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1. 发明授权

US07567467B2 Method and apparatus for data inversion in memory device 有权
标题翻译：存储器件中数据反转的方法和装置
公开(公告)号：US07567467B2
公开(公告)日：2009-07-28
申请号：US10966246
申请日：2004-10-15
申请人： Joseph Macri , Olge Drapkin , Grigori Temkine , Osamu Nagashima
发明人： Joseph Macri , Olge Drapkin , Grigori Temkine , Osamu Nagashima
IPC分类号： G11C7/06
CPC分类号： G11C7/1006 , G11C11/4096 , G11C2207/105 , G11C2207/108
摘要： The present invention is a method of writing information to a synchronous memory device by examining a present word of N bits to be written, where each bit has a high or low value. The present word is compared to a previous word also having N bits to identify the number of bit transitions from a low value to a high value of vice versa. The present bit is inverted when the number of transitions is greater than N/2. To avoid the need for having an extra bit accompany data bytes to indicate the presence or absence of inversion, the present invention takes advantage of a data mask pin that is normally unused during writing operations to carry the inversion bit. Non-inverted data is written directly into the memory device while inverted data is first inverted again before writing to storage locations, so that true data is stored in the memory device.
摘要翻译：本发明是通过检查要写入的N位的当前字，其中每个位具有高或低值来将信息写入同步存储器件的方法。将当前字与前一个字进行比较，该字还具有N位以识别从低值到高值的位转换的数量，反之亦然。当转换次数大于N / 2时，当前位被反转。为了避免需要额外的数据字节来表示反转的存在或不存在，本发明利用在写操作期间通常不使用的数据掩码引脚来承载反转位。将非反相数据直接写入存储器件，同时在写入存储位置之前首先将反相数据反相，从而将真实数据存储在存储器件中。

2. 发明授权

US06671212B2 Method and apparatus for data inversion in memory device 有权
标题翻译：存储器件中数据反转的方法和装置
公开(公告)号：US06671212B2
公开(公告)日：2003-12-30
申请号：US10163785
申请日：2002-06-05
申请人： Joseph Macri , Olge Drapkin , Grigori Temkine , Osamu Nagashima
发明人： Joseph Macri , Olge Drapkin , Grigori Temkine , Osamu Nagashima
IPC分类号： G11C1604
CPC分类号： G11C7/1006 , G11C11/4096 , G11C2207/105 , G11C2207/108
摘要： A method of writing information to a synchronous memory device by examining a present word of N bits to be written, where each bit has a high or low value. The present word is compared to a previous word also having N bits to identify the number of bit transitions from a low value to a high value or vice versa. The present bit is inverted when the number of transitions is greater than N/2. To avoid the need for having an extra bit accompany data bytes to indicate the presence or absence of inversion, the method takes advantage of a data mask pin that is normally unused during writing operations to carry the inversion bit. Non-inverted data is written directly into the memory device while inverted data is first inverted again before writing to storage locations, so that true data is stored in the memory device.
摘要翻译：通过检查要写入的N位的当前字，其中每个位具有高或低值，将信息写入同步存储器件的方法。将当前字与具有N位的前一字进行比较，以识别从低值到高值的位转换次数，反之亦然。当转换次数大于N / 2时，当前位被反转。为了避免需要额外的一点数据字节来表示存在或不存在反转，该方法利用在写操作期间通常不使用的数据掩码引脚来承载反转位。将非反相数据直接写入存储器件，同时在写入存储位置之前首先将反相数据反相，从而将真实数据存储在存储器件中。

3. 发明申请

US20090323437A1 Method and Apparatus for Data Inversion in Memory Device 有权
标题翻译：存储器件中数据反转的方法和装置
公开(公告)号：US20090323437A1
公开(公告)日：2009-12-31
申请号：US12492864
申请日：2009-06-26
申请人： Joseph Macri , Olge Drapkin , Grigori Temkine , Osamu Nagashima
发明人： Joseph Macri , Olge Drapkin , Grigori Temkine , Osamu Nagashima
IPC分类号： G11C7/06 , G11C7/10 , G11C7/00
CPC分类号： G11C7/1006 , G11C11/4096 , G11C2207/105 , G11C2207/108
摘要： The present invention is a method of writing information to a synchronous memory device by examining a present word of N bits to be written, where each bit has a high or low value. The present word is compared to a previous word also having N bits to identify the number of bit transitions from a low value to a high value of vice versa. The present bit is inverted when the number of transitions is greater than N/2. To avoid the need for having an extra bit accompany data bytes to indicate the presence or absence of inversion, the present invention takes advantage of a data mask pin that is normally unused during writing operations to carry the inversion bit. Non-inverted data is written directly into the memory device while inverted data is first inverted again before writing to storage locations, so that true data is stored in the memory device.
摘要翻译：本发明是通过检查要写入的N位的当前字，其中每个位具有高或低值来将信息写入同步存储器件的方法。将当前字与前一个字进行比较，该字还具有N位以识别从低值到高值的位转换的数量，反之亦然。当转换次数大于N / 2时，当前位被反转。为了避免需要额外的数据字节来表示反转的存在或不存在，本发明利用在写入操作期间通常不使用的数据掩码引脚来承载反转位。将非反相数据直接写入存储器件，同时在写入存储位置之前首先将反相数据反相，从而将真实数据存储在存储器件中。

4. 发明申请

US20050055491A1 Method and apparatus for data inversion in memory device 有权
标题翻译：存储器件中数据反转的方法和装置
公开(公告)号：US20050055491A1
公开(公告)日：2005-03-10
申请号：US10966246
申请日：2004-10-15
申请人： Joseph Macri , Olge Drapkin , Grigori Temkine , Osamu Nagashima
发明人： Joseph Macri , Olge Drapkin , Grigori Temkine , Osamu Nagashima
IPC分类号： G11C7/10 , G11C11/4096 , G06F12/00
CPC分类号： G11C7/1006 , G11C11/4096 , G11C2207/105 , G11C2207/108
摘要： The present invention is a method of writing information to a synchronous memory device by examining a present word of N bits to be written, where each bit has a high or low value. The present word is compared to a previous word also having N bits to identify the number of bit transitions from a low value to a high value of vice versa. The present bit is inverted when the number of transitions is greater than N/2. To avoid the need for having an extra bit accompany data bytes to indicate the presence or absence of inversion, the present invention takes advantage of a data mask pin that is normally unused during writing operations to carry the inversion bit. Non-inverted data is written directly into the memory device while inverted data is first inverted again before writing to storage locations, so that true data is stored in the memory device.
摘要翻译：本发明是通过检查要写入的N位的当前字，其中每个位具有高或低值来将信息写入同步存储器件的方法。将当前字与前一个字进行比较，该字还具有N位以识别从低值到高值的位转换的数量，反之亦然。当转换次数大于N / 2时，当前位被反转。为了避免需要额外的数据字节来表示反转的存在或不存在，本发明利用在写入操作期间通常不使用的数据掩码引脚来承载反转位。将非反相数据直接写入存储器件，同时在写入存储位置之前首先将反相数据反相，从而将真实数据存储在存储器件中。

5. 发明授权

US08031538B2 Method and apparatus for data inversion in memory device 有权
标题翻译：存储器件中数据反转的方法和装置
公开(公告)号：US08031538B2
公开(公告)日：2011-10-04
申请号：US12492864
申请日：2009-06-26
申请人： Joseph Macri , Olge Drapkin , Grigori Temkine , Osamu Nagashima
发明人： Joseph Macri , Olge Drapkin , Grigori Temkine , Osamu Nagashima
IPC分类号： G11C7/06
CPC分类号： G11C7/1006 , G11C11/4096 , G11C2207/105 , G11C2207/108
摘要： The present invention is a method of writing information to a synchronous memory device by examining a present word of N bits to be written, where each bit has a high or low value. The present word is compared to a previous word also having N bits to identify the number of bit transitions from a low value to a high value of vice versa. The present bit is inverted when the number of transitions is greater than N/2. To avoid the need for having an extra bit accompany data bytes to indicate the presence or absence of inversion, the present invention takes advantage of a data mask pin that is normally unused during writing operations to carry the inversion bit. Non-inverted data is written directly into the memory device while inverted data is first inverted again before writing to storage locations, so that true data is stored in the memory device.
摘要翻译：本发明是通过检查要写入的N位的当前字，其中每个位具有高或低值来将信息写入同步存储器件的方法。将当前字与前一个字进行比较，该字还具有N位以识别从低值到高值的位转换的数量，反之亦然。当转换次数大于N / 2时，当前位被反转。为了避免需要额外的数据字节来表示反转的存在或不存在，本发明利用在写入操作期间通常不使用的数据掩码引脚来承载反转位。将非反相数据直接写入存储器件，同时在写入存储位置之前首先将反相数据反相，从而将真实数据存储在存储器件中。

6. 发明授权

US06826095B2 Method and apparatus for data inversion in memory device 有权
标题翻译：存储器件中数据反转的方法和装置
公开(公告)号：US06826095B2
公开(公告)日：2004-11-30
申请号：US10681014
申请日：2003-10-07
申请人： Joseph Macri , Olge Drapkin , Grigori Temkine , Osamu Nagashima
发明人： Joseph Macri , Olge Drapkin , Grigori Temkine , Osamu Nagashima
IPC分类号： G11C1604
CPC分类号： G11C7/1006 , G11C11/4096 , G11C2207/105 , G11C2207/108
摘要： A method of writing information to a synchronous memory device by examining a present word of N bits to be written, where each bit has a high or low value. The present word is compared to a previous word also having N bits to identify the number of bit transitions from a low value to a high value of vice versa. The present bit is inverted when the number of bit transitions is greater than N/2. To avoid the need for having an extra bit accompany data bytes to indicate the presence or absence of inversion, the present invention takes advantage of a data mask pin that is normally unused during writing operations to carry the inversion bit. Non-inverted data is written directly into the memory device while inverted data is first inverted again before writing to storage locations, so that true data is stored in the memory device.
摘要翻译：通过检查要写入的N位的当前字，其中每个位具有高或低值，将信息写入同步存储器件的方法。将当前字与前一个字进行比较，该字还具有N位以识别从低值到高值的位转换的数量，反之亦然。当位转换的数量大于N / 2时，当前位被反转。为了避免需要额外的数据字节来表示反转的存在或不存在，本发明利用在写入操作期间通常不使用的数据掩码引脚来承载反转位。将非反相数据直接写入存储器件，同时在写入存储位置之前首先将反相数据反相，从而将真实数据存储在存储器件中。

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