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    • 3. 发明授权
    • Method for crystallizing amorphous silicon thin-film for use in thin-film transistors and thermal annealing apparatus therefor
    • 用于薄膜晶体管中使用的非晶硅薄膜的结晶方法及其热退火装置
    • US06689647B2
    • 2004-02-10
    • US09758274
    • 2001-01-12
    • Seungki JooTaekyung Kim
    • Seungki JooTaekyung Kim
    • H01L2120
    • H01L21/02672H01L21/02532H01L21/02691H01L21/2026H01L22/26H01L29/66757Y10T428/12819Y10T428/24479Y10T428/24512Y10T428/24562
    • A method for crystallizing an amorphous silicon thin-film is provided, in which amorphous silicon thin-films on a large-area glass substrate for use in a TFT-LCD (TFT-Liquid Crystal Display) are crystallized uniformly and quickly by a scanning method using a linear lamp to prevent deforming of the glass substrate. The crystallization method includes the steps of forming an amorphous silicon thin-film on a glass substrate, and illuminating a linear light beam on the amorphous silicon thin-film from the upper portion of the glass substrate according to a scanning method. The crystallization method is applied to a polycrystalline silicon thin-film transistor manufacturing method including the steps of forming an amorphous silicon thin-film on a glass substrate, and crystallizing the amorphous silicon of the thin-film transistor according to a scanning method using a linear light beam. In the scanning illumination of the linear light beam, either one of a supporting member of the glass substrate and a light source is relatively moved by a scanning driver apparatus.
    • 提供一种使非晶硅薄膜结晶的方法,其中用于TFT-LCD(TFT-液晶显示器)的大面积玻璃基板上的非晶硅薄膜通过扫描方法均匀且快速地结晶 使用线性灯来防止玻璃基板的变形。 结晶方法包括以下步骤:在玻璃基板上形成非晶硅薄膜,并根据扫描方法从玻璃基板的上部照射非晶硅薄膜上的线性光束。 将结晶化方法应用于多晶硅薄膜晶体管制造方法,该方法包括以下步骤:在玻璃基板上形成非晶硅薄膜,并根据使用线性的薄膜晶体管的扫描方法使薄膜晶体管的非晶硅结晶 光束。 在线状光束的扫描照明中,玻璃基板的支撑部件和光源中的任一个被扫描驱动装置相对移动。