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    • 6. 发明授权
    • Method of cutting a wafer
    • 切割晶片的方法
    • US07863161B2
    • 2011-01-04
    • US12138646
    • 2008-06-13
    • Dae-Sang ChanJun-Young KoWha-Su SinJae-Yong Park
    • Dae-Sang ChanJun-Young KoWha-Su SinJae-Yong Park
    • H01L21/00
    • H01L21/78
    • In a method of cutting a wafer, a supporting member is attached to an upper surface of the wafer on which semiconductor chips are formed. An opening is formed at a lower surface of the wafer along a scribe lane of the wafer. The lower surface of the wafer may be plasma-etched to reduce a thickness of the wafer. A tensile tape may be attached to the lower surface of the wafer. Here, the tensile tape includes sequentially stacked tensile films having different tensile modules. The supporting member is then removed. The tensile tape is cooled to increase the tensile modules between the tensile films. The tensile tape is tensed until the tensile films are cut using the tensile modules difference to separate the tensile tape from the semiconductor chips. Thus, the lower surface of the wafer may be plasma-etched without using an etching mask.
    • 在切割晶片的方法中,支撑构件附接到其上形成有半导体芯片的晶片的上表面。 在晶片的下表面沿着晶片的划线通道形成开口。 可以等离子体蚀刻晶片的下表面以减小晶片的厚度。 拉伸带可以附接到晶片的下表面。 这里,拉伸带包括具有不同拉伸模块的顺序堆叠的拉伸膜。 然后移除支撑构件。 拉伸带被冷却以增加拉伸膜之间的拉伸模块。 将拉伸带拉紧直到使用拉伸模块差来切割拉伸膜,以将拉伸带与半导体芯片分离。 因此,可以不使用蚀刻掩模来等离子体蚀刻晶片的下表面。
    • 8. 发明申请
    • METHOD OF CUTTING A WAFER
    • 切割方法
    • US20080311727A1
    • 2008-12-18
    • US12138646
    • 2008-06-13
    • Dae-Sang CHANJun-Young KoWha-Su SinJae-Yong Park
    • Dae-Sang CHANJun-Young KoWha-Su SinJae-Yong Park
    • H01L21/302
    • H01L21/78
    • In a method of cutting a wafer, a supporting member is attached to an upper surface of the wafer on which semiconductor chips are formed. An opening is formed at a lower surface of the wafer along a scribe lane of the wafer. The lower surface of the wafer may be plasma-etched to reduce a thickness of the wafer. A tensile tape may be attached to the lower surface of the wafer. Here, the tensile tape includes sequentially stacked tensile films having different tensile modules. The supporting member is then removed. The tensile tape is cooled to increase the tensile modules between the tensile films. The tensile tape is tensed until the tensile films are cut using the tensile modules difference to separate the tensile tape from the semiconductor chips. Thus, the lower surface of the wafer may be plasma-etched without using an etching mask.
    • 在切割晶片的方法中,支撑构件附接到其上形成有半导体芯片的晶片的上表面。 在晶片的下表面沿着晶片的划线通道形成开口。 可以等离子体蚀刻晶片的下表面以减小晶片的厚度。 拉伸带可以附接到晶片的下表面。 这里,拉伸带包括具有不同拉伸模块的顺序堆叠的拉伸膜。 然后移除支撑构件。 拉伸带被冷却以增加拉伸膜之间的拉伸模块。 将拉伸带拉紧直到使用拉伸模块差来切割拉伸膜,以将拉伸带与半导体芯片分离。 因此,可以不使用蚀刻掩模来等离子体蚀刻晶片的下表面。