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1. 发明授权

US4602190A Semiconductor multipactor device 失效
标题翻译：半导体多元器件
公开(公告)号：US4602190A
公开(公告)日：1986-07-22
申请号：US612524
申请日：1984-05-21
申请人： Joseph D. Evankow, Jr.
发明人： Joseph D. Evankow, Jr.
IPC分类号： H01J25/76 , H01J7/46
CPC分类号： H01J25/76
摘要： The placement of one or a pair of suitably biased thin semiconductor epital layers on the secondary emission surface of a multipactor device provides an improvement of devices which operate in accordance with the principle of multipactoring. A multipactor device is disclosed having a multipactor region comprised of at least one surface formed of one or more thin epitaxial semiconductor layers, the outer layer being of n-type semiconductor material consisting of, for example, gallium phosphide covered with cesium which provides an abundance of free electrons at the surface when biased in the forward direction. In one disclosed configuration the multipactor region is located in a section of waveguide while in another arrangement the region is located on the top of a post in a multipactor input cavity.
摘要翻译：在多反应器装置的二次发射表面上放置一个或一对适当偏置的薄半导体外延层提供了根据多次反馈原理操作的装置的改进。公开了具有由至少一个由一个或多个薄外延半导体层形成的表面的多层反应器区域的多层反应器区域，该外层是由例如提供丰度的铯覆盖的磷化镓构成的n型半导体材料的自由电子在正向方向偏置时的表面。在一个所公开的配置中，多个反应器区域位于波导的一部分中，而在另一布置中，该区域位于多反应器输入腔中的柱的顶部。

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