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1. 发明授权

US4008139A Fluorinated compounds 失效
标题翻译：氟化合物
公开(公告)号：US4008139A
公开(公告)日：1977-02-15
申请号：US643271
申请日：1975-12-22
申请人： Joseph H. Johnson , Alvin S. Gordon , William P. Norris
发明人： Joseph H. Johnson , Alvin S. Gordon , William P. Norris
IPC分类号： C07C31/34 , B01J1/10
CPC分类号： C07C31/34
摘要： 1,1,4,4-Tetrakis(trifluoromethyl)butan-1,4-diol and 1,1-bis (trifluoromethyl)propanol-1 are prepared by reacting gaseous hexafluoroacetone and ethane in a transparent container in the presence of sunlight. The diol is a crystalline solid and the propanol-1 is a liquid. The diol is useful as a monomer in the field of polymer chemistry. That is, polymers such as polyurethans and polyesters which find many applications in the chemical industry can be made by reacting the proper material with the diol of this invention. The propanol-1 is useful as a plasticizer for polyurethans and other plastics.
摘要翻译： 1,1'-四（三氟甲基）丁-1,4-二醇和1,1-双（三氟甲基）丙醇1是通过在阳光下存在于透明容器中的气态六氟丙酮和乙烷反应来制备的。二醇是结晶固体，丙醇-1是液体。二醇可用作聚合物化学领域的单体。也就是说，可以通过使适当的材料与本发明的二醇反应来制备在化学工业中发现许多应用的聚氨酯和聚酯的聚合物。丙醇-1可用作聚氨酯和其它塑料的增塑剂。

2. 发明授权

US06521923B1 Microwave field effect transistor structure on silicon carbide substrate 有权
标题翻译：微波场效应晶体管结构在碳化硅衬底上
公开(公告)号：US06521923B1
公开(公告)日：2003-02-18
申请号：US10156221
申请日：2002-05-25
申请人： Pablo D'Anna , Joseph H. Johnson
发明人： Pablo D'Anna , Joseph H. Johnson
IPC分类号： H01L31119
CPC分类号： H01L29/41766 , H01L21/743 , H01L23/552 , H01L29/0847 , H01L29/1608 , H01L29/402 , H01L29/4175 , H01L29/7835 , H01L2924/0002 , H01L2924/00
摘要： A microwave transistor structure comprising: (a) a SiC substrate having a top surface; (b) a silicon semiconductor material of a first conductivity type overlaying the top surface of the semiconductor substrate and having a top surface; (c) a conductive gate overlying and insulated from the top surface of the silicon semiconductor material; (d) a channel region of the first conductivity type formed completely within the silicon semiconductor material including a channel dopant concentration; (e) a drain region of the second conductivity type formed in the silicon semiconductor material and contacting the channel region; (f) a body region of the first conductivity type and having a body region dopant concentration formed in the silicon semiconductor material under the conductive gate region; (g) a source region of the second conductivity type and having a source region dopant concentration formed in the silicon semiconductor material within the body region; (h) a shield plate region being adjacent and being parallel to the drain region formed on the top surface of the silicon semiconductor material over a portion of the channel region; wherein the shield plate region is adjacent and parallel to the conductive gate region; and wherein the shield plate extends above the top surface of the silicon semiconductor material to a shield plate height level, and is insulated from the top-surface of the silicon semiconductor material; and (i) a conductive plug region formed in the body region of the silicon semiconductor material to connect a lateral surface of the body region to the top surface of the substrate.
摘要翻译：一种微波晶体管结构，包括：（a）具有顶表面的SiC衬底; （b）覆盖半导体衬底的顶表面并具有顶表面的第一导电类型的硅半导体材料; （c）覆盖并与硅半导体材料的顶表面绝缘的导电栅极; （d）在包含沟道掺杂剂浓度的硅半导体材料内完全形成第一导电类型的沟道区; （e）形成在硅半导体材料中并与沟道区接触的第二导电类型的漏极区; （f）第一导电类型的体区，并且在导电栅区下形成在硅半导体材料中的体区掺杂浓度; （g）第二导电类型的源区，并且具有在体区内的硅半导体材料中形成的源区掺杂浓度; （h）屏蔽板区域，其与所述沟道区域的一部分上形成在所述硅半导体材料的顶表面上的所述漏极区域相邻并平行; 其中所述屏蔽板区域与所述导电栅极区域相邻并平行; 并且其中所述屏蔽板在所述硅半导体材料的顶表面上方延伸到屏蔽板高度水平面，并且与所述硅半导体材料的顶表面绝缘; 以及（i）形成在硅半导体材料的主体区域中的导电插塞区域，以将本体区域的侧表面连接到衬底的顶表面。

3. 发明授权

US4067322A Disposable, pre-gel body electrodes 失效
标题翻译：一次性，预凝胶体电极
公开(公告)号：US4067322A
公开(公告)日：1978-01-10
申请号：US653227
申请日：1976-01-28
申请人： Joseph H. Johnson
发明人： Joseph H. Johnson
IPC分类号： A61B5/0408 , A61B5/04
CPC分类号： A61B5/0408
摘要： A disposable, pre-gel body electrode for short term use has a self-contained electrolyte gel-impregnated pad therein sealed with a cap which minimizes electrolyte dry-out.
摘要翻译：用于短期使用的一次性预凝胶体电极具有独立的电解质凝胶浸渍垫，其中密封有帽，其使电解质干燥最小化。

4. 发明授权

US5312353A Modular poultry automatic vaccine injection and spray apparatus 失效
标题翻译：模块化家禽自动疫苗注射和喷雾装置
公开(公告)号：US5312353A
公开(公告)日：1994-05-17
申请号：US36462
申请日：1993-03-24
申请人： Gregory D. Boggess , Joseph H. Johnson , Richard M. Kight , John D. Mason , Roger D. Luke
发明人： Gregory D. Boggess , Joseph H. Johnson , Richard M. Kight , John D. Mason , Roger D. Luke
IPC分类号： A61D1/02 , A61M5/20 , A61D7/00
CPC分类号： A61D1/025
摘要： A modular poultry automatic injection and spraying apparatus (10) featuring a dual-sensor switch means (41) and a dual-action, fluid-actuated drive means (101) is disclosed. The apparatus has a casing construction (11) including an upper housing (12) mounted on a lower housing (13) such that the lower housing (13), which contains water-sensitive pneumatic logic circuitry (261), can be easily removed prior to cleaning. The casing construction (11) has the additional advantage of allowing substitute upper and lower housings (12, 13) to be interchanged during maintenance and repair. The dual sensor switch means (41) ensures that the injections are performed accurately and consistently. The dual-action, fluid-actuated drive means (101) allows for the simultaneous injection and spraying functions of the apparatus (10) obviating the need for an additional apparatus or separate compressed air signal. The apparatus (10) also features a compressed air flushing system which prevents the switch means (41) from clogging, and periodically flushes contaminants from the lower housing (13), using exhaust from an alarm means (71), which notifies an operator of a complete run. Additionally, a separation means (21) prevents chicks,y missed by the apparatus (10) due to operator error, from mixing with chicks already inoculated by the apparatus (10).
摘要翻译：公开了一种具有双传感器开关装置（41）和双作用流体致动驱动装置（101）的模块化家禽自动喷射和喷涂装置（10）。该装置具有壳体结构（11），其包括安装在下壳体（13）上的上壳体（12），使得包含水敏气动逻辑电路（261）的下壳体（13）可以容易地先除去清洗。壳体结构（11）具有允许在维护和修理期间更换替换的上壳体和下壳体（12,13）的附加优点。双传感器开关装置（41）确保注射被精确且一致地执行。双作用流体致动驱动装置（101）允许装置（10）的同时喷射和喷射功能，从而避免需要附加装置或单独的压缩空气信号。该设备（10）还具有压缩空气冲洗系统，其防止开关装置（41）堵塞，并且使用来自报警装置（71）的排气周期性地从下壳体（13）冲洗污染物，该报警装置（71）通知操作者一个完整的运行。此外，分离装置（21）防止由于操作者错误而被设备（10）错过的与由已经由设备（10）接种的小鸡混合的小鸡。

5. 发明授权

US4242598A Temperature compensating transistor bias device 失效
标题翻译：温度补偿晶体管偏置器件
公开(公告)号：US4242598A
公开(公告)日：1980-12-30
申请号：US511882
申请日：1974-10-02
申请人： Joseph H. Johnson , Lee B. Max
发明人： Joseph H. Johnson , Lee B. Max
IPC分类号： H03F1/30 , H03F3/04
CPC分类号： H03F1/302 , H01L2224/48091 , H01L2924/3011
摘要： The base-to-emitter bias voltage and current of a high frequency transistor, operating class AB or class A, is derived from a semiconductive bias device consisting of a semiconductive diode junction fed with current from a constant current source to derive a V.sub.BE voltage thereacross which is the bias source voltage. This source voltage is applied across the base-to-emitter junction of the RF transistor via the intermediary of a positive temperature coefficient silicon resistor. The diode and silicon resistor are packaged together for mounting on a heat sink common to the transistor, whereby the transistor is compensated for temperature dependent changes in V.sub.BE and h.sub.FE.
摘要翻译：来自由半导体偏置装置组成的半导体偏置装置的高频晶体管的基极 - 发射极偏置电压和电流由一个半导体二极管结组成，该半导体二极管结馈入来自恒流源的电流，从而导出其中的VBE电压这是偏压源电压。该源极电压通过正温度系数硅电阻的中间施加在RF晶体管的基极到发射极结两端。二极管和硅电阻器封装在一起，用于安装在晶体管公共的散热片上，由此补偿晶体管与VBE和hFE中的温度相关的变化。

6. 发明授权

US4626383A Chemiluminescent system catalysts 失效
标题翻译：化学发光体系催化剂
公开(公告)号：US4626383A
公开(公告)日：1986-12-02
申请号：US719786
申请日：1985-04-03
申请人： Herbert P. Richter , Joseph H. Johnson
发明人： Herbert P. Richter , Joseph H. Johnson
IPC分类号： C09K11/07 , C09K11/00
CPC分类号： C09K11/07
摘要： Catalysts for low temperature hydrogen peroxide/oxalate ester fluorescer miluminescent systems are disclosed. Lithium carboxylic said salt catalysts which lower the activation energy of the reaction and also reduce the temperature dependence of the light emission process are preferred.
摘要翻译：公开了用于低温过氧化氢/草酸酯荧光剂化学发光体系的催化剂。优选降低反应的活化能并降低发光过程的温度依赖性的羧酸羧酸盐催化剂。

7. 发明授权

US3958195A R.F. transistor package having an isolated common lead 失效
标题翻译： R.F. 具有隔离通用引线的晶体管封装
公开(公告)号：US3958195A
公开(公告)日：1976-05-18
申请号：US560674
申请日：1975-03-21
申请人： Joseph H. Johnson
发明人： Joseph H. Johnson
IPC分类号： H01L23/057 , H01L23/66 , H01L23/12 , H01P1/00
CPC分类号： H01L23/057 , H01L23/66 , H01L24/49 , H01L2223/6644 , H01L2224/48091 , H01L2224/48247 , H01L2224/49109 , H01L2224/49111 , H01L2224/49175 , H01L24/48 , H01L2924/00014 , H01L2924/01029 , H01L2924/01082 , H01L2924/15153 , H01L2924/1517 , H01L2924/15787 , H01L2924/16152 , H01L2924/30105 , H01L2924/30107
摘要： In a radio frequency transistor package, a layer of metallization is deposited on an electrically insulative thermally conductive ceramic substrate member serving as a heat sink. An insular region of the metallization serves as a pad for receiving a transistor die with the collector region of the transistor bonded to the insular region of metallization. The region of the metallization surrounding the pad comprises a ground plane. An apertured ceramic insulative spacer is bonded over the ground plane metallization with the aperture in registration over the transistor. Input, output and a pair of common lead metal strips are bonded to the upper surface of the spacer in generally coplanar configuration. The two common leads extend across the spacer adjacent opposite sides of the aperture in generally tangential relation thereto. The input and output leads are disposed in between the common leads and are interrupted by the central aperture in the spacer. The common leads are electrically interconnected to the ground plane metallization layer via conductive means extending through the aperture in the spacer. The input lead is connected to one of the base or emitter regions of the transistor die via wire bonding leads extending through the aperture in the spacer. The other base or emitter region of the transistor die is connected via parallel wire bonding leads to the surrounding ground plane metallization. The output lead is connected via a set of parallel wire bond leads through the central aperture to the transistor pad.

8. 发明授权

US08080826B1 High performance active and passive structures based on silicon material bonded to silicon carbide 有权
标题翻译：基于与碳化硅结合的硅材料的高性能主动和被动结构
公开(公告)号：US08080826B1
公开(公告)日：2011-12-20
申请号：US10656613
申请日：2003-09-04
申请人： Joseph H. Johnson , Pablo D'Anna
发明人： Joseph H. Johnson , Pablo D'Anna
IPC分类号： H01L31/0256
CPC分类号： H01L21/2007 , H01L21/8213 , H01L27/0635
摘要： The present invention discloses and claims the Silicon Carbide based Silicon structure comprising: (1) a Silicon Carbide substrate, (2) a Silicon semiconductor material having a top surface, and either bonded to the Silicon Carbide substrate via the bonding layer, or epitaxially grown on the Silicon Carbide substrate; and (3) at least one separation plug formed in the Silicon semiconductor material. The single bonding layer, or either layer of the double bonding layer, is selected from the group consisting of: {a Silicon dioxide layer; a Silicon layer; a carbon layer; a Silicon germanium (SiGe) layer; a tungsten silicide layer; a titanium suicide layer; and a cobalt silicide layer}. The separation plug extends from the top surface of the Silicon semiconductor material into the Silicon Carbide substrate at a separation plug depth level, and is configured to block the coupling between at least two adjacent active/passive structures formed in the Silicon semiconductor material.
摘要翻译：本发明公开并要求所述的基于碳化硅的硅结构，其包括：（1）碳化硅基板，（2）具有顶表面的硅半导体材料，以及经由所述接合层与所述碳化硅基板结合或外延生长在碳化硅基板上; 和（3）形成在硅半导体材料中的至少一个分离塞。单键合层或双键合层的任一层选自：{二氧化硅层; 硅层; 碳层; 硅锗（SiGe）层; 硅化钨层; 钛硅化物层; 和硅化钴层}。分离塞以分离塞深度水平从硅半导体材料的顶表面延伸到碳化硅衬底中，并且被配置为阻挡形成在硅半导体材料中的至少两个相邻的主动/被动结构之间的耦合。

9. 发明授权

US06838731B1 Microwave transistor structure having step drain region 有权
标题翻译：具有阶跃漏极区域的微波晶体管结构
公开(公告)号：US06838731B1
公开(公告)日：2005-01-04
申请号：US10410908
申请日：2003-04-09
申请人： Pablo D'Anna , Joseph H. Johnson
发明人： Pablo D'Anna , Joseph H. Johnson
IPC分类号： H01L29/06 , H01L29/08 , H01L29/417 , H01L29/76 , H01L29/78
CPC分类号： H01L29/41766 , H01L29/0657 , H01L29/0847 , H01L29/402 , H01L29/4175 , H01L29/7835
摘要： A microwave transistor structure having a step drain region comprising: (A) a substrate having a top surface; (B) a silicon semiconductor material of a first conductivity type, having a first dopant concentration and a top surface; (C) a conductive gate overlying and insulated from the top surface of the silicon semiconductor material; (D) at least one horizontal drain extension region of a second conductivity type and having a horizontal drain extension dopant concentration; (E) a step drain region formed in the silicon semiconductor material, and contacting the horizontal drain extension region; (F) a body region of the first conductivity type and having a body region dopant concentration; (G) a source region of the second conductivity type and having a source region dopant concentration; (H) a shield plate region formed on the top surface of the silicon semiconductor material over a portion of the horizontal drain extension region, the shield plate being adjacent and parallel to the horizontal drain extension region; the shield plate being adjacent and parallel to the conductive gate region; and (I) a conductive plug region.
摘要翻译：一种具有阶跃漏极区域的微波晶体管结构，包括：（A）具有顶表面的衬底; （B）具有第一掺杂剂浓度和顶表面的第一导电类型的硅半导体材料; （C）覆盖并与硅半导体材料的顶表面绝缘的导电栅极; （D）至少一个第二导电类型的水平漏极延伸区域并具有水平漏极延伸掺杂剂浓度; （E）形成在所述硅半导体材料中并与所述水平漏极延伸区域接触的阶跃漏极区域; （F）具有第一导电类型并具有体区掺杂浓度的体区; （G）第二导电类型的源极区域，并具有源极区掺杂剂浓度; （H）在所述水平漏极延伸区域的一部分上形成在所述硅半导体材料的顶表面上的屏蔽板区域，所述屏蔽板与所述水平漏极延伸区域相邻并平行; 所述屏蔽板与所述导电栅极区域相邻并平行; 和（I）导电塞区域。

10. 发明授权

US06831332B2 Microwave field effect transistor structure 有权
标题翻译：微波场效应晶体管结构
公开(公告)号：US06831332B2
公开(公告)日：2004-12-14
申请号：US10156605
申请日：2002-05-25
申请人： Pablo D'Anna , Joseph H. Johnson
发明人： Pablo D'Anna , Joseph H. Johnson
IPC分类号： H01L2976
CPC分类号： H01L29/7835 , H01L29/0847 , H01L29/402 , H01L29/41766 , H01L2924/0002 , H01L2924/00
摘要： A microwave transistor structure comprising: (1) a substrate having a top surface; (2) a silicon semiconductor material of a first conductivity type; (3) a conductive gate; (4) a channel region of a second conductivity type; (5) a drain region of the second conductivity type; (6) a body of the first conductivity type; (7) a source region of the second conductivity type; (8) a shield plate region formed on the top surface of the silicon semiconductor material over a portion of the channel region, wherein the shield plate is adjacent and parallel to the drain region, and to the conductive gate region; and (9) a conductive plug region formed in the body region of the silicon semiconductor material, wherein the conductive plug region connects a lateral surface of the body region to the top surface of the substrate.
摘要翻译：一种微波晶体管结构，包括：（1）具有顶表面的衬底; （2）第一导电类型的硅半导体材料; （3）导电栅极; （4）第二导电类型的沟道区; （5）第二导电类型的漏区; （6）第一导电类型的主体; （7）第二导电类型的源极区; （8）在所述沟道区域的一部分上形成在所述硅半导体材料的上表面上的屏蔽板区域，其中所述屏蔽板与所述漏极区域相邻并且平行于所述导电栅极区域; 以及（9）形成在硅半导体材料的主体区域中的导电插塞区域，其中导电插塞区域将本体区域的侧表面连接到衬底的顶表面。

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