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    • 2. 发明授权
    • Electrophotographic devices containing compensated amorphous silicon
compositions
    • 含有补偿非晶硅组合物的电子照相装置
    • US4634647A
    • 1987-01-06
    • US695990
    • 1985-01-29
    • Frank JansenJoseph MortMichael A. MorganSteven J. GrammaticaJohn C. Knights
    • Frank JansenJoseph MortMichael A. MorganSteven J. GrammaticaJohn C. Knights
    • G03G5/082G03G5/085
    • G03G5/08221G03G5/08235G03G5/08285
    • An electrophotographic photoresponsive device for use in electrophotography comprised of a supporting substrate, and an amorphous silicon composition containing from about 25 parts per million by weight to about 1 weight percent of boron compensated with from about 25 parts per million by weight to about 1 weight percent of phosphorous, nitrogen, or arsenic. Also disclosed is a photoresponsive electrophotographic device comprised of a supporting substrate, an uncompensated amorphous silicon layer and an amorphous silicon composition containing from about 100 parts per million by weight to about 1 weight percent of boron compensated with from about 25 parts per million by weight to about 1 weight percent of phosphorous, wherein the compensation increases from zero percent compensation to one percent compensation, for a distance of from about 0.1 microns to about 5 microns, which distance extends from the uncompensated amorphous silicon layer to the compensated amorphous silicon layer or wherein the photoresponsive device is comprised of a supporting substrate, an uncompensated amorphous silicon composition, a compensated amorphous silicon composition, containing from about 100 parts per million by weight to about 1 weight percent of boron compensated with from about 25 parts per million by weight to about 1 weight percent of phosphorous, wherein the compensation increases from zero percent compensation to one percent compensation, for a distance of from about 0.1 microns to about 5 microns, which distance extends from the uncompensated amorphous silicon layer to the compensated amorphous silicon layer and a top overcoating layer of silicon nitride, silicon carbide, or amorphous carbon.
    • 一种用于电子照相术的电子照相光响应装置,包括支撑衬底和非晶硅组合物,其含有约25重量%至约1重量%的硼,其以约25重量%至约1重量% 的磷,氮或砷。 还公开了一种光响应电子照相装置,其包括支撑衬底,未补偿的非晶硅层和非晶硅组合物,其含有约百万分之100重量百分比至约1重量百分比的硼,以约25重量ppm 约1重量%的磷,其中所述补偿从零补偿增加到百分之一补偿,距离为约0.1微米至约5微米,该距离从未补偿的非晶硅层延伸至补偿的非晶硅层,或其中 光响应装置由支撑衬底,未补偿的非晶硅组合物,补偿的非晶硅组合物组成,其含有约百万分之100重量百分比至约1重量百分比的硼,其以约25重量ppm至约 1重量%的磷, 将补偿从零补偿增加到1%的补偿,距离为约0.1微米至约5微米,该距离从未补偿的非晶硅层延伸到补偿的非晶硅层和氮化硅的顶部外涂层, 碳化硅或无定形碳。