端指向相同的方向，并且尖端各自定向成与CMP浆料的流动方向相反。此外，第二直径大于第一直径，并且每个锥形塞的基部的直径大于第一直径但小于第二直径。

8. 发明授权

US08062536B2 High density plasma chemical vapor deposition process 有权
标题翻译：高密度等离子体化学气相沉积工艺
公开(公告)号：US08062536B2
公开(公告)日：2011-11-22
申请号：US12729234
申请日：2010-03-22
申请人： Chih-Chien Liu , Ta-Shan Tseng , Wen-Bin Shieh , Juan-Yuan Wu , Water Lur , Shih-Wei Sun
发明人： Chih-Chien Liu , Ta-Shan Tseng , Wen-Bin Shieh , Juan-Yuan Wu , Water Lur , Shih-Wei Sun
IPC分类号： H01L21/467 , H01L21/32 , H01L21/308 , H01L21/762
CPC分类号： H01L21/02112 , H01L21/02164 , H01L21/02274 , H01L21/0276 , H01L21/31612 , H01L21/32136 , H01L21/32139 , H01L21/76834 , H01L21/76837 , H01L21/76838
摘要： A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the formation of a cap layer and the formation of gaps into which high density plasma chemical vapor deposition (HDPCVD) dielectric material is deposited. First and second antireflective coatings may be formed on the wiring line layer, the first and second antireflective coatings being made from different materials. Both antireflective coatings and the wiring line layer are etched through to form wiring lines separated by gaps. The gaps between wiring lines may be filled using high density plasma chemical vapor deposition.
摘要翻译：在形成半导体器件时，将介电材料沉积在布线之间的间隙中的方法包括形成盖层并形成间隙，沉积高密度等离子体化学气相沉积（HDPCVD）电介质材料。第一和第二抗反射涂层可以形成在布线层上，第一和第二抗反射涂层由不同的材料制成。防反射涂层和布线层都被蚀刻通过以形成由间隙分开的布线。可以使用高密度等离子体化学气相沉积来填充布线之间的间隙。

9. 发明申请

US20060009005A1 CHEMICAL MECHANICAL POLISHING FOR FORMING A SHALLOW TRENCH ISOLATION STRUCTURE 有权
标题翻译：用于形成浅层隔离结构的化学机械抛光
公开(公告)号：US20060009005A1
公开(公告)日：2006-01-12
申请号：US10984045
申请日：2004-11-09
申请人： Coming Chen , Juan-Yuan Wu , Water Lur
发明人： Coming Chen , Juan-Yuan Wu , Water Lur
IPC分类号： H01L21/76 , H01L21/302
CPC分类号： H01L21/31144 , H01L21/31053 , H01L21/31056 , H01L21/76229 , Y10S438/942
摘要： A method of chemical-mechanical polishing for forming a shallow trench isolation is disclosed. A substrate having a number of active regions, including a number of relatively large active regions and a number of relatively small active regions, is provided. The method comprises the following steps. A silicon nitride layer on the substrate is first formed. A number of shallow trenches are formed between the active regions. An oxide layer is formed over the substrate, so that the shallow trenches are filled with the oxide layer. A partial reverse active mask is formed on the oxide layer. The partial reverse active mask has an opening at a central part of each relatively large active region. The opening exposes a portion of the oxide layer. The opening has at least a dummy pattern. The oxide layer on the central part of each large active region is removed to expose the silicon nitride layer. The partial reverse active mask is removed. The oxide layer is planarized to expose the silicon nitride layer.
摘要翻译：公开了用于形成浅沟槽隔离的化学机械抛光的方法。提供具有多个有源区的基板，包括多个相对较大的有源区和多个相对小的有源区。该方法包括以下步骤。首先形成衬底上的氮化硅层。在活性区域之间形成多个浅沟槽。在衬底上形成氧化物层，使得浅沟槽被氧化物层填充。在氧化物层上形成部分反向有源掩模。部分反向有源掩模在每个相对大的有效区域的中心部分具有开口。开口暴露氧化物层的一部分。开口至少有一个虚拟图案。去除每个大的有源区的中心部分的氧化物层，以露出氮化硅层。去除部分反向主动掩模。将氧化物层平坦化以暴露氮化硅层。

10. 发明授权

US06810511B2 Method of designing active region pattern with shift dummy pattern 有权
标题翻译：用移动虚拟图案设计有源区域图案的方法
公开(公告)号：US06810511B2
公开(公告)日：2004-10-26
申请号：US10284683
申请日：2002-10-30
申请人： Coming Chen , Juan-Yuan Wu , Water Lur
发明人： Coming Chen , Juan-Yuan Wu , Water Lur
IPC分类号： G06F1750
CPC分类号： H01L21/31053 , H01L21/76229 , H01L23/528 , H01L27/0207 , H01L2924/0002 , H01L2924/00
摘要： A method of designing an active region pattern with a shifted dummy pattern, wherein an integrated circuit having an original active region pattern thereon is provided. The original active region pattern is expanded with a first parameter of line width to obtain a first pattern. By subtracting the first pattern, a second pattern is obtained. A dummy pattern which comprises an array of a plurality of elements is provided. By shifting the elements, a shifted dummy pattern is obtained. The second pattern and the shifted dummy pattern are combined, so that an overlapped region thereof is extracted as a combined dummy pattern. The combined dummy pattern is expanded with a second parameter of line width, so that a resultant dummy pattern is obtained. The resultant dummy pattern is added to the first pattern, so that the active region pattern with a shifted dummy pattern is obtained.
摘要翻译：一种设计具有偏移的虚设图案的有源区域图案的方法，其中提供其上具有原始有源区域图案的集成电路。原始活动区域图案用线宽的第一参数展开以获得第一图案。通过减去第一图案，获得第二图案。提供了包括多个元件的阵列的虚拟图案。通过移动元件，获得移动的虚拟图案。第二图案和移位的虚拟图案被组合，使得其重叠区域被提取为组合的虚拟图案。组合的虚拟图案用线宽的第二参数扩展，从而获得合成的虚拟图案。将所得到的虚拟图案添加到第一图案，从而获得具有偏移的虚设图案的有源区域图案。

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