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1. 发明授权

US08841540B2 High temperature thermoelectrics 有权
标题翻译：高温热电
公开(公告)号：US08841540B2
公开(公告)日：2014-09-23
申请号：US13197260
申请日：2011-08-03
申请人： Joshua E. Moczygemba , James L. Bierschenk , Jeffrey W. Sharp
发明人： Joshua E. Moczygemba , James L. Bierschenk , Jeffrey W. Sharp
IPC分类号： H01L35/08 , H01L35/04 , B23K11/11 , B23K11/16 , H01L35/18 , B23K26/22 , B23K1/00
CPC分类号： H01L35/08 , B23K1/00 , B23K1/0008 , B23K1/0016 , B23K11/115 , B23K11/16 , B23K26/22 , B23K2101/38 , B23K2101/40 , H01L35/04 , H01L35/18 , H01L35/20 , H01L35/32 , H01L35/34
摘要： In accordance with one embodiment of the present disclosure, a thermoelectric device includes a plurality of thermoelectric elements that each include a diffusion barrier. The diffusion barrier includes a refractory metal. The thermoelectric device also includes a plurality of conductors coupled to the plurality of thermoelectric elements. The plurality of conductors include aluminum. In addition, the thermoelectric device includes at least one plate coupled to the plurality of thermoelectric elements using a braze. The braze includes aluminum.
摘要翻译：根据本公开的一个实施例，热电装置包括各自包括扩散阻挡层的多个热电元件。扩散阻挡层包括难熔金属。该热电装置还包括耦合到多个热电元件的多个导体。多个导体包括铝。此外，热电装置包括使用钎焊件耦合到多个热电元件的至少一个板。钎焊包括铝。

2. 发明申请

US20130032189A1 High Temperature Thermoelectrics 有权
公开(公告)号：US20130032189A1
公开(公告)日：2013-02-07
申请号：US13197260
申请日：2011-08-03
申请人： Joshua E. Moczygemba , James L. Bierschenk , Jeffrey W. Sharp
发明人： Joshua E. Moczygemba , James L. Bierschenk , Jeffrey W. Sharp
IPC分类号： H01L35/32 , B23K1/20 , B23K11/16 , H01L35/34
CPC分类号： H01L35/08 , B23K1/00 , B23K1/0008 , B23K1/0016 , B23K11/115 , B23K11/16 , B23K26/22 , B23K2101/38 , B23K2101/40 , H01L35/04 , H01L35/18 , H01L35/20 , H01L35/32 , H01L35/34
摘要： In accordance with one embodiment of the present disclosure, a thermoelectric device includes a plurality of thermoelectric elements that each include a diffusion barrier. The diffusion barrier includes a refractory metal. The thermoelectric device also includes a plurality of conductors coupled to the plurality of thermoelectric elements. The plurality of conductors include aluminum. In addition, the thermoelectric device includes at least one plate coupled to the plurality of thermoelectric elements using a braze. The braze includes aluminum.

3. 发明授权

US07619158B2 Thermoelectric device having P-type and N-type materials 失效
标题翻译：具有P型和N型材料的热电装置
公开(公告)号：US07619158B2
公开(公告)日：2009-11-17
申请号：US10897871
申请日：2004-07-22
申请人： Jeffrey W. Sharp , James L. Bierschenk , Joshua E. Moczygemba
发明人： Jeffrey W. Sharp , James L. Bierschenk , Joshua E. Moczygemba
IPC分类号： H01L35/34 , H01L21/00
CPC分类号： H01L35/34
摘要： A method of forming a thermoelectric device includes extruding a P/N-type billet to form a P/N-type extrusion having a first plurality of P-type regions and a first plurality of N-type regions. The P/N-type extrusion is sliced into a plurality of P/N-type wafers. A diffusion barrier metallization is applied to at least a subset of the P-type regions and N-type regions. One side of at least one P/N-type wafer is attached to a temporary substrate. The P/N-type regions of the P/N-type wafer are separated into an array of isolated P-type and N-type elements. The array of elements are coupled to a first plate having a first patterned metallization to form a thermoelectric circuit. The temporary substrate and bonding media may be detached from the P-type and N-type elements. The thermoelectric circuit may be coupled with a second plate at a second end of the thermoelectric circuit, second plate having a second patterned metallization.
摘要翻译：形成热电装置的方法包括挤出P / N型坯料以形成具有第一多个P型区域和第一多个N型区域的P / N型挤出物。将P / N型挤出机切成多个P / N型晶片。扩散阻挡金属化被施加到P型区域和N型区域的至少一个子集。至少一个P / N型晶片的一侧附接到临时衬底。 P / N型晶片的P / N型区域分离成分离的P型和N型元件的阵列。元件阵列耦合到具有第一图案化金属化的第一板以形成热电电路。临时衬底和接合介质可以从P型和N型元件分离。热电电路可以在热电电路的第二端处与第二板耦合，第二板具有第二图案化金属化。

4. 发明授权

US07763792B2 Multistage heat pumps and method of manufacture 失效
标题翻译：多级热泵及其制造方法
公开(公告)号：US07763792B2
公开(公告)日：2010-07-27
申请号：US11058029
申请日：2005-02-14
申请人： Jeffrey W. Sharp , James L. Bierschenk
发明人： Jeffrey W. Sharp , James L. Bierschenk
IPC分类号： H01L35/28
CPC分类号： H01L35/32 , H01L23/38 , H01L35/325 , H01L2224/48091 , H01L2924/00014
摘要： A thermoelectric module is provided that includes a first thermally conductive plate with a first array of thermoelectric elements coupled to it. The first array of thermoelectric elements includes a first plurality of thermoelectric elements. The thermoelectric module also includes a second thermally conductive plate coupled to the first array of thermoelectric elements, and a second array of thermoelectric elements coupled to the second plate. The second array of thermoelectric elements includes a second plurality of thermoelectric elements. A third thermally conductive plate is coupled to the second array of thermoelectric elements. The thermoelectric module also includes a portion of each thermoelectric element of the first and second pluralities of thermoelectric elements being coplanar with at least a portion of every other thermoelectric element of the first and second pluralities of thermoelectric elements.
摘要翻译：提供了一种热电模块，其包括具有与其耦合的第一热电元件阵列的第一导热板。第一热电元件阵列包括第一多个热电元件。热电模块还包括耦合到第一热电元件阵列的第二导热板和耦合到第二板的第二热电元件阵列。第二热电元件阵列包括第二多个热电元件。第三导热板耦合到第二热电元件阵列。热电模块还包括第一和第二多个热电元件的每个热电元件的一部分与第一和第二多个热电元件的每隔一个热电元件的至少一部分共面。

5. 发明授权

US5330610A Method of digital epilaxy by externally controlled closed-loop feedback 失效
标题翻译：通过外部控制闭环反馈的数字外切方法
公开(公告)号：US5330610A
公开(公告)日：1994-07-19
申请号：US68027
申请日：1993-05-28
申请人： Djula Eres , Jeffrey W. Sharp
发明人： Djula Eres , Jeffrey W. Sharp
IPC分类号： C30B25/02 , C30B25/14
CPC分类号： C30B25/14 , C30B25/02
摘要： A method and apparatus for digital epitaxy. The apparatus includes a pulsed gas delivery assembly that supplies gaseous material to a substrate to form an adsorption layer of the gaseous material on the substrate. Structure is provided for measuring the isothermal desorption spectrum of the growth surface to monitor the active sites which are available for adsorption. The vacuum chamber housing the substrate facilitates evacuation of the gaseous material from the area adjacent the substrate following exposure. In use, digital epitaxy is achieved by exposing a substrate to a pulse of gaseous material to form an adsorption layer of the material on the substrate. The active sites on the substrate are monitored during the formation of the adsorption layer to determine if all the active sites have been filled. Once the active sites have been filled on the growth surface of the substrate, the pulse of gaseous material is terminated. The unreacted portion of the gas pulse is evacuated by continuous pumping. Subsequently, a second pulse is applied when availability of active sites is determined by studying the isothermal desorption spectrum. These steps are repeated until a thin film of sufficient thickness is produced.
摘要翻译：一种用于数字外延的方法和装置。该装置包括脉冲气体输送组件，其将气态材料供应到基底以在基底上形成气态材料的吸附层。提供了用于测量生长表面的等温解吸光谱以监测可用于吸附的活性位点的结构。容纳衬底的真空室有助于从曝光后邻近衬底的区域排出气态材料。在使用中，通过将衬底暴露于气体材料的脉冲以在衬底上形成材料的吸附层来实现数字外延。在形成吸附层期间监测底物上的活性位点，以确定所有的活性位点是否已被填充。一旦活性位点已经填充在基底的生长表面上，则气态材料的脉冲终止。通过连续泵送将气体脉冲的未反应部分排出。随后，当通过研究等温解吸谱确定活性位点的可用性时，施加第二脉冲。重复这些步骤，直到产生足够厚度的薄膜。

6. 发明授权

US06399871B1 Thermoelectric materials: ternary penta telluride and selenide compounds 失效
公开(公告)号：US06399871B1
公开(公告)日：2002-06-04
申请号：US09751864
申请日：2000-12-29
申请人： Jeffrey W. Sharp
发明人： Jeffrey W. Sharp
IPC分类号： H01L3500
CPC分类号： H01L35/22 , H01L35/16
摘要： Ternary tellurium compounds and ternary selenium compounds may be used in fabricating thermoelectric devices with a thermoelectric figure of merit (ZT) of 1.5 or greater. Examples of such compounds include Tl2SnTe5, Tl2GeTe5, K2SnTe5 and Rb2SnTe5. These compounds have similar types of crystal lattice structures which include a first substructure with a (Sn, Ge) Te5 composition and a second substructure with chains of selected cation atoms. The second substructure includes selected cation atoms which interact with selected anion atoms to maintain a desired separation between the chains of the first substructure. The cation atoms which maintain the desired separation between the chains occupy relatively large electropositive sites in the resulting crystal lattice structure which results in a relatively low value for the lattice component of thermal conductivity (&kgr;g). The first substructure of anion chains indicates significant anisotropy in the thermoelectric characteristics of the resulting semiconductor materials.

7. 发明授权

US06660925B1 Thermoelectric device having co-extruded P-type and N-type materials 失效
标题翻译：具有共挤出P型和N型材料的热电装置
公开(公告)号：US06660925B1
公开(公告)日：2003-12-09
申请号：US09872394
申请日：2001-06-01
申请人： Jeffrey W. Sharp
发明人： Jeffrey W. Sharp
IPC分类号： H01L3534
CPC分类号： H01L35/34
摘要： A method of forming thermoelectric materials includes combining at least one P-type extrusion with at least one N-type extrusion to form a first P/N-type billet. The P/N-type billet may be extruded to form a first P/N-type extrusion having at least one P-type region, and at least one N-type region. The P/N-type extrusion may be segmented into a plurality of P/N-type extrusion segments. In a particular embodiment, a plurality of the P/N-type extrusion segments may be combined to form a second P/N-type billet. The second P/N-type billet may be extruded to form a second P/N-type extrusion having a second plurality of P-type regions and a second plurality of N-type regions.
摘要翻译：形成热电材料的方法包括将至少一个P型挤压与至少一个N型挤压组合以形成第一P / N型坯料。可以将P / N型坯料挤出以形成具有至少一个P型区域和至少一个N型区域的第一P / N型挤出物。 P / N型挤出可以分段成多个P / N型挤压段。在一个具体的实施方案中，多个P / N型挤压段可以组合以形成第二P / N型坯料。可以将第二P / N型坯料挤出以形成具有第二多个P型区域和第二多个N型区域的第二P / N型挤出机。

8. 发明授权

US06169245A Thermoelectric materials ternary penta telluride and selenide compounds 失效
标题翻译：热电材料三元五碲化物和硒化合物
公开(公告)号：US06169245A
公开(公告)日：2001-01-02
申请号：US09305111
申请日：1999-05-04
申请人： Jeffrey W. Sharp
发明人： Jeffrey W. Sharp
IPC分类号： H01L3530
CPC分类号： H01L35/22 , H01L35/16
摘要： Ternary tellurium compounds and ternary selenium compounds may be used in fabricating thermoelectric devices with a thermoelectric figure of merit (ZT) of 1.5 or greater. Examples of such compounds include Tl2SnTe5, Tl2GeTe5, K2SnTe5 and Rb2SnTe5. These compounds have similar types of crystal lattice structures which include a first substructure with a (Sn, Ge) Te5 composition and a second substructure with chains of selected cation atoms. The second substructure includes selected cation atoms which interact with selected anion atoms to maintain a desired separation between the chains of the first substructure. The cation atoms which maintain the desired separation between the chains occupy relatively large electropositive sites in the resulting crystal lattice structure which results in a relatively low value for the lattice component of thermal conductivity (&kgr;g). The first substructure of anion chains indicates significant anisotropy in the thermoelectric characteristics of the resulting semiconductor materials.
摘要翻译：三元碲化合物和三元硒化合物可用于制造具有1.5或更高的热电品质因数（ZT）的热电器件。这些化合物的实例包括Tl2SnTe5，Tl2GeTe5，K2SnTe5和Rb2SnTe5。这些化合物具有相似类型的晶格结构，其包括具有（Sn，Ge）Te5组合物的第一子结构和具有所选阳离子原子链的第二子结构。第二子结构包括选择的阳离子原子，其与选定的阴离子原子相互作用以保持第一子结构的链之间的期望的分离。在所得晶格结构中，保持链之间所需分离的阳离子原子占据相对较大的正电位，导致热导率（kappag）的晶格分量相对较低的值。阴离子链的第一个子结构表示所得半导体材料的热电特性的显着的各向异性。

9. 发明授权

US5540783A Apparatus for externally controlled closed-loop feedback digital epitaxy 失效
标题翻译：外部控制闭环反馈数字外延装置
公开(公告)号：US5540783A
公开(公告)日：1996-07-30
申请号：US249597
申请日：1994-05-26
申请人： Djula Eres , Jeffrey W. Sharp
发明人： Djula Eres , Jeffrey W. Sharp
IPC分类号： C30B25/02 , C30B25/14 , C23C16/00
CPC分类号： C30B25/14 , C30B25/02
摘要： A method and apparatus for digital epitaxy. The apparatus includes a pulsed gas delivery assembly that supplies gaseous material to a substrate to form an adsorption layer of the gaseous material on the substrate. Structure is provided for measuring the isothermal desorption spectrum of the growth surface to monitor the active sites which are available for adsorption. The vacuum chamber housing the substrate facilitates evacuation of the gaseous material from the area adjacent the substrate following exposure. In use, digital epitaxy is achieved by exposing a substrate to a pulse of gaseous material to form an adsorption layer of the material on the substrate. The active sites on the substrate are monitored during the formation of the adsorption layer to determine if all the active sites have been filled. Once the active sites have been filled on the growth surface of the substrate, the pulse of gaseous material is terminated. The unreacted portion of the gas pulse is evacuated by continuous pumping. Subsequently, a second pulse is applied when availability of active sites is determined by studying the isothermal desorption spectrum. These steps are repeated until a thin film of sufficient thickness is produced.
摘要翻译：一种用于数字外延的方法和装置。该装置包括脉冲气体输送组件，其将气态材料供应到基底以在基底上形成气态材料的吸附层。提供了用于测量生长表面的等温解吸光谱以监测可用于吸附的活性位点的结构。容纳衬底的真空室有助于从曝光后邻近衬底的区域排出气态材料。在使用中，通过将衬底暴露于气态材料的脉冲以在衬底上形成材料的吸附层来实现数字外延。在形成吸附层期间监测底物上的活性位点，以确定所有的活性位点是否已被填充。一旦活性位点已经填充在基底的生长表面上，则气态材料的脉冲终止。通过连续泵送将气体脉冲的未反应部分排出。随后，当通过研究等温解吸谱确定活性位点的可用性时，施加第二脉冲。重复这些步骤，直到产生足够厚度的薄膜。

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