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1. 发明授权

US5679969A Ferroelectric based capacitor for use in memory systems and method for fabricating the same 失效
标题翻译：用于存储器系统的铁电电容器及其制造方法
公开(公告)号：US5679969A
公开(公告)日：1997-10-21
申请号：US661597
申请日：1996-06-11
申请人： Joseph T. Evans, Jr. , Richard H. Womack
发明人： Joseph T. Evans, Jr. , Richard H. Womack
IPC分类号： H01L21/02 , H01L21/8246 , H01L27/115 , H01L29/92 , H01L27/108 , H01L29/76 , H01L29/94 , H01L31/62
CPC分类号： H01L27/11502 , H01L27/11585 , H01L27/1159 , H01L28/55 , H01L28/60 , H01L28/75
摘要： A ferroelectric based capacitor structure and method for making the same. The capacitor includes a bottom electrode having a layer of Pt in contact with a first layer of an ohmic material. The capacitor dielectric is constructed from a layer of lead zirconium titanate doped with an element having an oxidation state greater than +4. The top electrode of the capacitor is constructed from a second layer of ohmic material in contact with a layer of Pt. The preferred ohmic material is LSCO; although RuO.sub.2 may also be utilized. The capacitor is preferably constructed over the drain of an FET such that the bottom electrode of the capacitor is connected to the drain of the FET. The resulting capacitor structure has both low imprint and low fatigue.
摘要翻译：一种铁电体电容器结构及其制造方法。电容器包括具有与第一欧姆材料层接触的Pt层的底部电极。电容器电介质由掺杂有大于+4的氧化态的元素的钛酸铅锆层构成。电容器的顶部电极由与Pt层接触的第二层欧姆材料构成。优选的欧姆材料是LSCO; 尽管也可以使用RuO 2。电容器优选地构造在FET的漏极上，使得电容器的底部电极连接到FET的漏极。所得到的电容器结构具有低压印和低疲劳。

2. 发明授权

US08018754B1 Non-volatile memory circuit using ferroelectric capacitor storage element 失效
公开(公告)号：US08018754B1
公开(公告)日：2011-09-13
申请号：US07582672
申请日：1990-09-14
申请人： Joseph T. Evans, Jr. , William D. Miller , Richard H. Womack
发明人： Joseph T. Evans, Jr. , William D. Miller , Richard H. Womack
IPC分类号： G11C7/00 , G11C11/22
CPC分类号： G11C11/22 , G11C11/5657
摘要： A non-volatile memory cell and related system utilize ferroelectric capacitors as data storage elements. Circuitry is provided for writing to a single ferroelectric capacitor storage element, as well as to dual storage elements operating inversely. The storage elements are read by use of a sense amplifier in a configuration which automatically restores the original data states, thereby eliminating the need for a subsequent restore operation. Memory systems are described which include circuitry for driving bit lines, word lines and drive lines to accomplish both the write and read operations.

3. 发明授权

US5892255A Ferroelectric based capacitor for use in memory systems and method for fabricating the same 失效
标题翻译：用于存储器系统的铁电电容器及其制造方法
公开(公告)号：US5892255A
公开(公告)日：1999-04-06
申请号：US946749
申请日：1997-10-12
申请人： Joseph T. Evans, Jr. , Richard H. Womack
发明人： Joseph T. Evans, Jr. , Richard H. Womack
IPC分类号： H01L21/02 , H01L21/8246 , H01L29/92 , H01L27/108 , H01L29/76 , H01L29/94 , H01L31/62
CPC分类号： H01L27/1159 , H01L27/11585 , H01L28/55 , H01L28/60 , H01L28/75
摘要： A ferroelectric based capacitor structure and method for making the same. The capacitor includes a bottom electrode having a layer of Pt in contact with a first layer of an ohmic material. The capacitor dielectric is constructed from a layer of lead zirconium titanate doped with an element having an oxidation state greater than +4. The top electrode of the capacitor is constructed from a second layer of ohmic material in contact with a layer of Pt. The preferred ohmic material is LSCO; although RuO.sub.2 may also be utilized. The capacitor is preferably constructed over the drain of an FET such that the bottom electrode of the capacitor is connected to the drain of the FET. The resulting capacitor structure has both low imprint and low fatigue.
摘要翻译：一种铁电体电容器结构及其制造方法。电容器包括具有与第一欧姆材料层接触的Pt层的底部电极。电容器电介质由掺杂有大于+4的氧化态的元素的钛酸铅锆层构成。电容器的顶部电极由与Pt层接触的第二层欧姆材料构成。优选的欧姆材料是LSCO; 尽管也可以使用RuO 2。电容器优选地构造在FET的漏极上，使得电容器的底部电极连接到FET的漏极。所得到的电容器结构具有低压印和低疲劳。

4. 发明授权

US07924599B1 Non-volatile memory circuit using ferroelectric capacitor storage element 失效
公开(公告)号：US07924599B1
公开(公告)日：2011-04-12
申请号：US07443018
申请日：1989-11-29
申请人： Joseph T. Evans, Jr. , William D. Miller , Richard H. Womack
发明人： Joseph T. Evans, Jr. , William D. Miller , Richard H. Womack
IPC分类号： G11C7/00 , G11C11/22
CPC分类号： G11C11/22 , G11C11/5657
摘要： A non-volatile memory cell and related system utilize ferroelectric capacitors as data storage elements. Circuitry is provided for writing to a single ferroelectric capacitor storage element, as well as to dual storage elements operating inversely. The storage elements are read by use of a sense amplifier in a configuration which automatically restores the original data states, thereby eliminating the need for a subsequent restore operation. Memory systems are described which include circuitry for driving bit lines, word lines and drive lines to accomplish both the write and read operations.

5. 发明授权

US08023308B1 Non-volatile memory circuit using ferroelectric capacitor storage element 失效
标题翻译：使用铁电电容器存储元件的非易失性存储器电路
公开(公告)号：US08023308B1
公开(公告)日：2011-09-20
申请号：US07582615
申请日：1990-09-14
申请人： Joseph T. Evans, Jr. , William D. Miller , Richard H. Womack
发明人： Joseph T. Evans, Jr. , William D. Miller , Richard H. Womack
IPC分类号： G11C7/00 , G11C11/22
CPC分类号： G11C11/22 , G11C11/5657
摘要： A non-volatile memory cell and related system utilize ferroelectric capacitors as data storage elements. Circuitry is provided for writing to a single ferroelectric capacitor storage element, as well as to dual storage elements operating inversely. The storage elements are read by use of a sense amplifier in a configuration which automatically restores the original data states, thereby eliminating the need for a subsequent restore operation. Memory systems are described which include circuitry for driving bit lines, word lines and drive lines to accomplish both the write and read operations.
摘要翻译：非易失性存储单元及相关系统利用铁电电容器作为数据存储元件。提供电路用于写入单个铁电电容器存储元件以及反向运行的双重存储元件。通过使用自动恢复原始数据状态的配置的读出放大器来读取存储元件，从而不再需要后续的恢复操作。描述了包括用于驱动位线，字线和驱动线以实现写入和读取操作的电路的存储器系统。

6. 发明授权

US07672151B1 Method for reading non-volatile ferroelectric capacitor memory cell 失效
标题翻译：读取非易失性铁电电容器存储单元的方法
公开(公告)号：US07672151B1
公开(公告)日：2010-03-02
申请号：US07377168
申请日：1989-07-10
申请人： Joseph T. Evans, Jr. , William D. Miller , Richard H. Womack
发明人： Joseph T. Evans, Jr. , William D. Miller , Richard H. Womack
IPC分类号： G11C7/00 , G11C11/22
CPC分类号： G11C11/22 , G11C11/5657
摘要： A non-volatile memory cell and related system utilize ferroelectric capacitors as data storage elements. Circuitry is provided for writing to a single ferroelectric capacitor storage element, as well as to dual storage elements operating inversely. The storage elements are read by use of a sense amplifier in a configuration which automatically restores the original data states, thereby eliminating the need for a subsequent restore operation. Memory systems are described which include circuitry for driving bit lines, word lines and drive lines to accomplish both the write and read operations.
摘要翻译：非易失性存储单元及相关系统利用铁电电容器作为数据存储元件。提供电路用于写入单个铁电电容器存储元件以及反向运行的双重存储元件。通过使用自动恢复原始数据状态的配置的读出放大器来读取存储元件，从而不再需要后续的恢复操作。描述了包括用于驱动位线，字线和驱动线以实现写入和读取操作的电路的存储器系统。

7. 发明授权

US5541807A Ferroelectric based capacitor for use in memory systems and method for fabricating the same 失效
公开(公告)号：US5541807A
公开(公告)日：1996-07-30
申请号：US406376
申请日：1995-03-17
申请人： Joseph T. Evans, Jr. , Richard H. Womack
发明人： Joseph T. Evans, Jr. , Richard H. Womack
IPC分类号： H01L21/02 , H01L21/8246 , H01L27/115 , H01L29/92 , H01G4/06
CPC分类号： H01L27/11502 , H01L27/11585 , H01L27/1159 , H01L28/55 , H01L28/60 , H01L28/75
摘要： A ferroelectric based capacitor structure and method for making the same. The capacitor includes a bottom electrode having a layer of Pt in contact with a first layer of an ohmic material. The capacitor dielectric is constructed from a layer of lead zirconium titanate doped with an element having an oxidation state greater than +4. The top electrode of the capacitor is constructed from a second layer of ohmic material in contact with a layer of Pt. The preferred ohmic material is LSCO; although RuO.sub.2 may also be utilized. The capacitor is preferably constructed over the drain of an FET such that the bottom electrode of the capacitor is connected to the drain of the FET. The resulting capacitor structure has both low imprint and low fatigue.

8. 发明授权

US5434811A Non-destructive read ferroelectric based memory circuit 失效
标题翻译：无损读取基于铁电的存储电路
公开(公告)号：US5434811A
公开(公告)日：1995-07-18
申请号：US356661
申请日：1989-05-24
申请人： Joseph T. Evans, Jr. , Richard H. Womack
发明人： Joseph T. Evans, Jr. , Richard H. Womack
IPC分类号： G11C14/00 , G11C11/22
CPC分类号： G11C14/0072 , G11C14/00
摘要： A non-volatile memory circuit comprises cross-coupled transistors which drive first and second nodes to differential voltage states. First and second ferroelectric capacitors are connected respectively between the first and second nodes and a common node. The ferroelectric capacitors are set to opposite polarization states as a function of the voltage states at the first and second differential nodes. When power is lost from the circuit, the last data state in the circuit is stored in the ferroelectric capacitors. When power is restored to the memory circuit, the ferroelectric capacitors unbalance the differential nodes to such an extent to cause the circuit to become reestablished to the last data state stored in the circuit. An input signal can be received at one of the nodes through an input transistor to set the state of the memory circuit and the state of the circuit can be read from one of the nodes through an output transistor. The input and output transistors can be the same device.
摘要翻译：非易失性存储器电路包括将第一和第二节点驱动到差分电压状态的交叉耦合晶体管。第一和第二铁电电容器分别连接在第一和第二节点和公共节点之间。铁电电容器被设置为与第一和第二差分节点处的电压状态的函数相反的极化状态。当电路断电时，电路中的最后一个数据状态被存储在铁电电容器中。当电源恢复到存储器电路时，铁电电容器将差分节点的平衡不平衡到使得电路重新建立到存储在电路中的最后数据状态的程度。可以通过输入晶体管在一个节点处接收输入信号以设置存储器电路的状态，并且可以通过输出晶体管从节点之一读取电路的状态。输入和输出晶体管可以是相同的器件。

9. 发明授权

US06225654B1 Static ferrolectric memory transistor having improved data retention 失效
标题翻译：静态铁电存储晶体管具有改进的数据保留
公开(公告)号：US06225654B1
公开(公告)日：2001-05-01
申请号：US08640572
申请日：1996-05-01
申请人： Joseph T. Evans, Jr. , William L. Warren , Bruce A. Tuttle
发明人： Joseph T. Evans, Jr. , William L. Warren , Bruce A. Tuttle
IPC分类号： B05D512
CPC分类号： H01L29/516 , G11C11/223
摘要： An improved ferroelectric FET structure in which the ferroelectric layer is doped to reduce retention loss. A ferroelectric FET according to the present invention includes a semiconductor layer having first and second contacts thereon, the first and second contacts being separated from one another. The ferroelectric FET also includes a bottom electrode and a ferroelectric layer which is sandwiched between the semiconductor layer and the bottom electrode. The ferroelectric layer is constructed from a perovskite structure of the chemical composition ABO3 wherein the B site comprises first and second elements and a dopant element that has an oxidation state greater than +4 in sufficient concentration to impede shifts in the resistance measured between the first and second contacts with time. The ferroelectric FET structure preferably comprises Pb in the A-site. The first and second elements are preferably Zr and Ti, respectively. The preferred B-site dopants are Niobium, Tantalum, and Tungsten at concentrations between 1% and 8%.
摘要翻译：改进的铁电FET结构，其中掺杂铁电层以减少保留损耗。根据本发明的铁电FET包括其上具有第一和第二触点的半导体层，第一和第二触点彼此分离。铁电FET还包括夹在半导体层和底部电极之间的底部电极和铁电体层。铁电层由化学组成ABO 3的钙钛矿结构构成，其中B位置包含第一和第二元素以及具有足够浓度的大于+4的氧化态的掺杂剂元素，以阻止在第一和第二元素之间测量的电阻的偏移第二次接触时间。铁电FET结构优选在A位置包含Pb。第一和第二元素分别优选为Zr和Ti。优选的B位掺杂剂是浓度在1％和8％之间的铌，钽和钨。

10. 发明授权

US06194751B1 Ferroelectric based memory devices utilizing low Curie point ferroelectrics and encapsulation 失效
标题翻译：采用低居里点铁电体和封装的铁电存储器件
公开(公告)号：US06194751B1
公开(公告)日：2001-02-27
申请号：US09015373
申请日：1998-01-29
申请人： Joseph T. Evans, Jr.
发明人： Joseph T. Evans, Jr.
IPC分类号： H01L2976
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/75 , H01L29/516
摘要： A ferroelectric memory cell for storing information. The information is stored in the remnant polarization of a ferroelectric dielectric layer by setting the direction of the remnant polarization. The ferroelectric memory cell is designed to store the information at a temperature less than a first temperature. The memory cell includes top and bottom contacts that sandwich the dielectric layer which includes a ferroelectric material having a Curie point greater than the first temperature and less than 400° C. The dielectric layer is encapsulated in an oxygen impermeable material such that the encapsulating layer prevents oxygen from entering or leaving the dielectric layer. One of the contacts typically includes a platinum electrode. The other contact may include a similar electrode or a semiconductor layer having electrodes spaced apart thereon.
摘要翻译：用于存储信息的铁电存储单元。通过设定残留极化的方向，将信息存储在铁电介质层的剩余极化中。铁电存储器单元被设计成在小于第一温度的温度下存储信息。存储单元包括夹住电介质层的顶部和底部触点，该电介质层包括具有大于第一温度且小于400℃的居里点的铁电材料。介电层被封装在不透氧材料中，使得封装层防止氧气进入或离开电介质层。触点之一通常包括铂电极。另一个接触可以包括具有间隔开的电极的类似电极或半导体层。

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