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    • 2. 发明授权
    • Josephson junction device comprising high critical temperature
crystalline copper superconductive layers
    • 约瑟夫逊结器件包括高临界温度的结晶铜超导层
    • US5552373A
    • 1996-09-03
    • US867063
    • 1992-04-10
    • John A. AgostinelliJose M. MirGerrit LubbertsSamuel Chen
    • John A. AgostinelliJose M. MirGerrit LubbertsSamuel Chen
    • H01L39/22H01L39/24H01L29/06
    • H01L39/2496H01L39/225
    • A Josephson junction device is disclosed having a substrate upon which are located overlying and underlying high critical temperature crystalline oxide superconductive layers separated by an interposed impedance controlling layer. The underlying superconductive layer is limited to a selected area of the substrate while the overlying and interposed layers overlie only a portion of the underlying superconductive layer. Nonsuperconducting oxide layer portions laterally abut the superconductive and interposed layers. A first electrical conductor is attached to the underlying superconductive layer at a location free of overlying oxide layers, and a second electrical conductor contacts the overlying superconductive layer and extends laterally over the adjacent laterally abutting nonsuperconductive layer portion. A process is disclosed for preparing the Josephson junction device in which a Josephson junction layer sequence is deposited on a substrate, a portion of the Josephson junction layer sequence laterally abutting a selected area is converted to a nonsuperconducting form, within the selected area overlying layers are removed from the superconducting layer nearer the substrate, and an electrical conductor extends laterally from the superconducting layer farther removed from the substrate to the laterally abutting nonsuperconducting layer.
    • 公开了一种约瑟夫逊结器件,其具有衬底,位于其上并且位于由插入的阻抗控制层分开的高临界温度结晶氧化物超导层之下。 底层的超导层限于衬底的选定区域,而覆盖和插入的层仅覆盖下面的超导层的一部分。 非导电氧化物层部分横向邻接超导和插入的层。 第一电导体在没有覆盖氧化物层的位置处附接到下面的超导层,并且第二电导体接触上覆的超导层并横向延伸在相邻的横向邻接的非超导电导层部分上。 公开了一种制备约瑟夫逊结结器件的方法,其中约瑟夫逊结层序列沉积在衬底上,约束结层序列横向邻接所选区域的部分被转换为非超导形式,在覆盖层的选定区域内 从超导层离开更靠近衬底的电导体,并且电导体从更远离衬底的超导层横向延伸到横向邻接的非超导层。
    • 6. 发明授权
    • Electrooptic device for scanning and information modulating a plurality
of light beams
    • 用于扫描和信息调制多个光束的电光装置
    • US4614408A
    • 1986-09-30
    • US644301
    • 1984-08-27
    • Jose M. MirJohn A. Agostinelli
    • Jose M. MirJohn A. Agostinelli
    • G02F1/03G02F1/055G02F1/29G06K15/12H04N1/036H04N1/113H04N1/192
    • H04N1/036G02F1/0551G02F1/0556G02F1/292G06K15/1257H04N1/192
    • An electrooptic device for scanning and information modulating a plurality of light beams across an image zone is disclosed. The device includes a substrate formed of electrooptic material that changes its birefringence in response to an electric field established therein. A time-varying electric field is established in a portion of the substrate which varies the substrate refractive index so as to deflect an incident linear light beam. The device includes a lens arrangement which forms the deflected light beam into a plurality of beams focused at the image zone, and a light valve array which has a pixel portion for each focused light beam. Voltage signals applied to selected ones of a plurality of modulating electrodes of the light valve array cause selected ones of the array pixel portions to change their birefringence and change the polarization vector of their focused light beams as the beams are scanned across the image zone.
    • 公开了一种用于扫描和信息调制跨越图像区域的多个光束的电光装置。 该装置包括由电光材料形成的基板,其响应于其中建立的电场而改变其双折射。 在衬底的一部分中建立时变电场,其改变衬底折射率以使入射的线性光束偏转。 该装置包括将偏转光束形成为聚焦在图像区域的多个光束的透镜装置,以及具有用于每个聚焦光束的像素部分的光阀阵列。 施加到光阀阵列的多个调制电极中的选定的电压信号的电压信号使得所选择的阵列像素部分中的一个改变其双折射并且在横跨图像区域扫描光束时改变其聚焦光束的偏振矢量。